KR870008314A - 반도체 기억장치 - Google Patents

반도체 기억장치 Download PDF

Info

Publication number
KR870008314A
KR870008314A KR870001199A KR870001199A KR870008314A KR 870008314 A KR870008314 A KR 870008314A KR 870001199 A KR870001199 A KR 870001199A KR 870001199 A KR870001199 A KR 870001199A KR 870008314 A KR870008314 A KR 870008314A
Authority
KR
South Korea
Prior art keywords
period
semiconductor memory
during
read
write cycle
Prior art date
Application number
KR870001199A
Other languages
English (en)
Other versions
KR910002499B1 (ko
Inventor
가즈히로 사와다
다카야스 사쿠라이
가즈다카 노가미
Original Assignee
와타리 스기이치로
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 와타리 스기이치로, 가부시키가이샤 도시바 filed Critical 와타리 스기이치로
Publication of KR870008314A publication Critical patent/KR870008314A/ko
Application granted granted Critical
Publication of KR910002499B1 publication Critical patent/KR910002499B1/ko

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)

Abstract

내용 없음

Description

반도체 기억장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 3 도는 본 발명이 이루어지기 이전에 본원의 발명자에 의해 안출된 독출/기록동작과 재충전동작을 절환시키는 회로도.
제 7 도는 본 발명에 관한 다이나믹형 RAM의 제어회로의 1실시예를 나타내는 회로도.

Claims (1)

  1. 독출 및 기록주기기간내에 기억데이터의 재충전동작을 행하도록 된 반도체기억장치에 있어서, 기록주기기간에는 소정의 어드레스에 대응하는 워드선을 기록주기기간 중 연속해서 활성화하는 제 1 수단(11,13-19,22-23)과, 독출주기기간에는 소정의 어드레스에 대응하는 워드선을 독출주기내의 일정한 기간동안만 활성화하는 수단(12,20,21)을 구비하여서 된 반도체 기억장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870001199A 1986-02-14 1987-02-13 반도체 기억장치 KR910002499B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP61030139A JPS62188095A (ja) 1986-02-14 1986-02-14 半導体記憶装置の制御回路
JP30139 1986-02-14

Publications (2)

Publication Number Publication Date
KR870008314A true KR870008314A (ko) 1987-09-25
KR910002499B1 KR910002499B1 (ko) 1991-04-23

Family

ID=12295431

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870001199A KR910002499B1 (ko) 1986-02-14 1987-02-13 반도체 기억장치

Country Status (5)

Country Link
US (1) US4984208A (ko)
EP (1) EP0237785B1 (ko)
JP (1) JPS62188095A (ko)
KR (1) KR910002499B1 (ko)
DE (1) DE3787187T2 (ko)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0715311A3 (en) * 1989-05-08 1996-09-18 Hitachi Maxell Solid state memory device
US5193072A (en) * 1990-12-21 1993-03-09 Vlsi Technology, Inc. Hidden refresh of a dynamic random access memory
JPH04372790A (ja) * 1991-06-21 1992-12-25 Sharp Corp 半導体記憶装置
EP0541060A3 (en) * 1991-11-05 1994-05-18 Fujitsu Ltd Dynamic random access memory having an improved operational stability
US5493530A (en) * 1993-08-26 1996-02-20 Paradigm Technology, Inc. Ram with pre-input register logic
US5369316A (en) * 1993-11-22 1994-11-29 United Microelectronics Corporation Advanced output buffer with reduced voltage swing at output terminal
US5748547A (en) * 1996-05-24 1998-05-05 Shau; Jeng-Jye High performance semiconductor memory devices having multiple dimension bit lines
JP3376998B2 (ja) 2000-03-08 2003-02-17 日本電気株式会社 半導体記憶装置
JP2001285775A (ja) * 2000-03-29 2001-10-12 Fuji Photo Film Co Ltd 画像処理装置および画像処理方法
JP3540243B2 (ja) 2000-04-24 2004-07-07 Ｎｅｃエレクトロニクス株式会社 半導体記憶装置
US6275437B1 (en) 2000-06-30 2001-08-14 Samsung Electronics Co., Ltd. Refresh-type memory with zero write recovery time and no maximum cycle time
JP3409059B2 (ja) * 2000-07-26 2003-05-19 Ｎｅｃエレクトロニクス株式会社 半導体記憶装置
US6944081B2 (en) 2000-08-31 2005-09-13 Nec Electronics Corporation Semiconductor storage and its refreshing method
KR100372249B1 (ko) * 2000-11-09 2003-02-19 삼성전자주식회사 분할 워드라인 액티베이션을 갖는 리프레쉬 타입 반도체메모리 장치
KR100455393B1 (ko) * 2002-08-12 2004-11-06 삼성전자주식회사 리프레시 플래그를 발생시키는 반도체 메모리 장치 및반도체 메모리 시스템.
KR100482368B1 (ko) * 2002-08-28 2005-04-13 삼성전자주식회사 고속동작에서의 리프레쉬 페일을 최소화하기 위한리프레쉬 회로를 갖는 리프레쉬 타입 반도체 메모리장치
US6735140B1 (en) * 2002-12-19 2004-05-11 Cypress Semiconductor Corporation Method and system for performing memory operations of a memory device
JP3765307B2 (ja) * 2003-05-15 2006-04-12 セイコーエプソン株式会社 半導体メモリ装置および電子機器
US6999368B2 (en) * 2003-05-27 2006-02-14 Matsushita Electric Industrial Co., Ltd. Semiconductor memory device and semiconductor integrated circuit device
US9064601B2 (en) * 2012-08-12 2015-06-23 Etron Technology, Inc. Method of providing write recovery protection in PSRAM and related device

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2543515A1 (de) * 1975-09-30 1977-04-07 Licentia Gmbh Verfahren zum regenerieren der speicherinhalte von speicherzellen in mos-speichern und mos-speicher zur durchfuehrung des verfahrens
JPS563496A (en) * 1979-06-18 1981-01-14 Hitachi Ltd Memory control circuit
US4328566A (en) * 1980-06-24 1982-05-04 Pitney Bowes Inc. Dynamic memory refresh system with additional refresh cycles
JPS5826396A (ja) * 1981-08-11 1983-02-16 Fujitsu Ltd ダイナミツク・ランダムアクセスメモリのリフレツシユ方式
JPS59111894A (ja) * 1982-12-17 1984-06-28 富士ゼロックス株式会社 製本機のブツククランプ構造
US4672583A (en) * 1983-06-15 1987-06-09 Nec Corporation Dynamic random access memory device provided with test circuit for internal refresh circuit
JPS615495A (ja) * 1984-05-31 1986-01-11 Toshiba Corp 半導体記憶装置
US4747082A (en) * 1984-11-28 1988-05-24 Hitachi Ltd. Semiconductor memory with automatic refresh means
JPS6129320A (ja) * 1985-03-11 1986-02-10 株式会社日立製作所 電気掃除機のじゆうたん用吸口
JPS621187A (ja) * 1985-06-26 1987-01-07 Toshiba Corp ダイナミツクメモリのアクセス制御方式
JPS6216294A (ja) * 1985-07-16 1987-01-24 Fuji Xerox Co Ltd メモリ装置
US4718041A (en) * 1986-01-09 1988-01-05 Texas Instruments Incorporated EEPROM memory having extended life
JPS62188096A (ja) * 1986-02-13 1987-08-17 Toshiba Corp 半導体記憶装置のリフレツシユ動作タイミング制御回路
JPS63155494A (ja) * 1986-12-19 1988-06-28 Fujitsu Ltd 擬似スタテイツクメモリ装置
JPS63166093A (ja) * 1986-12-26 1988-07-09 Toshiba Corp 半導体メモリの制御回路

Also Published As

Publication number Publication date
EP0237785A2 (en) 1987-09-23
JPH056279B2 (ko) 1993-01-26
DE3787187T2 (de) 1994-02-03
JPS62188095A (ja) 1987-08-17
EP0237785B1 (en) 1993-09-01
EP0237785A3 (en) 1990-07-18
DE3787187D1 (de) 1993-10-07
US4984208A (en) 1991-01-08
KR910002499B1 (ko) 1991-04-23

Similar Documents

Publication Publication Date Title
KR870008314A (ko) 반도체 기억장치
KR860004356A (ko) 데이타 처리장치
KR880011801A (ko) 반도체 기억장치
KR880008228A (ko) 표시장치
KR890008691A (ko) 데이타 프로세서 디바이스
KR890008830A (ko) 가상형 스태틱 반도체기억장치
KR920010638A (ko) 반도체 기억장치
KR920013455A (ko) 반도체 장치
KR910001771A (ko) 반도체 메모리 장치
KR890016677A (ko) 반도체메모리
KR880004376A (ko) 반도체 기억장치
KR880002112A (ko) 학습교재 작성장치
KR870008320A (ko) 상이형 메모리셀로 구성되는 반도체 메모리장치
KR860003551A (ko) 기 억 회 로
KR910008730A (ko) 반도체 기억장치
KR890004333A (ko) 반도체 메모리 장치
KR870010549A (ko) 반도체 기억장치
KR870004369A (ko) 정보 처리 장치에 있어서의 기억 영역 구조
ES2017074B3 (es) Dispositivo electronico formando memoria estable rapida.
KR860004349A (ko) 시이퀀스 제어기의 프로세스 입출력장치
KR900013396A (ko) Dram 콘트롤러
KR920022297A (ko) 다이너믹 랜덤 액세스 메모리 장치
KR910020742A (ko) 반도체기억 시스템
KR870008775A (ko) 엘리베이터의 제어장치
KR870005746A (ko) Cnc 공작기계

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20030401

Year of fee payment: 13

LAPS Lapse due to unpaid annual fee