KR20010112324A - 플라즈마처리장치 및 그 메인티넌스방법 - Google Patents

플라즈마처리장치 및 그 메인티넌스방법 Download PDF

Info

Publication number: KR20010112324A
Authority: KR; South Korea
Prior art keywords: plasma; processing chamber; openable; opening; antenna
Prior art date: 1999-03-17

Application number

KR1020017011655A

Other languages

English (en)

Korean (ko)

Inventor

마스다도시오

가네키요히로시

후지모토데츠오

스에히로미츠루

마타노가츠지

다카하시가즈에

Original Assignee

가나이 쓰도무

가부시끼가이샤 히다치 세이사꾸쇼

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1999-03-17

Filing date

2000-03-16

Publication date

2001-12-20

2000-03-16 Application filed by 가나이 쓰도무, 가부시끼가이샤 히다치 세이사꾸쇼 filed Critical 가나이 쓰도무

2001-12-20 Publication of KR20010112324A publication Critical patent/KR20010112324A/ko

Links

238000000034 method Methods 0.000 title claims description 45
238000012423 maintenance Methods 0.000 claims abstract description 50
229910052755 nonmetal Inorganic materials 0.000 claims abstract description 15
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
239000010453 quartz Substances 0.000 claims description 14
229910052710 silicon Inorganic materials 0.000 claims description 14
239000010703 silicon Substances 0.000 claims description 14
238000010168 coupling process Methods 0.000 claims description 5
230000008878 coupling Effects 0.000 claims description 4
238000005859 coupling reaction Methods 0.000 claims description 4
238000000926 separation method Methods 0.000 claims description 2
238000003672 processing method Methods 0.000 abstract description 2
230000007246 mechanism Effects 0.000 description 25
235000012431 wafers Nutrition 0.000 description 20
239000007789 gas Substances 0.000 description 19
238000001020 plasma etching Methods 0.000 description 18
230000008569 process Effects 0.000 description 18
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
238000005530 etching Methods 0.000 description 14
238000004140 cleaning Methods 0.000 description 10
239000004020 conductor Substances 0.000 description 8
238000010586 diagram Methods 0.000 description 8
238000009434 installation Methods 0.000 description 7
239000012212 insulator Substances 0.000 description 7
230000036544 posture Effects 0.000 description 7
238000001179 sorption measurement Methods 0.000 description 7
239000003507 refrigerant Substances 0.000 description 6
239000000463 material Substances 0.000 description 5
230000008901 benefit Effects 0.000 description 4
230000001965 increasing effect Effects 0.000 description 4
238000004519 manufacturing process Methods 0.000 description 4
239000004065 semiconductor Substances 0.000 description 4
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
229910052799 carbon Inorganic materials 0.000 description 3
239000007795 chemical reaction product Substances 0.000 description 3
230000005684 electric field Effects 0.000 description 3
230000005670 electromagnetic radiation Effects 0.000 description 3
230000006872 improvement Effects 0.000 description 3
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
229910052782 aluminium Inorganic materials 0.000 description 2
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
229910052802 copper Inorganic materials 0.000 description 2
239000010949 copper Substances 0.000 description 2
230000000694 effects Effects 0.000 description 2
230000003028 elevating effect Effects 0.000 description 2
230000003993 interaction Effects 0.000 description 2
150000002500 ions Chemical class 0.000 description 2
238000009832 plasma treatment Methods 0.000 description 2
238000007789 sealing Methods 0.000 description 2
229910052814 silicon oxide Inorganic materials 0.000 description 2
241000239290 Araneae Species 0.000 description 1
238000004380 ashing Methods 0.000 description 1
238000005452 bending Methods 0.000 description 1
230000003749 cleanliness Effects 0.000 description 1
239000000470 constituent Substances 0.000 description 1
239000002826 coolant Substances 0.000 description 1
238000005336 cracking Methods 0.000 description 1
238000000151 deposition Methods 0.000 description 1
230000008021 deposition Effects 0.000 description 1
238000003795 desorption Methods 0.000 description 1
238000001035 drying Methods 0.000 description 1
230000002500 effect on skin Effects 0.000 description 1
230000005672 electromagnetic field Effects 0.000 description 1
238000010438 heat treatment Methods 0.000 description 1
230000001939 inductive effect Effects 0.000 description 1
238000009616 inductively coupled plasma Methods 0.000 description 1
239000004973 liquid crystal related substance Substances 0.000 description 1
238000011068 loading method Methods 0.000 description 1
230000008531 maintenance mechanism Effects 0.000 description 1
238000002156 mixing Methods 0.000 description 1
238000009740 moulding (composite fabrication) Methods 0.000 description 1
238000003825 pressing Methods 0.000 description 1
238000011160 research Methods 0.000 description 1
238000004544 sputter deposition Methods 0.000 description 1
239000000758 substrate Substances 0.000 description 1
230000008646 thermal stress Effects 0.000 description 1
238000004506 ultrasonic cleaning Methods 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Microelectronics & Electronic Packaging (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Plasma & Fusion (AREA)
Power Engineering (AREA)
Chemical & Material Sciences (AREA)
Analytical Chemistry (AREA)
Chemical Vapour Deposition (AREA)
Drying Of Semiconductors (AREA)
Plasma Technology (AREA)

KR1020017011655A 1999-03-17 2000-03-16 플라즈마처리장치 및 그 메인티넌스방법 KR20010112324A (ko)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
JP07257799A JP3205312B2 (ja)	1999-03-17	1999-03-17	プラズマ処理装置及びプラズマ処理装置のメンテナンス方法
JPJP-P-1999-00072577		1999-03-17
PCT/JP2000/001590 WO2000055894A1 (fr)	1999-03-17	2000-03-16	Appareil de traitement au plasma et son procede d'entretien

Publications (1)

Publication Number	Publication Date
KR20010112324A true KR20010112324A (ko)	2001-12-20

Family

ID=13493387

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
KR1020017011655A KR20010112324A (ko)	1999-03-17	2000-03-16	플라즈마처리장치 및 그 메인티넌스방법

Country Status (3)

Country	Link
JP (1)	JP3205312B2 (ja)
KR (1)	KR20010112324A (ja)
WO (1)	WO2000055894A1 (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR100442318B1 (ko) *	2001-02-07	2004-08-04	가부시끼가이샤 히다치 세이사꾸쇼	플라즈마처리장치
KR100886272B1 (ko) *	2005-03-31	2009-03-04	도쿄엘렉트론가부시키가이샤	플라즈마 처리 장치
KR101022780B1 (ko) *	2008-11-18	2011-03-17	세메스 주식회사	기판 처리 장치
US8377254B2 (en)	2005-05-30	2013-02-19	Tokyo Electron Limited	Plasma processing apparatus
WO2013078003A1 (en) *	2011-11-21	2013-05-30	Lam Research Corporation	Plasma processing assemblies including hinge assemblies
KR101312505B1 (ko) *	2010-12-10	2013-10-01	엘아이지에이디피 주식회사	안테나 높이 조절이 가능한 기판처리장치
KR101440786B1 (ko) *	2008-07-30	2014-09-24	참엔지니어링(주)	플라즈마 처리 장치

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP3424280B2 (ja)	1993-09-24	2003-07-07	エヌオーケー株式会社	膜状合成ゼオライトの製造法
JP4837163B2 (ja) *	2000-07-27	2011-12-14	株式会社アルバック	スパッタリング装置
EP1371751B1 (en)	2001-02-09	2011-08-17	Tokyo Electron Limited	Film forming device
JP4782761B2 (ja) *	2001-02-09	2011-09-28	東京エレクトロン株式会社	成膜装置
JP4513329B2 (ja) *	2004-01-16	2010-07-28	東京エレクトロン株式会社	処理装置
JP4246654B2 (ja) *	2004-03-08	2009-04-02	株式会社日立ハイテクノロジーズ	真空処理装置
KR100688954B1 (ko)	2005-09-16	2007-03-02	주식회사 아이피에스	플라즈마 처리장치의 개폐구조
JP4642608B2 (ja) *	2005-08-31	2011-03-02	東京エレクトロン株式会社	基板処理装置および基板処理システム
JP4840127B2 (ja) *	2006-12-21	2011-12-21	パナソニック株式会社	プラズマエッチング装置
CN103477721B (zh)	2011-04-04	2016-05-18	佳能安内华股份有限公司	处理装置
US9530626B2 (en) *	2014-07-25	2016-12-27	Tokyo Electron Limited	Method and apparatus for ESC charge control for wafer clamping
JP6491891B2 (ja) *	2015-01-23	2019-03-27	株式会社日立ハイテクノロジーズ	真空処理装置
JP7169786B2 (ja) *	2018-06-25	2022-11-11	東京エレクトロン株式会社	メンテナンス装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH031960U (ja) *	1989-05-30	1991-01-10
JP3066673B2 (ja) *	1992-03-18	2000-07-17	東京エレクトロン株式会社	ドライエッチング方法
JP3172759B2 (ja) *	1993-12-02	2001-06-04	東京エレクトロン株式会社	プラズマ処理方法及びプラズマ処理装置
JPH07331445A (ja) *	1994-06-01	1995-12-19	Tokyo Electron Ltd	処理装置及び該処理装置に用いられるカバー体の洗浄方法
JP3335010B2 (ja) *	1994-08-19	2002-10-15	東京エレクトロン株式会社	処理装置
JP3122617B2 (ja) *	1996-07-19	2001-01-09	東京エレクトロン株式会社	プラズマ処理装置
JPH11140648A (ja) *	1997-11-07	1999-05-25	Tokyo Electron Ltd	プロセスチャンバ装置及び処理装置

1999
- 1999-03-17 JP JP07257799A patent/JP3205312B2/ja not_active Expired - Lifetime
2000
- 2000-03-16 WO PCT/JP2000/001590 patent/WO2000055894A1/ja not_active Application Discontinuation
- 2000-03-16 KR KR1020017011655A patent/KR20010112324A/ko not_active Application Discontinuation

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR100442318B1 (ko) *	2001-02-07	2004-08-04	가부시끼가이샤 히다치 세이사꾸쇼	플라즈마처리장치
KR100886272B1 (ko) *	2005-03-31	2009-03-04	도쿄엘렉트론가부시키가이샤	플라즈마 처리 장치
US8377254B2 (en)	2005-05-30	2013-02-19	Tokyo Electron Limited	Plasma processing apparatus
KR101440786B1 (ko) *	2008-07-30	2014-09-24	참엔지니어링(주)	플라즈마 처리 장치
KR101022780B1 (ko) *	2008-11-18	2011-03-17	세메스 주식회사	기판 처리 장치
KR101312505B1 (ko) *	2010-12-10	2013-10-01	엘아이지에이디피 주식회사	안테나 높이 조절이 가능한 기판처리장치
WO2013078003A1 (en) *	2011-11-21	2013-05-30	Lam Research Corporation	Plasma processing assemblies including hinge assemblies
US8826857B2 (en)	2011-11-21	2014-09-09	Lam Research Corporation	Plasma processing assemblies including hinge assemblies

Also Published As

Publication number	Publication date
WO2000055894A1 (fr)	2000-09-21
JP2000269183A (ja)	2000-09-29
JP3205312B2 (ja)	2001-09-04

Legal Events

Date	Code	Title
2001-09-13	A201	Request for examination
2003-12-13	E902	Notification of reason for refusal
2004-03-16	E601	Decision to refuse application

Publication	Publication Date	Title
KR20010112324A (ko)	2001-12-20	플라즈마처리장치 및 그 메인티넌스방법
JP4554824B2 (ja)	2010-09-29	プラズマ処理装置，そのメンテナンス方法およびその施工方法
CN110808202B (zh)	2022-05-24	真空处理装置和维护装置
US20020179245A1 (en)	2002-12-05	Plasma processing apparatus and maintenance method therefor
JP4896337B2 (ja)	2012-03-14	処理装置およびそのメンテナンス方法，処理装置部品の組立機構およびその組立方法，ロック機構およびそのロック方法
KR100429581B1 (ko)	2004-08-12	플라즈마 생성원, 진공 펌핑 장치 및/또는 외팔보형기판지지체와같은장비모듈을구비하는만능진공챔버
KR100294064B1 (ko)	2001-08-07	정전척용 실드
KR100854803B1 (ko)	2008-08-27	기판 처리 장치 및 덮개 지지 장치
US6230652B1 (en)	2001-05-15	Apparatus and methods for upgraded substrate processing system with microwave plasma source
JP6564946B2 (ja)	2019-08-21	プラズマ処理装置
TW201810353A (zh)	2018-03-16	真空處理室及製造真空處理的板狀基板的方法
KR20050114248A (ko)	2005-12-05	처리중의 기판이면(裏面) 증착 감소방법 및 장치
US20140083615A1 (en)	2014-03-27	Antenna assembly and a plasma processing chamber having the same
KR20170092135A (ko)	2017-08-10	플라즈마 처리 용기 및 플라즈마 처리 장치
KR20010007361A (ko)	2001-01-26	개선된 기판용 플라즈마 처리 장치 및 방법
KR20140102799A (ko)	2014-08-25	플라즈마 처리 시스템
JP3363405B2 (ja)	2003-01-08	プラズマ処理装置およびプラズマ処理装置システム
TW202123302A (zh)	2021-06-16	基板處理裝置、基板處理裝置之製造方法及維修方法
KR101724100B1 (ko)	2017-04-07	기판 처리 장치
JP2003321774A (ja)	2003-11-14	プラズマ処理装置及び電極ユニット
KR102615218B1 (ko)	2023-12-15	소모품 교체가 가능한 기판 처리 장치
JP3559760B2 (ja)	2004-09-02	プラズマ処理装置及びそのメンテナンス方法
CN118140297A (zh)	2024-06-04	等离子体处理***和等离子体处理装置
KR20230086303A (ko)	2023-06-15	기판 지지 유닛 및 이를 포함하는 기판 처리 장치
CN111755311A (zh)	2020-10-09	等离子体处理装置和等离子体处理装置的维护方法