KR20090024716A - 비휘발성 기억 소자, 비휘발성 기억 장치, 비휘발성 반도체장치, 및 비휘발성 기억 소자의 제조 방법 - Google Patents
비휘발성 기억 소자, 비휘발성 기억 장치, 비휘발성 반도체장치, 및 비휘발성 기억 소자의 제조 방법 Download PDFInfo
- Publication number
- KR20090024716A KR20090024716A KR1020087030938A KR20087030938A KR20090024716A KR 20090024716 A KR20090024716 A KR 20090024716A KR 1020087030938 A KR1020087030938 A KR 1020087030938A KR 20087030938 A KR20087030938 A KR 20087030938A KR 20090024716 A KR20090024716 A KR 20090024716A
- Authority
- KR
- South Korea
- Prior art keywords
- electrode
- nonvolatile memory
- tantalum oxide
- layer
- memory device
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 76
- 238000000034 method Methods 0.000 title claims description 46
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 230000008859 change Effects 0.000 claims abstract description 100
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims abstract description 61
- 229910001936 tantalum oxide Inorganic materials 0.000 claims abstract description 61
- 239000000758 substrate Substances 0.000 claims description 47
- 229910052760 oxygen Inorganic materials 0.000 claims description 44
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 43
- 239000001301 oxygen Substances 0.000 claims description 43
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 9
- 230000006870 function Effects 0.000 claims description 9
- 229910052718 tin Inorganic materials 0.000 claims description 9
- 239000012212 insulator Substances 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229910052741 iridium Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 229910010037 TiAlN Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 230000002441 reversible effect Effects 0.000 abstract description 4
- 229910003070 TaOx Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 263
- 238000010586 diagram Methods 0.000 description 38
- 239000010408 film Substances 0.000 description 24
- 239000000463 material Substances 0.000 description 22
- 238000003860 storage Methods 0.000 description 22
- 230000008569 process Effects 0.000 description 20
- 238000004458 analytical method Methods 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 11
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 9
- 239000010949 copper Substances 0.000 description 8
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 230000014759 maintenance of location Effects 0.000 description 7
- 230000001629 suppression Effects 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 229910052715 tantalum Inorganic materials 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- 229910000314 transition metal oxide Inorganic materials 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 238000012937 correction Methods 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 238000001552 radio frequency sputter deposition Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 229910002056 binary alloy Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000004092 self-diagnosis Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- -1 WO 3 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
- H10B63/22—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes of the metal-insulator-metal type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
- H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/32—Material having simple binary metal oxide structure
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/34—Material includes an oxide or a nitride
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/71—Three dimensional array
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/72—Array wherein the access device being a diode
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/79—Array wherein the access device being a transistor
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (15)
- 제 1 전극과,제 2 전극과,상기 제 1 전극과 상기 제 2 전극 사이에 위치하고, 상기 제 1 전극 및 상기 제 2 전극 사이에 인가되는 전기적 신호에 근거하여 가역적으로 저항값이 변화하는 저항 변화층을 구비하고,상기 저항 변화층은, 적어도 탄탈 산화물을 포함하고, 상기 탄탈 산화물을 TaOx로 나타낸 경우에, 0<x<2.5를 만족하도록 구성되는비휘발성 기억 소자.
- 제 1 항에 있어서,상기 저항 변화층을 구성하는 탄탈 산화물층은, Ta2O5보다 산소가 적은 조성을 갖고, 또한 절연체가 아닌 비휘발성 기억 소자.
- 제 1 항에 있어서,상기 저항 변화층은, 적어도 탄탈 산화물을 포함하고, 상기 탄탈 산화물을 TaOx로 나타낸 경우에, 0<x≤1.9를 만족하도록 구성되어 있는 비휘발성 기억 소자.
- 제 1 항에 있어서,상기 저항 변화층은, 적어도 탄탈 산화물을 포함하고, 상기 탄탈 산화물을 TaOx로 나타낸 경우에, 0.5≤x≤1.9를 만족하도록 구성되어 있는 비휘발성 기억 소자.
- 제 1 항에 있어서,상기 저항 변화층은, 적어도 탄탈 산화물을 포함하고, 상기 탄탈 산화물을 TaOx로 나타낸 경우에, 0.8≤x≤1.9를 만족하도록 구성되어 있는 비휘발성 기억 소자.
- 제 1 항에 있어서,상기 저항 변화층은, 상기 제 1 전극 및 상기 제 2 전극 사이에 인가되는 양극성(兩極性)의 전기적 신호에 의해 가역적으로 저항값이 변화하는 비휘발성 기억 소자.
- 제 1 항에 있어서,상기 제 1 전극 및 상기 제 2 전극의 적어도 한쪽은, Pt, Ir, Cu, Au, Ag, TiN 및 TiAlN의 적어도 1종 이상으로 구성되어 있는 비휘발성 기억 소자.
- 반도체 기판과, 상기 반도체 기판 위에 서로 평행하게 형성된 복수의 제 1 전극 배선과, 상기 복수의 제 1 전극 배선의 위쪽에 상기 반도체 기판의 주면에 평행한 면내에서 서로 평행하고, 또한 상기 복수의 제 1 전극 배선에 입체 교차하도록 형성된 복수의 제 2 전극 배선과, 상기 복수의 제 1 전극 배선과 상기 복수의 제 2 전극 배선의 입체 교차점에 대응하여 마련된 비휘발성 기억 소자를 구비하는 메모리 어레이를 구비하고,상기 비휘발성 기억 소자의 각각은, 상기 제 1 전극 배선과 상기 제 2 전극 배선 사이에 위치하고, 상기 제 1 전극 배선 및 상기 제 2 전극 배선 사이에 인가되는 전기적 신호에 근거하여 가역적으로 저항값이 변화하는 저항 변화층을 구비하고,상기 저항 변화층은, 적어도 탄탈 산화물을 포함하고, 상기 탄탈 산화물을 TaOx로 나타낸 경우에, 0<x<2.5를 만족하도록 구성되는비휘발성 기억 장치.
- 제 8 항에 있어서,상기 비휘발성 기억 소자의 각각은, 상기 제 1 전극 배선과 접속된 제 1 전극과, 상기 제 2 전극 배선과 접속된 제 2 전극과, 상기 제 1 전극과 상기 제 2 전극 사이에 위치하는 상기 저항 변화층을 구비하고,상기 저항 변화층은, 상기 제 1 전극 배선 및 상기 제 2 전극 배선에 인가되고, 또한 상기 제 1 전극 및 상기 제 2 전극 사이에 인가되는 전기적 신호에 근거하여 가역적으로 저항값이 변화하는비휘발성 기억 장치.
- 제 9 항에 있어서,상기 비휘발성 기억 소자의 각각은, 상기 제 1 전극과 상기 제 2 전극 사이에 전류 억제 소자를 구비하고 있고,상기 전류 억제 소자는 상기 저항 변화층과 전기적으로 접속되어 있는 비휘발성 기억 장치.
- 제 8 항 내지 제 10 항 중 어느 한 항에 있어서,상기 메모리 어레이는, 복수 적층되어 이루어지는 다층화 메모리 어레이를 구비하는 비휘발성 기억 장치.
- 반도체 기판과, 상기 반도체 기판 상에 형성된, 서로 교차하도록 배열된 복수의 워드선 및 복수의 비트선, 상기 복수의 워드선 및 복수의 비트선의 교점에 대응하여 각각 마련된 복수의 트랜지스터 및 상기 복수의 트랜지스터에 1대1로 대응하여 마련된 복수의 비휘발성 기억 소자를 구비하고,상기 비휘발성 기억 소자의 각각은, 제 1 전극과, 제 2 전극과, 상기 제 1 전극과 상기 제 2 전극 사이에 위치하고, 상기 비트선과 상기 워드선 사이에 인가되고, 또한, 대응하여 마련되어 있는 상기 트랜지스터를 거쳐 상기 제 1 전극 및 상기 제 2 전극 사이에 인가되는 전기적 신호에 근거하여 가역적으로 저항값이 변화하는 저항 변화층을 구비하고,상기 저항 변화층은, 적어도 탄탈 산화물을 포함하고, 상기 탄탈 산화물을 TaOx로 나타낸 경우에, 0<x<2.5를 만족하도록 구성되어 있는비휘발성 기억 장치.
- 반도체 기판과, 상기 반도체 기판 상에 형성된, 소정의 연산을 실행하는 논리 회로 및 프로그램 기능을 갖는 비휘발성 기억 소자를 구비하고,상기 비휘발성 기억 소자는, 제 1 전극과, 제 2 전극과, 상기 제 1 전극과 상기 제 2 전극 사이에 위치하고, 양 전극 사이의 전압에 근거하여 가역적으로 저항값이 변화하는 저항 변화층을 구비하고,상기 저항 변화층은, 적어도 탄탈 산화물을 포함하고, 상기 탄탈 산화물을 TaOx로 나타낸 경우에, 0<x<2.5를 만족하도록 구성되어 있는비휘발성 반도체 장치.
- 청구항 13에 기재된 비휘발성 반도체 장치와,청구항 8, 9 및 12 중 어느 한 항에 기재된 비휘발성 기억 장치를 구비하는 비휘발성 반도체 장치.
- 제 1 전극과, 제 2 전극과, 상기 제 1 전극과 상기 제 2 전극 사이에 위치하고, 상기 제 1 전극 및 상기 제 2 전극 사이에 인가되는 전기적 신호에 근거하여 가역적으로 저항값이 변화하는 저항 변화층을 구비하고, 상기 저항 변화층은, 적어 도 탄탈 산화물을 포함하고, 상기 탄탈 산화물을 TaOx로 나타낸 경우에, 0<x<2.5를 만족하도록 구성되는 비휘발성 기억 소자의 제조 방법으로서,상기 탄탈 산화물을 스퍼터법에 의해 형성하는 비휘발성 기억 소자의 제조 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006311910 | 2006-11-17 | ||
JPJP-P-2006-311910 | 2006-11-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20090024716A true KR20090024716A (ko) | 2009-03-09 |
KR101012896B1 KR101012896B1 (ko) | 2011-02-08 |
Family
ID=39401510
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020087030938A KR101012896B1 (ko) | 2006-11-17 | 2007-10-24 | 비휘발성 기억 소자, 비휘발성 기억 장치, 비휘발성 반도체장치, 및 비휘발성 기억 소자의 제조 방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9236381B2 (ko) |
EP (1) | EP2077580B1 (ko) |
JP (3) | JP4527170B2 (ko) |
KR (1) | KR101012896B1 (ko) |
CN (1) | CN101636840B (ko) |
WO (1) | WO2008059701A1 (ko) |
Families Citing this family (54)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8058636B2 (en) | 2007-03-29 | 2011-11-15 | Panasonic Corporation | Variable resistance nonvolatile memory apparatus |
US7948789B2 (en) * | 2007-04-09 | 2011-05-24 | Panasonic Corporation | Resistance variable element, nonvolatile switching element, and resistance variable memory apparatus |
JP4253038B2 (ja) | 2007-06-05 | 2009-04-08 | パナソニック株式会社 | 不揮発性記憶素子およびその製造方法、並びにその不揮発性記憶素子を用いた不揮発性半導体装置 |
JP5012312B2 (ja) * | 2007-08-15 | 2012-08-29 | ソニー株式会社 | 記憶装置の駆動方法 |
WO2009041041A1 (ja) * | 2007-09-28 | 2009-04-02 | Panasonic Corporation | 不揮発性記憶素子及び不揮発性半導体記憶装置、並びにそれらの読み出し方法及び書き込み方法 |
CN101828262B (zh) * | 2007-10-15 | 2012-06-06 | 松下电器产业株式会社 | 非易失性存储元件和使用该非易失性存储元件的非易失性半导体装置 |
KR101490429B1 (ko) * | 2008-03-11 | 2015-02-11 | 삼성전자주식회사 | 저항 메모리 소자 및 그 형성 방법 |
US8094485B2 (en) | 2008-05-22 | 2012-01-10 | Panasonic Corporation | Variable resistance nonvolatile storage device with oxygen-deficient oxide layer and asymmetric substrate bias effect |
JP4460646B2 (ja) * | 2008-06-03 | 2010-05-12 | パナソニック株式会社 | 不揮発性記憶素子、不揮発性記憶装置、および不揮発性半導体装置 |
JP4469023B2 (ja) * | 2008-07-11 | 2010-05-26 | パナソニック株式会社 | 不揮発性記憶素子およびその製造方法、並びにその不揮発性記憶素子を用いた不揮発性半導体装置 |
JP4733233B2 (ja) * | 2008-09-19 | 2011-07-27 | パナソニック株式会社 | 電流抑制素子の製造方法 |
JP4531863B2 (ja) * | 2008-11-19 | 2010-08-25 | パナソニック株式会社 | 不揮発性記憶素子および不揮発性記憶装置 |
JP4897089B2 (ja) * | 2008-12-03 | 2012-03-14 | パナソニック株式会社 | 抵抗変化型不揮発性記憶装置及びその製造方法 |
CN102227809A (zh) * | 2008-12-04 | 2011-10-26 | 松下电器产业株式会社 | 非易失性存储元件 |
US8471235B2 (en) * | 2008-12-05 | 2013-06-25 | Panasonic Corporation | Nonvolatile memory element having a resistance variable layer and manufacturing method thereof |
WO2010067585A1 (ja) * | 2008-12-10 | 2010-06-17 | パナソニック株式会社 | 抵抗変化素子およびそれを用いた不揮発性半導体記憶装置 |
KR101108193B1 (ko) * | 2008-12-16 | 2012-01-31 | 한국전자통신연구원 | 상변화층을 포함하는 비휘발성 프로그래머블 소자 및 그 제조 방법 |
WO2010087211A1 (ja) | 2009-02-02 | 2010-08-05 | パナソニック株式会社 | 不揮発性記憶素子、不揮発性記憶装置、不揮発性半導体装置、および不揮発性記憶素子の製造方法 |
CN102084429B (zh) * | 2009-04-10 | 2013-12-25 | 松下电器产业株式会社 | 非易失性存储元件的驱动方法和非易失性存储装置 |
CN102077296B (zh) | 2009-06-08 | 2014-04-02 | 松下电器产业株式会社 | 电阻变化型非易失性存储元件的成形方法及电阻变化型非易失性存储装置 |
JP4705998B2 (ja) | 2009-06-08 | 2011-06-22 | パナソニック株式会社 | 抵抗変化型不揮発性記憶素子の書き込み方法および抵抗変化型不揮発性記憶装置 |
US8610102B2 (en) | 2009-06-18 | 2013-12-17 | Panasonic Corporation | Nonvolatile memory device and manufacturing method thereof |
US8675387B2 (en) | 2009-07-28 | 2014-03-18 | Panasonic Corporation | Variable resistance nonvolatile memory device and programming method for same |
JP5036909B2 (ja) * | 2009-12-18 | 2012-09-26 | パナソニック株式会社 | 抵抗変化型素子及びその製造方法 |
JP5039857B2 (ja) | 2009-12-28 | 2012-10-03 | パナソニック株式会社 | 記憶装置およびその製造方法 |
JP5406314B2 (ja) | 2010-01-25 | 2014-02-05 | パナソニック株式会社 | 不揮発性半導体記憶素子の製造方法および不揮発性半導体記憶装置の製造方法 |
KR20110101983A (ko) * | 2010-03-10 | 2011-09-16 | 삼성전자주식회사 | 바이폴라 메모리셀 및 이를 포함하는 메모리소자 |
US8437173B2 (en) * | 2010-03-19 | 2013-05-07 | Panasonic Corporation | Nonvolatile memory element, manufacturing method thereof, design support method therefor, and nonvolatile memory device |
US8593853B2 (en) | 2010-03-30 | 2013-11-26 | Panasonic Corporation | Nonvolatile storage device and method for writing into the same |
CN102918647B (zh) | 2010-04-21 | 2015-04-01 | 松下电器产业株式会社 | 非易失性存储装置及其制造方法 |
WO2012001978A1 (ja) | 2010-07-01 | 2012-01-05 | パナソニック株式会社 | 不揮発性記憶素子及びその製造方法 |
JP2012069217A (ja) * | 2010-09-24 | 2012-04-05 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP5241962B2 (ja) | 2010-10-08 | 2013-07-17 | パナソニック株式会社 | 不揮発性記憶素子およびその製造方法 |
US8619460B2 (en) | 2010-10-29 | 2013-12-31 | Panasonic Corporation | Nonvolatile memory device and method for programming nonvolatile memory element |
WO2012073503A1 (ja) | 2010-12-03 | 2012-06-07 | パナソニック株式会社 | 不揮発性記憶素子ならびに不揮発性記憶装置及びそれらの製造方法 |
WO2012105232A1 (ja) | 2011-02-02 | 2012-08-09 | パナソニック株式会社 | 不揮発性記憶素子のデータ読み出し方法及び不揮発性記憶装置 |
US9142767B2 (en) * | 2011-09-16 | 2015-09-22 | Micron Technology, Inc. | Resistive memory cell including integrated select device and storage element |
US9349445B2 (en) | 2011-09-16 | 2016-05-24 | Micron Technology, Inc. | Select devices for memory cell applications |
JP5282176B1 (ja) | 2011-10-12 | 2013-09-04 | パナソニック株式会社 | 不揮発性半導体記憶装置およびその製造方法 |
WO2013125172A1 (ja) | 2012-02-20 | 2013-08-29 | パナソニック株式会社 | 不揮発性記憶装置およびその製造方法 |
WO2013136731A1 (ja) | 2012-03-15 | 2013-09-19 | パナソニック株式会社 | 抵抗変化型不揮発性記憶装置 |
WO2013183242A1 (ja) * | 2012-06-04 | 2013-12-12 | パナソニック株式会社 | 不揮発性半導体装置を駆動する方法 |
JP5966150B2 (ja) | 2012-07-31 | 2016-08-10 | パナソニックIpマネジメント株式会社 | 不揮発性記憶素子の駆動方法及び不揮発性記憶装置 |
JP2014103326A (ja) | 2012-11-21 | 2014-06-05 | Panasonic Corp | 不揮発性記憶素子およびその製造方法 |
CN103066206B (zh) * | 2012-12-25 | 2016-03-23 | 清华大学 | 一种阻变式存储单元及其形成方法 |
JP6201151B2 (ja) | 2013-03-18 | 2017-09-27 | パナソニックIpマネジメント株式会社 | 不揮発性記憶装置及びその製造方法 |
US9246087B1 (en) * | 2014-11-24 | 2016-01-26 | Intermolecular, Inc. | Electron barrier height controlled interfaces of resistive switching layers in resistive random access memory cells |
JP6617924B2 (ja) * | 2015-06-18 | 2019-12-11 | パナソニックIpマネジメント株式会社 | 耐タンパ性を有する不揮発性メモリ装置および集積回路カード、不揮発性メモリ装置の認証方法、個体識別情報生成方法 |
JP6587188B2 (ja) * | 2015-06-18 | 2019-10-09 | パナソニックIpマネジメント株式会社 | 乱数処理装置、集積回路カード、および乱数処理方法 |
CN105702287A (zh) * | 2016-01-05 | 2016-06-22 | 哈尔滨工业大学深圳研究生院 | 基于多比特阻态阻变器件的rram阵列读写方法及*** |
WO2018057022A1 (en) * | 2016-09-25 | 2018-03-29 | Intel Corporation | Barriers for metal filament memory devices |
US10262715B2 (en) * | 2017-03-27 | 2019-04-16 | Micron Technology, Inc. | Multiple plate line architecture for multideck memory array |
US11442695B2 (en) * | 2017-12-28 | 2022-09-13 | Tdk Corporation | Product-sum operation device, neuromorphic device, and method for determining malfunction in product-sum operation device |
US10734447B2 (en) * | 2018-10-22 | 2020-08-04 | International Business Machines Corporation | Field-effect transistor unit cells for neural networks with differential weights |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2964964B2 (ja) | 1989-03-23 | 1999-10-18 | セイコーエプソン株式会社 | 液晶表示装置の製造方法 |
JPH07263647A (ja) | 1994-02-04 | 1995-10-13 | Canon Inc | 電子回路装置 |
CN1191635C (zh) * | 1999-02-17 | 2005-03-02 | 国际商业机器公司 | 用于存储信息的微电子器件及其方法 |
JP3685670B2 (ja) | 1999-12-03 | 2005-08-24 | 松下電器産業株式会社 | Dcスパッタリング装置 |
DE10207300B4 (de) | 2002-02-21 | 2004-01-29 | Infineon Technologies Ag | Integrierter Festwertspeicher, Verfahren zum Betreiben eines solchen Festwertspeichers sowie Herstellungsverfahren |
US6965137B2 (en) * | 2002-08-02 | 2005-11-15 | Unity Semiconductor Corporation | Multi-layer conductive memory device |
US6917539B2 (en) * | 2002-08-02 | 2005-07-12 | Unity Semiconductor Corporation | High-density NVRAM |
JP2004228355A (ja) | 2003-01-23 | 2004-08-12 | Seiko Epson Corp | 絶縁膜基板の製造方法、絶縁膜基板の製造装置及び絶縁膜基板並びに電気光学装置の製造方法及び電気光学装置 |
JP2004342277A (ja) * | 2003-05-19 | 2004-12-02 | Sharp Corp | 半導体記憶装置、その駆動方法及び携帯電子機器 |
US6927120B2 (en) | 2003-05-21 | 2005-08-09 | Sharp Laboratories Of America, Inc. | Method for forming an asymmetric crystalline structure memory cell |
KR100773537B1 (ko) | 2003-06-03 | 2007-11-07 | 삼성전자주식회사 | 한 개의 스위칭 소자와 한 개의 저항체를 포함하는비휘발성 메모리 장치 및 그 제조 방법 |
JP4701427B2 (ja) | 2004-04-28 | 2011-06-15 | パナソニック株式会社 | スイッチング素子およびそれを用いたアレイ型機能素子 |
US6972985B2 (en) | 2004-05-03 | 2005-12-06 | Unity Semiconductor Corporation | Memory element having islands |
JP2005347468A (ja) * | 2004-06-02 | 2005-12-15 | Matsushita Electric Ind Co Ltd | 不揮発性メモリ |
US8227893B2 (en) | 2004-06-23 | 2012-07-24 | Nec Corporation | Semiconductor device with capacitor element |
KR100609699B1 (ko) | 2004-07-15 | 2006-08-08 | 한국전자통신연구원 | 급격한 금속-절연체 전이 반도체 물질을 이용한 2단자반도체 소자 및 그 제조 방법 |
JP4830275B2 (ja) | 2004-07-22 | 2011-12-07 | ソニー株式会社 | 記憶素子 |
KR100693409B1 (ko) | 2005-01-14 | 2007-03-12 | 광주과학기술원 | 산화막의 저항변화를 이용한 비휘발성 기억소자 및 그제조방법 |
JP4546842B2 (ja) | 2005-01-20 | 2010-09-22 | シャープ株式会社 | 不揮発性半導体記憶装置及びその制御方法 |
JP2006203098A (ja) * | 2005-01-24 | 2006-08-03 | Sharp Corp | 不揮発性半導体記憶装置 |
JP5502320B2 (ja) | 2006-03-30 | 2014-05-28 | 日本電気株式会社 | スイッチング素子およびスイッチング素子の製造方法 |
JP2008108807A (ja) | 2006-10-24 | 2008-05-08 | Epson Imaging Devices Corp | 非線形素子、非線形素子の製造方法、および電気光学装置 |
JP2008205191A (ja) * | 2007-02-20 | 2008-09-04 | Toshiba Corp | 不揮発性半導体メモリ素子および不揮発性半導体メモリ装置 |
-
2007
- 2007-10-24 EP EP07830485A patent/EP2077580B1/en active Active
- 2007-10-24 US US12/307,032 patent/US9236381B2/en active Active
- 2007-10-24 WO PCT/JP2007/070751 patent/WO2008059701A1/ja active Application Filing
- 2007-10-24 KR KR1020087030938A patent/KR101012896B1/ko active IP Right Grant
- 2007-10-24 JP JP2008544102A patent/JP4527170B2/ja active Active
- 2007-10-24 CN CN2007800251559A patent/CN101636840B/zh active Active
-
2008
- 2008-09-16 JP JP2008236577A patent/JP5207894B2/ja active Active
-
2012
- 2012-12-28 JP JP2012288753A patent/JP5589054B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
WO2008059701A9 (ja) | 2009-09-11 |
EP2077580A4 (en) | 2009-11-11 |
KR101012896B1 (ko) | 2011-02-08 |
JP5207894B2 (ja) | 2013-06-12 |
CN101636840A (zh) | 2010-01-27 |
EP2077580B1 (en) | 2011-11-30 |
WO2008059701A1 (ja) | 2008-05-22 |
JP4527170B2 (ja) | 2010-08-18 |
JP5589054B2 (ja) | 2014-09-10 |
JP2013102181A (ja) | 2013-05-23 |
CN101636840B (zh) | 2011-05-25 |
US20090224224A1 (en) | 2009-09-10 |
US9236381B2 (en) | 2016-01-12 |
JPWO2008059701A1 (ja) | 2010-02-25 |
JP2009033188A (ja) | 2009-02-12 |
EP2077580A1 (en) | 2009-07-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101012896B1 (ko) | 비휘발성 기억 소자, 비휘발성 기억 장치, 비휘발성 반도체장치, 및 비휘발성 기억 소자의 제조 방법 | |
CN101542730B (zh) | 非易失性存储元件和其制造方法、以及使用了该非易失性存储元件的非易失性半导体装置 | |
JP4252110B2 (ja) | 不揮発性記憶装置、不揮発性記憶素子および不揮発性記憶素子アレイ | |
US8264865B2 (en) | Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor device incorporating nonvolatile memory element | |
JP4555397B2 (ja) | 抵抗変化型不揮発性記憶装置 | |
JP4299882B2 (ja) | 不揮発性記憶素子およびその製造方法、並びにその不揮発性記憶素子を用いた不揮発性半導体装置 | |
US8179713B2 (en) | Nonvolatile memory element, nonvolatile memory device, and nonvolatile semiconductor device | |
JP2010287582A (ja) | 不揮発性記憶素子およびその製造方法、並びにその不揮発性記憶素子を用いた不揮発性半導体装置 | |
JP2009135370A (ja) | 不揮発性記憶素子およびその製造方法、並びにその不揮発性記憶素子を用いた不揮発性半導体装置 | |
JP2010021381A (ja) | 不揮発性記憶素子およびその製造方法、並びにその不揮発性記憶素子を用いた不揮発性半導体装置 | |
JPWO2011052239A1 (ja) | 抵抗変化型不揮発性記憶装置およびメモリセルの形成方法 | |
JPWO2010087211A1 (ja) | 不揮発性記憶素子、不揮発性記憶装置、不揮発性半導体装置、および不揮発性記憶素子の製造方法 | |
JP2011044443A (ja) | 不揮発性記憶素子およびその製造方法、並びにその不揮発性記憶素子を用いた不揮発性半導体装置 | |
JP2009266924A (ja) | 不揮発性記憶素子およびその製造方法、並びにその不揮発性記憶素子を用いた不揮発性半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20140103 Year of fee payment: 4 |
|
FPAY | Annual fee payment |
Payment date: 20150105 Year of fee payment: 5 |
|
FPAY | Annual fee payment |
Payment date: 20151217 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20161220 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20171219 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20181219 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20191219 Year of fee payment: 10 |