JP4733233B2 - 電流抑制素子の製造方法 - Google Patents
電流抑制素子の製造方法 Download PDFInfo
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 237
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 18
- 238000004544 sputter deposition Methods 0.000 description 17
- 239000004065 semiconductor Substances 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 14
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 229910004205 SiNX Inorganic materials 0.000 description 6
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
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- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
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- NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 description 1
- 229910019794 NbN Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
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- 229910010037 TiAlN Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
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- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
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- 238000005121 nitriding Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
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Description
(ln(Joff(Cexp(αd)exp(βx))-1)/γ)2
−(ln(Jmin(Cexp(αd)exp(βx))-1)/γ)2/2≧0 ・・(2)
但し、
C=7.46×10-2、α=−6.25×10-1、β=−11.7、γ=9.76
ここで、上記式(1)の左辺は、電流抑制素子に流れる電流の電流密度を10000A/cm 2 とするために電流抑制素子の両端にかけるべき電圧を表している。よって、上記式(1)の不等式は、電流抑制素子に流れる電流の電流密度を10000A/cm 2 とするために電流抑制素子の両端にかけるべき電圧がその最大値V 0 以下となる条件、言い換えると、電流抑制素子の両端にかける電圧が最大値V 0 以下であっても、10000A/cm 2 の電流密度の電流が電流抑制素子に流れることを保証する条件(膜厚dと窒素組成比xが満たすべき関係)を示している。なお、10000A/cm 2 は、この電流抑制素子と直列に接続される抵抗変化素子へのデータの書き込み時に必要な電流の最低の電流密度(J min (A/cm 2 ))の一例である。
一方、上記式(2)の左辺の第1項は、電流抑制素子に流れる電流の電流密度を1000A/cm 2 とするために電流抑制素子の両端にかけるべき電圧を表しており、式(2)の左辺の第2項は、電流抑制素子に流れる電流の電流密度を10000A/cm 2 とするために電流抑制素子の両端にかけるべき電圧の1/2を表している。ここで、1000A/cm 2 は、非選択の(遮断状態にある)電流抑制素子に流れる電流として許容できる最大の電流密度(J off (A/cm 2 ))の一例であり、選択された(導通状態にある)電流抑制素子に流れる電流(10000A/cm 2 )の1/10としている。なお、クロスポイント型の記憶装置では、非選択の電流抑制素子の両端にかかる電圧は、選択された電流抑制素子の両端にかかる電圧の1/2とすること好ましいことが分かっている。よって、上記式(2)の不等式は、非選択状態にある電流抑制素子に流れる電流の電流密度が選択状態にある電流抑制素子に流れる電流の電流密度の1/10以下となることを保証する条件(膜厚dと窒素組成比xが満たすべき関係)を示している。
ここで、γは電流抑制層であるSiNxの窒素組成比xや、SiNxの膜厚には依存しない定数であり、また、Aは電流抑制素子の両端に加えられる電圧Vに依存しない定数である。
ここで、αは電流抑制層であるSiNxの窒素組成比xや、SiNxの膜厚dには依存しない定数であり、また、Bは電流抑制素子の両端に加えられる電圧Vや、SiNxの膜厚dには依存しない定数である。
但し、C、α、β、γは定数
(ln(30000(Cexp(αd)exp(βx))-1)/γ)2≦V0 ・・(9)
(ln(50000(Cexp(αd)exp(βx))-1)/γ)2≦V0 ・・(10)
(ln(1000(Cexp(αd)exp(βx))-1)/γ)2
−(ln(10000(Cexp(αd)exp(βx))-1)/γ)2/2≧0 ・・(11)
(ln(1000(Cexp(αd)exp(βx))-1)/γ)2
−(ln(30000(Cexp(αd)exp(βx))-1)/γ)2/2≧0 ・・(12)
(ln(1000(Cexp(αd)exp(βx))-1)/γ)2
−(ln(50000(Cexp(αd)exp(βx))-1)/γ)2/2≧0 ・・(13)
(ln(Joff(Cexp(αd)exp(βx))-1)/γ)2
−(ln(Jmin(Cexp(αd)exp(βx))-1)/γ)2/2≧0 ・・(15)
但し、
C=7.46×10-2、α=−6.25×10-1、β=−11.7、γ=9.76
なお、決定ステップS12では、例えば、膜厚dとして、5nm以上、かつ、窒素組成比xとして、0<x≦0.85を満足する膜厚dおよび窒素組成比xを決定する。
2 電流抑制素子
3 記憶素子
4 ビット線デコーダ
5 読み出し回路
6、7 ワード線デコーダ
11 立体交差部
20 記憶素子アレイ
21 記憶装置
30 基板
31 第2の電極
32 第1の電極
33 電流抑制層
WL0〜WL3 ワード線
BL0〜BL3 ビット線
Claims (3)
- 第1の電極と、第2の電極と、前記第1の電極および前記第2の電極間に挟まれたSiNxにより構成される電流抑制層とを備え、極性が正および負の電気パルスの印加時に流れる電流を抑制する電流抑制素子の製造方法であって、
前記電流抑制層の膜厚dおよび窒素組成比xを決定する設計ステップと、
前記設計ステップで決定された膜厚dおよび窒素組成比xに従って前記電流抑制素子を製造する製造ステップとを含み、
前記設計ステップは、
前記電流抑制素子に流すべき電流の最低の電流密度Jmin(A/cm2)、前記電流抑制素子が遮断状態にあるときに前記電流抑制素子に流れる電流として許容できる最大の電流密度Joff(A/cm2)、および、前記電流抑制素子の両端にかかる電圧の最大値V0(ボルト)を取得する取得ステップと、
前記取得ステップで取得された前記電流密度Jmin、前記電流密度Joff、および、前記V0を用いて、下記の式(1)および式(2)を満足する範囲にある膜厚dおよび窒素組成比xを決定する決定ステップとを含む電流抑制素子の製造方法。
(ln(Jmin(Cexp(αd)exp(βx))-1)/γ)2≦V0 ・・(1)
(ln(Joff(Cexp(αd)exp(βx))-1)/γ)2
−(ln(Jmin(Cexp(αd)exp(βx))-1)/γ)2/2≧0 ・・(2)
但し、
C=7.46×10-2、α=−6.25×10-1、β=−11.7、γ=9.76 - 前記決定ステップでは、前記膜厚dとして、5nm以上、かつ、前記窒素組成比xとして、0<x≦0.85を満足する膜厚dおよび窒素組成比xを決定する請求項1に記載の電流抑制素子の製造方法。
- 前記製造ステップは、
基板上に、窒化タンタルあるいはα−タングステンを含む前記第1の電極を形成するステップと、
前記第1の電極上に、前記設計ステップで決定された膜厚dおよび窒素組成比xをもつSiNx膜を形成するステップと、
前記SiNx膜上に、窒化タンタルあるいはα−タングステンを含む前記第2の電極を形成するステップとを含む請求項1または2記載の電流抑制素子の製造方法。
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