JP6114698B2 - デュアルロードロック構成内の除害及びストリップ処理チャンバ - Google Patents
デュアルロードロック構成内の除害及びストリップ処理チャンバ Download PDFInfo
- Publication number
- JP6114698B2 JP6114698B2 JP2013556826A JP2013556826A JP6114698B2 JP 6114698 B2 JP6114698 B2 JP 6114698B2 JP 2013556826 A JP2013556826 A JP 2013556826A JP 2013556826 A JP2013556826 A JP 2013556826A JP 6114698 B2 JP6114698 B2 JP 6114698B2
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- Prior art keywords
- chamber
- substrate
- chamber volume
- load lock
- volume
- Prior art date
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Classifications
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
- H01J37/32844—Treating effluent gases
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/3065—Plasma etching; Reactive-ion etching
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
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- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
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- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
- Y02C20/00—Capture or disposal of greenhouse gases
- Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
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Description
本発明の実施形態は、概して、半導体基板上にデバイスを製造するための方法及び装置に関する。より具体的には、本発明の実施形態は、2つのチャンバ容積を含むロードロックチャンバに関し、少なくとも1つのチャンバ容積は基板を処理するために構成される。
本発明の実施形態は、概して、半導体基板上にデバイスを製造するための方法及び装置に関する。より具体的には、本発明の実施形態は、2つのロードロックを含み、基板を処理することができるロードロックチャンバに関する。
Claims (16)
- 互いに分離した第1チャンバ容積及び第2チャンバ容積を画定するチャンバ本体であって、第1チャンバ容積は、第1開口部を介して第1処理環境に選択的に接続可能であり、第2開口部を介して第2処理環境に選択的に接続可能であり、第1及び第2開口部は、第1チャンバ容積内への基板搬送用に構成され、第2チャンバ容積は、第3開口部を介して前記第1処理環境に選択的に接続可能であり、第4開口部を介して前記第2処理環境に選択的に接続可能であり、第3及び第4開口部は、第2チャンバ容積内への基板搬送用に構成されるチャンバ本体と、
第2チャンバ容積内に配置され、上で基板を支持及び加熱するように構成された加熱基板支持アセンブリと、
第2チャンバ容積にプラズマを供給するための、第2チャンバ容積に接続されたリモートプラズマソースを含むロードロックチャンバ。 - 互いに分離した第1チャンバ容積及び第2チャンバ容積を画定するチャンバ本体であって、第1チャンバ容積は、基板搬送用に構成された2つの開口部を介して2つの処理環境に選択的に接続可能であり、第2チャンバ容積は、2つの処理環境のうち少なくとも1つに選択的に接続されるチャンバ本体と、
第2チャンバ容積内に配置され、上で基板を支持及び加熱するように構成された加熱基板支持アセンブリと、
第2チャンバ容積にプラズマを供給するための、第2チャンバ容積に接続されたリモートプラズマソースと、
加熱基板支持アセンブリとチャンバ本体の間で第2チャンバ容積内に配置された断熱材を含み、加熱基板支持アセンブリはチャンバ本体に直接接触しないロードロックチャンバ。 - チャンバ本体は、
第1チャンバ容積を画定する上壁、側壁、及びチャンバ底を有する第1チャンバ本体と、
第1チャンバ本体の上壁上に積まれた第2チャンバ本体であって、第2チャンバ本体と、第1チャンバ本体の上壁は、第2チャンバ容積を画定する第2チャンバ本体を含む請求項2記載のロードロックチャンバ。 - 加熱基板支持アセンブリは、
上で基板を支持するための上面を有する上部加熱板と、
上部加熱板の下面に取り付けられた下部加熱板と、
上部加熱板と下部加熱板の間に配置されたヒーターを含む請求項3記載のロードロックチャンバ。 - 加熱基板支持アセンブリは、下部加熱板の中央に取り付けられたカンチレバーチューブを含む請求項4記載のロードロックチャンバ。
- 加熱基板支持アセンブリは、上部加熱板の上面に基板をチャックするように構成されたチャック機構を含む請求項4記載のロードロックチャンバ。
- 第2チャンバ本体によって画定された中央開口部内に配置され、第2チャンバ容積に処理ガスを供給するように構成されたシャワーヘッドを含む請求項3記載のロードロックチャンバ。
- 第2チャンバ本体の上方に配置され、第2チャンバ容積に向かって放射エネルギーを供給するように構成されたランプアセンブリを含む請求項3記載のロードロックチャンバ。
- 下部真空ポートが第1チャンバ本体のチャンバ底を貫通して形成され、下部真空ポートは、第1チャンバ容積へのポンピングチャネルを提供する請求項3記載のロードロックチャンバ。
- 上部真空ポートが第1チャンバ本体の側壁を貫通して形成され、上部真空ポートは、第2チャンバ容積に開口している請求項9記載のロードロックチャンバ。
- 第2チャンバ容積内に配置されたリフトフープアセンブリを含み、リフトフープアセンブリは、リフトに取り付けられたフープ本体を含み、フープ本体は、加熱基板支持アセンブリを囲んでいる請求項1記載のロードロックチャンバ。
- リフトフープアセンブリは、フープ本体から鉛直方向下方及び半径方向内方に延び、基板を受け取り支持するように構成された3以上のリフティングフィンガーを含む請求項11記載のロードロックチャンバ。
- リフトフープアセンブリは、フープ本体に取り付けられたフープライナーを含み、フープライナーは、フープ本体から上方へ延び、加熱基板支持アセンブリの周りに円形の閉じ込め壁を提供する請求項11記載のロードロックチャンバ。
- 第2チャンバ容積は、基板搬送用に構成された開口部を通して2つの処理環境に選択的に接続される請求項2記載のロードロックチャンバ。
- 基板からハロゲン含有残留物を除去するための方法であって、
請求項1〜14のいずれか1項記載のロードロックチャンバの第1チャンバ容積を介して、基板処理システムに基板を搬送する工程であって、ロードロックチャンバは、基板処理システムに結合される工程と、
ハロゲンを含む化学物質で基板を基板処理チャンバ内でエッチングする工程と、
ロードロックチャンバの第2チャンバ容積内で、エッチングされた基板からハロゲン含有残留物を除去する工程であって、
第2チャンバ容積内に配置された加熱基板支持アセンブリ上で、エッチングされた基板を加熱する工程と、
第2チャンバ容積に処理ガスを流す工程を含むハロゲン含有残留物を除去する工程を含む方法。 - 互いに分離した第1チャンバ容積及び第2チャンバ容積を画定するチャンバ本体であって、第1チャンバ容積は、第1チャンバ容積内への基板搬送用に構成された2つの開口部を介して第1処理環境及び第2処理環境に選択的に接続可能であり、第2チャンバ容積は、第2チャンバ容積内への基板搬送用に構成された2つの開口部を介して前記第1処理環境及び前記第2処理環境に選択的に接続可能であるチャンバ本体と、
第2チャンバ容積内に配置され、上で基板を支持及び加熱するように構成された加熱基板支持アセンブリと、
第2チャンバ容積にプラズマを供給するための、第2チャンバ容積に接続されたリモートプラズマソースと、
加熱基板支持アセンブリとチャンバ本体の間で第2チャンバ容積内に配置された断熱材を含み、加熱基板支持アセンブリはチャンバ本体に直接接触しないロードロックチャンバ。
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