CN105575951B - 高压发光二极管及其制作方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title abstract description 8
- 238000003475 lamination Methods 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 10
- 239000011241 protective layer Substances 0.000 claims description 65
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- 238000004020 luminiscence type Methods 0.000 description 6
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- 239000003292 glue Substances 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910017083 AlN Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
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- 229910052594 sapphire Inorganic materials 0.000 description 2
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- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
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Abstract
一种高压发光二极管及其制作方法,包括:提供衬底,并在所述衬底上形成发光外延叠层;图形化所述发光外延叠层并制作沟道直至裸露出衬底表面,从而将发光外延叠层分隔为多个发光二极管单元,且所述发光二极管单元至少组成两个行列;制作电极互联线,横跨于所述沟道上,相邻的两个发光二极管单元通过所述电极互联线连接;制作电极焊盘,形成于所述高压发光二极管的最***的发光二极管单元上;其特征在于:在所述任意相邻的两个发光二极管电势差≥单个发光二极管的正向电压3倍的沟道处设置绝缘保护层开口,用于避免绝缘保护层被介电击穿时产生的热量诱使发光外延叠层被击穿。
Description
技术领域
本发明涉及一种高压发光二极管结构及其制作方法。
背景技术
发光二极管(英文为Light Emitting Diode,简称LED)是半导体二极管的一种,它能将电能转化为光能,发出黄、绿、蓝等各种颜色的可见光及红外和紫外不可见光。与白炽灯泡及氖灯相比,具有工作电压和电流低、可靠性高、寿命长且可方便调节发光亮度等优点。自LED开发成功以来,随着研究不断进展,其发光亮度也不断提高,应用领域也越来越广。
近年来,因应照明需求, 大功率LED已成为各LED厂开发的重点。传统正装大功率LED多以高电流低电压单颗芯片为发光单元,大电流注入下芯片的结温上升进而影响发光效率,近年来国际大厂相继推出集成的高压LED芯片。高压LED芯片是指将多个微芯片通过金属导线串联而成的一种电流小、电压高的LED芯片。它相比于常规低压LED主要有以下几个优点:耗散功率低、电源转换效率高、封装成本低等。但是由于采用多颗微芯粒串联技术,本身芯片工艺变复杂,同时高压LED芯片的可靠性也随之降低。其中高压芯片的抗ESD能力就相对较弱,这一方面跟多颗微芯片串联后发生ESD失效的概率增加有关,同时也跟高压芯片制作过程中所用材料的抗ESD能力有关。
发明内容
针对多串高压芯片在ESD测试中或者在LED封装前的各环节易发生局部ESD击穿/爆点现象,本发明提出一种提升高压发光二极管的ESD耐受力的芯片设计方案。
根据发明的第一个方面,一种高压发光二极管,包括:
衬底和在所述衬底上的发光外延叠层;
所述发光外延叠层具有多个发光二极管单元,且所述发光二极管单元至少组成两个行列,各发光二极管单元之间通过沟道相互隔离;
电极互联线,横跨于所述沟道上,相邻的两个发光二极管单元通过所述电极互联线连接;
电极焊盘,形成于所述高压发光二极管的最***的发光二极管单元上;
其特征在于:在所述任意相邻的两个发光二极管电势差≥单个发光二极管的正向电压3倍的沟道处设置绝缘保护层开口,用于避免绝缘保护层被介电击穿时产生的热量诱使发光外延叠层被击穿。
根据发明的第二个方面,一种高压发光二极管,包括:
衬底和在所述衬底上的发光外延叠层;
所述发光外延叠层具有多个发光二极管单元,且所述发光二极管单元至少组成两个行列,各发光二极管单元之间通过沟道相互隔离;
电极互联线,横跨于所述沟道上,相邻的两个发光二极管单元通过所述电极互联线连接;
电极焊盘,形成于所述高压发光二极管的最***的发光二极管单元上;
其特征在于:所述任意相邻的两个发光二极管单元行列的首、末发光二极管单元相邻,且设置绝缘保护层开口,用于避免绝缘保护层被介电击穿时产生的热量诱使发光外延叠层被击穿。
根据发明的第三个方面,一种高压发光二极管,包括:
衬底和在所述衬底上的发光外延叠层;
所述发光外延叠层具有多个发光二极管单元,且所述发光二极管单元至少组成两个行列,各发光二极管单元之间通过沟道相互隔离;
电极互联线,横跨于所述沟道上,相邻的两个发光二极管单元通过所述电极互联线连接;
电极焊盘,形成于所述高压发光二极管的最***的发光二极管单元上;
波长转换层,作为绝缘保护层,形成于除电极焊盘区域之外的高压发光二极管的表面上;
其特征在于:所述任意相邻的两个发光二极管单元行列的首、末发光二极管单元相邻,且设置绝缘保护层开口,用于避免绝缘保护层被介电击穿时产生的热量诱使发光外延叠层被击穿。
进一步地,所述发光二极管单元从下至上依次包括第一型半导体层、发光层和第二型半导体层。
进一步地,所述发光单元形成可为平行四边形或矩形或正方形或圆形或椭圆形。
进一步地,除了所述任意相邻的两个发光二极管单元行列的相邻的首、末发光二极管单元以及电极焊盘设置绝缘保护层开口,其余发光二极管单元均设置绝缘保护层。
进一步地,所述发光二极管单元行列呈C型或反C型或S型或反S型分布或前述任意组合之一。
进一步地,所述绝缘保护层开口位于所述发光二极管单元的横向沟道和/或纵向沟道。
进一步地,所述绝缘保护层开口呈T型或者呈工字型或呈一字型或前述任意组合之一。
进一步地,所述发光二极管单元的横向沟道或纵向沟道位置的绝缘保护层开口长度为沟道宽度的3倍及以上。
根据发明的第四个方面,一种高压发光二极管的制作方法,包括:
提供衬底,并在所述衬底上形成发光外延叠层;
图形化所述发光外延叠层并制作沟道直至裸露出衬底表面,从而将发光外延叠层分隔为多个发光二极管单元,且所述发光二极管单元至少组成两个行列;
制作电极互联线,横跨于所述沟道上,相邻的两个发光二极管单元通过所述电极互联线连接;
制作电极焊盘,形成于所述高压发光二极管的最***的发光二极管单元上;
其特征在于:在所述任意相邻的两个发光二极管电势差≥单个发光二极管的正向电压3倍的沟道处设置绝缘保护层开口,用于避免绝缘保护层被介电击穿时产生的热量诱使发光外延叠层被击穿。
根据发明的第五个方面,一种高压发光二极管的制作方法,包括:
提供衬底,并在所述衬底上形成发光外延叠层;
图形化所述发光外延叠层并制作沟道直至裸露出衬底表面,从而将发光外延叠层分隔为多个发光二极管单元,且所述发光二极管单元至少组成两个行列;
制作电极互联线,横跨于所述沟道上,相邻的两个发光二极管单元通过所述电极互联线连接;
制作电极焊盘,形成于所述高压发光二极管的最***的发光二极管单元上;
其特征在于:在所述任意相邻的两个发光二极管单元行列的相邻的首、末发光二极管单元之间制作绝缘保护层开口,用于避免绝缘保护层被介电击穿时产生的热量诱使发光外延叠层被击穿。
根据发明的第六个方面,一种高压发光二极管的制作方法,包括:
提供衬底,并在所述衬底上形成发光外延叠层;
图形化所述发光外延叠层并制作沟道直至裸露出衬底表面,从而将发光外延叠层分隔为多个发光二极管单元,且所述发光二极管单元至少组成两个行列;
制作电极互联线,横跨于所述沟道上,相邻的两个发光二极管单元通过所述电极互联线连接;
制作电极焊盘,形成于所述高压发光二极管的最***的发光二极管单元上;
通过黄光光罩工艺,在所述任意相邻的两个发光二极管单元行列的相邻的首、末发光二极管单元之间以及电极焊盘上形成掩膜层;
覆盖波长转换层,作为绝缘保护层,形成于除电极焊盘区域之外的高压发光二极管的表面上;
去除掩膜层以及位于掩膜层上的波长转换层,从而在所述任意相邻的两个发光二极管单元行列的相邻的首、末发光二极管单元之间形成绝缘保护层开口,用于避免绝缘保护层被介电击穿时产生的热量诱使发光外延叠层被击穿;
切割分离制得若干个高压发光二极管。
进一步地,所述衬底为绝缘衬底,可选择蓝宝石或氮化铝或其它不导电衬底。
进一步地,所述发光外延叠层是采用金属有机化合物化学气相沉积工艺形成。
相较于现有技术,本发明在高压LED中通过在任意相邻的两个发光二极管电势差≥单个发光二极管的正向电压3倍的沟道处设置绝缘保护层开口,用于避免绝缘保护层被介电击穿时产生的热量诱使发光外延叠层被击穿,从常规的ESD通过率低于50%提升到90%以上,从而降低ESD失效概率,提高高压LED可靠性。此外,采用波长转换成作为绝缘保护层,即在芯片制作端即可实现封装(如CSP),制作成本较低。
本发明的其它特征和优点将在随后的说明书中阐述,并且,部分地从说明书中变得显而易见,或者通过实施本发明而了解。本发明的目的和其他优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。
附图说明
附图用来提供对本发明的进一步理解,并且构成说明书的一部分,与本发明的实施例一起用于解释本发明,并不构成对本发明的限制。此外,附图数据是描述概要,不是按比例绘制。
图1为本发明实施例1的高压发光二极管的未覆盖绝缘保护层的结构示意图。
图2为本发明实施例1的高压发光二极管的覆盖绝缘保护层的结构示意图。
图3~8为本发明实施例2制作高压发光二极管的流程示意图。
图9为本发明实施例3的高压发光二极管的结构示意图。
图10为本发明实施例4的高压发光二极管的结构示意图。
图11为本发明实施例5的高压发光二极管的结构示意图。
图12为本发明实施例6的高压发光二极管的结构示意图。
图13为本发明实施例7的高压发光二极管的结构示意图。
图中各标号表示:
101:衬底;102:发光外延层;103:电极互联线;104:电极焊盘;105:绝缘保护层:106:绝缘保护层开口;
201:衬底;202:发光外延层;203:电极焊盘;204:掩膜层:205:绝缘保护层。
具体实施方式
下面结合示意图对本发明的LED器件结构及其制备方法进行详细的描述,借此对本发明如何应用技术手段来解决技术问题,并达成技术效果的实现过程能充分理解并据以实施。需要说明的是,只要不构成冲突,本发明中的各个实施例以及各实施例中的各个特征可以相互结合,所形成的技术方案均在本发明的保护范围之内。
实施例1
为了解决高压芯片的静电放电(ESD)破坏的问题,请参照图1~2,本实施例提供一种高压发光二极管,包括:衬底101和在所述衬底上的发光外延叠层102;所述发光外延叠层具有11个发光二极管单元,且所述发光二极管单元组成3个行列,且呈反S型分布(数目和排列不以此为限),第一行、第三行分别包括4个发光二极管单元,第2行包括3个发光二极管单元,各发光二极管单元之间通过沟道相互隔离;电极互联线103,横跨于所述沟道上,相邻的两个发光二极管单元通过所述电极互联线连接;电极焊盘104,形成于所述高压发光二极管的最***的发光二极管单元上;波长转换层,作为绝缘保护层105,覆盖于除上述任意相邻的两个发光二极管单元行列的相邻的首、末发光二极管单元之间以及电极焊盘区域之外的高压发光二极管的表面上;即在相邻芯粒间易发生ESD失效的部位(电势差较大的相邻芯粒)形成绝缘保护层开口,用于避免绝缘保护层被介电击穿时产生的热量诱使发光外延叠层被击穿,从而提升高压发光二极管的可靠性。
本实施例的绝缘开口呈T型,该绝缘开口位于横向沟道位置的长度定义为L1、L2,位于纵向沟道位置的长度定义为D1、D2,定义沟道的宽度为D0,D0尺寸一般设计成10μm或者以上。为了防止边缘发光二极管(微芯粒)受较高ESD电压的冲击,L1、L2的长度尽量足够长,最好是使得相邻微芯粒间的电势差大于等于单个微芯粒电压3倍的沟道区域长度小于L1或L2的长度。另外,在各发光二极管单元行列的最边缘区域的上下相邻两个微芯粒(其相对电势差最高)会存在边缘电场导致的介质击穿效应。因此还需设计纵向的沟道,一般纵向沟道长度D1、D2设置为D0的3倍及以上,兼顾光电性能和ESD抵抗能力,优选D1、D2长度为60μm,如此可以将位于芯粒边缘的相邻发光二极管(微芯粒)的边缘绝缘保护层所承受的有效电场强度降为原来的1/3及以下,进而提升高压LED芯片的抗ESD能力。
综上,本实施例在相邻发光二极管间电势差较大的位置(ESD容易失效的部位)设置绝缘保护层开口,使得位于较高电势差的相邻发光二极管间的介质有效宽度增加,可以大大减轻ESD加载时绝缘保护层(介质层)中承受的电场强度,从而降低因介电击穿导致的ESD失效发生的概率,提高高压LED的可靠性。
实施例2
请参照图3~8,本实施例制作一种高压发光二极管的工艺步骤,包括:
请参照图3,提供一外延生长用衬底201,优选蓝宝石绝缘衬底,也可以选用氮化铝或其它不导电衬底;通过金属有机化合物化学气相沉积工艺,在所述衬底101上形成发光外延叠层202,从下至上依次包含N型半导体层、发光层和P型半导体层;采用干法/湿法蚀刻工艺,图形化所述发光外延叠层并形成沟道直至裸露出衬底101表面,从而将发光外延叠层分隔为多个高压LED发光单元(图示仅3个高压LED发光单元,但不以此为限,发光单元数目可以根据需要增加),如此形成发光二极管晶圆,其中所述发光单元从下至上依次包含N型半导体层、发光层和P型半导体层;制作电极互联线(图中未示出,可参照图1所示),横跨于所述沟道上,相邻的两个发光二极管单元通过所述电极互联线连接;制作电极焊盘203,形成于所述高压发光二极管的最***的发光二极管单元上;
请参照图4,通过黄光光罩工艺,在任意相邻的两个发光二极管电势差≥单个发光二极管的正向电压3倍的沟道处设置绝缘保护层开口,比如在任意相邻的两个发光二极管单元行列的相邻的首、末发光二极管单元之间(图中未示出,可参照图1所示)以及电极焊盘上形成掩膜层204,掩膜层可以选用光刻胶;
请参照图5,在高压LED的表面上覆盖波长转换层,比如荧光粉和胶的混合物(荧光胶),作为绝缘保护层205;
请参照图6,采用机械研磨的方式,将涂有荧光胶的芯片表面平坦化以露出光刻胶;
请参照图7,去除光刻胶以及位于光刻胶上的荧光胶,从而裸露出电极焊盘,便于后续打线;并在任意相邻的两个发光二极管单元行列的相邻的首、末发光二极管单元之间形成绝缘保护层开口,用于避免绝缘保护层被介电击穿时产生的热量诱使发光外延叠层被击穿;
请参照图8,切割分离制得若干个高压发光二极管。
实施例3
请参照图9,与实施例1区别在于:本实施例的绝缘保护层106采用SiO2,且绝缘保护层开口形状呈一字型,分布于各发光二极管单元行列的横向沟道处。
实施例4
请参照图10,与实施例3区别在于:本实施例的绝缘保护层106采用SiN,且绝缘保护层开口形状呈一字型,分布于各发光二极管单元行列“转角”的纵向沟道处。
实施例5
请参照图11,与实施例4区别在于:本实施例的绝缘保护层开口106仅分布于各发光二极管单元行列“转角”电势差较大的纵向沟道处,即分布于相邻的两个发光二极管单元行列的相邻的首、末发光二极管单元之间。
实施例6
请参照图12,与实施例3区别在于:本实施例除了设置T型的绝缘保护层开口106,还包括一字型的绝缘保护层开口,绝缘保护层开口分布于各发光二极管单元行列的横向沟道处以及各发光二极管单元行列“转角”的纵向沟道处。
实施例7
请参照图13,与实施例2区别在于:本实施例的绝缘保护层开口106形状呈工字型,即位于横向沟道处的绝缘保护层开口贯穿至纵向切割道处的绝缘保护层开口,增强高压发光二极管的ESD耐受力。
实施例8
与实施例1区别在于,本实施例制作无绝缘保护层结构的高压LED芯片(可参照图1所示),相邻芯粒间的高电压(较大的电势差)可以通过空气放电而释放掉,从而避免绝缘保护层层被介电击穿时产生的热量诱使LED外延叠层被击穿。为防止芯片在封装前各道工序中的污染等,本实施例的高压LED芯片封装形式可以采用芯片级封装(CSP)。
需要说明的是,本发明中提及的沟道处,不仅可以是沟道位置,也可以是超过沟道位置延伸至部分发光二极管表面上;本发明提及的横向沟道与纵向沟道可以互换。
上述实施例仅列示性说明本发明的原理及功效,而非用于限制本发明。任何熟悉此项技 术的人员均可在不违背本发明的精神及范围下,对上述实施例进行修改,比如对于诸如呈C型或反C型或S型的发光二极管单元行列,在ESD易失效的部位(电势差较大的相邻微芯粒)设置绝缘开口。因此,本发明的权利保护范围,应如权利要求书所列。
Claims (10)
1.一种高压发光二极管,包括:
衬底和在所述衬底上的发光外延叠层;
所述发光外延叠层具有多个发光二极管单元,且所述发光二极管单元至少组成两个行列,各发光二极管单元之间通过沟道相互隔离;
电极互联线,横跨于所述沟道上,相邻的两个发光二极管单元通过所述电极互联线连接;
电极焊盘,形成于所述高压发光二极管的最***的发光二极管单元上;
绝缘保护层,形成于除电极焊盘区域之外的高压发光二极管的表面上;
其特征在于:在任意所述相邻的两个发光二极管电势差≥单个发光二极管的正向电压3倍的沟道处设置绝缘保护层开口,用于避免绝缘保护层被介电击穿时产生的热量诱使发光外延叠层被击穿。
2.一种高压发光二极管,包括:
衬底和在所述衬底上的发光外延叠层;
所述发光外延叠层具有多个发光二极管单元,且所述发光二极管单元至少组成两个行列,各发光二极管单元之间通过沟道相互隔离;
电极互联线,横跨于所述沟道上,相邻的两个发光二极管单元通过所述电极互联线连接;
电极焊盘,形成于所述高压发光二极管的最***的发光二极管单元上;
绝缘保护层,形成于除电极焊盘区域之外的高压发光二极管的表面上;
其特征在于:在任意所述相邻的两个发光二极管单元行列的首、末发光二极管单元之间设置绝缘保护层开口,用于避免绝缘保护层被介电击穿时产生的热量诱使发光外延叠层被击穿。
3.根据权利要求1或2所述的高压发光二极管,其特征在于:还包括波长转换层,作为绝缘保护层,形成于除电极焊盘区域之外的高压发光二极管的表面上。
4.根据权利要求1或2所述的高压发光二极管,其特征在于:所述发光二极管单元行列呈C型或反C型或S型或反S型分布或前述任意组合之一。
5.根据权利要求1或2所述的高压发光二极管,其特征在于:所述绝缘保护层开口位于所述发光二极管单元的横向沟道和/或纵向沟道。
6.根据权利要求1或2所述的高压发光二极管,其特征在于:所述绝缘保护层开口呈T型或者呈工字型或呈一字型或前述任意组合之一。
7.根据权利要求6所述的高压发光二极管,其特征在于:所述发光二极管单元的横向沟道处或纵向沟道处的绝缘保护层开口长度为沟道宽度的3倍以上。
8.一种高压发光二极管的制作方法,包括:
提供衬底,并在所述衬底上形成发光外延叠层;
图形化所述发光外延叠层并制作沟道直至裸露出衬底表面,从而将发光外延叠层分隔为多个发光二极管单元,且所述发光二极管单元至少组成两个行列;
制作电极互联线,横跨于所述沟道上,相邻的两个发光二极管单元通过所述电极互联线连接;
制作绝缘保护层,形成于除电极焊盘区域之外的高压发光二极管的表面上;
制作电极焊盘,形成于所述高压发光二极管的最***的发光二极管单元上;
其特征在于:在任意所述相邻的两个发光二极管电势差≥单个发光二极管的正向电压3倍的沟道处设置绝缘保护层开口,用于避免绝缘保护层被介电击穿时产生的热量诱使发光外延叠层被击穿。
9.一种高压发光二极管的制作方法,包括:
提供衬底,并在所述衬底上形成发光外延叠层;
图形化所述发光外延叠层并制作沟道直至裸露出衬底表面,从而将发光外延叠层分隔为多个发光二极管单元,且所述发光二极管单元至少组成两个行列;
制作电极互联线,横跨于所述沟道上,相邻的两个发光二极管单元通过所述电极互联线连接;
制作电极焊盘,形成于所述高压发光二极管的最***的发光二极管单元上;
制作绝缘保护层,形成于除电极焊盘区域之外的高压发光二极管的表面上;
其特征在于:在任意所述相邻的两个发光二极管单元行列的相邻的首、末发光二极管单元之间制作绝缘保护层开口,用于避免绝缘保护层被介电击穿时产生的热量诱使发光外延叠层被击穿。
10.一种高压发光二极管的制作方法,包括:
提供衬底,并在所述衬底上形成发光外延叠层;
图形化所述发光外延叠层并制作沟道直至裸露出衬底表面,从而将发光外延叠层分隔为多个发光二极管单元,且所述发光二极管单元至少组成两个行列;
制作电极互联线,横跨于所述沟道上,相邻的两个发光二极管单元通过所述电极互联线连接;
制作电极焊盘,形成于所述高压发光二极管的最***的发光二极管单元上;
通过黄光光罩工艺,在任意所述相邻的两个发光二极管单元行列的相邻的首、末发光二极管单元之间以及电极焊盘上形成掩膜层;
覆盖波长转换层,作为绝缘保护层,形成于除电极焊盘区域之外的高压发光二极管的表面上;
去除掩膜层以及位于掩膜层上的波长转换层,从而在任意所述相邻的两个发光二极管单元行列的相邻的首、末发光二极管单元之间形成绝缘保护层开口,用于避免绝缘保护层被介电击穿时产生的热量诱使发光外延叠层被击穿;
切割分离制得若干个高压发光二极管。
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102646770A (zh) * | 2011-02-22 | 2012-08-22 | 隆达电子股份有限公司 | 发光二极管 |
CN103311261A (zh) * | 2013-05-24 | 2013-09-18 | 安徽三安光电有限公司 | 集成led发光器件及其制作方法 |
CN103443942A (zh) * | 2011-03-31 | 2013-12-11 | 松下电器产业株式会社 | 半导体发光元件以及发光装置 |
CN104064645A (zh) * | 2014-07-03 | 2014-09-24 | 厦门市三安光电科技有限公司 | 一种提升led抗静电能力与亮度的制备方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI328870B (en) * | 2007-10-25 | 2010-08-11 | Au Optronics Corp | Master, pixel array substrate, electro-optical device and manufacturing method thereof |
CN102811880B (zh) * | 2010-03-19 | 2014-02-19 | 丰田自动车株式会社 | 车辆用仪表板 |
US8987772B2 (en) * | 2010-11-18 | 2015-03-24 | Seoul Viosys Co., Ltd. | Light emitting diode chip having electrode pad |
US10157960B2 (en) * | 2014-12-16 | 2018-12-18 | Episky Corporation (Xiamem) Ltd | Light-emitting device with electrode extending layer |
CN105575951B (zh) * | 2015-12-25 | 2017-10-27 | 厦门市三安光电科技有限公司 | 高压发光二极管及其制作方法 |
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Patent Citations (4)
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---|---|---|---|---|
CN102646770A (zh) * | 2011-02-22 | 2012-08-22 | 隆达电子股份有限公司 | 发光二极管 |
CN103443942A (zh) * | 2011-03-31 | 2013-12-11 | 松下电器产业株式会社 | 半导体发光元件以及发光装置 |
CN103311261A (zh) * | 2013-05-24 | 2013-09-18 | 安徽三安光电有限公司 | 集成led发光器件及其制作方法 |
CN104064645A (zh) * | 2014-07-03 | 2014-09-24 | 厦门市三安光电科技有限公司 | 一种提升led抗静电能力与亮度的制备方法 |
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US20180076152A1 (en) | 2018-03-15 |
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