WO2009013826A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
WO2009013826A1
WO2009013826A1 PCT/JP2007/064601 JP2007064601W WO2009013826A1 WO 2009013826 A1 WO2009013826 A1 WO 2009013826A1 JP 2007064601 W JP2007064601 W JP 2007064601W WO 2009013826 A1 WO2009013826 A1 WO 2009013826A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor device
electrode pads
insulating layer
conductive layers
extend
Prior art date
Application number
PCT/JP2007/064601
Other languages
English (en)
French (fr)
Inventor
Hirohisa Matsuki
Kazuyuki Imamura
Original Assignee
Fujitsu Microelectronics Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Microelectronics Limited filed Critical Fujitsu Microelectronics Limited
Priority to CN200780100002.6A priority Critical patent/CN101755334B/zh
Priority to PCT/JP2007/064601 priority patent/WO2009013826A1/ja
Priority to KR1020107001067A priority patent/KR101095409B1/ko
Priority to JP2009524353A priority patent/JP5387407B2/ja
Publication of WO2009013826A1 publication Critical patent/WO2009013826A1/ja
Priority to US12/690,469 priority patent/US20100155941A1/en

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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/30105Capacitance

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Abstract

半導体素子(100)における絶縁層上に配設された複数の電極パッド(47)と、一端が前記電極パッド(47)の表出部に接続され、前記電極パッド(47)毎に前記絶縁層上に延在して配設された複数の導電層(51)と、前記導電層(51)の他端に配設された突起電極(52)と、を備え、前記導電層(51)の延在する方向は、前記電極パッド(47)に対して一定の方向に延在していることを特徴とする半導体装置。
PCT/JP2007/064601 2007-07-25 2007-07-25 半導体装置 WO2009013826A1 (ja)

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CN200780100002.6A CN101755334B (zh) 2007-07-25 2007-07-25 半导体器件
PCT/JP2007/064601 WO2009013826A1 (ja) 2007-07-25 2007-07-25 半導体装置
KR1020107001067A KR101095409B1 (ko) 2007-07-25 2007-07-25 반도체 장치
JP2009524353A JP5387407B2 (ja) 2007-07-25 2007-07-25 半導体装置
US12/690,469 US20100155941A1 (en) 2007-07-25 2010-01-20 Semiconductor device

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CN101755334B (zh) 2011-08-31
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JP5387407B2 (ja) 2014-01-15
JPWO2009013826A1 (ja) 2010-09-30
KR20100029247A (ko) 2010-03-16
KR101095409B1 (ko) 2011-12-19

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