KR100891403B1 - 반도체 발광 소자 및 그 제조 방법과 그것을 이용한 발광장치 - Google Patents
반도체 발광 소자 및 그 제조 방법과 그것을 이용한 발광장치 Download PDFInfo
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- KR100891403B1 KR100891403B1 KR1020057001748A KR20057001748A KR100891403B1 KR 100891403 B1 KR100891403 B1 KR 100891403B1 KR 1020057001748 A KR1020057001748 A KR 1020057001748A KR 20057001748 A KR20057001748 A KR 20057001748A KR 100891403 B1 KR100891403 B1 KR 100891403B1
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- UQMZPFKLYHOJDL-UHFFFAOYSA-N zinc;cadmium(2+);disulfide Chemical compound [S-2].[S-2].[Zn+2].[Cd+2] UQMZPFKLYHOJDL-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
Claims (50)
- 기판 상에, 상호 분리된 발광 영역으로 되는 적층부를 복수 갖고,상기 적층부는, 저면측의 n형 반도체층을 포함하는 질화물 반도체층과 그 보다 상면측에 p형 반도체층을 포함하는 질화물 반도체층이 적층되어 이루어지고, 상기 적층부의 측면은 상기 n형 반도체층의 표면을 포함하는 경사면이며,상기 적층부는, 상기 적층부 저면측의 n형 반도체층에 형성된 n전극을 갖고,상기 n 전극이, 인접하는 상기 적층부 사이에 접속되도록 상기 경사면의 n형 반도체층의 표면과 기판 표면에 걸쳐 형성되는 질화물 반도체 발광 소자.
- 제1항에 있어서,상기 경사면은, 외측으로 팽창된 볼록 곡면인 질화물 반도체 발광 소자.
- 제1항 또는 제2항에 있어서,상기 n 전극은 상기 적층부를 둘러싸도록 형성되는 질화물 반도체 발광 소자.
- 제1항에 있어서,상기 적층부를 원형, 육각형 또는 사각형으로 한 질화물 반도체 발광 소자.
- 제1항에 있어서,상기 각 적층부에 형성된 n 전극은, 상호 접속된 공통 전극으로서 형성되고, 상기 공통 전극의 일부에 n 접속 패드부가 형성되는 질화물 반도체 발광 소자.
- 제1항에 있어서,상기 n 전극에 n 접속 패드부가 형성되고, 상기 n 접속 패드부가 인접하는 적층부 사이의 기판 상에 형성되는 질화물 반도체 발광 소자.
- 제6항에 있어서,상기 적층부의 표면에서 상기 p형 반도체층과 오믹 접촉하는 p측 오믹 전극이 형성되고, 상기 p측 오믹 전극이 상호 접속되는 질화물 반도체 발광 소자.
- 제1항에 있어서,상기 적층부를 피복하도록 반사층을 형성하는 질화물 반도체 발광 소자.
- 제8항에 있어서,상기 반사층은 상기 적층부를 피복하도록 절연막을 개재하여 금속층을 형성함으로써 형성되는 질화물 반도체 발광 소자.
- 제9항에 있어서,상기 금속층은, 상기 적층부의 p형 반도체층에 각각 형성된 p측 오믹 전극을 접속하는 접속 전극인 질화물 반도체 발광 소자.
- 제8항에 있어서,상기 반사층은 유전체 다층막으로 이루어지는 질화물 반도체 발광 소자.
- 제10항 또는 제11항에 있어서,상기 경사면의 경사각 α가 60도 이하인 질화물 반도체 발광 소자.
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EP2290715B1 (en) | 2019-01-23 |
US20080251808A1 (en) | 2008-10-16 |
KR20080077294A (ko) | 2008-08-21 |
CN100358163C (zh) | 2007-12-26 |
US7511311B2 (en) | 2009-03-31 |
CN100595937C (zh) | 2010-03-24 |
US20120025256A1 (en) | 2012-02-02 |
CN1672271A (zh) | 2005-09-21 |
KR101095753B1 (ko) | 2011-12-21 |
KR20050026551A (ko) | 2005-03-15 |
US8742438B2 (en) | 2014-06-03 |
KR101052139B1 (ko) | 2011-07-26 |
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