KR870008317A - 반도체 기억장치 - Google Patents
반도체 기억장치Info
- Publication number
- KR870008317A KR870008317A KR1019870001400A KR870001400A KR870008317A KR 870008317 A KR870008317 A KR 870008317A KR 1019870001400 A KR1019870001400 A KR 1019870001400A KR 870001400 A KR870001400 A KR 870001400A KR 870008317 A KR870008317 A KR 870008317A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor memory
- semiconductor
- memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61-035467 | 1986-02-20 | ||
| JP61035467A JP2671899B2 (ja) | 1986-02-20 | 1986-02-20 | 半導体記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR870008317A true KR870008317A (ko) | 1987-09-25 |
| KR910002038B1 KR910002038B1 (ko) | 1991-03-30 |
Family
ID=12442584
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019870001400A KR910002038B1 (ko) | 1986-02-20 | 1987-02-19 | 반도체 기억장치 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2671899B2 (ko) |
| KR (1) | KR910002038B1 (ko) |
| DE (1) | DE3640363A1 (ko) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6329968A (ja) * | 1986-07-23 | 1988-02-08 | Nec Corp | 半導体メモリセル |
| JPH07120753B2 (ja) * | 1986-09-18 | 1995-12-20 | キヤノン株式会社 | 半導体メモリ装置及びその製造方法 |
| JP2606857B2 (ja) * | 1987-12-10 | 1997-05-07 | 株式会社日立製作所 | 半導体記憶装置の製造方法 |
| DE3902693C2 (de) * | 1988-01-30 | 1995-11-30 | Toshiba Kawasaki Kk | Mehrebenenverdrahtung für eine integrierte Halbleiterschaltungsanordnung und Verfahren zur Herstellung von Mehrebenenverdrahtungen für integrierte Halbleiterschaltungsanordnungen |
| JP2743391B2 (ja) * | 1988-08-25 | 1998-04-22 | ソニー株式会社 | 半導体メモリの製造方法 |
| JPH07109876B2 (ja) * | 1988-09-09 | 1995-11-22 | 株式会社東芝 | 半導体記憶装置の製造方法 |
| US5528062A (en) * | 1992-06-17 | 1996-06-18 | International Business Machines Corporation | High-density DRAM structure on soi |
| JPH06216338A (ja) * | 1992-11-27 | 1994-08-05 | Internatl Business Mach Corp <Ibm> | 半導体メモリセル及びその製造方法 |
| JP3959125B2 (ja) * | 1994-09-14 | 2007-08-15 | 株式会社東芝 | 半導体装置 |
| DE10256973B4 (de) | 2002-12-05 | 2006-09-28 | Infineon Technologies Ag | Integrierter Halbleiterspeicher mit einem an einem Steg ausgebildeten Auswahltransistor |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3128014A1 (de) * | 1981-07-15 | 1983-02-03 | Siemens AG, 1000 Berlin und 8000 München | Anordnung zur reduzierung der empfindlichkeit von integrierten halbleiterspeichern gegen alpha-strahlung |
| JPS60136366A (ja) * | 1983-12-26 | 1985-07-19 | Hitachi Ltd | 半導体集積回路装置 |
| JPS60189964A (ja) * | 1984-03-12 | 1985-09-27 | Hitachi Ltd | 半導体メモリ |
| ATE41267T1 (de) * | 1984-04-25 | 1989-03-15 | Siemens Ag | Ein-transistor-speicherzelle fuer hochintegrierte dynamische halbleiterspeicher und verfahren zu ihrer herstellung. |
| JPS6235668A (ja) * | 1985-08-09 | 1987-02-16 | Nec Corp | 半導体記憶装置 |
-
1986
- 1986-02-20 JP JP61035467A patent/JP2671899B2/ja not_active Expired - Lifetime
- 1986-11-26 DE DE19863640363 patent/DE3640363A1/de active Granted
-
1987
- 1987-02-19 KR KR1019870001400A patent/KR910002038B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR910002038B1 (ko) | 1991-03-30 |
| DE3640363C2 (ko) | 1992-02-13 |
| JP2671899B2 (ja) | 1997-11-05 |
| JPS62193273A (ja) | 1987-08-25 |
| DE3640363A1 (de) | 1987-08-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| G160 | Decision to publish patent application | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20030228 Year of fee payment: 13 |
|
| LAPS | Lapse due to unpaid annual fee |