KR950027989A - 반도체 기판처리 방법 - Google Patents

반도체 기판처리 방법 Download PDF

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KR950027989A
KR950027989A KR1019950006451A KR19950006451A KR950027989A KR 950027989 A KR950027989 A KR 950027989A KR 1019950006451 A KR1019950006451 A KR 1019950006451A KR 19950006451 A KR19950006451 A KR 19950006451A KR 950027989 A KR950027989 A KR 950027989A
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ammonium
group
acid
bubbling
water
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히데미쓰 아오끼
마꼬또 모리따
미끼오 쓰지
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가네꼬 히사시
닛뽕덴끼 가부시끼가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/102—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration with means for agitating the liquid
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/46—Treatment of water, waste water, or sewage by electrochemical methods
    • C02F1/461—Treatment of water, waste water, or sewage by electrochemical methods by electrolysis
    • C02F1/46104—Devices therefor; Their operating or servicing
    • C02F1/4618—Devices therefor; Their operating or servicing for producing "ionised" acidic or basic water
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/46—Treatment of water, waste water, or sewage by electrochemical methods
    • C02F1/461—Treatment of water, waste water, or sewage by electrochemical methods by electrolysis
    • C02F1/46104—Devices therefor; Their operating or servicing
    • C02F1/46109—Electrodes
    • C02F2001/46133—Electrodes characterised by the material
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2201/00—Apparatus for treatment of water, waste water or sewage
    • C02F2201/46—Apparatus for electrochemical processes
    • C02F2201/461—Electrolysis apparatus
    • C02F2201/46105—Details relating to the electrolytic devices
    • C02F2201/46115—Electrolytic cell with membranes or diaphragms
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2201/00—Apparatus for treatment of water, waste water or sewage
    • C02F2201/46—Apparatus for electrochemical processes
    • C02F2201/461—Electrolysis apparatus
    • C02F2201/46105—Details relating to the electrolytic devices
    • C02F2201/4618—Supplying or removing reactants or electrolyte
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2201/00—Apparatus for treatment of water, waste water or sewage
    • C02F2201/46—Apparatus for electrochemical processes
    • C02F2201/461—Electrolysis apparatus
    • C02F2201/46105—Details relating to the electrolytic devices
    • C02F2201/4619—Supplying gas to the electrolyte
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2209/00—Controlling or monitoring parameters in water treatment
    • C02F2209/04—Oxidation reduction potential [ORP]
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2209/00—Controlling or monitoring parameters in water treatment
    • C02F2209/06—Controlling or monitoring parameters in water treatment pH

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Water Supply & Treatment (AREA)
  • Environmental & Geological Engineering (AREA)
  • Hydrology & Water Resources (AREA)
  • Electrochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Water Treatment By Electricity Or Magnetism (AREA)
  • Weting (AREA)

Abstract

애노드 및 캐소드 수를 포함하며, 산화성 또는 환원성을 구비하며, 산성 또는 알칼리성을 갖는 전해수를 미량의 전해질을 추가하여 준비된 수용액을 전기분해함으로써 획득되며, 반도체 웨이퍼의 세정, 에칭 및 린싱처리를 포함하는 습식처리에 인가된다. 상기 전해수의 효과는 종래의 산성 또는 알칼리성 화학약품의 효과보다 낮지 않으며, 반도체 제조시의 습식처리에 사용된 화학약품의 양을 현저하게 감소시킨다.

Description

반도체 기판처리 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제4도는 본 발명에서 사용되는 전해수를 준비하기 위하여 사용된 두 챔버형의 전해조를 보여주는 도식도.

Claims (15)

  1. 염화 암모늄, 아세트산 암모늄, 플루오르화 암모늄, 질산 암모늄, 브롬화 암모늄, 요오드화 암모늄, 황상 암모늄, 옥살산 암모늄, 탄산 암모늄, 시트르산 암모늄, 포름산 암모늄, 염산 및 암모니아수로 이루어진 군으로부터 선택된 하나 이상의 전해질을 8×10-2내지 2×10-5몰/범위의 농도로 탈이온수에 부가하는 제1단계와, 상기 탈이온수를 전기분해하여 하나 이상의이온수를 제조하는 제조2단계를 연속적으로 포함하는 반도체 기판처리방법.
  2. 제1항에 있어서, 킬레이트제, 염산, 포름산 및 질산으로 이루어진 군에서 선택된 하나 이상의 산을 10-2내지 10-4몰/1농도로 상기 탈 이온수에 부가하는 제3단계를 또한 포함하는 반도체 기판처리방법.
  3. 제2항에 있어서, 상기 이온수를 Cl2, Br2, I2및 O3로 이루어진 군에서 선택된 하나 이상의 기체로 버블링시키는 제4단계를 또한 포함하는 반도체 기판처리방법.
  4. 제1항에 있어서, 상기 하나 이상의 이온수는 애노드 수를 포함하고, 10-1내지 10-3몰/1농도의 플루오르화수소산 및 플루오르화 암모늄으로 이루어진 군으로부터 선택된 하나이상의 화학약품을 상기 애노드 수로 부가하는 제3단계를 또한 포함하는 반도체 기판처리방법.
  5. 제4항에 있어서, 상기 애노드 수를 Cl2, Br2, I2및 O3로 이루어진 군에서 선택된 하나 이상의 기체로 버블링시키는 제4단계를 또한 포함하는 반도체 기판처리방법.
  6. 제1항에 있어서, 상기 하나 이상의 이온수는 캐소드 수를 포함하고, 황산 및 인산으로 이루어지는 군으로부터 선택된 하나 이상의 산을 상기 부가된 전해질의 몰 농도의 1/10 내지 1/500범위의 몰 농도로 상기 케소드 수에 부가하는 제3단계를 또한 포함하는 반도체 기판처리방법.
  7. 제6항에 있어서, 상기 이온수를 H2기체로 버블링시키는 제4단계를 또한 포함한는 반도체 기판처리방법.
  8. 제1항에 있어서, 상기 하나 이상의 이온수는 케소드 수를 포함하고, H2O2를 부가된 상기 전해질의 몰 농도와 그의 1/10사이 범위의 몰 농도로 상기 케소드 수에 부가하는 제3단계를 또한 포함하는 반도체 기판처리방법.
  9. 제8항에 있어서, 상기 케소드 수를 H2기체로 버블링시키는 제4단계를 또한 포함하는 반도체 기판처리방법.
  10. 탈이온수를 전기분해하여 애노드 수를 제조하는 제1단계, 킬레이트제, 염산, 포름산 및 질산으로 이루어진 군에서 선택된 하나 이상의 산을 10-2내지 10-4몰/1범위의 농도로 상기 애노드 수에 부가하여 반도에 기판을 처리하기 위한 처리용액을 제공하는 제2단계를 연속적으로 포함하는 반도체 기판처리방법.
  11. 제10항에 있어서, 상기 이온수를 Cl2, Br2, I2및 O3로 이루어진 군에서 선택된 하나 이상의 기체로 버블링시키는 제3단계를 또한 포함하는 반도체 기판처리방법.
  12. 제1항에 있어서, 상기 하나 이상의 이온수는 애노드 수를 포함하고, 상기 애노드 수를 Cl2, Br2, I2및 O3로 이루어진 군으로 부터 선택된 하나 이상의 기체로 버블링시키는 제3단계를 또한 포함하는 반도체 기판처리방법.
  13. 제1항에 있어서, 상기 하나 이상의 이온수는 케소드 수를 포함하고, 상기 캐소드 수를 H2기체로 버블링시키는 제3단계를 포함하는 반도체 기판처리 방법.
  14. 탈이온수를 이온화하여 케소드 수를 제조하는 단계와 상기 캐소드 수를 H2기체로 버블링시키는 단계를 포함하는 반도체 기판처리방법.
  15. 10-3몰/1이상의 농도의 염소, 브롬 및 요오드의 하나 이상의 옥소산 이온을 함유하는 처리용액을 사용하는 반도체 기판처리방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950006451A 1994-03-25 1995-03-25 반도체 기판처리 방법 KR0152702B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP94-56109 1994-03-25
JP6056109A JP2743823B2 (ja) 1994-03-25 1994-03-25 半導体基板のウエット処理方法

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KR950027989A true KR950027989A (ko) 1995-10-18
KR0152702B1 KR0152702B1 (ko) 1998-12-01

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US (1) US5676760A (ko)
JP (1) JP2743823B2 (ko)
KR (1) KR0152702B1 (ko)
GB (1) GB2287827B (ko)
TW (1) TW260815B (ko)

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