KR960701464A - 표시소자 및 그 제조방법(a display element and a method for manufacturing thereof) - Google Patents

표시소자 및 그 제조방법(a display element and a method for manufacturing thereof) Download PDF

Info

Publication number
KR960701464A
KR960701464A KR1019950703222A KR19950703222A KR960701464A KR 960701464 A KR960701464 A KR 960701464A KR 1019950703222 A KR1019950703222 A KR 1019950703222A KR 19950703222 A KR19950703222 A KR 19950703222A KR 960701464 A KR960701464 A KR 960701464A
Authority
KR
South Korea
Prior art keywords
thin film
dielectric layer
display device
display element
manufacturing
Prior art date
Application number
KR1019950703222A
Other languages
English (en)
Other versions
KR0184095B1 (ko
Inventor
이나다 가츠히코
시마다 오사무
세이키 마사히로
다다 류지
Original Assignee
사토 후미오
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 사토 후미오, 가부시키가이샤 도시바 filed Critical 사토 후미오
Publication of KR960701464A publication Critical patent/KR960701464A/ko
Application granted granted Critical
Publication of KR0184095B1 publication Critical patent/KR0184095B1/ko

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/13625—Patterning using multi-mask exposure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/946—Step and repeat

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

「이은자리」와 같이 시인되는 선모양의 휘도결함을 해소하여 균일한 표시 화소를 구비한 액정표시소자를 제공하는 것을 목적으로 하고 있으며, 예컨대 제3도에 나타낸 바와 같이 1층의 도전층 또는 유전체층을 노광처리하기도 하고, 4개의 쇼트영역(a, b, c, d)에 대응하여 합계 4장의 포토마스크(60)를 이용한다. 예컨대, 신호선(51)을 패터닝할 때의 노광처리에 이용되는 포토마스크의 차광층(62)은 신호선(51)의 사영패턴으로 되도록 형성되어 있다. 또한, 인접쇼트영역에 대응하느 포토마스트, 예컨대 마스크(a)와 마스크(b)는 그 경계부분의 차광층(62) 패턴이 평균적으로 서로 감합하고 있는 형상으로 형성되어 있다.

Description

표시소자 및 그 제조방법(A DISPLAY ELEMENT AND A METHOD FOR MANUFACTURING THEREOF)
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (8)

  1. 절연기판 상에 도전체층 및 유전체층을 적층형성하고, 상기 도전체층 또는 유전체층의 형성영역을 복수의 소영역으로 분할하여 패티닝을 행하므로서 단위화소를 소정 배열로 형성하는 공정을 구비한 표시소자의 제조방법에 있어서, 서로 인접하는 상기 소영역의 경계선을 비직선모양으로 설정하는 것을 특징으로 하는 표시소자의 제조방법.
  2. 절연기판 상에 도전체층 또는 유전체층으로 이루어진 제1박막 및 제2박막을 적층형성하고, 상기 제1박막 및 제2박막의 형성영역을 복수의 소영역으로 분할하여 패터닝을 햄함으로써 단위화소를 소정 배열로 형성하는 공정을 귑한 표시소자의 제조방법에 있어서, 상기 제1박막의 서로 인접하는 상기 소영역의 경계선 및 상기 제2박막의 서로 인접하는 상기 소영역의 경계선을 함게 비직선모양으로 설정함과 더불어 상기 제1박막의 경계선과 제2박막의 경계선을 함께 동일한 단위화소영역을 통하도록 설정하는 것을 특징으로 하는 표시소자의 제조방법.
  3. 제1항에 있어서, 상기 표시소자는 액정디스플레이인 것을 특징으로 하는 표시소자의 제조방법.
  4. 제1항에 있어서, 상기 패터닝을 광조사수단을 이용함으로써 행하는 것을 특징으로 하는 표시소자의 제조방법.
  5. 절연기판상에 도전체층 및 유전체층을 적층형성하고, 상기 도전체층 또는 유전체층의 형성영역을 복수의 소영역으로 불할하여 태터닝을 행함으로써 단위화소를 소정 배열로 형성하는 공정을 구비한 표시소자의 제조방법에 있어서, 서로 인접하는 상기 소영역의 경계선을 비직선모양으로 설정함과 더불어 상기 경계선을 임의의 상기 단위화소를 복수회 횡으로 절단하도록 설정하는 것을 특징으로 하는 표시소자의 제조방법.
  6. 절연기판 상에 도전체층 및 유전체층을 적층형성하여 소정 형상으로 패터닝하여 이루어진 단위화소어레이를 구비한 표시소자에 있어서, 상기 단위화소어레이가 다른 광투과율 특성을 나타내는 복수의 소영역을 분할 되면서 인접하는 상기 소영역의 경계선의 시점과 종점을 잇는 직선상에 광투과율이 다른 다윈화소가 혼재하는 것을 특징으로 하는 표시소자.
  7. 제6항에 있어서, 상기 광투과율이 다른화소끼리의 광투과율차가 0.5% 이상인 것을 특징으로 하는 표시소자.
  8. 제6항에 있어서, 상기 표시소자는 액정디스플레이인 것을 특징으로 하는 표시소자.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950703222A 1993-12-07 1994-12-07 표시소자 및 그 제조방법 KR0184095B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP93-306186 1993-12-07
JP30618693 1993-12-07
PCT/JP1994/002053 WO1995016276A1 (en) 1993-12-07 1994-12-07 Display device and its manufacture

Publications (2)

Publication Number Publication Date
KR960701464A true KR960701464A (ko) 1996-02-24
KR0184095B1 KR0184095B1 (ko) 1999-04-15

Family

ID=17954060

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950703222A KR0184095B1 (ko) 1993-12-07 1994-12-07 표시소자 및 그 제조방법

Country Status (7)

Country Link
US (2) US5656526A (ko)
EP (2) EP0683507B1 (ko)
JP (1) JP3375966B2 (ko)
KR (1) KR0184095B1 (ko)
DE (1) DE69430696T2 (ko)
TW (1) TW287245B (ko)
WO (1) WO1995016276A1 (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100329210B1 (ko) * 1998-03-12 2002-03-21 니시무로 타이죠 액정표시장치의 제조방법
KR100468234B1 (ko) * 1996-05-08 2005-06-22 가부시키가이샤 니콘 노광방법,노광장치및디스크

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4075019B2 (ja) * 1996-01-10 2008-04-16 株式会社ニコン 固体撮像装置
JP2776360B2 (ja) * 1996-02-28 1998-07-16 日本電気株式会社 薄膜トランジスタアレイ基板の製造方法
KR100502797B1 (ko) * 1997-12-01 2005-10-19 삼성전자주식회사 액정 표시 장치 및 그의 제조 방법
KR100502794B1 (ko) * 1997-12-06 2005-10-14 삼성전자주식회사 액정 표시 장치의 패널 제조 방법
KR100560978B1 (ko) * 1998-06-09 2006-06-20 삼성전자주식회사 노광 방법 및 이를 이용한 액정 표시 패널의 제조 방법
US6356320B1 (en) * 1999-11-03 2002-03-12 Lg. Philips Lcd Co., Ltd. LCD with TFT array having wave-shaped resistance pattern to correct stitching defect
JP2001154371A (ja) 1999-11-30 2001-06-08 Nikon Corp 回路デバイスや表示デバイスの製造方法、及び大型ディスプレー装置
JP5408829B2 (ja) * 1999-12-28 2014-02-05 ゲットナー・ファンデーション・エルエルシー アクティブマトリックス基板の製造方法
TW495836B (en) * 2000-02-02 2002-07-21 Nikon Corp Scanning exposure method and device
JP2003005346A (ja) * 2001-06-21 2003-01-08 Toshiba Corp マスク製造方法及びマスク製造装置
JP5019190B2 (ja) * 2001-06-26 2012-09-05 株式会社ジャパンディスプレイセントラル 液晶表示装置の製造方法及びマスク製造装置
AU2002330338A1 (en) * 2001-12-14 2003-06-30 Samsung Electronics Co., Ltd. A manufacturing method of a panel for liquid crystal
TW510982B (en) * 2002-01-02 2002-11-21 Hannstar Display Corp Method for dividing the exposing region
FR2843462B1 (fr) * 2002-08-06 2004-09-24 Thales Sa Procede de fabrication d'une matrice active, dispositifs de visualisation electro-optiques et masque correspondant
US7115998B2 (en) * 2002-08-29 2006-10-03 Micron Technology, Inc. Multi-component integrated circuit contacts
JP4365594B2 (ja) 2003-01-27 2009-11-18 シャープ株式会社 パターン形成方法、薄膜トランジスタ基板の製造方法、液晶表示装置の製造方法、及び露光マスク
JP2004279482A (ja) * 2003-03-12 2004-10-07 Sharp Corp 表示装置
US6879038B2 (en) * 2003-03-12 2005-04-12 Optical Communication Products, Inc. Method and apparatus for hermetic sealing of assembled die
JP4372576B2 (ja) * 2003-03-19 2009-11-25 シャープ株式会社 露光マスクおよびパターン露光方法
TW200421439A (en) * 2003-04-04 2004-10-16 Innolux Display Corp Photo-mask process and the method of fabricating a thin film transistor
JP2004325872A (ja) * 2003-04-25 2004-11-18 Fuji Photo Film Co Ltd 露光装置及び露光方法
TWI225961B (en) * 2003-11-17 2005-01-01 Au Optronics Corp Method of fabricating a liquid crystal display
JP4377304B2 (ja) * 2004-09-01 2009-12-02 シャープ株式会社 液晶表示装置の製造方法
KR101068285B1 (ko) * 2004-09-13 2011-09-28 엘지디스플레이 주식회사 액정표시장치 노광 마스크 패턴 및 노광 방법
US7898641B2 (en) * 2004-12-02 2011-03-01 Sharp Kabushiki Kaisha Production process of a display device, and a display device
JP5243686B2 (ja) * 2005-04-28 2013-07-24 エルジー ディスプレイ カンパニー リミテッド 薄膜トランジスタ
JP5425382B2 (ja) * 2007-08-27 2014-02-26 エルジー ディスプレイ カンパニー リミテッド デジタル表示装置の駆動装置
JP2009251013A (ja) * 2008-04-01 2009-10-29 Hitachi Displays Ltd アクティブマトリクス型液晶表示装置および表示装置の製造方法
JP2010141093A (ja) * 2008-12-11 2010-06-24 Sony Corp 半導体装置とその製造方法
KR101232181B1 (ko) * 2010-02-03 2013-02-12 엘지디스플레이 주식회사 마스크 어셈블리
JP5299407B2 (ja) * 2010-11-16 2013-09-25 株式会社ジャパンディスプレイ 液晶表示装置
US20160048015A1 (en) * 2014-08-13 2016-02-18 Pixtronix, Inc. Displays having reduced optical sensitivity to aperture alignment at stepper field boundary
CN104166315B (zh) * 2014-08-14 2017-05-17 深圳市华星光电技术有限公司 曝光方法及曝光机
US20160077329A1 (en) * 2014-09-11 2016-03-17 Pixtronix, Inc. Dithered displays and dithering processes and apparatus
CN106887406B (zh) * 2017-03-29 2019-11-15 深圳市华星光电半导体显示技术有限公司 一种阵列基板的制作方法
KR102661702B1 (ko) * 2018-12-28 2024-05-02 삼성디스플레이 주식회사 폴더블 표시 장치 및 그의 제조 방법
KR20210047062A (ko) * 2019-10-21 2021-04-29 삼성전자주식회사 인터포저 및 그 제조방법

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS584927A (ja) * 1981-06-30 1983-01-12 Nec Ic Microcomput Syst Ltd パタ−ン作成方法
US4878086A (en) * 1985-04-01 1989-10-31 Canon Kabushiki Kaisha Flat panel display device and manufacturing of the same
JPS61240281A (ja) * 1985-04-17 1986-10-25 キヤノン株式会社 表示装置
JPS61242021A (ja) * 1985-04-19 1986-10-28 Canon Inc 露光装置
JPH0740101B2 (ja) * 1985-04-23 1995-05-01 旭硝子株式会社 薄膜トランジスタ
FR2593632B1 (fr) * 1986-01-27 1988-03-18 Maurice Francois Ecran d'affichage a matrice active et procedes de realisation de cet ecran
JPS62183519A (ja) * 1986-02-07 1987-08-11 Canon Inc 露光装置
JPH01217325A (ja) * 1988-02-25 1989-08-30 Sharp Corp 液晶表示装置
JPH02143514A (ja) * 1988-11-25 1990-06-01 Dainippon Printing Co Ltd マスクパターンの作製方法
JPH02166419A (ja) * 1988-12-21 1990-06-27 Nippon I B M Kk 液晶表示装置
JP2518388B2 (ja) * 1989-04-19 1996-07-24 日本電気株式会社 アクティブマトリクス液晶表示素子
NL8903108A (nl) * 1989-12-20 1991-07-16 Philips Nv Werkwijze voor de vervaardiging van een inrichting en maskergroep voor de werkwijze.
US5162931A (en) * 1990-11-06 1992-11-10 Honeywell, Inc. Method of manufacturing flat panel backplanes including redundant gate lines and displays made thereby
US5352907A (en) * 1991-03-29 1994-10-04 Casio Computer Co., Ltd. Thin-film transistor
JPH05196961A (ja) * 1992-01-20 1993-08-06 Hitachi Ltd 薄膜デバイスの製造方法
KR970006733B1 (ko) * 1993-12-14 1997-04-29 엘지전자 주식회사 박막트랜지스터 제조방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100468234B1 (ko) * 1996-05-08 2005-06-22 가부시키가이샤 니콘 노광방법,노광장치및디스크
KR100329210B1 (ko) * 1998-03-12 2002-03-21 니시무로 타이죠 액정표시장치의 제조방법

Also Published As

Publication number Publication date
JP3375966B2 (ja) 2003-02-10
EP0940710A3 (en) 1999-12-22
DE69430696T2 (de) 2003-01-30
US5656526A (en) 1997-08-12
EP0940710A2 (en) 1999-09-08
WO1995016276A1 (en) 1995-06-15
EP0683507A1 (en) 1995-11-22
DE69430696D1 (de) 2002-07-04
US5784135A (en) 1998-07-21
EP0683507B1 (en) 2002-05-29
TW287245B (ko) 1996-10-01
EP0683507A4 (en) 1997-05-21
KR0184095B1 (ko) 1999-04-15

Similar Documents

Publication Publication Date Title
KR960701464A (ko) 표시소자 및 그 제조방법(a display element and a method for manufacturing thereof)
KR101215742B1 (ko) 그레이 톤 마스크의 제조 방법 및 그레이 톤 마스크
KR101190045B1 (ko) 포토 마스크 및 이를 이용한 액정표시장치용 어레이 기판의제조 방법
KR100848815B1 (ko) 하프톤 마스크 및 그 제조방법 및 이를 이용한평판패널디스플레이
ATE232988T1 (de) Verfahren zur herstellung von bildelement- elektroden in einer aktiven matrix
US9910356B2 (en) Method of patterning thin films
KR930016809A (ko) 액티브어드레싱기판의 제조방법 및 그 기판을 구비한 액정표시장치
US10529751B2 (en) Exposure mask and method of manufacturing a substrate using the exposure mask
KR970048753A (ko) 패턴형성방법 및 액정표시장치의 제조방법
KR950006478A (ko) 계조 마스크 및 그의 제조방법
KR20020073134A (ko) 전극들 또는 픽셀 전극들 및 액정 디스플레이 디바이스를형성하는 방법
KR100586245B1 (ko) 액정 표시 장치 제조 방법
CN110806675A (zh) 掩模板及彩膜基板的制备方法
DE69729381T2 (de) Verfahren zur herstellung einer blende und blende so hergestellt
KR101186890B1 (ko) 하프톤 마스크 및 이의 제조 방법
EP0932071A3 (en) Manufacturing method of colour liquid crystal display
EP1221072A1 (de) Kontaktlochherstellung mit hilfe sich kreuzender phasensprungkanten einer einzigen phasenmaske
JPH0728074A (ja) 表示装置及びその製造方法
KR101095539B1 (ko) 하프톤 마스크 및 이의 제조 방법
KR960032057A (ko) 화소결함을 복구할 수 있는 액정 디스플레이 소자 및 그 제조방법
JPH08122823A (ja) 薄膜トランジスタ基板及びその製造方法
JP6657755B2 (ja) カラーフィルタの製造方法及びフォトマスクセット
CN104765245A (zh) 一种灰色调掩膜及其制作方法
US20030123020A1 (en) Method of dividing an exposing region
KR100560779B1 (ko) 평판표시장치의 노광용 마스크

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20111118

Year of fee payment: 14

FPAY Annual fee payment

Payment date: 20121121

Year of fee payment: 15

LAPS Lapse due to unpaid annual fee