JP4246654B2 - 真空処理装置 - Google Patents
真空処理装置 Download PDFInfo
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- JP4246654B2 JP4246654B2 JP2004064618A JP2004064618A JP4246654B2 JP 4246654 B2 JP4246654 B2 JP 4246654B2 JP 2004064618 A JP2004064618 A JP 2004064618A JP 2004064618 A JP2004064618 A JP 2004064618A JP 4246654 B2 JP4246654 B2 JP 4246654B2
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- 238000012545 processing Methods 0.000 title claims description 343
- 238000012546 transfer Methods 0.000 claims description 95
- 238000000034 method Methods 0.000 description 62
- 230000008569 process Effects 0.000 description 61
- 239000007789 gas Substances 0.000 description 58
- 235000012431 wafers Nutrition 0.000 description 48
- 238000012423 maintenance Methods 0.000 description 27
- 238000005530 etching Methods 0.000 description 26
- 230000002093 peripheral effect Effects 0.000 description 23
- 238000009434 installation Methods 0.000 description 21
- 238000004380 ashing Methods 0.000 description 15
- 239000003507 refrigerant Substances 0.000 description 15
- 239000012530 fluid Substances 0.000 description 12
- 239000002245 particle Substances 0.000 description 10
- 239000010453 quartz Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000003860 storage Methods 0.000 description 10
- 238000003825 pressing Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- 238000007689 inspection Methods 0.000 description 6
- 230000003993 interaction Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 239000000725 suspension Substances 0.000 description 4
- 239000007795 chemical reaction product Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000001771 impaired effect Effects 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 230000008439 repair process Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009489 vacuum treatment Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
- Y10S414/139—Associated with semiconductor wafer handling including wafer charging or discharging means for vacuum chamber
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Description
上記のように、複数の処理室(プロセスチャンバ)が装置にが隣り合って配置される場合、装置下方の移動ステージを含むガイド機構のために着脱されるユニットの大きさが大きくなり、装置の接地面積が大きくなってしまう。このため装置が設置されるクリーンルーム等のフロア上の設置可能な台数が低くなり、複数台の装置を稼働して製品を製造する場合の製造効率が低くなってしまうという点については、考慮されていなかった。
本発明の更に別の目的は、稼働効率を向上させた真空処理装置を提供することに有る。
また、本発明によれば、メンテナンスや機器の取り付け、取り外しといった作業が容易な真空処理装置を提供することができる。
さらにまた、稼働効率を向上させた真空処理装置を提供することができる。
102…処理ブロック
103,104…処理ユニット
105…搬送ユニット
106…フレーム
107…制御ユニット
108…筐体
109…ウエハカセット
110…ダミーカセット
111…位置合せ部
113…ロック室
201…接続インターフェース
202…表示部
203…供給路
401,402…制御器
403,404…アクセスドア
500…処理室部
501…プロセスガスライン
502…プロセスガス遮断バルブ
504…試料台
506…試料搬送装置
507…排気バルブ
508…排気ポンプ
509,510…内側チャンバ
511,512…外側チャンバ
513…プロセスゲートバルブ
514…大気ゲートバルブ
515…大気開放バルブ
520…支持梁
521…駆動手段
522…駆動手段
523…支持ベース部材
524…外側蓋
524…外側蓋。
Claims (6)
- 減圧されて試料の処理に用いられるプラズマが形成され処理室をその内側に有する真空容器と、この真空容器の下方に配置され前記真空容器内の処理に用いられる電力または電気信号を供給する装置を収納するベッド部と、その側面が前記真空容器と連結されてその内側に前記試料を運搬するための運搬装置を有する搬送室とを備えた真空処理装置であって、
前記ベッド部の前記搬送室の下方の空間に対向した位置に配置され前記装置が駆動可能に接続されるコネクタを備え、
前記ベッド部が前記コネクタでの接続を着脱して前記真空処理装置から脱着可能に構成された真空処理装置。 - 減圧されて試料の処理に用いられるプラズマが形成され処理室をその内側に有する真空容器と、この真空容器の下方に配置され前記真空容器内の処理に用いられる電力または電気信号を供給する装置を収納するベッド部と、その側面が前記真空容器と連結されてその内側に前記試料を運搬するための運搬装置を有する搬送室とを備えた真空処理装置であって、
前記ベッド部に取り付けられ前記電力または電気信号を供給する装置を収納してこのベッド部から略水平に引出或いは格納される引出し部を備えた真空処理装置。 - 請求項1に記載の真空処理装置であって、
前記ベッド部が略直方体の形状を有し、前記コネクタが前記ベッド部の前記搬送室下方に面し左右いずれかに偏らせて配置された真空処理装置。 - 請求項1または3に記載の真空処理装置であって、
前記コネクタが前記搬送室の下方に配置された配線または配管と接続される真空処理装置。 - 請求項2に記載の真空処理装置であって、
前記ベッド部内に収納され前記引出し部内に搭載された装置と前記引出し部外に配置された装置とを接続して前記引出し部が引き出された際に両者を繋ぐ長さを有するケーブルを備えた真空処理装置。 - 請求項2または5に記載の真空処理装置であって、
前記引出し部が前記ベッド部に対して取り外しまたは取り付け可能な真空処理装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004064618A JP4246654B2 (ja) | 2004-03-08 | 2004-03-08 | 真空処理装置 |
US10/928,368 US7585383B2 (en) | 2004-03-08 | 2004-08-30 | Vacuum processing apparatus |
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---|---|---|---|
JP2004064618A JP4246654B2 (ja) | 2004-03-08 | 2004-03-08 | 真空処理装置 |
Publications (2)
Publication Number | Publication Date |
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JP2005246350A JP2005246350A (ja) | 2005-09-15 |
JP4246654B2 true JP4246654B2 (ja) | 2009-04-02 |
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JP2004064618A Expired - Lifetime JP4246654B2 (ja) | 2004-03-08 | 2004-03-08 | 真空処理装置 |
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US (1) | US7585383B2 (ja) |
JP (1) | JP4246654B2 (ja) |
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