WO2000055894A1 - Appareil de traitement au plasma et son procede d'entretien - Google Patents

Appareil de traitement au plasma et son procede d'entretien Download PDF

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Publication number
WO2000055894A1
WO2000055894A1 PCT/JP2000/001590 JP0001590W WO0055894A1 WO 2000055894 A1 WO2000055894 A1 WO 2000055894A1 JP 0001590 W JP0001590 W JP 0001590W WO 0055894 A1 WO0055894 A1 WO 0055894A1
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WO
WIPO (PCT)
Prior art keywords
openable
plasma
processing apparatus
plasma processing
processing chamber
Prior art date
Application number
PCT/JP2000/001590
Other languages
English (en)
Japanese (ja)
Inventor
Toshio Masuda
Hiroshi Kanekiyo
Tetsuo Fujimoto
Mitsuru Suehiro
Katsuji Matano
Kazue Takahashi
Original Assignee
Hitachi, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi, Ltd. filed Critical Hitachi, Ltd.
Priority to KR1020017011655A priority Critical patent/KR20010112324A/ko
Publication of WO2000055894A1 publication Critical patent/WO2000055894A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

Definitions

  • the present invention relates to a plasma processing apparatus and a maintenance method thereof, and more particularly to a plasma processing apparatus suitable for forming a fine pattern in a semiconductor manufacturing process and a maintenance method thereof.
  • plasma processing apparatuses are widely used in microfabrication processes such as film formation, etching, and asshing.
  • the plasma processing apparatus include, for example, Japanese Patent Publication No. 07-161695 (hereinafter, known example 1) and Japanese Patent Application Laid-Open No. Hei 05-33653 (hereinafter, known example 2). ), Etc.
  • Known example 1 discloses a high-frequency inductively coupled plasma processing method having quartz glass or the like in the upper part of a processing chamber.
  • the ceiling lid of the processing chamber is rotatably provided by a hinge so as to be openable, a magnetic field coil for plasma enhancement is supported independently of the ceiling lid, and the magnetic field coil is made movable. It discloses that the upper part of the processing chamber can be opened.
  • a process gas introduced into a vacuum vessel is turned into plasma by plasma generating means, and is reacted on the surface of a semiconductor wafer to perform fine processing.
  • predetermined treatment is performed by exhausting volatile reaction products.
  • the sample is processed.
  • the reaction product adheres to the surface around the lower electrode on which the sample is placed, and eventually peels off and adheres to the wafer surface as foreign matter, which lowers the yield. For this reason, it is necessary to periodically open the plasma processing apparatus to the atmosphere to remove the attached matter, and perform a cleaning operation called jet cleaning. Parts that are exposed to plasma in the vacuum chamber are consumed as the process is repeated, so it is necessary to periodically replace consumable parts.
  • Examples of such techniques relating to the maintenance of the inside of the vacuum vessel include, for example, Japanese Patent Application Laid-Open No. 07-147241 (hereinafter known example 3) and Japanese Patent Application Laid-Open No.
  • Known example 3 discloses a maintenance mechanism in which the entire wafer stage (a wafer is placed with its surface facing down) provided in the upper part of the processing chamber is moved by an elevating mechanism and a horizontal moving mechanism.
  • the openable and closable part at the top of the vacuum vessel is a vertically / horizontally movable wafer holding mechanism.
  • the stage provided on the upper part which can be opened and closed is constituted by a mechanical system, that is, a mechanical part.
  • Known example 4 discloses a device in which an upper exhaust chamber UC, a processing chamber PC, and a lower exhaust chamber DC are configured to be separable, and the upper exhaust chamber UC is vertically movable and can be inverted upside down by a rotating mechanism.
  • the upper exhaust chamber can be moved up and down freely and can be turned upside down by a rotating mechanism.
  • the wall of the upper exhaust chamber U C is covered.
  • the upper wall of the vacuum vessel can be opened and closed by a mechanism such as a hinge, and the upper part of the vacuum vessel is opened at approximately 90 degrees.
  • maintenance methods such as replacement of parts have been adopted in a state of being almost upright.
  • a nonmetallic brittle part such as silicon-quartz is used for a part of the upper electrode and the gas supply means.
  • the present invention has been made to solve the above-mentioned problems, and contributes to improvement of productivity by improving maintainability and usability when replacing consumable parts in a vacuum vessel and wet cleaning. It is an object of the present invention to provide a plasma processing apparatus capable of performing the above and a maintenance method thereof.
  • the present invention is particularly directed to a plasma processing apparatus and a plasma processing apparatus which are excellent in maintenance workability of a processing chamber which may include a non-metal brittle member as a vacuum vessel.
  • the purpose is to provide a solution method.
  • a feature of the present invention is that a movable closed container is provided corresponding to a plurality of vacuum processing modules provided with a vacuum processing chamber in which a sample is vacuum-processed. Opening and closing means for opening and closing the closed container; and means provided between each of the closed containers and the vacuum processing chamber of the vacuum processing module, for transferring the sample into and out of the closed container via the opening and closing means. And that
  • a movable closed container arranged corresponding to a plurality of vacuum processing modules including a vacuum processing chamber in which a sample is vacuum-processed, and the closed container is provided in the vacuum processing module.
  • Other features of the present invention include a vacuum vessel having a processing chamber formed therein, a plasma generator for generating plasma in the processing chamber, and an electrode for holding a sample to be processed in the processing chamber.
  • the plasma processing apparatus may be configured such that an upper wall of the vacuum vessel is configured to be openable and closable, and the openable and closable part includes a nonmetallic brittle member. And at least a part of the upper wall constituting the upper surface of the processing chamber is rotated around a substantially horizontal axis so that the openable / closable portion faces the inside of the processing chamber upward.
  • the openable portion is opened, the inside of the processing chamber is held at an angle of 30 degrees or less from a horizontal plane while holding the component. Are formed, the the or the ⁇ moiety holding the component, said open portion
  • the maintenance operation of the plasma processing apparatus is performed in such a manner that the inside of the processing chamber faces upward.
  • the inside of the process chamber of the enclosable portion be kept at an angle of 30 degrees or less from a horizontal plane. .
  • At least one of the components constituting the plasma generator including the non-metallic brittle member is disposed on the openable upper wall portion of the vacuum vessel, and the processing chamber of the upper wall of the vacuum vessel is provided.
  • the inner side can be held almost flat, that is, open within 30 degrees from the horizontal position. This facilitates maintenance work inside the vacuum container. Within the range of 3 degrees, the non-metallic brittle parts constituting the upper wall can be physically stably held by friction.
  • power is supplied to an antenna installed above the reactor to generate plasma, and the antenna itself, which is a plasma generator, can be closed.
  • the non-metallic brittle part when detaching the non-metallic brittle part from the upper wall part, the non-metallic brittle part is substantially horizontal with respect to the antenna and the upper electrode in the upper wall even when all the mounting screws are removed. In a stable state due to frictional force Is done.
  • non-metallic brittle components such as quartz / silicon, which is a part of the material constituting the antenna, are difficult to crack, and the handling of the upper wall becomes difficult. It will be easier. In other words, when attaching or detaching a non-metallic brittle part, the part is held horizontally, so no excessive force is applied to the mounting screw during detaching work, and the part is not accidentally dropped. (4) It has the effect of preventing cracks and breakage even in non-metallic brittle parts such as silicon.
  • the posture of the worker becomes easier and workability is improved.
  • This facilitates maintenance work inside the vacuum vessel, especially for the plasma generator.
  • the physical and psychological burden on the worker can be greatly reduced because the worker who performs the part replacement work can perform the work of attaching / detaching / handling the part in an easy posture.
  • the plasma generator since the structure and mounting method of components are complicated, the plasma generator has the following advantages: the device is kept in a horizontal position, there is no need to worry about dropping components, and the components can be handled in an easy manner. It is big.
  • the power supply portion to the coil and the plasma generator is configured to be separable from the upper wall portion by using a detachable connection portion.
  • FIG. 1 is a schematic diagram of an embodiment in which the present invention is applied to a plasma etching apparatus of a magnetic field UHF band electromagnetic wave radiation discharge system.
  • FIG. 2 is a schematic diagram illustrating a maintenance method in the plasma etching apparatus according to the present embodiment.
  • FIG. 3 is a schematic diagram illustrating a maintenance method in the plasma etching apparatus according to the present embodiment.
  • FIG. 4 is a schematic diagram illustrating a maintenance method in the plasma etching apparatus according to the present embodiment.
  • FIG. 5 is a diagram showing connection of the introduction terminals in the plasma etching apparatus according to the present embodiment.
  • FIG. 6 is a diagram showing details of connection of the introduction terminals in FIG. FIG.
  • FIG. 7 is a schematic view schematically showing a state during a maintenance operation in the plasma etching apparatus according to the present embodiment.
  • FIG. 8 is a schematic diagram schematically showing a state during maintenance work in a conventional plasma etching apparatus.
  • FIG. 9 is a schematic view showing an embodiment in which a vacuum container having a full flat open structure of the present invention is mounted on a plasma processing apparatus system.
  • FIG. 10 is a diagram showing one embodiment of a hinge mechanism of the plasma processing apparatus of the embodiment of FIG.
  • FIG. 11 is a diagram showing an embodiment in which the present invention is applied to a RIE device using a magnetic field (for example, a magnetron RIE device).
  • FIG. 12 is a diagram showing an example in which the present invention is applied to a parallel plate type plasma processing apparatus.
  • Figure 1 of the present invention which shows an embodiment applied to a plasma Etsuchi ring system magnetic field UHF band electromagnetic wave radiation discharge type, the processing chamber 1 0 0, a vacuum degree of about 1 0- 6 T 0 rr A vacuum vessel that can be achieved and emits electromagnetic waves And a lower electrode 130 on which a sample W such as a wafer is placed.
  • the antenna 110 and the lower electrode 130 are installed in parallel and opposed to each other.
  • a magnetic field forming means 101 composed of, for example, an electromagnetic coil and a yoke is provided. Then, by the interaction between the electromagnetic wave radiated from the antenna 110 and the magnetic field formed by the magnetic field forming means 101, the processing gas introduced into the processing chamber is turned into plasma, and the plasma P is generated. Process sample W.
  • the processing chamber 100 is evacuated to vacuum by a vacuum exhaust system 106 connected to the vacuum chamber 105, and the pressure is controlled by a pressure control means 107.
  • the vacuum chamber 105 is at ground potential.
  • a side wall inner unit 103 is installed so as to be exchangeable, and the heat medium is circulated and supplied from the heat medium supply means 104, so that the temperature of the inner surface is increased. Is controlled in the range of 0 ° C to 100 ° C, preferably in the range of 20 ° C to 80 ° C, with an accuracy within ⁇ 10 ° C. Alternatively, it may be controlled by a heater heating mechanism and a temperature detecting means. It is preferable that the side walls 1 and 2 and the side wall inner unit 103 are made of aluminum, for example, and that the surface be subjected to a surface treatment such as alumite having plasma resistance.
  • the antenna 110 includes a disc-shaped conductor 111, a dielectric plate 112, and a dielectric ring 113, and is held in a housing 114 as a part of a vacuum vessel.
  • a plate 115 is provided on the surface of the disk-shaped conductor 111 which is in contact with the plasma, and an outer peripheral ring 116 is provided outside the plate.
  • the temperature of the disc-shaped conductor 111 is adjusted by temperature control means (not shown), and the surface temperature of the plate 115 in contact with the disc-shaped conductor 111 is controlled.
  • the processing gas for etching the sample is supplied from the gas supply means 117 with a predetermined flow rate and mixing ratio, and a large number of gases provided on the disc-shaped conductor 111 and the plate 115 are provided. It is supplied to the processing chamber 100 through the hole.
  • the plate 1 1 5 and the outer ring 1 1 6 For example, silicon or carbon is used for the plate 1 1 5 and the outer ring 1 1 6
  • quartz or alumina is preferably used.
  • the plate 115 is made of silicon
  • the outer ring 116 is made of quartz.
  • the antenna 110 is attached to the side wall 102 by a hinge 118, and is separated from the side wall 102 at a portion indicated by an arrow A and is lifted upward, so that the horizontal direction of the hinge 118 is substantially horizontal. It can be opened up to approximately 180 degrees (the position shown by the broken line in the figure) by rotating it as shown by the arrow (1) with the rotation axis installed at the fulcrum as a fulcrum.
  • the magnetic field forming means 101 is moved upward in advance as indicated by the arrow, and is retracted to a position where it does not interfere with the antenna and does not hinder maintenance.
  • the antenna 110 has an antenna power supply system 120 as an antenna power supply system 120, an antenna bias power supply 122, and a matching circuit 'filter system 123 and 124, respectively. It is connected by the lead-in terminal 126, and is also connected to the ground through the filter 125.
  • the antenna power supply 121 supplies power in the UHF band frequency from 300 MHz to 1 GHz. In the present embodiment, the frequency of the antenna power supply 121 is set to 450 MHz.
  • the antenna bias power supply 122 applies bias power to the antenna 110 with a frequency in the range of several 10 KHz to several 10 MHz. In this embodiment, the frequency is 13.56 MHz.
  • the distance between the lower surface of the plate 115 and the wafer W (hereinafter referred to as a gap) is 30 to 150 mm, preferably 50 to 120 mm.
  • a lower electrode 130 is provided below the processing chamber 100 so as to face the antenna 110.
  • the lower electrode 130 is provided with a bias power supply 141 that supplies a bias power in a range of, for example, 400 KHZ to 13.56 MHz. It is connected via a circuit and filter system 142 to control the bias applied to the sample W, and is connected to the ground via the filter 144.
  • the frequency of the bias power supply 141 is 800 kHz.
  • the lower electrode 130 holds and holds a sample W such as a wafer on its upper surface, that is, a sample mounting surface, by the electrostatic suction device 131.
  • the electrostatic attraction device 1 3 1 has an electrostatic attraction film formed on the surface, and a DC voltage of several 100 V to several KV from the DC power supply 14 4 for electrostatic attraction and the filter 14 5 By applying a voltage, the sample W is adsorbed and held on the lower electrode 130 by the electrostatic adsorption force.
  • a forcing sling 13 made of, for example, silicon is provided on the upper surface of the electrostatic chuck 13 1 and on the outer side of the sample W. Insulated.
  • An outer electrode cover 134 is provided outside the electrode.
  • alumina or quartz for the insulator 133 and the electrode outer cover 134. Furthermore, a lower cover 135 is provided on the inner surface of the lower part of the processing chamber.
  • the plasma etching apparatus according to the present embodiment is configured as described above, and a specific process when etching a silicon oxide film using the plasma etching apparatus will be described with reference to FIG.
  • the wafer W to be processed is loaded into the processing chamber 100 from a sample loading mechanism (not shown), and then placed and sucked on the lower electrode 130, and if necessary, The height of the lower electrode is adjusted to set a predetermined gap.
  • gases necessary for the etching process of the sample W for example, C 4 F 8, Ar, and 02 are put into the processing chamber 100 from the gas supply means 117 through the plate 115 to the processing chamber 1. It is supplied to 00.
  • the processing chamber 100 is adjusted by the evacuation system 106 to a predetermined processing pressure.
  • electromagnetic waves are radiated by power supply of 450 MHz from the antenna power supply 121.
  • an electron cyclotron magnetic field of 160 Gauss 450 MHz is formed inside the processing chamber 100 by the magnetic field forming means 101.
  • Plasma P is generated in the processing chamber 100 by the interaction with the substantially horizontal magnetic field (intensity), and the processing gas is dissociated to generate ions and radicals.
  • the wafer W is etched by controlling ions and radicals with the antenna bias power from the antenna bias power supply 122 and the bias power from the bias power supply 141 from the lower electrode. Then, along with the end of the etching process, the supply of the electric power, the magnetic field and the processing gas is stopped to end the etching.
  • the etching of the wafer by the plasma processing apparatus in the present embodiment is performed as described above. As the treatment process is repeated, the reaction products gradually accumulate in the treatment chamber, and foreign substances are generated due to the separation of the deposited film. When the number of foreign substances exceeds a certain management standard (for example, 0.2 foreign substances and 20 wafers or less), the processing chamber is opened to the atmosphere and jet cleaning is performed.
  • a certain management standard for example, 0.2 foreign substances and 20 wafers or less
  • FIG. 2 is a perspective view schematically showing a main part of the plasma etching apparatus shown in FIG. 1 in order to show a state of maintenance according to the present invention, and a part thereof is shown in cross section.
  • the antenna 110 is mounted on the side wall 102 mounted on the vacuum chamber 105, the magnetic field forming means 101 is set around the antenna 110, and the introduction terminal 1 2 is connected to the antenna 110.
  • the antenna power supply system 120 is connected via 6.
  • the processing chamber 100 and the vacuum chamber 105 are opened to the atmosphere, and the connection of the introduction terminals 126 connecting the antenna 110 and the antenna power supply system 120 is released.
  • the next step is shown in Fig. 4, and as shown by arrows (5) and (6), remove the side wall inner unit 103 and the lower cover 135 by pulling them upward. Also, for the lower electrode, remove the focus ring 13 2 and the outer electrode cover 1 3 4. The removed parts are subjected to processes such as removal of deposited film, ultrasonic cleaning and drying. Then, install the components in the reverse order to the above, restore the device to its original state, and evacuate.
  • the work of replacing parts is improved by improving the workability of wet cleaning by improving the workability of wet cleaning, such as fixing the vacuum flange with a clamp without using bolts.
  • the equipment downtime Good Wafer to Good Wafer
  • the operation confirmation such as vacuum pumping and foreign matter and rate check. Is secured.
  • the antenna 110 is rotated around the axis of the hinge 118 to open, so that the entire antenna 110 is lifted up from the processing chamber and removed. And the burden of lifting heavy objects is not imposed on the operator.
  • silicon When removing the plate 1 15 and the quartz ring 1 16 that are made of glass, it is only necessary to lift them upward as shown by arrows (3) and (4) in Fig. 4 for good workability. Therefore, work efficiency can be increased and the possibility of damage to parts is reduced.
  • the antenna power supply system 120 above the processing chamber is detachably connected to the antenna 110 at the introduction terminal 126 so that coupling and separation can be easily performed. Therefore, it is possible to open the antenna 110 to a substantially horizontal position.
  • the introduction terminals 126 have a structure in which the inner hot-side terminal for supplying power and the outer ground are insulated. When the connection of the lead-in terminals 126 is released, the inner hot-side terminal of the antenna 110 is brought into contact with the outer ground part using a simple mechanism such as a ground wire or a spring.
  • the antenna 110 may be charged by the refrigerant circulating inside due to friction with the inner wall surface of the coolant channel, but even if the antenna is charged by connecting the antenna to the ground, The safety is ensured even if the worker accidentally touches the hot side terminal by releasing it.
  • the antenna power supply system 120 and the antenna 110 are provided with lead-in terminals 1 26 to facilitate coupling and separation.
  • the antenna power supply system 120 and the magnetic field forming means 101 can move up and down integrally.
  • the antenna power supply system 120 and the antenna 110 are disconnected by releasing the connection of the introduction terminals 126 and moving the antenna power supply system 120 and the magnetic field forming means 101 upward together. It is possible to separate.
  • the antenna power supply system 120 and the magnetic field forming means 101 are lowered integrally in order to connect the introduction terminals 126. Terminals 1 and 6 must be connected smoothly with good reproducibility. Therefore, the relative positions of the magnetic field forming means 101 and the antenna 110 are determined by the positioning mechanism 127.
  • the positioning mechanism 127 a vertical bar 110A installed on the antenna 110 and a sleeve 101A installed on the magnetic field forming means 101 are used.
  • the antenna power supply system 120 and the magnetic field forming means 101 are integrated and lowered, a plurality of sets of vertical bars 11A and sleeves 10A position each other.
  • the central axes of the antenna 110 and the magnetic field forming means 101 coincide exactly. As a result, it is possible to smoothly perform the reproducibility without deviating from the connection and connection at the introduction terminals 126 described below.
  • the introduction terminals 126 have a structure to which a coaxial tube for transmitting UHF band electromagnetic waves is connected.
  • the antenna power supply system 120 and the magnetic field forming means 101 are lowered, the center conductors 12 OA and 11 OA are combined and coupled, and at this time, a position sensor (not shown) detects the stop position. The descent stops. Then, the shields 120 B and 110 B are connected to each other by a connection unit 128 on the outside thereof.
  • connection unit 128 is released by releasing the clamp 128A and rotating around the hinge 128B as a center axis. It has a structure that can be divided into R.
  • the left and right united units 128R and 128R have semicircular inner surfaces at the center of each unit, and the left and right semicircular The part becomes round and becomes circular, and the earth shields 120B and 11OB shown in Fig. 5 are attached to this part. Fix it so that it indents.
  • the units 128 L and 128 R have the following characteristics in order to secure contact with the ground shields 120 B and 11 ⁇ B and to prevent leakage of UHF band electromagnetic waves.
  • Electromagnetic shields 128 C are installed on the contact surfaces of each other and the semicircular upper and lower parts. As the electromagnetic shield 128 C, for example, a wire mesh having cushioning properties, or a more rigid finger or spiral electromagnetic shield member is suitable.
  • a clamp (not shown) is installed inside the clamp 1 28 A, and the interlock is released by fixing the clamp, and the antenna power supply system 1 shown in Fig. 5 is released. It is configured so that 20 inputs can be made. Needless to say, in order to release the interlock, it is necessary to further lower the antenna power supply system 120 and the magnetic field forming means 101 to predetermined positions. These lock-in mechanisms allow workers to forget the connection of the lead-in terminals 126 and the connection unit 128 during wet cleaning. The power supply to the antenna power supply system 120 cannot be turned on by the fin lock mechanism.
  • the antenna itself which is a plasma generator installed above the reactor and supplied with electric power, can be opened and closed.
  • the antenna 110 and the antenna power supply system 120 can be easily coupled and separated.
  • FIG. 7 schematically shows a state of maintenance in a state of a full-flat oven in the plasma etching apparatus of the embodiment shown in FIG.
  • an antenna 110 that emits an electromagnetic wave is attached to a side wall 102 by a hinge 118 that can be opened and closed at approximately 180 degrees.
  • Figure 7 shows that the antenna 110 is opened at about 180 degrees and the outer ring 1116 of the antenna 110 is in the full flat open state where the inside of the antenna is almost horizontal with the inside facing up. It is about to remove the inner plate 1 15.
  • the outer peripheral ring 116 is a quartz ring
  • the plate 115 is a silicon shaped plate having a large number of gas holes, all of which are broken or broken. They are crisp and expensive parts.
  • the antenna 110 to which these are attached substantially horizontal the operator M can attach and handle these parts in an easy posture from above.
  • the part is held in a substantially horizontal position, that is, in a physically stable state by friction or by a locking portion, and the part is supported. No need.
  • the opening direction of the antenna 110 is set to the direction toward the worker in the maintenance area, the antenna 110 is held at a position easily accessible to the worker, so that the worker is stable. Work can be performed in a posture that has been adjusted. Needless to say, there is no need for co-workers since the parts can be replaced by one person.
  • FIG. 8 shows a case where maintenance is performed in the present embodiment with the processing chamber approximately upright at an opening and closing angle of approximately 90 degrees as in the prior art. Show.
  • To remove the quartz outer ring 1 16 ⁇ silicon plate 1 15 remove the mounting screws and the parts will come off. For this reason, the worker M has to remove the mounting screws while holding down the part with one hand, and it cannot be said that the workability is good. Not only that, they can even slip parts down. Or, when mounting parts, excessive force is applied to the screw holes, and the parts are likely to be damaged. Expensive and fragile quartz and silicon parts can be damaged, giving workers a feeling of psychological pressure.
  • FIG. 9 is a plan view of another embodiment of the present invention, in which a vacuum vessel having a full flat open structure is mounted on a plasma processing system, as viewed from above.
  • This equipment is equipped with two plasma processing chambers E 1 and E 2, and the sample wafer is transferred from the mouth mechanism 15 1 through the load lock chamber 15 2 to the buffer chamber 15 3, and the sample is transferred. It is transferred to the plasma processing chambers E 1 and E 2 by the mechanism 154.
  • the plasma processing chamber E 1 is in a state where the apparatus is assembled, and a magnetic field forming means 101 and an antenna power supply system 120 are mounted on a vacuum chamber 105.
  • the plasma processing chamber E 2 is in the state of performing wet cleaning, and The inside of the room 100 is open to the atmosphere, and the antenna 110 is placed in a full flat state by the hinge 118.
  • the magnetic field forming means 101 and the antenna power supply system 120 are retracted to a position where they do not hinder the work.
  • the antenna 110 is oriented in the direction of the worker M (outside the base frame 150) in the maintenance area (in this case, the maintenance area is about 80 cm wide around the device).
  • the worker M can easily perform maintenance work because it is shaped so that about half of the base frame 150 protrudes from the base frame 150 of the system. Also, the antenna 110 does not excessively protrude into the maintenance area, and does not occupy extra space in the clean room.
  • the clean room is an expensive space because the cleanliness is maintained by down flow. For this reason, it is necessary not only to reduce the floor occupied area (footprint) in the operating state, but also to install the equipment with as small an interval as possible. For this reason, the mass production factory actually provides only the minimum required space for maintenance and traffic around the equipment, for example, a width of about 80 cm.
  • the fact that the reactor is confined to at most half of the maintenance time, that is, only about several tens of cm at the time of maintenance, as in the present embodiment, is equivalent to mass production equipment in view of the efficient use of the clean room space. It is desirable.
  • the entire wafer stage is moved by the elevating mechanism and the horizontal moving mechanism, or in the known example 4, the exhaust chamber is rotated by the elevating mechanism and the rotating mechanism.
  • Such a mechanism becomes large-scale, or during maintenance, the moving mechanism protrudes around the device, and the compactness of the entire device is lost.
  • a heating medium for controlling the temperature of the disk-shaped conductor 111 is supplied to the antenna 110.
  • the antenna 110 is set to the full flat open state in which the antenna 110 is opened 180 degrees, if the supply path of the heat medium (for example, a hose) is detached and connected at a connection portion such as a connector, the connector is not connected. Refrigerant may leak from one part, and extra work time is required.
  • the antenna part is repeatedly closed to 180 degrees, the hose that supplies the heat medium is greatly bent, and the hose is repeatedly bent, which may result in damage to the hose. is there.
  • FIG. 10 shows an embodiment of such a hinge mechanism.
  • FIG. 10 is a cross-sectional view of the structure of the hinge 118 that can be opened and closed at approximately 180 degrees in the plasma processing apparatus of the embodiment of FIG. 18 is viewed from above with 180 degrees open.
  • a support portion 162 is attached to the housing 114 of the antenna 100, and is fixed to the shaft 163 by a locking member 1664 such as a set screw.
  • the shaft 163 is rotatably mounted on a hinge mounting portion 161, which is mounted on the side surface of the side wall 102.
  • the shaft 163 is axially moved by a locking member 1665 such as a retaining ring. Are restrained, the mutual positional relationship is determined.
  • the heat medium flows from the universal joint 16 A, which can rotate around the shaft of the shaft 16 3, through the flow path 16 7 A provided in the shaft, and the flow path 16 inside the antenna housing 1 14 Flow through 8 A, flow through 1 6 8 B, 1 6 7 B, 1 6 6 Emitted from B.
  • the passage of the heat medium is sealed by a “sealing” sealing member 169 so that the heat medium does not leak.
  • a refrigerant such as, for example, Linnaut (trade name) and set the temperature at about 30 ° C. to 80 ° C.
  • the present embodiment when opening and closing the antenna unit, it is not necessary to detach the connector for connecting the heat medium, so that leakage of the refrigerant from the seal portion of the connector can be prevented, and the reliability of the operation is improved. And work time can be reduced.
  • the plasma processing apparatus of the magnetic field emission UHF band electromagnetic wave radiation discharge method was used, but the emitted electromagnetic waves were not limited to the UHF band, and for example, a 2.45 GHz microwave was used. It may be a wave or a VHF band from about 10 MHz to about 300 MHz.
  • the magnetic field strength was described in the case of 160 gauss, which is the electron cyclotron resonance magnetic field strength for 450 MHZ.However, it is not always necessary to use a resonance magnetic field, and a stronger magnetic field or vice versa.
  • a weak magnetic field of several tens Gauss or less may be used.
  • a non-magnetic field microwave discharge that does not use a magnetic field may be used.
  • a magnet-type plasma processing apparatus using a magnetic field for example, a parallel plate type capacitively-coupled plasma processing apparatus, or an inductively-coupled plasma processing apparatus, etc. Embodiments can be applied.
  • FIG. 11 shows that the present invention relates to a RIE device (for example, magnetron) using a magnetic field.
  • RIE device for example, magnetron
  • the processing chamber 100 as a vacuum vessel includes a side wall 102, a lower electrode 130 on which a sample W such as a wafer is placed, and an upper electrode grounded opposite thereto.
  • a power source 205 and a magnetic field generating means 204 for generating a magnetic field in the vacuum vessel are provided.
  • the raw means 204 has a plurality of permanent magnets or coils arranged in a ring shape on the outer circumference or upper side of the processing chamber 100, and forms a magnetic field substantially parallel to the electrodes inside the processing chamber.
  • the magnetic field can be rotated by giving a gradient.
  • the processing gas is converted into a plasma by an electric field generated between the electrodes by the electric power supplied from the lower power supply 205, plasma P is generated, and the sample W is processed.
  • a magnetic field is generated in a direction substantially orthogonal to the electric field by the magnetic field generating means 204, so that the frequency of collision between electrons and molecules and atoms in the plasma is reduced by the magnetic field or magnetron.
  • the frequency of the lower power source 205 is preferably in the range of a low frequency band of about 100 KHz to about 10 MHZ to a high frequency band.
  • the upper electrode 200 is provided with a plate 202 having a large number of gas holes formed on an electrode plate 201 grounded to the ground, and is covered by an outer ring 203.
  • the plate 202 is preferably made of silicon or carbon, or may be made of anodized aluminum.
  • the upper electrode 200 is attached to the side wall 102 by a hinge 118. Then, it is separated from the side wall 102 at the portion indicated by the arrow A and lifted upward, and is rotated about the approximately horizontal support axis of the hinge 118 as a fulcrum. (The position indicated by the broken line).
  • FIG. 12 shows an example in which the present invention is applied to a parallel plate type plasma processing apparatus.
  • the processing chamber 100 as a vacuum vessel is constituted by a side wall 102, a lower electrode 130 on which a sample W such as a wafer is placed, and an upper electrode 210 opposed thereto. It further comprises a gas supply means 117 for introducing a predetermined gas into the vacuum vessel, and a vacuum evacuation system 106 for evacuating the vacuum vessel. Then, an electric field is generated between the electrodes by electric power supplied from the upper power supply 2 21 to the upper electrode 2 10, the processing gas is turned into plasma, and the plasma P is generated to process the sample W.
  • the upper electrode 210 is held by the housing 214 with the electrode plate 211 insulated by insulators 212,213. Further, a plate 2 15 is provided on the surface of the electrode plate 2 11 in contact with the plasma, and a seal ring 2 16 is provided on the outer periphery thereof.
  • the shield ring 2 16 protects the insulators 2 1 2 and 2 1 3 from the plasma and, at the same time, forms a pair with the focus ring 13 2 so that the plasma P is sealed in the processing chamber 100. Improve plasma density and obtain high etching characteristics.
  • silicon or carbon is preferably used for the plate 215, and quartz or alumina is preferably used for the shield ring 216, for example.
  • the frequency of the upper power supply 222 is preferably in a VHF band exceeding approximately 100 MHz from a high frequency band of approximately 100 MHz.
  • the electrode plate 211, the matching circuit, the filter system 223, and the filter 225 are kept as short as possible. It is desirable that they be connected and securely connected using a copper plate or copper pipe. Therefore, in the case of the present embodiment, a matching box 220 in which a small-sized and lightweight matching circuit using a switching circuit by a diode and a filter system 222 are integrated with the upper electrode 2 is used.
  • a matching box 220 in which a small-sized and lightweight matching circuit using a switching circuit by a diode and a filter system 222 are integrated with the upper electrode 2 is used.
  • At the top of 10 It is configured to be directly mounted and connected to the upper power supply 221 via the connection terminal 226.
  • the upper electrode 210 is attached to the side wall 102 by the hinge 118, and is separated from the side wall 102 at the portion indicated by the arrow A and lifted upward, so that the hinge 118 It is configured so that it can be rotated about a substantially horizontal support shaft as a fulcrum.
  • the size of the matching circuit and the filter and the filter mounted on the upper electrode are made smaller and lighter so that they can be removed from the upper electrode without removing them. It is possible to set the angle of 2 1 to an opening angle of 16.5 degrees or 1800 degrees, that is, within 15 degrees from the horizontal plane.
  • the upper power supply 2 21 is configured to be separable by the connection terminal 2 26.
  • the high-efficiency, compact and lightweight upper power supply 2 21 is mounted directly on the upper electrode 210. You may. In this case, it is possible to open the opening angle to about 150 to 180 degrees, that is, to within 30 degrees from the horizontal plane, and replace the plate 2 15 and the insulator 2 16 It can be done efficiently and safely.
  • the processing target is a semiconductor wafer.
  • the present invention is not limited to this.
  • the present invention can be applied to a case where a processing target is a liquid crystal substrate, and the processing itself is not limited to etching. For example, sputtering or CVD processing is performed. It is also applicable to
  • a part of the vacuum chamber constituting the processing chamber is configured as an openable and closable part, and the openable and closable part is arranged so that the processing chamber is directed upward and friction is caused in a state where components are almost horizontal. Or a physically stable state by the locking portion.
  • the upper part of the processing chamber is set as the maintenance work area, the worker can easily access the processing chamber, and the maintenance work can be performed in an easy posture from above.
  • workers can easily handle parts during maintenance and workability is improved, so that a plasma processing apparatus with excellent maintainability and ease of use can be realized. It is possible to provide a plasma processing apparatus that contributes to improvement in performance.

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  • Engineering & Computer Science (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)

Abstract

L'invention concerne un appareil de traitement au plasma et un procédé de traitement au plasma, le remplacement des pièces et l'entretien pouvant facilement être réalisés dans une chambre de traitement. L'appareil de traitement au plasma comprend un récipient sous vide comportant une chambre (100) de traitement, des dispositifs de génération de plasma permettant de produire du plasma dans la chambre et des électrodes destinées à servir de support aux échantillons traités dans la chambre. Dans l'appareil selon l'invention, la paroi supérieure de la chambre est un segment d'ouverture/fermeture et au moins un (110) composant du dispositif de génération de plasma comportant un élément cassant non métallique est disposé sur le segment d'ouverture/fermeture. On peut stabiliser le segment d'ouverture/fermeture avec le côté intérieur vers le haut en tournant au moins une partie de la paroi supérieure constituant le côté supérieur de la chambre autour d'une tige généralement horizontale. Le côté intérieur du segment d'ouverture/fermeture se trouve dans un angle inférieur à 30 degrés par rapport au plan horizontal, le composant étant en suspens, lorsque le segment d'ouverture/fermeture est ouvert.
PCT/JP2000/001590 1999-03-17 2000-03-16 Appareil de traitement au plasma et son procede d'entretien WO2000055894A1 (fr)

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KR1020017011655A KR20010112324A (ko) 1999-03-17 2000-03-16 플라즈마처리장치 및 그 메인티넌스방법

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JP07257799A JP3205312B2 (ja) 1999-03-17 1999-03-17 プラズマ処理装置及びプラズマ処理装置のメンテナンス方法
JP11/72577 1999-03-17

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JP3424280B2 (ja) 1993-09-24 2003-07-07 エヌオーケー株式会社 膜状合成ゼオライトの製造法
JP4837163B2 (ja) * 2000-07-27 2011-12-14 株式会社アルバック スパッタリング装置
JP3591642B2 (ja) * 2001-02-07 2004-11-24 株式会社日立製作所 プラズマ処理装置
EP1371751B1 (fr) 2001-02-09 2011-08-17 Tokyo Electron Limited Dispositif de formation de pellicule mince
JP4782761B2 (ja) * 2001-02-09 2011-09-28 東京エレクトロン株式会社 成膜装置
JP4513329B2 (ja) * 2004-01-16 2010-07-28 東京エレクトロン株式会社 処理装置
JP4246654B2 (ja) * 2004-03-08 2009-04-02 株式会社日立ハイテクノロジーズ 真空処理装置
KR100688954B1 (ko) 2005-09-16 2007-03-02 주식회사 아이피에스 플라즈마 처리장치의 개폐구조
JP4704088B2 (ja) * 2005-03-31 2011-06-15 東京エレクトロン株式会社 プラズマ処理装置
JP4624856B2 (ja) 2005-05-30 2011-02-02 東京エレクトロン株式会社 プラズマ処理装置
JP4642608B2 (ja) * 2005-08-31 2011-03-02 東京エレクトロン株式会社 基板処理装置および基板処理システム
JP4840127B2 (ja) * 2006-12-21 2011-12-21 パナソニック株式会社 プラズマエッチング装置
KR101440786B1 (ko) * 2008-07-30 2014-09-24 참엔지니어링(주) 플라즈마 처리 장치
KR101022780B1 (ko) * 2008-11-18 2011-03-17 세메스 주식회사 기판 처리 장치
KR101312505B1 (ko) * 2010-12-10 2013-10-01 엘아이지에이디피 주식회사 안테나 높이 조절이 가능한 기판처리장치
CN103477721B (zh) 2011-04-04 2016-05-18 佳能安内华股份有限公司 处理装置
US8826857B2 (en) 2011-11-21 2014-09-09 Lam Research Corporation Plasma processing assemblies including hinge assemblies
US9530626B2 (en) * 2014-07-25 2016-12-27 Tokyo Electron Limited Method and apparatus for ESC charge control for wafer clamping
JP6491891B2 (ja) * 2015-01-23 2019-03-27 株式会社日立ハイテクノロジーズ 真空処理装置
JP7169786B2 (ja) * 2018-06-25 2022-11-11 東京エレクトロン株式会社 メンテナンス装置

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JPH07331445A (ja) * 1994-06-01 1995-12-19 Tokyo Electron Ltd 処理装置及び該処理装置に用いられるカバー体の洗浄方法
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JPH11140648A (ja) * 1997-11-07 1999-05-25 Tokyo Electron Ltd プロセスチャンバ装置及び処理装置

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