US5880036A
(en)
|
1992-06-15 |
1999-03-09 |
Micron Technology, Inc. |
Method for enhancing oxide to nitride selectivity through the use of independent heat control
|
US6040619A
(en)
*
|
1995-06-07 |
2000-03-21 |
Advanced Micro Devices |
Semiconductor device including antireflective etch stop layer
|
KR100325383B1
(ko)
*
|
1996-07-12 |
2002-04-17 |
니시무로 타이죠 |
반도체 장치 및 그 제조 방법
|
JP3548834B2
(ja)
*
|
1996-09-04 |
2004-07-28 |
沖電気工業株式会社 |
不揮発性半導体メモリの製造方法
|
US6190966B1
(en)
*
|
1997-03-25 |
2001-02-20 |
Vantis Corporation |
Process for fabricating semiconductor memory device with high data retention including silicon nitride etch stop layer formed at high temperature with low hydrogen ion concentration
|
US6849557B1
(en)
*
|
1997-04-30 |
2005-02-01 |
Micron Technology, Inc. |
Undoped silicon dioxide as etch stop for selective etch of doped silicon dioxide
|
TW472398B
(en)
|
1997-06-27 |
2002-01-11 |
Matsushita Electric Ind Co Ltd |
Semiconductor device and its manufacturing method
|
TW337607B
(en)
*
|
1997-08-06 |
1998-08-01 |
Mos Electronics Taiwan Inc |
Process for forming a contact hole in an EEPROM with NOR construction
|
TW377501B
(en)
*
|
1997-09-08 |
1999-12-21 |
United Microelectronics Corp |
Method of dual damascene
|
TW463331B
(en)
*
|
1997-09-26 |
2001-11-11 |
Programmable Microelectronics |
Self-aligned drain contact PMOS flash memory and process for making same
|
JPH11135745A
(ja)
|
1997-10-29 |
1999-05-21 |
Toshiba Corp |
半導体装置及びその製造方法
|
US6274429B1
(en)
*
|
1997-10-29 |
2001-08-14 |
Texas Instruments Incorporated |
Use of Si-rich oxide film as a chemical potential barrier for controlled oxidation
|
US6004861A
(en)
*
|
1997-12-19 |
1999-12-21 |
Advanced Micro Devices |
Process for making a discontinuous source/drain formation for a high density integrated circuit
|
EP0930656A3
(fr)
*
|
1997-12-30 |
2001-04-04 |
Texas Instruments Inc. |
Région de mémoire flash et son procédé de fabrication
|
US7804115B2
(en)
*
|
1998-02-25 |
2010-09-28 |
Micron Technology, Inc. |
Semiconductor constructions having antireflective portions
|
US6274292B1
(en)
*
|
1998-02-25 |
2001-08-14 |
Micron Technology, Inc. |
Semiconductor processing methods
|
US5977601A
(en)
*
|
1998-07-17 |
1999-11-02 |
Advanced Micro Devices, Inc. |
Method for etching memory gate stack using thin resist layer
|
US6177339B1
(en)
*
|
1998-08-27 |
2001-01-23 |
Micron Technology, Inc. |
Semiconductor processing methods of forming integrated circuitry and semiconductor processing methods of forming dynamic random access memory (DRAM) circuitry
|
US6395623B1
(en)
|
1998-08-27 |
2002-05-28 |
Micron Technology, Inc. |
Semiconductor processing methods of forming a contact opening to a conductive line and methods of forming substrate active area source/drain regions
|
US6281100B1
(en)
*
|
1998-09-03 |
2001-08-28 |
Micron Technology, Inc. |
Semiconductor processing methods
|
US6268282B1
(en)
*
|
1998-09-03 |
2001-07-31 |
Micron Technology, Inc. |
Semiconductor processing methods of forming and utilizing antireflective material layers, and methods of forming transistor gate stacks
|
US6319822B1
(en)
*
|
1998-10-01 |
2001-11-20 |
Taiwan Semiconductor Manufacturing Company |
Process for forming an integrated contact or via
|
US6828683B2
(en)
|
1998-12-23 |
2004-12-07 |
Micron Technology, Inc. |
Semiconductor devices, and semiconductor processing methods
|
JP3287322B2
(ja)
*
|
1998-12-28 |
2002-06-04 |
日本電気株式会社 |
半導体装置の製造方法
|
US7235499B1
(en)
*
|
1999-01-20 |
2007-06-26 |
Micron Technology, Inc. |
Semiconductor processing methods
|
TW471116B
(en)
*
|
1999-01-22 |
2002-01-01 |
United Microelectronics Corp |
Contact isolation structure and the manufacturing method thereof
|
US6245669B1
(en)
*
|
1999-02-05 |
2001-06-12 |
Taiwan Semiconductor Manufacturing Company |
High selectivity Si-rich SiON etch-stop layer
|
US7482278B1
(en)
*
|
1999-02-11 |
2009-01-27 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Key-hole free process for high aspect ratio gap filling with reentrant spacer
|
JP2000260867A
(ja)
*
|
1999-03-09 |
2000-09-22 |
Toshiba Corp |
半導体装置および半導体装置の製造方法
|
US6348709B1
(en)
*
|
1999-03-15 |
2002-02-19 |
Micron Technology, Inc. |
Electrical contact for high dielectric constant capacitors and method for fabricating the same
|
TW409361B
(en)
*
|
1999-05-13 |
2000-10-21 |
Mosel Vitelic Inc |
Self-aligned contact process
|
KR20010004263A
(ko)
*
|
1999-06-28 |
2001-01-15 |
김영환 |
스택게이트 플래쉬 이이피롬 셀의 게이트 형성 방법
|
AU5755200A
(en)
|
1999-08-27 |
2001-03-26 |
Joel R.L. Ehrenkranz |
Method of using dihydrochalcone derivatives to block glucose transfer
|
US7067414B1
(en)
|
1999-09-01 |
2006-06-27 |
Micron Technology, Inc. |
Low k interlevel dielectric layer fabrication methods
|
US6403442B1
(en)
|
1999-09-02 |
2002-06-11 |
Micron Technology, Inc. |
Methods of forming capacitors and resultant capacitor structures
|
US6342415B1
(en)
*
|
1999-09-23 |
2002-01-29 |
Advanced Micro Devices, Inc. |
Method and system for providing reduced-sized contacts in a semiconductor device
|
US6465835B1
(en)
*
|
1999-09-27 |
2002-10-15 |
Advanced Micro Devices, Inc. |
Charge gain/charge loss junction leakage prevention for flash technology by using double isolation/capping layer between lightly doped drain and gate
|
US6448608B1
(en)
*
|
1999-09-27 |
2002-09-10 |
Advanced Micro Devices, Inc. |
Capping layer
|
US6486506B1
(en)
*
|
1999-11-01 |
2002-11-26 |
Advanced Micro Devices, Inc. |
Flash memory with less susceptibility to charge gain and charge loss
|
US6329686B1
(en)
|
1999-11-12 |
2001-12-11 |
Micron Technology, Inc. |
Method of fabricating conductive straps to interconnect contacts to corresponding digit lines by employing an angled sidewall implant and semiconductor devices fabricated thereby
|
JP2001148428A
(ja)
*
|
1999-11-18 |
2001-05-29 |
Toshiba Microelectronics Corp |
半導体装置
|
US6440860B1
(en)
|
2000-01-18 |
2002-08-27 |
Micron Technology, Inc. |
Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride
|
KR100339683B1
(ko)
*
|
2000-02-03 |
2002-06-05 |
윤종용 |
반도체 집적회로의 자기정렬 콘택 구조체 형성방법
|
US6420752B1
(en)
*
|
2000-02-11 |
2002-07-16 |
Advanced Micro Devices, Inc. |
Semiconductor device with self-aligned contacts using a liner oxide layer
|
US6486015B1
(en)
*
|
2000-04-25 |
2002-11-26 |
Infineon Technologies Ag |
Low temperature carbon rich oxy-nitride for improved RIE selectivity
|
US6261905B1
(en)
*
|
2000-04-28 |
2001-07-17 |
Taiwan Semiconductor Manufacturing Company |
Flash memory structure with stacking gate formed using damascene-like structure
|
US20080003542A1
(en)
*
|
2000-08-11 |
2008-01-03 |
Shuhua Jin |
Self-Curing System For Endodontic Sealant Applications
|
US6306759B1
(en)
*
|
2000-09-05 |
2001-10-23 |
Vanguard International Semiconductor Corporation |
Method for forming self-aligned contact with liner
|
JP2002217383A
(ja)
*
|
2001-01-12 |
2002-08-02 |
Hitachi Ltd |
半導体集積回路装置の製造方法および半導体集積回路装置
|
US6642584B2
(en)
*
|
2001-01-30 |
2003-11-04 |
International Business Machines Corporation |
Dual work function semiconductor structure with borderless contact and method of fabricating the same
|
KR20050004924A
(ko)
*
|
2001-03-12 |
2005-01-12 |
가부시키가이샤 히타치세이사쿠쇼 |
반도체 집적 회로 장치의 제조 방법
|
US6503844B2
(en)
*
|
2001-06-06 |
2003-01-07 |
Infineon Technologies, Ag |
Notched gate configuration for high performance integrated circuits
|
KR20020093223A
(ko)
*
|
2001-06-07 |
2002-12-16 |
삼성전자 주식회사 |
비휘발성 메모리 소자 및 그 제조방법
|
KR100377833B1
(ko)
*
|
2001-06-19 |
2003-03-29 |
삼성전자주식회사 |
보더리스 콘택 구조를 갖는 반도체 장치 및 그 제조방법
|
KR100426811B1
(ko)
*
|
2001-07-12 |
2004-04-08 |
삼성전자주식회사 |
셀프얼라인 콘택을 갖는 반도체 소자 및 그의 제조방법
|
US6790721B2
(en)
*
|
2001-07-13 |
2004-09-14 |
Micron Technology, Inc. |
Metal local interconnect self-aligned source flash cell
|
US6706594B2
(en)
*
|
2001-07-13 |
2004-03-16 |
Micron Technology, Inc. |
Optimized flash memory cell
|
US6989108B2
(en)
*
|
2001-08-30 |
2006-01-24 |
Micron Technology, Inc. |
Etchant gas composition
|
US20030042614A1
(en)
*
|
2001-08-30 |
2003-03-06 |
Ammar Deraa |
Metal silicide adhesion layer for contact structures
|
US6858904B2
(en)
*
|
2001-08-30 |
2005-02-22 |
Micron Technology, Inc. |
High aspect ratio contact structure with reduced silicon consumption
|
CN1599961A
(zh)
*
|
2001-11-30 |
2005-03-23 |
松下电器产业株式会社 |
半导体装置及其制造方法
|
US6815353B2
(en)
*
|
2002-02-05 |
2004-11-09 |
Micrel, Incorporated |
Multi-layer film stack polish stop
|
US7651910B2
(en)
*
|
2002-05-17 |
2010-01-26 |
Micron Technology, Inc. |
Methods of forming programmable memory devices
|
US6500728B1
(en)
*
|
2002-05-24 |
2002-12-31 |
Taiwan Semiconductor Manufacturing Company |
Shallow trench isolation (STI) module to improve contact etch process window
|
US6686247B1
(en)
*
|
2002-08-22 |
2004-02-03 |
Intel Corporation |
Self-aligned contacts to gates
|
US20050212035A1
(en)
*
|
2002-08-30 |
2005-09-29 |
Fujitsu Amd Semiconductor Limited |
Semiconductor storage device and manufacturing method thereof
|
JP4489345B2
(ja)
*
|
2002-12-13 |
2010-06-23 |
株式会社ルネサステクノロジ |
半導体装置の製造方法
|
KR100500448B1
(ko)
*
|
2003-02-06 |
2005-07-14 |
삼성전자주식회사 |
선택적 디스포저블 스페이서 기술을 사용하는 반도체집적회로의 제조방법 및 그에 의해 제조된 반도체 집적회로
|
US7163860B1
(en)
*
|
2003-05-06 |
2007-01-16 |
Spansion Llc |
Method of formation of gate stack spacer and charge storage materials having reduced hydrogen content in charge trapping dielectric flash memory device
|
TW594945B
(en)
*
|
2003-09-05 |
2004-06-21 |
Powerchip Semiconductor Corp |
Flash memory cell and manufacturing method thereof
|
US7074701B2
(en)
*
|
2003-11-21 |
2006-07-11 |
Taiwan Semiconductor Manufacturing Company |
Method of forming a borderless contact opening featuring a composite tri-layer etch stop material
|
US6955965B1
(en)
|
2003-12-09 |
2005-10-18 |
Fasl, Llc |
Process for fabrication of nitride layer with reduced hydrogen content in ONO structure in semiconductor device
|
US6949481B1
(en)
|
2003-12-09 |
2005-09-27 |
Fasl, Llc |
Process for fabrication of spacer layer with reduced hydrogen content in semiconductor device
|
DE102004001853B3
(de)
*
|
2004-01-13 |
2005-07-21 |
Infineon Technologies Ag |
Verfahren zum Herstellen von Kontaktierungsanschlüssen
|
US9236383B2
(en)
*
|
2004-04-27 |
2016-01-12 |
Micron Technology, Inc. |
Method and apparatus for fabricating a memory device with a dielectric etch stop layer
|
US7157341B2
(en)
*
|
2004-10-01 |
2007-01-02 |
International Business Machines Corporation |
Gate stacks
|
WO2006064394A1
(fr)
*
|
2004-12-13 |
2006-06-22 |
Koninklijke Philips Electronics N.V. |
Empilement de couche sans bord (a gravure) pour applications a memoire non volatile
|
JP2006245578A
(ja)
*
|
2005-02-28 |
2006-09-14 |
Hynix Semiconductor Inc |
半導体装置の製造方法
|
US7196008B1
(en)
*
|
2005-03-23 |
2007-03-27 |
Spansion Llc |
Aluminum oxide as liner or cover layer to spacers in memory device
|
US7488645B2
(en)
*
|
2005-04-13 |
2009-02-10 |
United Microelectronics Corp. |
Method of fabricating a non-volatile memory
|
KR100850425B1
(ko)
*
|
2005-09-15 |
2008-08-04 |
동부일렉트로닉스 주식회사 |
플래시 메모리 셀 및 그 제조 방법
|
US8415734B2
(en)
*
|
2006-12-07 |
2013-04-09 |
Spansion Llc |
Memory device protection layer
|
US20080157289A1
(en)
*
|
2006-12-27 |
2008-07-03 |
Spansion Llc |
Method to achieve a low cost transistor isolation dielectric process module with improved process control, process cost, and yield potential
|
US7763517B2
(en)
*
|
2007-02-12 |
2010-07-27 |
Macronix International Co., Ltd. |
Method of forming non-volatile memory cell
|
US20080251833A1
(en)
*
|
2007-04-12 |
2008-10-16 |
Michael Specht |
Integrated circuits and methods of manufacture
|
KR20090050230A
(ko)
*
|
2007-11-15 |
2009-05-20 |
주식회사 하이닉스반도체 |
반도체 소자의 콘택 형성 방법
|
US8354347B2
(en)
*
|
2007-12-11 |
2013-01-15 |
Globalfoundries Singapore Pte. Ltd. |
Method of forming high-k dielectric stop layer for contact hole opening
|
US8288293B2
(en)
*
|
2009-04-20 |
2012-10-16 |
Sandisk Technologies Inc. |
Integrated circuit fabrication using sidewall nitridation processes
|
US8647952B2
(en)
*
|
2010-12-21 |
2014-02-11 |
Globalfoundries Inc. |
Encapsulation of closely spaced gate electrode structures
|
JP5638413B2
(ja)
*
|
2011-02-08 |
2014-12-10 |
東京エレクトロン株式会社 |
マスクパターンの形成方法
|
CN104752360B
(zh)
|
2013-12-30 |
2018-11-16 |
中芯国际集成电路制造(上海)有限公司 |
存储器件及其形成方法
|
US9570450B1
(en)
|
2015-11-19 |
2017-02-14 |
International Business Machines Corporation |
Hybrid logic and SRAM contacts
|
US10242918B2
(en)
|
2017-02-08 |
2019-03-26 |
International Business Machines Corporation |
Shallow trench isolation structures and contact patterning
|
CN109994484A
(zh)
*
|
2017-12-28 |
2019-07-09 |
中芯国际集成电路制造(上海)有限公司 |
Nand存储器及其形成方法
|
US10833160B1
(en)
|
2019-04-17 |
2020-11-10 |
Globalfoundries Inc. |
Field-effect transistors with self-aligned and non-self-aligned contact openings
|