KR20020089516A - 퍼플루오로탄소의 제조방법 및 그 용도 - Google Patents
퍼플루오로탄소의 제조방법 및 그 용도 Download PDFInfo
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- KR20020089516A KR20020089516A KR1020027014134A KR20027014134A KR20020089516A KR 20020089516 A KR20020089516 A KR 20020089516A KR 1020027014134 A KR1020027014134 A KR 1020027014134A KR 20027014134 A KR20027014134 A KR 20027014134A KR 20020089516 A KR20020089516 A KR 20020089516A
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- perfluorocarbon
- oxygen
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- 238000000034 method Methods 0.000 title claims description 45
- 239000007789 gas Substances 0.000 claims abstract description 194
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims abstract description 84
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 83
- 239000011737 fluorine Substances 0.000 claims abstract description 83
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 83
- 150000001875 compounds Chemical class 0.000 claims abstract description 68
- 238000006243 chemical reaction Methods 0.000 claims abstract description 60
- 238000004519 manufacturing process Methods 0.000 claims abstract description 56
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 51
- 239000001301 oxygen Substances 0.000 claims abstract description 51
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 51
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 50
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910001882 dioxygen Inorganic materials 0.000 claims abstract description 34
- 239000012535 impurity Substances 0.000 claims abstract description 31
- 238000004140 cleaning Methods 0.000 claims abstract description 18
- 238000005530 etching Methods 0.000 claims abstract description 16
- 239000007805 chemical reaction reactant Substances 0.000 claims abstract description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 34
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 33
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims description 30
- 239000003085 diluting agent Substances 0.000 claims description 25
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 19
- LVGUZGTVOIAKKC-UHFFFAOYSA-N 1,1,1,2-tetrafluoroethane Chemical compound FCC(F)(F)F LVGUZGTVOIAKKC-UHFFFAOYSA-N 0.000 claims description 16
- 125000004432 carbon atom Chemical group C* 0.000 claims description 14
- WMIYKQLTONQJES-UHFFFAOYSA-N hexafluoroethane Chemical compound FC(F)(F)C(F)(F)F WMIYKQLTONQJES-UHFFFAOYSA-N 0.000 claims description 14
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 claims description 12
- 125000001931 aliphatic group Chemical group 0.000 claims description 11
- QYSGYZVSCZSLHT-UHFFFAOYSA-N octafluoropropane Chemical compound FC(F)(F)C(F)(F)C(F)(F)F QYSGYZVSCZSLHT-UHFFFAOYSA-N 0.000 claims description 10
- 229960004065 perflutren Drugs 0.000 claims description 10
- 239000003054 catalyst Substances 0.000 claims description 8
- 229920006395 saturated elastomer Polymers 0.000 claims description 8
- NSGXIBWMJZWTPY-UHFFFAOYSA-N 1,1,1,3,3,3-hexafluoropropane Chemical compound FC(F)(F)CC(F)(F)F NSGXIBWMJZWTPY-UHFFFAOYSA-N 0.000 claims description 6
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 6
- GTLACDSXYULKMZ-UHFFFAOYSA-N pentafluoroethane Chemical compound FC(F)C(F)(F)F GTLACDSXYULKMZ-UHFFFAOYSA-N 0.000 claims description 6
- UJPMYEOUBPIPHQ-UHFFFAOYSA-N 1,1,1-trifluoroethane Chemical compound CC(F)(F)F UJPMYEOUBPIPHQ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- UKACHOXRXFQJFN-UHFFFAOYSA-N heptafluoropropane Chemical compound FC(F)C(F)(F)C(F)(F)F UKACHOXRXFQJFN-UHFFFAOYSA-N 0.000 claims description 4
- MSSNHSVIGIHOJA-UHFFFAOYSA-N pentafluoropropane Chemical compound FC(F)CC(F)(F)F MSSNHSVIGIHOJA-UHFFFAOYSA-N 0.000 claims description 3
- JRHNUZCXXOTJCA-UHFFFAOYSA-N 1-fluoropropane Chemical compound CCCF JRHNUZCXXOTJCA-UHFFFAOYSA-N 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 29
- 238000002360 preparation method Methods 0.000 description 24
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 description 21
- 238000003682 fluorination reaction Methods 0.000 description 17
- 239000000203 mixture Substances 0.000 description 16
- 238000004817 gas chromatography Methods 0.000 description 15
- 238000004821 distillation Methods 0.000 description 14
- 229910001873 dinitrogen Inorganic materials 0.000 description 13
- 239000012895 dilution Substances 0.000 description 10
- 238000010790 dilution Methods 0.000 description 10
- 239000007858 starting material Substances 0.000 description 10
- YUCFVHQCAFKDQG-UHFFFAOYSA-N fluoromethane Chemical compound F[CH] YUCFVHQCAFKDQG-UHFFFAOYSA-N 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 238000000746 purification Methods 0.000 description 8
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 7
- 239000012071 phase Substances 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 238000004458 analytical method Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 4
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 4
- 238000004880 explosion Methods 0.000 description 4
- 238000002290 gas chromatography-mass spectrometry Methods 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 3
- 239000012295 chemical reaction liquid Substances 0.000 description 3
- 239000012024 dehydrating agents Substances 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000001294 propane Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- OYAUGTZMGLUNPS-UHFFFAOYSA-N 1,1,1,2,3,3,3-heptafluoro-2-(1,1,1,2,3,3,3-heptafluoropropan-2-yloxy)propane Chemical compound FC(F)(F)C(F)(C(F)(F)F)OC(F)(C(F)(F)F)C(F)(F)F OYAUGTZMGLUNPS-UHFFFAOYSA-N 0.000 description 1
- -1 CF 3 OCF 3 Chemical class 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 235000013162 Cocos nucifera Nutrition 0.000 description 1
- 244000060011 Cocos nucifera Species 0.000 description 1
- 239000004338 Dichlorodifluoromethane Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- 239000003463 adsorbent Substances 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 125000004773 chlorofluoromethyl group Chemical group [H]C(F)(Cl)* 0.000 description 1
- AFYPFACVUDMOHA-UHFFFAOYSA-N chlorotrifluoromethane Chemical compound FC(F)(F)Cl AFYPFACVUDMOHA-UHFFFAOYSA-N 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- PXBRQCKWGAHEHS-UHFFFAOYSA-N dichlorodifluoromethane Chemical compound FC(F)(Cl)Cl PXBRQCKWGAHEHS-UHFFFAOYSA-N 0.000 description 1
- 235000019404 dichlorodifluoromethane Nutrition 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- HCDGVLDPFQMKDK-UHFFFAOYSA-N hexafluoropropylene Chemical group FC(F)=C(F)C(F)(F)F HCDGVLDPFQMKDK-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 229910001055 inconels 600 Inorganic materials 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910001512 metal fluoride Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 description 1
- BPXRXDJNYFWRDI-UHFFFAOYSA-N trifluoro(trifluoromethylperoxy)methane Chemical compound FC(F)(F)OOC(F)(F)F BPXRXDJNYFWRDI-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C17/00—Preparation of halogenated hydrocarbons
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
- C23G5/02—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents
- C23G5/028—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents containing halogenated hydrocarbons
- C23G5/02803—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents containing halogenated hydrocarbons containing fluorine
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C17/00—Preparation of halogenated hydrocarbons
- C07C17/093—Preparation of halogenated hydrocarbons by replacement by halogens
- C07C17/10—Preparation of halogenated hydrocarbons by replacement by halogens of hydrogen atoms
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C17/00—Preparation of halogenated hydrocarbons
- C07C17/093—Preparation of halogenated hydrocarbons by replacement by halogens
- C07C17/20—Preparation of halogenated hydrocarbons by replacement by halogens of halogen atoms by other halogen atoms
- C07C17/21—Preparation of halogenated hydrocarbons by replacement by halogens of halogen atoms by other halogen atoms with simultaneous increase of the number of halogen atoms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Abstract
Description
생성물 | 산소가스 함량(부피%) | |
제조예 1 | 트리플루오로메탄 | 1.2081 |
제조예 2 | 트리플루오로메탄 | 0.0720 |
제조예 3 | 테트라플루오로에탄 | 1.3314 |
제조예 4 | 테트라플루오로에탄 | 0.0402 |
제조예 5 | F2 | 1.3825 |
제조예 6 | F2 | 0.3020 |
반응시작물질 | 반응온도(℃) | 반응시작물질 중의산소가스의 총 농도(부피%) | 퍼플루오로탄소 중의산소함유 화합물의 농도(부피ppm) | 정제후 산소함유 화합물의 농도(부피ppm) | |
실시예 1 | 제조예 2제조예 6 | 420 | 0.3740 | 2이하 | 0.5이하 |
실시예 2 | 제조예 4제조예 6 | 370 | 0.3422 | 1이하 | 0.4이하 |
비교예 1 | 제조예 1제조예 5 | 450 | 2.5906 | 271 | |
비교예 2 | 제조예 3제조예 5 | 430 | 2.7139 | 319 | 130 |
비교예 3 | 제조예 2제조예 6 | 520 | 0.3740 | 635 |
Claims (24)
- 유기화합물 및 불소가스를 함유하는 반응시작물질로부터 퍼플루오로탄소를 제조하는 방법으로서, 상기 유기화합물과 상기 불소가스를 200∼500℃의 온도에서 접촉시키면서, 반응계 내의 산소가스의 함량을 상기 반응시작물질 중의 가스성분에 대해서 2부피% 이하까지 제어하여, 불순물 함량이 저감된 퍼플루오로탄소를 제조하는 것을 특징으로 하는 퍼플루오로탄소의 제조방법.
- 제1항에 있어서, 상기 유기화합물과 상기 불소가스를 희석가스의 존재하에서 접촉시키는 것을 특징으로 하는 퍼플루오로탄소의 제조방법.
- 제1항에 있어서, 상기 유기화합물은 탄소수 6이하의 지방족 포화 화합물 및/또는 탄소수 6이하의 지방족 불포화 화합물인 것을 특징으로 하는 퍼플루오로탄소의 제조방법.
- 제1항에 있어서, 상기 유기화합물은 탄소수 6이하의 지방족 포화 화합물인 것을 특징으로 하는 퍼플루오로탄소의 제조방법.
- 제4항에 있어서, 상기 유기화합물은 플루오로메탄, 디플루오로메탄, 트리플루오로메탄, 트리플루오로에탄, 테트라플루오로에탄, 펜타플루오로에탄, 펜타플루오로프로판, 헥사플루오로프로판 및 헵타플루오로프로판으로 이루어진 군에서 선택되는 1종 이상인 것을 특징으로 하는 퍼플루오로탄소의 제조방법.
- 제1항 내지 제5항 중 어느 한 항에 있어서, 희석가스의 존재하에서 촉매를 사용하지 않고 가스상에서 상기 유기화합물과 불소가스를 접촉시킴으로써 퍼플루오로탄소를 제조하는 방법으로서, 상기 유기화합물과 불소가스를 접촉시키기 전의 상기 불소가스에 함유된 산소가스의 양이 상기 불소가스에 대해서 1부피% 이하인 것을 특징으로 하는 퍼플루오로탄소의 제조방법.
- 제6항에 있어서, 상기 유기화합물은 탄소수 4이하의 히드로플루오로탄소인 것을 특징으로 하는 퍼플루오로탄소의 제조방법.
- 제7항에 있어서, 상기 유기화합물은 디플루오로메탄, 트리플루오로메탄, 트리플루오로에탄, 테트라플루오로에탄, 펜타플루오로에탄, 헥사플루오로프로판 및 헵타플루오로프로판으로 이루어진 군에서 선택되는 1종 이상인 것을 특징으로 하는 퍼플루오로탄소의 제조방법
- 제1항 내지 제5항 중 어느 한 항에 있어서, 상기 반응계로 도입되는 불소가스의 양은 상기 반응계 내의 가스성분의 총량에 대해서 9부피% 이하인 것을 특징으로 하는 퍼플루오로탄소의 제조방법.
- 제2항 내지 제5항 중 어느 한 항에 있어서, 상기 희석가스는 테트라플루오로메탄, 헥사플루오로에탄, 옥타플루오로프로판 및 불소화수소로 이루어진 군에서 선택되는 1종 이상인 것을 특징으로 하는 퍼플루오로탄소의 제조방법.
- 제10항에 있어서, 상기 희석가스는 상기 불소화수소를 함유하고, 그 불소화수소의 함량은 희석가스 전체 양에 대해서 50부피% 이상인 것을 특징으로 하는 퍼플루오로탄소의 제조방법.
- 제1항 내지 제5항 중 어느 한 항에 있어서, 상기 불순물은 산소함유 화합물인 것을 특징으로 하는 퍼플루오로탄소의 제조방법.
- 제1항 내지 제5항 중 어느 한 항에 있어서, 상기 산소함유 화합물을 흡착하여 제거하는 단계를 더 포함하는 것을 특징으로 하는 퍼플루오로탄소의 제조방법.
- 제13항에 있어서, 상기 산소함유 화합물은 활성탄에 의해 흡착되어 제거되는 것을 특징으로 하는 퍼플루오로탄소의 제조방법.
- 제1항 내지 제5항 중 어느 한 항에 있어서, 상기 퍼플루오로탄소는 테트라플루오로메탄, 헥사플루오로에탄 및 옥타플루오로프로판으로 이루어진 군에서 선택되는 1종 이상인 것을 특징으로 하는 퍼플루오로탄소의 제조방법.
- 제1항 내지 제5항 중 어느 한 항에 있어서, 상기 퍼플루오로탄소에 함유된 산소함유 화합물의 총량은 5부피ppm 이하인 것을 특징으로 하는 퍼플루오로탄소의 제조방법.
- 산소함유 화합물의 함량이 5부피ppm 이하인 것을 특징으로 하는 퍼플루오로탄소.
- 제17항에 있어서, 산소함유 화합물의 함량이 2부피ppm 이하인 것을 특징으로 하는 퍼플루오로탄소.
- 제17항 또는 제18항에 기재된 퍼플루오로탄소를 함유하는 것을 특징으로 하는 가스.
- 제19항에 기재된 가스를 함유하는 것을 특징으로 하는 에칭가스.
- 제20항에 있어서, 상기 퍼플루오로탄소는 테트라플루오로메탄인 것을 특징으로 하는 에칭가스.
- 제19항에 기재된 가스를 함유하는 것을 특징으로 하는 클리닝가스.
- 제22항에 있어서, 상기 퍼플루오로탄소는 헥사플루오로에탄인 것을 특징으로 하는 클리닝가스.
- 제22항에 있어서, 상기 퍼플루오로탄소는 옥타플루오로프로판인 것을 특징으로 하는 클리닝가스.
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JP2001048985A JP4703865B2 (ja) | 2001-02-23 | 2001-02-23 | パーフルオロカーボン類の製造方法およびその用途 |
JPJP-P-2001-00048985 | 2001-02-23 | ||
US27245101P | 2001-03-02 | 2001-03-02 | |
US60/272,451 | 2001-03-02 |
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US (2) | US7064240B2 (ko) |
KR (1) | KR100519140B1 (ko) |
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WO (1) | WO2002066408A2 (ko) |
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KR20200095530A (ko) * | 2018-01-19 | 2020-08-10 | 쇼와 덴코 가부시키가이샤 | 테트라플루오로메탄의 제조 방법 |
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KR20200093025A (ko) * | 2018-01-17 | 2020-08-04 | 쇼와 덴코 가부시키가이샤 | 테트라플루오로메탄의 제조 방법 |
KR20200095530A (ko) * | 2018-01-19 | 2020-08-10 | 쇼와 덴코 가부시키가이샤 | 테트라플루오로메탄의 제조 방법 |
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CN1301947C (zh) | 2007-02-28 |
US20040162450A1 (en) | 2004-08-19 |
WO2002066408A3 (en) | 2003-01-09 |
US7064240B2 (en) | 2006-06-20 |
AU2002233670A1 (en) | 2002-09-04 |
KR100519140B1 (ko) | 2005-10-04 |
WO2002066408A2 (en) | 2002-08-29 |
US7176337B2 (en) | 2007-02-13 |
US20030163008A1 (en) | 2003-08-28 |
CN1457332A (zh) | 2003-11-19 |
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