NO20075137L - Mikromekanisk komponent og fremgangsmate for fremstilling av samme - Google Patents

Mikromekanisk komponent og fremgangsmate for fremstilling av samme

Info

Publication number
NO20075137L
NO20075137L NO20075137A NO20075137A NO20075137L NO 20075137 L NO20075137 L NO 20075137L NO 20075137 A NO20075137 A NO 20075137A NO 20075137 A NO20075137 A NO 20075137A NO 20075137 L NO20075137 L NO 20075137L
Authority
NO
Norway
Prior art keywords
layer
composite
substrate
structural
structural layer
Prior art date
Application number
NO20075137A
Other languages
English (en)
Other versions
NO340787B1 (no
Inventor
Uwe Breng
Wolfram Geiger
Original Assignee
Litef Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Litef Gmbh filed Critical Litef Gmbh
Publication of NO20075137L publication Critical patent/NO20075137L/no
Publication of NO340787B1 publication Critical patent/NO340787B1/no

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00—Subject matter not provided for in other groups of this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00333—Aspects relating to packaging of MEMS devices, not covered by groups B81C1/00269 - B81C1/00325
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Micromachines (AREA)
  • Immobilizing And Processing Of Enzymes And Microorganisms (AREA)

Abstract

En fremgangsmåte for fremstilling av en mikroelektromekanisk eller mikrooptoelektromekanisk komponent har følgende trinn: - fremstilling av en første sjiktkompositt som har et første substrat (2) og et første isolasjonssjikt (3) som dekker i det minste en del av det første substrats (2) overflate, - fremstilling av en andre sjiktkompositt som har et andre substrat (12) og et andre isolasjonssjikt (14) som dekker i det minste en del av det andre substrats (12) overflate, - anbringelse av et i det minste delvis ledende struktursjikt (7) på det første isolasjonssjikt (3), - anbringelse av den andre kompositt på struktursjiktet (7) på en slik måte at det andre isolasjonssjikt (14) føyer seg etter struktursjiktet (7), - hvorved den første og den andre sjiktkompositt og også struktursjiktet (7) utformes på en slik måte at i det minste en del av struktursjiktet (7), som omfatter komponentens aktive område (8), forsegles hermetisk tett ved hjelp av den første og den andre sjiktkompositt, og - utforming, etter anbringelsen av den andre kompositt på struktursjiktet (7) kontakthull (4), for opprettelse av kontakt med ledende områder (9) i struktursjiktet (7) i det første og/eller det andre substrat (2, 12).
NO20075137A 2005-04-05 2007-10-09 Mikromekanisk komponent og fremgangsmåte for fremstilling av samme NO340787B1 (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005015584A DE102005015584B4 (de) 2005-04-05 2005-04-05 Verfahren zur Herstellung eines mikromechanischen Bauteils
PCT/EP2006/003023 WO2006105924A1 (de) 2005-04-05 2006-04-03 Mikromechanisches bauteil sowie verfahren zur herstellung eines mikromechanischen bauteils

Publications (2)

Publication Number Publication Date
NO20075137L true NO20075137L (no) 2008-01-03
NO340787B1 NO340787B1 (no) 2017-06-19

Family

ID=36608000

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20075137A NO340787B1 (no) 2005-04-05 2007-10-09 Mikromekanisk komponent og fremgangsmåte for fremstilling av samme

Country Status (12)

Country Link
US (1) US7964428B2 (no)
EP (1) EP1866236B1 (no)
JP (2) JP5068742B2 (no)
KR (2) KR100952027B1 (no)
CN (1) CN101142137B (no)
AU (1) AU2006232806B2 (no)
CA (2) CA2663918C (no)
DE (1) DE102005015584B4 (no)
NO (1) NO340787B1 (no)
RU (1) RU2371378C2 (no)
WO (1) WO2006105924A1 (no)
ZA (1) ZA200708994B (no)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005015584B4 (de) * 2005-04-05 2010-09-02 Litef Gmbh Verfahren zur Herstellung eines mikromechanischen Bauteils
DE102007030121A1 (de) * 2007-06-29 2009-01-02 Litef Gmbh Verfahren zur Herstellung eines Bauteils und Bauteil
FR2925888A1 (fr) * 2007-12-27 2009-07-03 Commissariat Energie Atomique Dispositif a structure pre-liberee
DE102009002559A1 (de) * 2009-04-22 2010-10-28 Robert Bosch Gmbh Sensoranordnung
JP5278147B2 (ja) * 2009-04-30 2013-09-04 大日本印刷株式会社 半導体パッケージ及び半導体パッケージの製造方法
EP2263971A1 (fr) * 2009-06-09 2010-12-22 Nivarox-FAR S.A. Pièce de micromécanique composite et son procédé de fabrication
CA2814123A1 (en) * 2010-10-12 2012-04-19 Micralyne Inc. Soi-based cmut device with buried electrodes
CN102556956B (zh) * 2012-03-08 2014-06-25 中国科学院上海微***与信息技术研究所 Mems器件的真空封装结构及其制作方法
RU2511614C2 (ru) * 2012-07-17 2014-04-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Рязанский государственный радиотехнический университет" Электронная схема и/или микроэлектромеханическая система с радиационным источником подвижных носителей заряда
JP6089481B2 (ja) * 2012-07-30 2017-03-08 セイコーエプソン株式会社 電子部品の製造方法および電子モジュールの製造方法
RU2511272C1 (ru) * 2012-10-31 2014-04-10 Открытое акционерное общество "Российская корпорация ракетно-космического приборостроения и информационных систем" (ОАО "Российские космические системы") Способ изготовления микроэлектромеханических реле
US9452920B2 (en) * 2013-01-30 2016-09-27 Invensense, Inc. Microelectromechanical system device with internal direct electric coupling
US8564076B1 (en) * 2013-01-30 2013-10-22 Invensense, Inc. Internal electrical contact for enclosed MEMS devices
WO2015003264A1 (en) 2013-07-08 2015-01-15 Motion Engine Inc. Mems device and method of manufacturing
US10273147B2 (en) 2013-07-08 2019-04-30 Motion Engine Inc. MEMS components and method of wafer-level manufacturing thereof
WO2015013827A1 (en) 2013-08-02 2015-02-05 Motion Engine Inc. Mems motion sensor for sub-resonance angular rate sensing
JP6590812B2 (ja) 2014-01-09 2019-10-16 モーション・エンジン・インコーポレーテッド 集積ｍｅｍｓシステム
DE102014202825B4 (de) * 2014-02-17 2023-06-07 Robert Bosch Gmbh Mikromechanisches Bauteil mit hermetischer Durchkontaktierung und Verfahren zur Herstellung eines mikromechanischen Bauteils mit einer hermetischen Durchkontaktierung
DE102014002824A1 (de) * 2014-02-25 2015-08-27 Northrop Grumman Litef Gmbh Verfahren zur Herstellung eines Bauteils
NO2777050T3 (no) 2014-02-25 2018-06-16
US20170030788A1 (en) 2014-04-10 2017-02-02 Motion Engine Inc. Mems pressure sensor
US11674803B2 (en) 2014-06-02 2023-06-13 Motion Engine, Inc. Multi-mass MEMS motion sensor
KR20150145413A (ko) * 2014-06-19 2015-12-30 삼성전기주식회사 센서 패키지 및 그 제조 방법
US9714166B2 (en) 2014-07-16 2017-07-25 Taiwan Semiconductor Manufacturing Co., Ltd. Thin film structure for hermetic sealing
JP2016095236A (ja) * 2014-11-14 2016-05-26 セイコーエプソン株式会社 慣性センサーの製造方法および慣性センサー
CN105645347B (zh) * 2014-11-18 2017-08-08 无锡华润上华半导体有限公司 体硅微加工工艺的定位方法
US11287486B2 (en) 2014-12-09 2022-03-29 Motion Engine, Inc. 3D MEMS magnetometer and associated methods
US10407299B2 (en) 2015-01-15 2019-09-10 Motion Engine Inc. 3D MEMS device with hermetic cavity
DE102016200499A1 (de) * 2016-01-16 2017-07-20 Robert Bosch Gmbh Mikromechanisches Bauelement mit Diffusionsstoppkanal
US10062636B2 (en) * 2016-06-27 2018-08-28 Newport Fab, Llc Integration of thermally conductive but electrically isolating layers with semiconductor devices
CN109150578B (zh) * 2017-09-25 2022-09-30 上海华测导航技术股份有限公司 一种cors站远程批量参数配置方法
RU2662061C1 (ru) * 2017-10-25 2018-07-23 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет "Московский институт электронной техники" Способ герметизации мэмс устройств
EP4219391A1 (de) 2022-01-28 2023-08-02 Hahn-Schickard-Gesellschaft für angewandte Forschung e.V. Durchkontaktierung zum betreiben eines mems-bauteiles in einer hermetischen kavität

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01143963A (ja) 1987-11-30 1989-06-06 Aisin Seiki Co Ltd 半導体加速度センサーの製造方法
JP2549564B2 (ja) 1989-10-20 1996-10-30 山武ハネウエル株式会社 半導体素子の製造方法
FR2687778B1 (fr) * 1992-02-20 1994-05-20 Sextant Avionique Micro-capteur capacitif a capacite parasite reduite et procede de fabrication.
JPH06203712A (ja) 1993-01-08 1994-07-22 Seiko Instr Inc 絶対圧型半導体圧力センサ
JPH07263709A (ja) * 1994-03-17 1995-10-13 Hitachi Ltd 力学量センサおよびエアバッグシステム
JPH07306222A (ja) 1994-05-13 1995-11-21 Hitachi Ltd 加速度センサ
JP3325133B2 (ja) 1994-09-28 2002-09-17 豊田工機株式会社 容量型加速度センサの製造方法
US6969635B2 (en) * 2000-12-07 2005-11-29 Reflectivity, Inc. Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates
JPH09283663A (ja) * 1996-04-08 1997-10-31 Omron Corp 電子デバイスの製造方法及び電子デバイス
JPH1068742A (ja) * 1996-08-27 1998-03-10 Akebono Brake Ind Co Ltd 加速度スイッチおよび加速度スイッチの製造方法ならびに加速度スイッチを用いた加速度センサー
FR2763745B1 (fr) * 1997-05-23 1999-08-27 Sextant Avionique Procede de fabrication d'un micro-capteur en silicium usine
FR2770339B1 (fr) * 1997-10-27 2003-06-13 Commissariat Energie Atomique Structure munie de contacts electriques formes a travers le substrat de cette structure et procede d'obtention d'une telle structure
US6287885B1 (en) * 1998-05-08 2001-09-11 Denso Corporation Method for manufacturing semiconductor dynamic quantity sensor
KR100276429B1 (ko) * 1998-09-07 2000-12-15 정선종 미소 진공 구조체의 제작방법
JP2000186931A (ja) * 1998-12-21 2000-07-04 Murata Mfg Co Ltd 小型電子部品及びその製造方法並びに該小型電子部品に用いるビアホールの成形方法
KR100314622B1 (ko) * 1999-06-15 2001-11-17 이형도 마이크로 센서 및 그 패키지방법
JP2001141463A (ja) 1999-11-15 2001-05-25 Ngk Spark Plug Co Ltd マイクロ構造物及びその製造方法
WO2001053194A1 (en) * 2000-01-19 2001-07-26 Mitsubishi Denki Kabushiki Kaisha Microdevice and its production method
JP4356217B2 (ja) * 2000-08-29 2009-11-04 株式会社村田製作所 電子部品の製造方法及び電子部品
DE50112140D1 (de) * 2001-07-26 2007-04-12 Fraunhofer Ges Forschung Mikromechanisches bauelement
US7074638B2 (en) * 2002-04-22 2006-07-11 Fuji Photo Film Co., Ltd. Solid-state imaging device and method of manufacturing said solid-state imaging device
JP2003322662A (ja) 2002-04-30 2003-11-14 Mitsubishi Electric Corp 電子デバイス及びその製造方法
JP2003329704A (ja) * 2002-05-14 2003-11-19 Mitsubishi Electric Corp 慣性力センサ、およびその製造方法
US6867060B2 (en) * 2002-11-27 2005-03-15 Intel Corporation Wafer-level packaging of electronic devices before singulation
KR100492105B1 (ko) * 2002-12-24 2005-06-01 삼성전자주식회사 수평 가진 수직형 ｍｅｍｓ 자이로스코프 및 그 제작 방법
DE10324421B4 (de) * 2003-05-28 2010-11-25 Hahn-Schickard-Gesellschaft für angewandte Forschung e.V. Halbleiterbauelement mit Metallisierungsfläche und Verfahren zur Herstellung desselben
US7422928B2 (en) 2003-09-22 2008-09-09 Matsushita Electric Works, Ltd. Process for fabricating a micro-electro-mechanical system with movable components
US7005732B2 (en) * 2003-10-21 2006-02-28 Honeywell International Inc. Methods and systems for providing MEMS devices with a top cap and upper sense plate
JP4422624B2 (ja) * 2004-03-03 2010-02-24 日本航空電子工業株式会社 微小可動デバイス及びその作製方法
TWI236111B (en) * 2004-06-30 2005-07-11 Ind Tech Res Inst Apparatus and method for wafer level packaging
DE102005015584B4 (de) * 2005-04-05 2010-09-02 Litef Gmbh Verfahren zur Herstellung eines mikromechanischen Bauteils

Also Published As

Publication number Publication date
DE102005015584A1 (de) 2006-10-26
RU2371378C2 (ru) 2009-10-27
JP5068742B2 (ja) 2012-11-07
CN101142137B (zh) 2012-05-30
JP2008534306A (ja) 2008-08-28
JP2012020397A (ja) 2012-02-02
WO2006105924A1 (de) 2006-10-12
EP1866236B1 (de) 2017-03-08
RU2007133922A (ru) 2009-05-20
KR20070120549A (ko) 2007-12-24
US20090152705A1 (en) 2009-06-18
KR100952027B1 (ko) 2010-04-08
CA2663918A1 (en) 2006-10-12
CA2602103A1 (en) 2006-10-05
ZA200708994B (en) 2008-08-27
AU2006232806B2 (en) 2009-07-09
NO340787B1 (no) 2017-06-19
DE102005015584B4 (de) 2010-09-02
CA2663918C (en) 2014-02-18
KR20100034044A (ko) 2010-03-31
AU2006232806A1 (en) 2006-10-12
EP1866236A1 (de) 2007-12-19
US7964428B2 (en) 2011-06-21
CN101142137A (zh) 2008-03-12
JP5323905B2 (ja) 2013-10-23

Similar Documents

Publication Publication Date Title
NO20075137L (no) Mikromekanisk komponent og fremgangsmate for fremstilling av samme
JP2011044517A5 (no)
WO2009003542A3 (de) Verfahren zur herstellung von leiterbahnbrücken und bauteil mit leitfähiger schicht
FR2963982B1 (fr) Procede de collage a basse temperature
TW200715621A (en) Procedure for producing a semiconductor component with a planner contact and the semiconductor component
ATE504543T1 (de) Verbund aus mindestens zwei halbleitersubstraten sowie herstellungsverfahren
WO2007017404A3 (de) Anordnung zur hermetischen abdichtung von bauelementen und verfahren zu deren herstellung
WO2006112995A3 (en) Glass-based semiconductor on insulator structures and methods of making same
WO2004032247A3 (de) Strahlungsemittierendes halbleiterbauelement und verfahren zur herstellung
TW200701335A (en) Nitride semiconductor device and manufacturing mathod thereof
WO2007044324A3 (en) Structure and method for forming asymmetrical overlap capacitance in field effect transistors
ATE500533T1 (de) Kontaktierung von elektrochromen anordnungen
WO2009145465A3 (ko) 발광 소자 및 그 제조방법
TW200705541A (en) Manufacturing method of nano-sticker
WO2007127074A3 (en) Semiconductor on glass insulator made using improved thinning process
WO2010090798A3 (en) Substrate bonding with metal germanium silicon material
TW200707667A (en) Semiconductor device and method for manufacture thereof
WO2010025696A3 (de) Verfahren zur herstellung eines organischen strahlungsemittierenden bauelements und organisches strahlungsemittierendes bauelement
WO2009056235A3 (de) Mehrschichtsystem mit kontaktelementen und verfahren zum erstellen eines kontaktelements für ein mehrschichtsystem
TW200739989A (en) Organic light emitting display device and method of fabricating the same
SG133473A1 (en) A method to fabricate ge and si devices together for performance enhancement
EP1693891A3 (en) Method of manufacturing a semiconductor device
TW200729499A (en) Method of forming a semiconductor device
WO2003046948A3 (de) Bipolare halbleitervorrichtung und verfahren zu ihrer herstellung
WO2008099700A1 (ja) ダブルゲートトランジスタおよびその製造方法ならびにダブルゲートトランジスタを備えるアクティブマトリクス基板

Legal Events

Date Code Title Description
MM1K Lapsed by not paying the annual fees