WO2009013826A1 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- WO2009013826A1 WO2009013826A1 PCT/JP2007/064601 JP2007064601W WO2009013826A1 WO 2009013826 A1 WO2009013826 A1 WO 2009013826A1 JP 2007064601 W JP2007064601 W JP 2007064601W WO 2009013826 A1 WO2009013826 A1 WO 2009013826A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor device
- electrode pads
- insulating layer
- conductive layers
- extend
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title abstract 3
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Abstract
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200780100002.6A CN101755334B (zh) | 2007-07-25 | 2007-07-25 | 半导体器件 |
PCT/JP2007/064601 WO2009013826A1 (ja) | 2007-07-25 | 2007-07-25 | 半導体装置 |
KR1020107001067A KR101095409B1 (ko) | 2007-07-25 | 2007-07-25 | 반도체 장치 |
JP2009524353A JP5387407B2 (ja) | 2007-07-25 | 2007-07-25 | 半導体装置 |
US12/690,469 US20100155941A1 (en) | 2007-07-25 | 2010-01-20 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2007/064601 WO2009013826A1 (ja) | 2007-07-25 | 2007-07-25 | 半導体装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/690,469 Continuation US20100155941A1 (en) | 2007-07-25 | 2010-01-20 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009013826A1 true WO2009013826A1 (ja) | 2009-01-29 |
Family
ID=40281089
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2007/064601 WO2009013826A1 (ja) | 2007-07-25 | 2007-07-25 | 半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20100155941A1 (ja) |
JP (1) | JP5387407B2 (ja) |
KR (1) | KR101095409B1 (ja) |
CN (1) | CN101755334B (ja) |
WO (1) | WO2009013826A1 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010100700A1 (ja) * | 2009-03-04 | 2010-09-10 | パナソニック株式会社 | 半導体装置、及び該半導体装置を備えた実装体 |
EP2276063A3 (en) * | 2009-07-13 | 2011-04-20 | LSI Corporation | Improvement of solder interconnect by addition of copper |
CN102034779A (zh) * | 2009-10-08 | 2011-04-27 | 台湾积体电路制造股份有限公司 | 具有坚固的拐角凸块的芯片设计 |
JP2011096918A (ja) * | 2009-10-30 | 2011-05-12 | Oki Semiconductor Co Ltd | 半導体装置および半導体装置の製造方法 |
EP2302672A3 (en) * | 2009-09-25 | 2011-06-29 | Kabushiki Kaisha Toshiba | Semiconductor device with electrode pad and method for manufacturing same |
US11329019B2 (en) | 2019-11-27 | 2022-05-10 | Socionext Inc. | Semiconductor device |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4538764B2 (ja) * | 2008-07-24 | 2010-09-08 | カシオ計算機株式会社 | 半導体装置およびその製造方法 |
US9070851B2 (en) | 2010-09-24 | 2015-06-30 | Seoul Semiconductor Co., Ltd. | Wafer-level light emitting diode package and method of fabricating the same |
US9449933B2 (en) * | 2012-03-29 | 2016-09-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Packaging device and method of making the same |
JP5475077B2 (ja) * | 2012-09-07 | 2014-04-16 | 日本特殊陶業株式会社 | 配線基板およびその製造方法 |
US9418877B2 (en) | 2014-05-05 | 2016-08-16 | Qualcomm Incorporated | Integrated device comprising high density interconnects in inorganic layers and redistribution layers in organic layers |
CN205944139U (zh) | 2016-03-30 | 2017-02-08 | 首尔伟傲世有限公司 | 紫外线发光二极管封装件以及包含此的发光二极管模块 |
US11495561B2 (en) * | 2020-05-11 | 2022-11-08 | X Display Company Technology Limited | Multilayer electrical conductors for transfer printing |
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US6617696B1 (en) * | 2002-03-14 | 2003-09-09 | Fairchild Semiconductor Corporation | Supporting control gate connection on a package using additional bumps |
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US7468545B2 (en) * | 2005-05-06 | 2008-12-23 | Megica Corporation | Post passivation structure for a semiconductor device and packaging process for same |
JP4441658B1 (ja) * | 2008-12-19 | 2010-03-31 | 国立大学法人東北大学 | 銅配線形成方法、銅配線および半導体装置 |
-
2007
- 2007-07-25 KR KR1020107001067A patent/KR101095409B1/ko active IP Right Grant
- 2007-07-25 CN CN200780100002.6A patent/CN101755334B/zh not_active Expired - Fee Related
- 2007-07-25 WO PCT/JP2007/064601 patent/WO2009013826A1/ja active Application Filing
- 2007-07-25 JP JP2009524353A patent/JP5387407B2/ja not_active Expired - Fee Related
-
2010
- 2010-01-20 US US12/690,469 patent/US20100155941A1/en not_active Abandoned
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JPH08222571A (ja) * | 1995-02-13 | 1996-08-30 | Sony Corp | フリップチップicとその製造方法 |
JP2002280476A (ja) * | 2001-03-16 | 2002-09-27 | Fujikura Ltd | 半導体パッケージおよび半導体パッケージの製造方法 |
JP2005039260A (ja) * | 2003-07-01 | 2005-02-10 | Nec Corp | 応力緩和構造とその形成方法、応力緩和シートとその製造方法、及び半導体装置並びに電子機器 |
JP2007005364A (ja) * | 2005-06-21 | 2007-01-11 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法及び半導体装置 |
JP2007013063A (ja) * | 2005-07-04 | 2007-01-18 | Fujitsu Ltd | 半導体装置 |
JP2007053346A (ja) * | 2005-08-19 | 2007-03-01 | Samsung Electronics Co Ltd | 半導体パッケージの配線構造物及びその製造方法、これを利用したウエハーレベルパッケージ及びその製造方法 |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2010100700A1 (ja) * | 2009-03-04 | 2010-09-10 | パナソニック株式会社 | 半導体装置、及び該半導体装置を備えた実装体 |
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EP2276063A3 (en) * | 2009-07-13 | 2011-04-20 | LSI Corporation | Improvement of solder interconnect by addition of copper |
US8378485B2 (en) | 2009-07-13 | 2013-02-19 | Lsi Corporation | Solder interconnect by addition of copper |
US8580621B2 (en) | 2009-07-13 | 2013-11-12 | Lsi Corporation | Solder interconnect by addition of copper |
EP2302672A3 (en) * | 2009-09-25 | 2011-06-29 | Kabushiki Kaisha Toshiba | Semiconductor device with electrode pad and method for manufacturing same |
US8319246B2 (en) | 2009-09-25 | 2012-11-27 | Kabushiki Kaisha Toshiba | Semiconductor device and method for manufacturing same |
CN102034779A (zh) * | 2009-10-08 | 2011-04-27 | 台湾积体电路制造股份有限公司 | 具有坚固的拐角凸块的芯片设计 |
JP2011096918A (ja) * | 2009-10-30 | 2011-05-12 | Oki Semiconductor Co Ltd | 半導体装置および半導体装置の製造方法 |
US11329019B2 (en) | 2019-11-27 | 2022-05-10 | Socionext Inc. | Semiconductor device |
US11694985B2 (en) | 2019-11-27 | 2023-07-04 | Socionext Inc. | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
US20100155941A1 (en) | 2010-06-24 |
CN101755334B (zh) | 2011-08-31 |
CN101755334A (zh) | 2010-06-23 |
JP5387407B2 (ja) | 2014-01-15 |
JPWO2009013826A1 (ja) | 2010-09-30 |
KR20100029247A (ko) | 2010-03-16 |
KR101095409B1 (ko) | 2011-12-19 |
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