KR870006655A - 반도체 기억장치 - Google Patents

반도체 기억장치

Info

Publication number
KR870006655A
KR870006655A KR1019860008117A KR860008117A KR870006655A KR 870006655 A KR870006655 A KR 870006655A KR 1019860008117 A KR1019860008117 A KR 1019860008117A KR 860008117 A KR860008117 A KR 860008117A KR 870006655 A KR870006655 A KR 870006655A
Authority
KR
South Korea
Prior art keywords
semiconductor memory
semiconductor
memory
Prior art date
Application number
KR1019860008117A
Other languages
English (en)
Other versions
KR900002886B1 (ko
Inventor
마사히로 시미즈
히로기 시마노
마사히데 이누이시
가쓰히로 쓰가모도
Original Assignee
미쓰비시 뎅기 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰비시 뎅기 가부시끼가이샤 filed Critical 미쓰비시 뎅기 가부시끼가이샤
Publication of KR870006655A publication Critical patent/KR870006655A/ko
Application granted granted Critical
Publication of KR900002886B1 publication Critical patent/KR900002886B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
KR1019860008117A 1985-12-20 1986-09-27 반도체 기억장치 KR900002886B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60-288206 1985-12-20
JP60288206A JPS62145859A (ja) 1985-12-20 1985-12-20 半導体記憶装置

Publications (2)

Publication Number Publication Date
KR870006655A true KR870006655A (ko) 1987-07-13
KR900002886B1 KR900002886B1 (ko) 1990-05-01

Family

ID=17727191

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860008117A KR900002886B1 (ko) 1985-12-20 1986-09-27 반도체 기억장치

Country Status (3)

Country Link
US (1) US5023682A (ko)
JP (1) JPS62145859A (ko)
KR (1) KR900002886B1 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01129440A (ja) * 1987-11-14 1989-05-22 Fujitsu Ltd 半導体装置
US5362662A (en) * 1989-08-11 1994-11-08 Ricoh Company, Ltd. Method for producing semiconductor memory device having a planar cell structure
US5308781A (en) * 1990-05-21 1994-05-03 Ricoh Company, Ltd. Semiconductor memory device
KR100291512B1 (ko) 1998-11-26 2001-11-05 박종섭 반도체 소자의 게이트 전극 형성방법
KR101523138B1 (ko) * 2013-09-04 2015-05-26 주식회사 동부하이텍 프로그램 가능한 메모리
US10396082B2 (en) 2017-07-05 2019-08-27 Micron Technology, Inc. Memory cells having a controlled-conductivity region

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57210665A (en) * 1981-06-19 1982-12-24 Mitsubishi Electric Corp Semiconductor memory device
JPS5858766A (ja) * 1981-10-05 1983-04-07 Hitachi Ltd 絶縁ゲ−ト型電界効果半導体装置及びその製造方法
US4641165A (en) * 1982-04-28 1987-02-03 Tokyo Shibaura Denki Kabushiki Kaisha Dynamic memory device with an RC circuit for inhibiting the effects of alpha particle radiation
JPS5994451A (ja) * 1983-04-25 1984-05-31 Hitachi Ltd 半導体装置
JPS6015964A (ja) * 1983-07-08 1985-01-26 Hitachi Ltd 半導体記憶装置
US4803539A (en) * 1985-03-29 1989-02-07 International Business Machines Corporation Dopant control of metal silicide formation
JPS6260256A (ja) * 1985-09-10 1987-03-16 Toshiba Corp 半導体記憶装置及びその製造方法

Also Published As

Publication number Publication date
JPS62145859A (ja) 1987-06-29
KR900002886B1 (ko) 1990-05-01
US5023682A (en) 1991-06-11

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Legal Events

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Payment date: 19970422

Year of fee payment: 8

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