KR20080111424A - Rf 전극 - Google Patents
Rf 전극 Download PDFInfo
- Publication number
- KR20080111424A KR20080111424A KR1020080113999A KR20080113999A KR20080111424A KR 20080111424 A KR20080111424 A KR 20080111424A KR 1020080113999 A KR1020080113999 A KR 1020080113999A KR 20080113999 A KR20080113999 A KR 20080113999A KR 20080111424 A KR20080111424 A KR 20080111424A
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- South Korea
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- 238000000034 method Methods 0.000 claims abstract description 66
- 238000012545 processing Methods 0.000 claims description 88
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 26
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 13
- 229910052759 nickel Inorganic materials 0.000 claims description 13
- 239000000758 substrate Substances 0.000 abstract description 147
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- 238000005108 dry cleaning Methods 0.000 abstract description 3
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- 238000012546 transfer Methods 0.000 description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 24
- 239000000463 material Substances 0.000 description 22
- 238000010926 purge Methods 0.000 description 21
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- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 10
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
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- 125000004429 atom Chemical group 0.000 description 3
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
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- 229910052734 helium Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
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- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
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- 238000012163 sequencing technique Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
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- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
- C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
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- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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Abstract
Description
Claims (14)
- 플라즈마 처리 챔버용 전극으로서, 상기 전극은,가스 주입구가 관통 형성된 니켈 도금 몸체를 포함하며, 상기 몸체는:하부 디스크 표면, 상부 디스크 표면 및 외부 디스크 직경을 구비하는 상부 부분; 및상기 하부 디스크 표면으로부터 하부 몸체 표면으로 연장하는 연장 부분 - 상기 연장 부분은 상기 외부 디스크 직경의 직경보다 작은 직경을 갖는 외부 몸체 직경을 구비하며, 상기 연장 부분은 상기 하부 디스크 표면으로부터 상기 연장 부분으로 연장하는 원뿔형 내부 직경 벽을 구비하며, 상기 내부 직경 벽은 상기 상부 부분을 향하여 테이퍼링되며, 상기 가스 주입구는 상기 내부 직경 벽에 의해 정의되는 공동에 개방됨 -을 포함하는 플라즈마 처리 챔버용 전극.
- 제 1 항에 있어서,상기 내부 직경 벽은 적어도 1:1의 경사를 가지는 것을 특징으로 하는 플라즈마 처리 챔버용 전극.
- 제 1 항에 있어서,상기 내부 직경 벽은 적어도 5:1의 경사를 가지는 것을 특징으로 하는 플라 즈마 처리 챔버용 전극.
- 제 1 항에 있어서,상기 내부 직경 벽은 1:1 내지 20:1의 경사를 가지는 것을 특징으로 하는 플라즈마 처리 챔버용 전극.
- 제 1 항에 있어서,상기 가스 주입구는 상기 상부 부분의 상기 외부 디스크 직경으로부터 상기 내부 직경 벽에 의해 정의된 공동으로 연장하는 것을 특징으로 하는 플라즈마 처리 챔버용 전극.
- 제 1 항에 있어서,상기 상부 부분의 상기 하부 표면상에 형성된 O-링 마개를 더 포함하는 것을 특징으로 하는 플라즈마 처리 챔버용 전극.
- 제 1 항에 있어서,상기 상부 부분은 RF 전력 소스에 결합되도록 구성된 것을 특징으로 하는 플라즈마 처리 챔버용 전극.
- 플라즈마 처리 챔버용 전극으로서, 상기 전극은,가스 주입구가 관통 형성된 몸체를 포함하며, 상기 몸체는:하부 디스크 표면, 상부 디스크 표면 및 외부 디스크 직경을 구비하는 상부 부분 - 상기 상부 부분은 RF 전력 소스에 결합되도록 구성됨 -; 및상기 하부 디스크 표면으로부터 하부 몸체 표면으로 연장하는 연장 부분 - 상기 연장 부분은 외부 디스크 직경의 직경보다 작은 직경을 갖는 외부 몸체 직경을 구비하며, 상기 연장 부분은 상기 하부 디스크 표면으로부터 상기 연장 부분으로 연장하는 원뿔형 내부 직경 벽을 구비하며, 상기 내부 직경 벽은 상기 상부 부분을 향하여 테이퍼링되며, 상기 가스 주입구는 상기 내부 직경 벽에 의해 정의되는 공동에 개방되며, 적어도 상기 내부 직경 벽은 니켈 도금됨 -을 포함하는 플라즈마 처리 챔버용 전극.
- 제 8 항에 있어서,상기 내부 직경 벽은 적어도 1:1의 경사를 가지는 것을 특징으로 하는 플라즈마 처리 챔버용 전극.
- 제 8 항에 있어서,상기 내부 직경 벽은 적어도 5:1의 경사를 가지는 것을 특징으로 하는 플라즈마 처리 챔버용 전극.
- 제 8 항에 있어서,상기 내부 직경 벽은 1:1 내지 20:1의 경사를 가지는 것을 특징으로 하는 플라즈마 처리 챔버용 전극.
- 제 8 항에 있어서,상기 가스 주입구는 상기 상부 부분의 상기 외부 디스크 직경으로부터 상기 내부 직경 벽에 의해 정의된 공동으로 연장하는 것을 특징으로 하는 플라즈마 처리 챔버용 전극.
- 제 8 항에 있어서,상기 몸체는 니켈 도금된 알루미늄인 것을 특징으로 하는 플라즈마 처리 챔버용 전극.
- 제 1 항에 있어서, 플라즈마 처리 챔버용 전극.
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