KR100653796B1 - 반도체 집적 회로 장치의 제조 방법 - Google Patents
반도체 집적 회로 장치의 제조 방법 Download PDFInfo
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- KR100653796B1 KR100653796B1 KR1020037011347A KR20037011347A KR100653796B1 KR 100653796 B1 KR100653796 B1 KR 100653796B1 KR 1020037011347 A KR1020037011347 A KR 1020037011347A KR 20037011347 A KR20037011347 A KR 20037011347A KR 100653796 B1 KR100653796 B1 KR 100653796B1
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- 238000000034 method Methods 0.000 title claims abstract description 171
- 230000008569 process Effects 0.000 title claims abstract description 67
- 239000004065 semiconductor Substances 0.000 title claims description 182
- 238000010438 heat treatment Methods 0.000 claims abstract description 43
- 230000003647 oxidation Effects 0.000 claims abstract description 38
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 38
- 239000007789 gas Substances 0.000 claims description 107
- 238000004519 manufacturing process Methods 0.000 claims description 86
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 72
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 63
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 56
- 229910052710 silicon Inorganic materials 0.000 claims description 55
- 239000010703 silicon Substances 0.000 claims description 54
- 239000001257 hydrogen Substances 0.000 claims description 53
- 229910052739 hydrogen Inorganic materials 0.000 claims description 53
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 49
- 239000012298 atmosphere Substances 0.000 claims description 44
- 229910052751 metal Inorganic materials 0.000 claims description 39
- 239000002184 metal Substances 0.000 claims description 39
- 229910001868 water Inorganic materials 0.000 claims description 34
- 238000002844 melting Methods 0.000 claims description 27
- 230000008018 melting Effects 0.000 claims description 27
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 21
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 18
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 16
- 239000001301 oxygen Substances 0.000 claims description 16
- 229910052760 oxygen Inorganic materials 0.000 claims description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 15
- 238000005406 washing Methods 0.000 claims description 14
- 230000001590 oxidative effect Effects 0.000 claims description 13
- 229910052786 argon Inorganic materials 0.000 claims description 9
- 229910052721 tungsten Inorganic materials 0.000 claims description 9
- 239000003054 catalyst Substances 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- 230000007935 neutral effect Effects 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 127
- 230000009467 reduction Effects 0.000 abstract description 4
- 230000001172 regenerating effect Effects 0.000 abstract description 2
- 238000006722 reduction reaction Methods 0.000 abstract 1
- 230000008929 regeneration Effects 0.000 abstract 1
- 238000011069 regeneration method Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 703
- 239000000758 substrate Substances 0.000 description 147
- 229910052581 Si3N4 Inorganic materials 0.000 description 71
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 71
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 60
- 229910052814 silicon oxide Inorganic materials 0.000 description 53
- 235000012431 wafers Nutrition 0.000 description 53
- 239000010410 layer Substances 0.000 description 42
- 229910021417 amorphous silicon Inorganic materials 0.000 description 35
- 230000015572 biosynthetic process Effects 0.000 description 29
- 238000010405 reoxidation reaction Methods 0.000 description 29
- 229910052757 nitrogen Inorganic materials 0.000 description 28
- 238000011109 contamination Methods 0.000 description 25
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 24
- 238000004140 cleaning Methods 0.000 description 23
- 229920002120 photoresistant polymer Polymers 0.000 description 22
- 238000000151 deposition Methods 0.000 description 21
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 20
- 239000012535 impurity Substances 0.000 description 20
- 239000011229 interlayer Substances 0.000 description 20
- 238000001312 dry etching Methods 0.000 description 19
- 239000003990 capacitor Substances 0.000 description 17
- 238000005468 ion implantation Methods 0.000 description 17
- 229910052698 phosphorus Inorganic materials 0.000 description 16
- 238000002955 isolation Methods 0.000 description 14
- 230000002093 peripheral effect Effects 0.000 description 14
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 13
- 230000008021 deposition Effects 0.000 description 13
- 239000011574 phosphorus Substances 0.000 description 13
- 238000003860 storage Methods 0.000 description 12
- 229910021529 ammonia Inorganic materials 0.000 description 11
- 238000004380 ashing Methods 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 10
- 239000000203 mixture Substances 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 8
- 229910052796 boron Inorganic materials 0.000 description 8
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- 238000010926 purge Methods 0.000 description 8
- 229910021332 silicide Inorganic materials 0.000 description 8
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000010453 quartz Substances 0.000 description 7
- 229910002091 carbon monoxide Inorganic materials 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 238000000137 annealing Methods 0.000 description 5
- 125000004429 atom Chemical group 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 5
- 239000002131 composite material Substances 0.000 description 5
- 238000013500 data storage Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000012299 nitrogen atmosphere Substances 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 229910052785 arsenic Inorganic materials 0.000 description 4
- 230000003197 catalytic effect Effects 0.000 description 4
- 230000005465 channeling Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- 230000001976 improved effect Effects 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 238000006467 substitution reaction Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- -1 tungsten nitride Chemical class 0.000 description 3
- 229910021642 ultra pure water Inorganic materials 0.000 description 3
- 239000012498 ultrapure water Substances 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 238000006479 redox reaction Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- AAWZNWVCESLFTD-UHFFFAOYSA-N tungsten;hydrate Chemical compound O.[W] AAWZNWVCESLFTD-UHFFFAOYSA-N 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- 206010024769 Local reaction Diseases 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910008807 WSiN Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000009291 secondary effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
-
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
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Abstract
Description
Claims (46)
- 반도체 집적 회로 장치의 제조 방법에 있어서,(a) 웨이퍼의 제1 주면 상에 고융점 금속막을 형성하는 공정과,(b) 상기 고융점 금속막이 형성된 상기 웨이퍼의 상기 제1 주면을, 상기 고융점 금속의 산화물을 환원하는 조건 하에서, 섭씨 600도 이상의 제1 온도까지 승온하는 공정과,(c) 수소와, 촉매에 의해 산소 및 수소로부터 합성된 수분을 포함하는 혼합 가스 분위기 속에서, 상기 고융점 금속막을 산화하지 않고, 상기 웨이퍼의 상기 제1 주면 상의 실리콘을 주요한 성분으로서 포함하는 부분에 대하여, 상기 제1 온도로 산화 처리를 실시하는 공정과,(d) 상기 (c) 공정의 후, 과산화수소를 실질적으로 포함하지 않는 중성 또는 약알칼리성의 물 또는 용액에 의해, 상기 웨이퍼의 상기 제1 주면을 세정하는 공정을 포함하는 반도체 집적 회로 장치의 제조 방법.
- 제1항에 있어서,(e) 상기 (c) 공정의 후, 상기 (d) 공정의 전에, 상기 고융점 금속에 관하여 환원성 조건 하에서, 상기 웨이퍼의 상기 제1 주면을 섭씨 500도 미만의 제2 온도까지 강온(降溫)하는 공정을 더 포함하는 것을 특징으로 하는 반도체 집적 회로 장치의 제조 방법.
- 제2항에 있어서,상기 제2 온도는 섭씨 400도인 것을 특징으로 하는 반도체 집적 회로 장치의 제조 방법.
- 제3항에 있어서,상기 제2 온도는 섭씨 300도인 것을 특징으로 하는 반도체 집적 회로 장치의 제조 방법.
- 제4항에 있어서,상기 제2 온도는 섭씨 200도인 것을 특징으로 하는 반도체 집적 회로 장치의 제조 방법.
- 제5항에 있어서,상기 제2 온도는 섭씨 100도인 것을 특징으로 하는 반도체 집적 회로 장치의 제조 방법.
- 제6항에 있어서,상기 제2 온도는 섭씨 70도 내지 섭씨 20도의 범위인 것을 특징으로 하는 반도체 집적 회로 장치의 제조 방법.
- 제1항에 있어서,상기 실리콘을 주요한 성분으로서 포함하는 부분은, 상기 웨이퍼의 상기 제1 주면 중 적어도 일부를 구성하는, 실리콘을 주요한 성분으로서 포함하는 실리콘 베 이스 표면 영역과, 상기 웨이퍼의 상기 제1 주면 상의 실리콘을 주요한 성분으로서 포함하는 실리콘 베이스막 영역을 포함하는 것을 특징으로 하는 반도체 집적 회로 장치의 제조 방법.
- 제8항에 있어서,상기 혼합 가스 분위기의 기압은, 상압 또는 준상압 감압 영역(Subatmospheric region)인 것을 특징으로 하는 반도체 집적 회로 장치의 제조 방법.
- 제9항에 있어서,상기 혼합 가스는 질소 가스, 아르곤 가스 또는 헬륨 가스를 포함하는 것을 특징으로 하는 반도체 집적 회로 장치의 제조 방법.
- 제1항에 있어서,상기 고융점 금속막은 몰리브덴 또는 텅스텐을 주요한 성분으로서 포함하는 것을 특징으로 하는 반도체 집적 회로 장치의 제조 방법.
- 반도체 집적 회로 장치의 제조 방법에 있어서,(a) 웨이퍼의 제1 주면 상에 고융점 금속막을 형성하는 공정과,(b) 상기 고융점 금속막이 형성된 상기 웨이퍼의 상기 제1 주면을, 상기 고융점 금속막의 산화물을 환원하는 조건 하에서, 섭씨 600도 이상의 제1 온도까지 램프 가열(Lamp heating)에 의해 승온하는 공정과,(c) 수소와 수분을 포함하는 혼합 가스 분위기 속에서, 상기 고융점 금속막을 산화하지 않고, 상기 웨이퍼의 상기 제1 주면 상의 실리콘을 주요한 성분으로서 포함하는 부분에 대하여, 상기 제1 온도에서 산화 처리를 실시하는 공정과,(d) 상기 (c) 공정의 후, 과산화수소를 실질적으로 포함하지 않는 중성 또는 약알칼리성의 물 또는 용액에 의해, 상기 웨이퍼의 상기 제1 주면을 세정하는 공정을 포함하는 반도체 집적 회로 장치의 제조 방법.
- 제12항에 있어서,(e) 상기 (c) 공정의 후, 상기 (d) 공정의 전에, 상기 고융점 금속막에 관하여 환원성 조건 하에서, 상기 웨이퍼의 상기 제1 주면을 섭씨 500도 미만의 제2 온도까지 강온하는 공정을 더 포함하는 것을 특징으로 하는 반도체 집적 회로 장치의 제조 방법.
- 제13항에 있어서,상기 제2 온도는 섭씨 400도인 것을 특징으로 하는 반도체 집적 회로 장치의 제조 방법.
- 제14항에 있어서,상기 제2 온도는 섭씨 300도인 것을 특징으로 하는 반도체 집적 회로 장치의 제조 방법.
- 제15항에 있어서,상기 제2 온도는 섭씨 200도인 것을 특징으로 하는 반도체 집적 회로 장치의 제조 방법.
- 제16항에 있어서,상기 제2 온도는 섭씨 100도인 것을 특징으로 하는 반도체 집적 회로 장치의 제조 방법.
- 제17항에 있어서,상기 제2 온도는 섭씨 70도 내지 섭씨 20도의 범위인 것을 특징으로 하는 반도체 집적 회로 장치의 제조 방법.
- 제12항에 있어서,상기 실리콘을 주요한 성분으로서 포함하는 부분은, 상기 웨이퍼의 상기 제1 주면 중 적어도 일부를 구성하는, 실리콘을 주요한 성분으로서 포함하는 실리콘 베이스 표면 영역과, 상기 웨이퍼의 상기 제1 주면 상의 실리콘을 주요한 성분으로서 포함하는 실리콘 베이스막 영역을 포함하는 것을 특징으로 하는 반도체 집적 회로 장치의 제조 방법.
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PCT/JP2001/009547 WO2002073696A1 (fr) | 2001-03-12 | 2001-10-31 | Procede pour fabriquer un dispositif semi-conducteur a circuit integre |
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JP (2) | JP4109118B2 (ko) |
KR (2) | KR20050004924A (ko) |
CN (2) | CN1290197C (ko) |
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-
2001
- 2001-10-31 US US10/468,441 patent/US7049187B2/en not_active Expired - Lifetime
- 2001-10-31 KR KR10-2004-7020408A patent/KR20050004924A/ko not_active Application Discontinuation
- 2001-10-31 JP JP2002572641A patent/JP4109118B2/ja not_active Expired - Fee Related
- 2001-10-31 WO PCT/JP2001/009547 patent/WO2002073696A1/ja active Application Filing
- 2001-10-31 KR KR1020037011347A patent/KR100653796B1/ko not_active IP Right Cessation
- 2001-10-31 CN CNB018229441A patent/CN1290197C/zh not_active Expired - Fee Related
- 2001-10-31 CN CNB2006101357454A patent/CN100447980C/zh not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
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CN1290197C (zh) | 2006-12-13 |
US7049187B2 (en) | 2006-05-23 |
US7300833B2 (en) | 2007-11-27 |
WO2002073696A1 (fr) | 2002-09-19 |
CN1941324A (zh) | 2007-04-04 |
US20060009046A1 (en) | 2006-01-12 |
US7144766B2 (en) | 2006-12-05 |
KR20050004924A (ko) | 2005-01-12 |
JP4607197B2 (ja) | 2011-01-05 |
KR20030080239A (ko) | 2003-10-11 |
JP2008211212A (ja) | 2008-09-11 |
CN1505840A (zh) | 2004-06-16 |
CN100447980C (zh) | 2008-12-31 |
JP4109118B2 (ja) | 2008-07-02 |
TW536753B (en) | 2003-06-11 |
US20070048917A1 (en) | 2007-03-01 |
US20040063276A1 (en) | 2004-04-01 |
JPWO2002073696A1 (ja) | 2004-07-08 |
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