KR900000916A - 불휘발성 메모리 회로장치 - Google Patents

불휘발성 메모리 회로장치 Download PDF

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Publication number
KR900000916A
KR900000916A KR1019890008651A KR890008651A KR900000916A KR 900000916 A KR900000916 A KR 900000916A KR 1019890008651 A KR1019890008651 A KR 1019890008651A KR 890008651 A KR890008651 A KR 890008651A KR 900000916 A KR900000916 A KR 900000916A
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KR
South Korea
Prior art keywords
cell
nonvolatile memory
dummy
circuit device
current
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Application number
KR1019890008651A
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English (en)
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KR920001077B1 (ko
Inventor
노부다카 기타가와
마고토 이토
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
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Publication of KR900000916A publication Critical patent/KR900000916A/ko
Application granted granted Critical
Publication of KR920001077B1 publication Critical patent/KR920001077B1/ko

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells

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  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)

Abstract

내용 없음.

Description

불휘발성 메모리회로장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 일실시예를 나타낸 패턴평면도.
제2도는 본 발명의 일실시예에 따른 작용을 나타낸 특성도.
제3도는 본 발명의 다른 실시예를 나타낸 단면도.

Claims (3)

  1. 반도체집적회로장치에 설치되어 전기적으로 데이터를 기록할 수 있도록 된 불휘발성 메모리회로에 있어서, 독출대상으로 되는 메모리셀 트랜지스터(11 ; 대상셀)와, 같은 조건에서 구동되는 더미셀 트랜지스터셀(12 ; 더미셀) 및, 상기 대상셀(11)과 더미셀(12)의 전류특성의 차이에 따라 대상셀(11)의 기록상태를 논리값으로 변환시키는 논리게이트회로로 이루어진 감지증폭기(6)를 갖추고서; 비기록대상셀(11)의 소오스와 드레인간의 전류를 I1으로, 더미셀(12)의 소오스와 드레인간의 전류를 I2로, 기록대상셀(11)의 소오스와 드레인간의 전류를 I3로 할 때, I1〉I2〉I3의 관계를 갖도록 상기 각 셀(11,12)이 구성된 것을 특징으로 하는 불휘발성 메모리회로장치.
  2. 제1항에 있어서, 상기 대상셀(11)과 더미셀(12)이 같은 제조공정으로 제조되면서, 각 셀(11,12)의 소자치수와, 제1층 다결정실리콘으로 이루어진 부유게이트(FG)와 제2층 다결정실리콘으로 이루어진 제어게이트(CG)로 구성된 셀에서의 결합비인 제어게이트와 부유게이트간의 용량(C2)/부유게이트와 기판간 용량(C1)중 어느한쪽 또는 양쪽이 다르게 된 것을 특징으로 하는 불휘발성 메모리회로장치.
  3. 제1항에 있어서, 상기 트랜지스터(11)(12)의 치수비인 채널폭/채널길이의 관점에서 대상셀(11)의 치수에 비해 더미셀(12)의 치수가 1/1.5∼1/3배로 된 것을 특징으로 하는 불휘발성 메모리회로장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890008651A 1988-06-24 1989-06-22 불휘발성 메모리회로장치 KR920001077B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP88-156462 1988-06-24
JP15646288A JPH0770235B2 (ja) 1988-06-24 1988-06-24 不揮発性メモリ回路装置

Publications (2)

Publication Number Publication Date
KR900000916A true KR900000916A (ko) 1990-01-31
KR920001077B1 KR920001077B1 (ko) 1992-02-01

Family

ID=15628278

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890008651A KR920001077B1 (ko) 1988-06-24 1989-06-22 불휘발성 메모리회로장치

Country Status (5)

Country Link
US (1) US4972378A (ko)
EP (1) EP0347909B1 (ko)
JP (1) JPH0770235B2 (ko)
KR (1) KR920001077B1 (ko)
DE (1) DE68919545T2 (ko)

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JP2001167591A (ja) * 1999-12-08 2001-06-22 Matsushita Electric Ind Co Ltd 半導体記憶装置
JP2573335B2 (ja) * 1988-11-09 1997-01-22 株式会社東芝 不揮発性メモリ
US5237534A (en) * 1989-04-27 1993-08-17 Kabushiki Kaisha Toshiba Data sense circuit for a semiconductor nonvolatile memory device
JP2573380B2 (ja) * 1989-12-22 1997-01-22 株式会社東芝 不揮発性半導体メモリ
US5260706A (en) * 1990-03-29 1993-11-09 Samsung Electronics Co., Ltd. Priority encoder
US5627778A (en) * 1990-07-24 1997-05-06 Texas Instruments Incorporated Dram sensing scheme
US5299165A (en) * 1990-10-17 1994-03-29 Hitachi, Ltd Semiconductor memory having one-transistor/one-capacitor memory cells and having both improved noise ratio and high density integration
JP3002309B2 (ja) * 1990-11-13 2000-01-24 ウエハスケール インテグレーション， インコーポレイテッド 高速ｅｐｒｏｍアレイ
JP2637314B2 (ja) * 1991-08-30 1997-08-06 株式会社東芝 不揮発性メモリ回路
US5526307A (en) * 1992-01-22 1996-06-11 Macronix International Co., Ltd. Flash EPROM integrated circuit architecture
US5618742A (en) * 1992-01-22 1997-04-08 Macronix Internatioal, Ltd. Method of making flash EPROM with conductive sidewall spacer contacting floating gate
EP1032034A1 (en) * 1992-01-22 2000-08-30 Macronix International Co., Ltd. Method of making memory device
US5267196A (en) * 1992-06-19 1993-11-30 Intel Corporation Floating gate nonvolatile memory with distributed blocking feature
JPH06192109A (ja) * 1992-09-04 1994-07-12 Fuji Kagaku Kogyo Kk 抗腫瘍効果増強剤
JP3474614B2 (ja) * 1993-12-14 2003-12-08 マクロニクス インターナショナル カンパニイ リミテッド 不揮発性半導体メモリ装置及びその動作方法
DE69426487T2 (de) * 1994-03-28 2001-06-07 Stmicroelectronics S.R.L., Agrate Brianza Verfahren und Schaltung zur Referenzsignalerzeugung zur Differentialauswertung des Inhalts von nichtflüchtigen Speicherzellen
DE4425280C2 (de) * 1994-07-16 1997-05-07 Knoll Ag Verwendung von (S)-Adenosyl-L-methionin und dessen physiologisch verträglichen Salzen zur Behandlung von Reperfusionsschäden, die nach temporärer fokaler Ischämie ausgelöst werden
GB9423034D0 (en) * 1994-11-15 1995-01-04 Sgs Thomson Microelectronics A reference circuit
EP0830684B1 (en) * 1995-06-07 2004-08-25 Macronix International Co., Ltd. Automatic programming algorithm for page mode flash memory with variable programming pulse height and pulse width
US5650966A (en) * 1995-11-01 1997-07-22 Advanced Micro Devices, Inc. Temperature compensated reference for overerase correction circuitry in a flash memory
US5640114A (en) * 1995-12-27 1997-06-17 Vlsi Technology, Inc. Versatile select and hold scan flip-flop
DE69630672D1 (de) * 1996-03-29 2003-12-18 St Microelectronics Srl Referenzsystem zur Bestimmung des Programmierungs-/Nicht-Programmierungszustandes einer Speicherzelle, insbesondere für nichtflüchtige Speicher
KR100357692B1 (ko) * 2000-10-27 2002-10-25 삼성전자 주식회사 비휘발성 메모리소자 및 그 제조방법
JP4472449B2 (ja) * 2004-07-12 2010-06-02 富士通マイクロエレクトロニクス株式会社 半導体記憶装置および半導体記憶装置の制御方法
JP4628114B2 (ja) * 2005-01-20 2011-02-09 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
JP4609722B2 (ja) * 2005-12-09 2011-01-12 セイコーエプソン株式会社 強誘電体記憶装置および電子機器
JP6465093B2 (ja) * 2016-10-17 2019-02-06 株式会社椿本チエイン 可動体移動装置
WO2018073708A1 (en) * 2016-10-20 2018-04-26 Semiconductor Energy Laboratory Co., Ltd. Storage device, driving method thereof, semiconductor device, electronic component, and electronic device

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JPS57192067A (en) * 1981-05-22 1982-11-26 Hitachi Ltd Erasable and programmable read only memory unit
EP0085260B1 (en) * 1981-12-29 1989-08-02 Fujitsu Limited Nonvolatile semiconductor memory circuit
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JPS62197996A (ja) * 1986-02-24 1987-09-01 Toshiba Corp 半導体メモリのセンスアンプ
JPS62231500A (ja) * 1986-03-31 1987-10-12 Toshiba Corp 半導体記憶装置

Also Published As

Publication number Publication date
EP0347909A2 (en) 1989-12-27
JPH0770235B2 (ja) 1995-07-31
US4972378A (en) 1990-11-20
EP0347909A3 (en) 1991-08-14
DE68919545D1 (de) 1995-01-12
JPH027293A (ja) 1990-01-11
EP0347909B1 (en) 1994-11-30
DE68919545T2 (de) 1995-05-04
KR920001077B1 (ko) 1992-02-01

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