KR20020014775A - 압전 세라믹재, 소결 압전 세라믹 컴팩트 및 압전 세라믹소자 - Google Patents
압전 세라믹재, 소결 압전 세라믹 컴팩트 및 압전 세라믹소자 Download PDFInfo
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- 239000000919 ceramic Substances 0.000 title claims abstract description 131
- 229910010293 ceramic material Inorganic materials 0.000 title claims abstract description 55
- 230000010287 polarization Effects 0.000 claims abstract description 45
- 230000008878 coupling Effects 0.000 claims abstract description 31
- 238000010168 coupling process Methods 0.000 claims abstract description 31
- 238000005859 coupling reaction Methods 0.000 claims abstract description 31
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000013078 crystal Substances 0.000 claims abstract description 19
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 19
- 239000001301 oxygen Substances 0.000 claims abstract description 19
- 239000006104 solid solution Substances 0.000 claims abstract description 12
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical group [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229920006395 saturated elastomer Polymers 0.000 claims abstract description 10
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 9
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 9
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 8
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 8
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 16
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 16
- 229910052746 lanthanum Inorganic materials 0.000 claims description 12
- 229910052748 manganese Inorganic materials 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- 238000010304 firing Methods 0.000 abstract description 20
- 239000000463 material Substances 0.000 abstract description 5
- 229910003781 PbTiO3 Inorganic materials 0.000 abstract 1
- 229910020698 PbZrO3 Inorganic materials 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 12
- 239000000203 mixture Substances 0.000 description 11
- 239000004033 plastic Substances 0.000 description 10
- 238000006467 substitution reaction Methods 0.000 description 6
- 238000005452 bending Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000003780 insertion Methods 0.000 description 4
- 230000037431 insertion Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000010292 electrical insulation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000013016 damping Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 101100513612 Microdochium nivale MnCO gene Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910008651 TiZr Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000013001 point bending Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/09—Forming piezoelectric or electrostrictive materials
- H10N30/093—Forming inorganic materials
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
- H03H9/02031—Characteristics of piezoelectric layers, e.g. cutting angles consisting of ceramic
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/472—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on lead titanates
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
- C04B35/49—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
- C04B35/49—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates
- C04B35/491—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates based on lead zirconates and lead titanates, e.g. PZT
- C04B35/493—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates based on lead zirconates and lead titanates, e.g. PZT containing also other lead compounds
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8548—Lead-based oxides
- H10N30/8554—Lead-zirconium titanate [PZT] based
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- Manufacturing & Machinery (AREA)
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- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Composite Materials (AREA)
- Acoustics & Sound (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
Claims (18)
- 주성분이 PbTiO3, PbZrO3및 Pb(MaXMdY)O3로 구성된 고용체를 포함하고, Pb의 약 20몰%까지가 Ca, Ba, Sr 및 La로부터 선택된 적어도 한 종으로 치환되고, Ma는 2가 원소 및 3가 원소로 구성된 그룹으로부터 선택된 적어도 한 종이며, 그리고 Md는 5가 원소 및 6가 원소로 구성된 그룹으로부터 선택된 적어도 한 종이고,상기 고용체는 정방정 결정구조이며, 그리고상기 Ma 함유량 X 대 상기 Md 함유량 Y의 비 X/Y는 화학양론비 보다 큰 것을 특징으로 하는 압전 세라믹재.
- 제 1 항에 있어서, 상기 Ma는 Mn이고, 상기 Md는 Nb, Sb, Ta 및 W로 구성된 그룹으로부터 선택된 적어도 하나인 것을 특징으로 하는 압전 세라믹재.
- 제 2 항에 있어서, 상기 Mn, Nb, Sb, Ta 및 W의 몰 함유량이 A, B, C, D 및 E로 각각 나타낸 경우, O.525 ≤A/(B+C+D+2E) ≤1인 것을 특징으로 하는 압전 세라믹재.
- 제 3 항에 있어서, 상기 주성분에 함유된 Pb의 0몰% 이상이 Ca, Ba, Sr 및 La로 구성된 그룹으로부터 선택된 적어도 한 종으로 치환되는 것을 특징으로 하는압전 세라믹재.
- 제 4 항에 있어서, 상기 주성분에 함유된 약 1 내지 4 몰%가 Ca, Ba, Sr 및 La로 구성된 그룹으로부터 선택된 적어도 한 종으로 치환되는 것을 특징으로 하는 압전 세라믹재.
- 제 5 항에 있어서, 상기 주성분의 100 중량부에 대해 SiO2의 약 0.003 내지 0.1 중량부 및 Al2O3의 약 0.003 내지 0.1 중량부를 더 포함하는 것을 특징으로 하는 압전 세라믹재.
- 제 1 항에 있어서, 상기 주성분에 함유된 Pb의 0몰% 이상이 Ca, Ba, Sr 및 La로 구성된 그룹으로부터 선택된 적어도 한 종으로 치환되는 것을 특징으로 하는 압전 세라믹재.
- 제 7 항에 있어서, 상기 주성분에 함유된 Pb의 약 1 내지 4 몰%가 Ca, Ba, Sr 및 La로 구성된 그룹으로부터 선택된 적어도 한 종으로 치환되는 것을 특징으로 하는 압전 세라믹재.
- 제 8 항에 있어서, 상기 주성분의 100 중량부에 대해 SiO2의 약 0.003 내지0.1 중량부 및 Al2O3의 약 0.003 내지 0.1 중량부를 더 포함하는 것을 특징으로 하는 압전 세라믹재.
- 제 1 항에 있어서, 상기 주성분의 100 중량부에 대해 SiO2의 약 0.003 내지 0.1 중량부 및 Al2O3의 약 0.003 내지 0.1 중량부를 더 포함하는 것을 특징으로 하는 압전 세라믹재.
- 적어도 약 80%의 산소 농도인 대기중에 소성된 청구항 10항에 따른 압전 세라믹재를 포함하는 것을 특징으로 하는 소결 압전 세라믹 컴팩트.
- 적어도 약 80%의 산소 농도인 대기중에 소성된 청구항 6항에 따른 압전 세라믹재를 포함하는 것을 특징으로 하는 소결 압전 세라믹 컴팩트.
- 적어도 약 80%의 산소 농도인 대기중에 소성된 청구항 1항에 따른 압전 세라믹재를 포함하는 것을 특징으로 하는 소결 압전 세라믹 컴팩트.
- 제 13 항에 있어서, 상기 소결 압전 세라믹 컴팩트가 포화 분극 상태의 소결 압전 세라믹 컴팩트의 전기기계 결합 계수의 약 80% 이하에 대응하는 전기기계 결합 계수를 가진 불포화 분극 상태에 있는 것을 특징으로 하는 소결 압전 세라믹 컴팩트.
- 표면 전극과 결합하여 청구항 14항에 따른 소결 압전 세라믹 컴팩트를 포함하는 것을 특징으로 하는 압전 세라믹 소자.
- 포화 분극 상태의 소결 압전 세라믹 컴팩트의 전기기계 결합 계수의 약 80% 이하에 대응하는 전기기계 결합 계수를 가진 불포화 분극 상태에 있는 것을 특징으로 하는 청구항 1의 소결 압전 세라믹 컴팩트.
- 표면 전극과 결합하여 청구항 16항에 따른 소결 압전 세라믹 컴팩트를 포함하는 것을 특징으로 하는 압전 세라믹 소자.
- 포화 분극 상태의 소결 압전 세라믹 컴팩트의 전기기계 결합 계수의 약 80% 이하에 대응하는 전기기계 결합 계수를 가진 불포화 분극 상태에 있는 것을 특징으로 하는 청구항 6의 소결 압전 세라믹 컴팩트.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2000248439A JP3783534B2 (ja) | 2000-08-18 | 2000-08-18 | 圧電磁器焼結体および圧電磁器素子 |
JPJP-P-2000-00248439 | 2000-08-18 |
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KR20020014775A true KR20020014775A (ko) | 2002-02-25 |
KR100434418B1 KR100434418B1 (ko) | 2004-06-04 |
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KR10-2001-0049782A KR100434418B1 (ko) | 2000-08-18 | 2001-08-18 | 압전 세라믹재, 소결 압전 세라믹 컴팩트 및 압전 세라믹 소자 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6454959B1 (ko) |
JP (1) | JP3783534B2 (ko) |
KR (1) | KR100434418B1 (ko) |
CN (1) | CN1188918C (ko) |
DE (1) | DE10140396B4 (ko) |
FR (1) | FR2813075B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20010067819A (ko) * | 2001-03-31 | 2001-07-13 | 이상렬 | 압전특성이 우수한 압전 변압기와 그 소성방법 |
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JPWO2005068394A1 (ja) * | 2004-01-20 | 2007-09-06 | 株式会社アイエイアイ | 圧電磁器組成物 |
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US7264744B2 (en) * | 2004-03-26 | 2007-09-04 | Tdk Corporation | Piezoelectric ceramic and piezoelectric device |
WO2005092817A1 (ja) * | 2004-03-26 | 2005-10-06 | Tdk Corporation | 圧電磁器組成物 |
US20050222789A1 (en) * | 2004-03-31 | 2005-10-06 | West Burnell G | Automatic test system |
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US20090065731A1 (en) * | 2007-09-06 | 2009-03-12 | Tdk Corporation | Method for producing piezoelectric ceramic |
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JP5018648B2 (ja) * | 2008-05-29 | 2012-09-05 | Tdk株式会社 | 圧電磁器及びこれを用いたレゾネータ |
JP5392603B2 (ja) * | 2009-03-13 | 2014-01-22 | 株式会社村田製作所 | 圧電セラミック電子部品の製造方法 |
CN103508721A (zh) * | 2012-06-18 | 2014-01-15 | 苏州忠辉蜂窝陶瓷有限公司 | 一种超声电机用压电陶瓷的制备方法 |
CN102796406B (zh) * | 2012-07-27 | 2015-04-08 | 东莞思威特电子有限公司 | 玻璃浆料、其制备方法和压电陶瓷雾化片的制备方法 |
WO2014084265A1 (ja) * | 2012-11-27 | 2014-06-05 | 富山県 | 圧電セラミックスの製造方法、圧電セラミックス、および圧電素子 |
JP6310775B2 (ja) * | 2014-05-29 | 2018-04-11 | Fdk株式会社 | 圧電磁器組成物および圧電磁器組成物の製造方法 |
CN104446521B (zh) * | 2014-11-07 | 2016-05-25 | 东莞思威特电子有限公司 | 一种降低pzt压电料粉煅烧温度的工艺 |
JP6321562B2 (ja) * | 2015-01-29 | 2018-05-09 | 京セラ株式会社 | 圧電磁器組成物、圧電素子および圧電振動装置 |
JP6913547B2 (ja) * | 2017-07-13 | 2021-08-04 | Njコンポーネント株式会社 | 圧電磁器組成物および圧電磁器組成物の製造方法 |
DE102017116925B4 (de) * | 2017-07-26 | 2021-04-22 | Tdk Electronics Ag | Harte PZT-Keramik, piezoelektrisches Vielschichtbauelement und Verfahren zur Herstellung eines piezoelektrischen Vielschichtbauelements |
CN109678501B (zh) * | 2018-12-17 | 2021-11-19 | 贵州振华红云电子有限公司 | 一种烟雾报警器专用压电振子瓷料配方及其制备方法 |
CN116396075B (zh) * | 2022-12-16 | 2023-12-22 | 惠州市鑫永诚传感科技有限公司 | 热释电陶瓷材料及其制备方法 |
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2000
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2001
- 2001-08-10 CN CNB011249706A patent/CN1188918C/zh not_active Expired - Fee Related
- 2001-08-16 US US09/931,496 patent/US6454959B1/en not_active Expired - Lifetime
- 2001-08-17 FR FR0110896A patent/FR2813075B1/fr not_active Expired - Fee Related
- 2001-08-17 DE DE2001140396 patent/DE10140396B4/de not_active Expired - Fee Related
- 2001-08-18 KR KR10-2001-0049782A patent/KR100434418B1/ko not_active IP Right Cessation
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Publication number | Priority date | Publication date | Assignee | Title |
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KR20010067819A (ko) * | 2001-03-31 | 2001-07-13 | 이상렬 | 압전특성이 우수한 압전 변압기와 그 소성방법 |
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Publication number | Publication date |
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DE10140396B4 (de) | 2007-02-01 |
JP2002060269A (ja) | 2002-02-26 |
DE10140396A1 (de) | 2002-03-07 |
FR2813075A1 (fr) | 2002-02-22 |
FR2813075B1 (fr) | 2006-01-20 |
KR100434418B1 (ko) | 2004-06-04 |
US20020041132A1 (en) | 2002-04-11 |
US6454959B1 (en) | 2002-09-24 |
CN1188918C (zh) | 2005-02-09 |
JP3783534B2 (ja) | 2006-06-07 |
CN1339829A (zh) | 2002-03-13 |
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