KR100639841B1 - 이방성 에칭 장치 및 방법 - Google Patents
이방성 에칭 장치 및 방법 Download PDFInfo
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- KR100639841B1 KR100639841B1 KR1020017001053A KR20017001053A KR100639841B1 KR 100639841 B1 KR100639841 B1 KR 100639841B1 KR 1020017001053 A KR1020017001053 A KR 1020017001053A KR 20017001053 A KR20017001053 A KR 20017001053A KR 100639841 B1 KR100639841 B1 KR 100639841B1
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Abstract
Description
Claims (40)
- 기판 물질이나 기판 물질의 표면 위에 존재하는 필름을 처리하는 방법에 있어서, 상기 방법은 상기 기판 물질 또는 필름에서 에칭되는 특징부의 깊이를 증가시키는 에칭 프로세스 사이클을 주기적으로 그리고 반복적으로 실행하고, 각각의 에칭 프로세스 사이클은,(a) 상기 기판 물질 또는 필름을 에칭하는 단계,(b) 에칭된 특징부의 표면에 패시베이션 층을 증착하거나 형성하는 단계,(c) 상기 기판 물질이나 필름 표면에 수직인 방향으로 에칭을 진행하기 위해 상기 에칭된 특징부로부터 패시베이션 층을 선택적으로 제거하는 단계를 포함하며, 이때, 상기 단계 (a)와 (b) 중 한개 이상의 단계가 플라즈마 부재하에 실행되는 것을 특징으로 하는 기판 물질이나 기판 물질의 표면 위에 존재하는 필름을 처리하는 방법.
- 제 1 항에 있어서, 상기 단계 (a)는 플라즈마 부재하에 한 가지 이상의 화학 물질로 실시되는 것을 특징으로 하는 기판 물질이나 기판 물질의 표면 위에 존재하는 필름을 처리하는 방법.
- 제 1 항에 있어서, 상기 단계 (a) 및 (b) 중 나머지 한 단계는 플라즈마의 존재하에 실시되는 것을 특징으로 하는 기판 물질이나 기판 물질의 표면 위에 존재하는 필름을 처리하는 방법.
- 제 1 항에 있어서, 상기 물질의 표면에는 마스크 패턴이 이미 형성되어 있는 것을 특징으로 하는 기판 물질이나 기판 물질의 표면 위에 존재하는 필름을 처리하는 방법.
- 제 1 항에 있어서, 상기 기판 물질이나 필름은 유전체인 것을 특징으로 하는 기판 물질이나 기판 물질의 표면 위에 존재하는 필름을 처리하는 방법.
- 제 5 항에 있어서, 상기 기판 물질이나 필름은 산화물로서, 피렉스, 글래스, 석영, 또는 실리콘의 산화물이거나, 플라즈마, CVD에 의해 성장하거나 증착된 실리콘 산화물인 것을 특징으로 하는 기판 물질이나 기판 물질의 표면 위에 존재하는 필름을 처리하는 방법.
- 제 1 항에 있어서, 상기 기판 물질이나 필름이 HF로 에칭되는 것을 특징으로 하는 기판 물질이나 기판 물질의 표면 위에 존재하는 필름을 처리하는 방법.
- 제 1 항에 있어서, 상기 단계 (a)에 H2O 와 알코올 중 한가지 이상이 존재하는 것을 특징으로 하는 기판 물질이나 기판 물질의 표면 위에 존재하는 필름을 처리하는 방법.
- 제 1항에 있어서, 상기 기판 물질이나 필름은 반도체로서, Si, SiGe, 또는 Ge 반도체인 것을 특징으로 하는 기판 물질이나 기판 물질의 표면 위에 존재하는 필름을 처리하는 방법.
- 제 9 항에 있어서, 상기 기판 물질이나 필름은 HF, HNO3과 CH3COOH로 에칭되거나, 할로겐 성분만을 포함하는 인터-할로겐 가스에 해당하는 할로겐 함유 화합물로 에칭되는 것을 특징으로 하는 기판 물질이나 기판 물질의 표면 위에 존재하는 필름을 처리하는 방법.
- 제 1항에 있어서, 상기 기판 물질이나 필름은 전도체로서, Au 또는 Pt 전도체인 것을 특징으로 하는 기판 물질이나 기판 물질의 표면 위에 존재하는 필름을 처리하는 방법.
- 제 11 항에 있어서, 상기 기판 물질이나 필름이 왕수(aqua regia)를 사용해 에칭되는 것을 특징으로 하는 기판 물질이나 기판 물질의 표면 위에 존재하는 필름을 처리하는 방법.
- 제 1 항에 있어서, N2나 그외 다른 불활성 기체가 단계 (a)에 존재하고, 상기 단계들 간에 정화 가스로 N2나 그외 다른 불활성 기체가 사용되는 것을 특징으로 하는 기판 물질이나 기판 물질의 표면 위에 존재하는 필름을 처리하는 방법.
- 제 1 항에 있어서, 화학적 에칭에 내성을 가진 표면에 상기 패시베이션 층이 형성되는 것을 특징으로 하는 기판 물질이나 기판 물질의 표면 위에 존재하는 필름을 처리하는 방법.
- 제 1 항에 있어서, 증착되는 패시베이션 층이 폴리머인 것을 특징으로 하는 기판 물질이나 기판 물질의 표면 위에 존재하는 필름을 처리하는 방법.
- 제 15 항에 있어서, 상기 폴리머는 화학식 n(CxFy)의 형태인 것을 특징으로 하는 기판 물질이나 기판 물질의 표면 위에 존재하는 필름을 처리하는 방법.
- 제 1 항에 있어서, 상기 단계 (b)에 플라즈마가 존재하지 않을 때, 패시베이션 층 증착에 광에 의한 중합 과정이 사용되는 것을 특징으로 하는 기판 물질이나 기판 물질의 표면 위에 존재하는 필름을 처리하는 방법.
- 제 1 항에 있어서, 상기 패시베이션 층의 선택적 제거는 표면 방사에 의해 실행되는 것을 특징으로 하는 기판 물질이나 기판 물질의 표면 위에 존재하는 필름을 처리하는 방법.
- 제 18 항에 있어서, 상기 방사는 열분해를 위해 상기 기판 물질이나 필름의 표면의 전면이나 배면을 가열함으로서 제공되거나, 광 분해를 위해 상기 기판 물질이나 필름의 전면에 광원에 의해 제공되며, 또는 상기 방사의 소스가 엑시머 레이저인 것을 특징으로 하는 기판 물질이나 기판 물질의 표면 위에 존재하는 필름을 처리하는 방법.
- 제 18항에 있어서, 상기 방사는 지향성으로서, 에칭 정면 전파 방향과 평행하게 이루어지는 것을 특징으로 하는 기판 물질이나 기판 물질의 표면 위에 존재하는 필름을 처리하는 방법.
- 제 18 항에 있어서, 상기 표면 방사가 플라즈마이고, 상기 플라즈마의 이온 에너지는 10eV보다 큰 것을 특징으로 하는 기판 물질이나 기판 물질의 표면 위에 존재하는 필름을 처리하는 방법.
- 제 21 항에 있어서, 상기 플라즈마는 전구체 가스, 또는 전구체 가스들의 혼합물을 포함하는 것을 특징으로 하는 기판 물질이나 기판 물질의 표면 위에 존재하는 필름을 처리하는 방법.
- 제 22 항에 있어서, 상기 전구체 가스는 패시베이션 층을 물리적으로 제거할 수 있는 불활성 가스와, 화학적 방법으로 패시베이션 층을 물리적으로 제거할 수 있는 가스 중 한가지 이상을 포함하는 것을 특징으로 하는 기판 물질이나 기판 물질의 표면 위에 존재하는 필름을 처리하는 방법.
- 제 22항에 있어서, 상기 전구체 가스는 단계 (b)에서 패시베이션 층을 증착하는데 사용되는 물질, 또는, 단계 (a)에서 사용되는 화학적 에칭제를 포함하는 것을 특징으로 하는 기판 물질이나 기판 물질의 표면 위에 존재하는 필름을 처리하는 방법.
- 제 1 항에 있어서, 공급되는 모든 가스는 상기 단계들의 공정 수행을 위한 챔버에 로컬 배치된 이송 장치의 이용 지점으로부터 공급되는 것을 특징으로 하는 기판 물질이나 기판 물질의 표면 위에 존재하는 필름을 처리하는 방법.
- 제 1 항에 있어서, 상기 기판 물질이나 필름은 금속 및 자기 물질로 만들어지고, 상기 프로세스는 디케톤, 케토이민, 할로겐화 카르복실산, 아세트산, 그리고 포름산 화학물질 중 한가지 이상을, 그리고 헥사플루오르-2,4,-펜타네디온 및 플루오르화 아세틸-아세톤 그룹을 포함하는 그 확장형 화학물질을 에칭 물질로 이용하여 고온에서 대기압보다 높은 압력에서 동작하는 것을 특징으로 하는 기판 물질이나 기판 물질의 표면 위에 존재하는 필름을 처리하는 방법.
- 제 1 항 내지 제 26 항에 따른 기판 물질이나 기판 물질의 표면 위에 존재하는 필름을 처리하는 방법을 실행하기 위한 장치에 있어서,상기 장치는 챔버를 포함하고,상기 챔버는 화학물질 유입구와 배출구를 포함하며,상기 챔버 내에는 기판을 수용하기 위한 지지부가 배치되고, 상기 장치는,- 기판 물질이나 기판 물질의 표면 위에 존재하는 필름을 한가지 이상의 화학물질로 에칭하기 위한 수단,- 에칭된 특징부의 표면에 패시베이션 층을 증착하기 위한 수단, 그리고- 상기 기판 물질이나 필름의 표면에 수직인 방향으로 에칭을 진행하기 위해 에칭된 특징부로부터 상기 패시베이션층을 선택적으로 제거하기 위한 수단을 포함하는 것을 특징으로 하는 기판 물질이나 기판 물질의 표면 위에 존재하는 필름을 처리하는 방법을 실행하기 위한 장치.
- 제 27 항에 있어서, 상기 지지부는 제 1 전극 형태이고 제 2 전극은 제 1 전극과 이격 배치되는 것을 특징으로 하는 기판 물질이나 기판 물질의 표면 위에 존재하는 필름을 처리하는 방법을 실행하기 위한 장치.
- 제 28 항에 있어서, 챔버 내 플라즈마에 RF 에너지 또는 마이크로파 에너지를 공급하기 위한 수단을 추가로 포함하는 것을 특징으로 하는 기판 물질이나 기판 물질의 표면 위에 존재하는 필름을 처리하는 방법을 실행하기 위한 장치.
- 제 27항에 있어서, 사이클의 일부분 이상 동안 기판을 향해 이온을 가속시키도록 상기 지지부에 전기 바이어스를 제공하기 위한 수단을 추가로 포함하는 것을 특징으로 하는 기판 물질이나 기판 물질의 표면 위에 존재하는 필름을 처리하는 방법을 실행하기 위한 장치.
- 제 27항에 있어서,- 챔버에 방사 에너지를 공급하는 수단,- 기판 온도를 제어하는 수단, 그리고- 에칭의 균질성을 높이기 위한 회전 수단중 한가지 이상을 추가로 포함하는 것을 특징으로 하는 기판 물질이나 기판 물질의 표면 위에 존재하는 필름을 처리하는 방법을 실행하기 위한 장치.
- 제 27항에 있어서,기판을 에칭하기 위한 상기 수단, 패시베이션 층을 증착하기 위한 상기 수단 및 패시베이션 층을 선택적으로 제거하기 위한 상기 수단이 단일 챔버와 결합되는 것을 특징으로 하는 기판 물질이나 기판 물질의 표면 위에 존재하는 필름을 처리하는 방법을 실행하기 위한 장치.
- 제 1 항 내지 제 26 항에 따른 기판 물질이나 기판 물질의 표면 위에 존재하는 필름을 처리하는 방법을 실행하기 위한 장치에 있어서, 상기 장치는,- 기판 물질이나 기판 물질의 표면 위에 존재하는 필름을 한가지 이상의 화학물질로 에칭하기 위한 수단,- 에칭된 특징부의 표면에 패시베이션 층을 증착하기 위한 수단, 그리고- 상기 기판 물질이나 필름의 표면에 수직인 방향으로 에칭을 진행하기 위해 에칭된 특징부로부터 상기 패시베이션층을 선택적으로 제거하기 위한 수단을 포함하며, 이때, 기판 물질이나 필름을 에칭하기 위한 상기 수단, 패시베이션 층을 증착하기 위한 상기 수단, 그리고 패시베이션 층을 선택적으로 제거하기 위한 상기 수단은 기판을 배치한 한개의 동일한 챔버, 또는 한개의 별도의 챔버에 결합되는 것을 특징으로 하는 기판 물질이나 기판 물질의 표면 위에 존재하는 필름을 처리하는 방법을 실행하기 위한 장치.
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Applications Claiming Priority (10)
Application Number | Priority Date | Filing Date | Title |
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GBGB9815931.2A GB9815931D0 (en) | 1998-07-23 | 1998-07-23 | Method and apparatus for anisotropic etching |
GBGB9823364.6A GB9823364D0 (en) | 1998-10-27 | 1998-10-27 | Method and apparatus for anisotropic etching |
GB9904925.6 | 1999-03-04 | ||
GBGB9904925.6A GB9904925D0 (en) | 1999-03-04 | 1999-03-04 | Gas delivery system |
GBGB9910725.2A GB9910725D0 (en) | 1999-05-11 | 1999-05-11 | Method and apparatus for antisotropic etching |
GB9815931.2 | 1999-05-18 | ||
GBGB9911401.9A GB9911401D0 (en) | 1999-05-18 | 1999-05-18 | Method and apparatus for anisotropic etching |
GB9910725.2 | 1999-05-18 | ||
GB9911401.9 | 1999-05-18 | ||
GB9823364.6 | 1999-05-18 |
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EP (1) | EP1099244B1 (ko) |
JP (1) | JP4698024B2 (ko) |
KR (1) | KR100639841B1 (ko) |
AT (1) | ATE352868T1 (ko) |
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WO2000005749A2 (en) | 2000-02-03 |
KR20010072054A (ko) | 2001-07-31 |
ATE352868T1 (de) | 2007-02-15 |
WO2000005749A3 (en) | 2000-07-27 |
US7141504B1 (en) | 2006-11-28 |
EP1099244B1 (en) | 2007-01-24 |
JP4698024B2 (ja) | 2011-06-08 |
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