MY8700639A - A dynamic random access memory - Google Patents
A dynamic random access memoryInfo
- Publication number
- MY8700639A MY8700639A MY639/87A MY8700639A MY8700639A MY 8700639 A MY8700639 A MY 8700639A MY 639/87 A MY639/87 A MY 639/87A MY 8700639 A MY8700639 A MY 8700639A MY 8700639 A MY8700639 A MY 8700639A
- Authority
- MY
- Malaysia
- Prior art keywords
- random access
- access memory
- dynamic random
- dynamic
- memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57036422A JPS58155596A (ja) | 1982-03-10 | 1982-03-10 | ダイナミツク型mosram |
Publications (1)
Publication Number | Publication Date |
---|---|
MY8700639A true MY8700639A (en) | 1987-12-31 |
Family
ID=12469383
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MY639/87A MY8700639A (en) | 1982-03-10 | 1987-12-30 | A dynamic random access memory |
Country Status (10)
Country | Link |
---|---|
US (2) | US4549284A (ko) |
JP (1) | JPS58155596A (ko) |
KR (1) | KR910002028B1 (ko) |
DE (1) | DE3305501A1 (ko) |
FR (1) | FR2523356A1 (ko) |
GB (1) | GB2116338B (ko) |
HK (1) | HK69387A (ko) |
IT (1) | IT1160500B (ko) |
MY (1) | MY8700639A (ko) |
SG (1) | SG41587G (ko) |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58155596A (ja) * | 1982-03-10 | 1983-09-16 | Hitachi Ltd | ダイナミツク型mosram |
JPS58192148A (ja) * | 1982-05-07 | 1983-11-09 | Hitachi Ltd | 演算処理装置 |
US4639858A (en) * | 1983-07-05 | 1987-01-27 | Honeywell Information Systems Inc. | Apparatus and method for testing and verifying the refresh logic of dynamic MOS memories |
JPS6055593A (ja) * | 1983-09-06 | 1985-03-30 | Nec Corp | 擬似スタティックメモリ |
US4625296A (en) * | 1984-01-17 | 1986-11-25 | The Perkin-Elmer Corporation | Memory refresh circuit with varying system transparency |
JPS615495A (ja) * | 1984-05-31 | 1986-01-11 | Toshiba Corp | 半導体記憶装置 |
JPS6199199A (ja) * | 1984-09-28 | 1986-05-17 | 株式会社東芝 | 音声分析合成装置 |
JPS621187A (ja) * | 1985-06-26 | 1987-01-07 | Toshiba Corp | ダイナミツクメモリのアクセス制御方式 |
JPS6212991A (ja) * | 1985-07-10 | 1987-01-21 | Fujitsu Ltd | 半導体記憶装置 |
JPS62103898A (ja) * | 1985-10-31 | 1987-05-14 | Mitsubishi Electric Corp | ダイナミツクランダムアクセスメモリ装置 |
JPH0612616B2 (ja) * | 1986-08-13 | 1994-02-16 | 日本テキサス・インスツルメンツ株式会社 | 半導体記憶装置 |
JPS6355797A (ja) * | 1986-08-27 | 1988-03-10 | Fujitsu Ltd | メモリ |
JPS63140490A (ja) * | 1986-12-03 | 1988-06-13 | Sharp Corp | ダイナミツクram |
US4924441A (en) * | 1987-03-18 | 1990-05-08 | Hayes Microcomputer Products, Inc. | Method and apparatus for refreshing a dynamic memory |
JPS63247997A (ja) * | 1987-04-01 | 1988-10-14 | Mitsubishi Electric Corp | 半導体記憶装置 |
JPH0253293A (ja) * | 1988-08-17 | 1990-02-22 | Sharp Corp | ダイナミックメモリ |
JPH0253292A (ja) * | 1988-08-17 | 1990-02-22 | Sharp Corp | ダイナミックメモリ |
JP2617779B2 (ja) * | 1988-08-31 | 1997-06-04 | 三菱電機株式会社 | 半導体メモリ装置 |
US4953131A (en) * | 1988-09-07 | 1990-08-28 | Unisys Corporation | Unconditional clock and automatic refresh logic |
JP2646032B2 (ja) * | 1989-10-14 | 1997-08-25 | 三菱電機株式会社 | Lifo方式の半導体記憶装置およびその制御方法 |
US5033027A (en) * | 1990-01-19 | 1991-07-16 | Dallas Semiconductor Corporation | Serial DRAM controller with multi generation interface |
IL96808A (en) * | 1990-04-18 | 1996-03-31 | Rambus Inc | Introductory / Origin Circuit Agreed Using High-Performance Brokerage |
US5148546A (en) * | 1991-04-22 | 1992-09-15 | Blodgett Greg A | Method and system for minimizing power demands on portable computers and the like by refreshing selected dram cells |
JP3143950B2 (ja) * | 1991-04-30 | 2001-03-07 | 日本電気株式会社 | ダイナミックメモリー |
GB2265035B (en) * | 1992-03-12 | 1995-11-22 | Apple Computer | Method and apparatus for improved dram refresh operations |
US5430680A (en) * | 1993-10-12 | 1995-07-04 | United Memories, Inc. | DRAM having self-timed burst refresh mode |
KR970001699B1 (ko) * | 1994-03-03 | 1997-02-13 | 삼성전자 주식회사 | 자동프리차아지기능을 가진 동기식 반도체메모리장치 |
USRE36532E (en) * | 1995-03-02 | 2000-01-25 | Samsung Electronics Co., Ltd. | Synchronous semiconductor memory device having an auto-precharge function |
US6028804A (en) * | 1998-03-09 | 2000-02-22 | Monolithic System Technology, Inc. | Method and apparatus for 1-T SRAM compatible memory |
US6072746A (en) | 1998-08-14 | 2000-06-06 | International Business Machines Corporation | Self-timed address decoder for register file and compare circuit of a multi-port CAM |
US5999474A (en) | 1998-10-01 | 1999-12-07 | Monolithic System Tech Inc | Method and apparatus for complete hiding of the refresh of a semiconductor memory |
US6707743B2 (en) | 1998-10-01 | 2004-03-16 | Monolithic System Technology, Inc. | Method and apparatus for completely hiding refresh operations in a DRAM device using multiple clock division |
US6504780B2 (en) * | 1998-10-01 | 2003-01-07 | Monolithic System Technology, Inc. | Method and apparatus for completely hiding refresh operations in a dram device using clock division |
US6370073B2 (en) | 1998-10-01 | 2002-04-09 | Monlithic System Technology, Inc. | Single-port multi-bank memory system having read and write buffers and method of operating same |
US6898140B2 (en) | 1998-10-01 | 2005-05-24 | Monolithic System Technology, Inc. | Method and apparatus for temperature adaptive refresh in 1T-SRAM compatible memory using the subthreshold characteristics of MOSFET transistors |
US6415353B1 (en) | 1998-10-01 | 2002-07-02 | Monolithic System Technology, Inc. | Read/write buffers for complete hiding of the refresh of a semiconductor memory and method of operating same |
US6496437B2 (en) | 1999-01-20 | 2002-12-17 | Monolithic Systems Technology, Inc. | Method and apparatus for forcing idle cycles to enable refresh operations in a semiconductor memory |
US6529433B2 (en) | 2001-04-03 | 2003-03-04 | Hynix Semiconductor, Inc. | Refresh mechanism in dynamic memories |
KR100431303B1 (ko) | 2002-06-28 | 2004-05-12 | 주식회사 하이닉스반도체 | 페이지 기록 모드를 수행할 수 있는 슈도 스태틱램 |
US6795364B1 (en) * | 2003-02-28 | 2004-09-21 | Monolithic System Technology, Inc. | Method and apparatus for lengthening the data-retention time of a DRAM device in standby mode |
US7113439B2 (en) * | 2004-04-22 | 2006-09-26 | Memocom Corp. | Refresh methods for RAM cells featuring high speed access |
US7433996B2 (en) * | 2004-07-01 | 2008-10-07 | Memocom Corp. | System and method for refreshing random access memory cells |
US7532532B2 (en) | 2005-05-31 | 2009-05-12 | Micron Technology, Inc. | System and method for hidden-refresh rate modification |
US7274618B2 (en) | 2005-06-24 | 2007-09-25 | Monolithic System Technology, Inc. | Word line driver for DRAM embedded in a logic process |
US7369451B2 (en) * | 2005-10-31 | 2008-05-06 | Mosaid Technologies Incorporated | Dynamic random access memory device and method for self-refreshing memory cells |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
HU169522B (ko) * | 1974-12-03 | 1976-12-28 | ||
US4084154A (en) * | 1975-05-01 | 1978-04-11 | Burroughs Corporation | Charge coupled device memory system with burst mode |
US4005395A (en) * | 1975-05-08 | 1977-01-25 | Sperry Rand Corporation | Compatible standby power driver for a dynamic semiconductor |
DE2543515A1 (de) * | 1975-09-30 | 1977-04-07 | Licentia Gmbh | Verfahren zum regenerieren der speicherinhalte von speicherzellen in mos-speichern und mos-speicher zur durchfuehrung des verfahrens |
US4079462A (en) * | 1976-05-07 | 1978-03-14 | Intel Corporation | Refreshing apparatus for MOS dynamic RAMs |
JPS5384534A (en) * | 1976-12-29 | 1978-07-26 | Fujitsu Ltd | Refresh system for memory unit |
JPS53148347A (en) * | 1977-05-31 | 1978-12-23 | Toshiba Corp | Dynamic memory unit |
US4238842A (en) * | 1978-12-26 | 1980-12-09 | Ibm Corporation | LARAM Memory with reordered selection sequence for refresh |
JPS55150192A (en) * | 1979-05-08 | 1980-11-21 | Nec Corp | Memory unit |
US4296480A (en) * | 1979-08-13 | 1981-10-20 | Mostek Corporation | Refresh counter |
DE3009872C2 (de) * | 1980-03-14 | 1984-05-30 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Regenerieren von in einem dynamischen MOS-Speicher gespeicherten Daten unter Berücksichtigung von Schreib- und Lesezyklen und Schaltungsanordnung zur Durchführung des Verfahrens |
US4412314A (en) * | 1980-06-02 | 1983-10-25 | Mostek Corporation | Semiconductor memory for use in conjunction with error detection and correction circuit |
JPS58155596A (ja) * | 1982-03-10 | 1983-09-16 | Hitachi Ltd | ダイナミツク型mosram |
-
1982
- 1982-03-10 JP JP57036422A patent/JPS58155596A/ja active Pending
-
1983
- 1983-01-24 GB GB08301839A patent/GB2116338B/en not_active Expired
- 1983-01-25 FR FR8301063A patent/FR2523356A1/fr active Pending
- 1983-02-17 DE DE19833305501 patent/DE3305501A1/de not_active Ceased
- 1983-02-26 KR KR1019830000793A patent/KR910002028B1/ko not_active IP Right Cessation
- 1983-03-09 IT IT19986/83A patent/IT1160500B/it active
- 1983-03-10 US US06/473,866 patent/US4549284A/en not_active Expired - Fee Related
-
1985
- 1985-09-03 US US06/771,899 patent/US4636989A/en not_active Expired - Fee Related
-
1987
- 1987-05-06 SG SG415/87A patent/SG41587G/en unknown
- 1987-09-24 HK HK693/87A patent/HK69387A/xx unknown
- 1987-12-30 MY MY639/87A patent/MY8700639A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
HK69387A (en) | 1987-10-02 |
IT1160500B (it) | 1987-03-11 |
KR910002028B1 (ko) | 1991-03-30 |
SG41587G (en) | 1987-07-17 |
DE3305501A1 (de) | 1983-09-15 |
GB8301839D0 (en) | 1983-02-23 |
IT8319986A0 (it) | 1983-03-09 |
GB2116338B (en) | 1986-07-23 |
US4636989A (en) | 1987-01-13 |
JPS58155596A (ja) | 1983-09-16 |
US4549284A (en) | 1985-10-22 |
KR840003893A (ko) | 1984-10-04 |
FR2523356A1 (fr) | 1983-09-16 |
GB2116338A (en) | 1983-09-21 |
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