JP2017152531A - 基板処理方法 - Google Patents
基板処理方法 Download PDFInfo
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- JP2017152531A JP2017152531A JP2016033294A JP2016033294A JP2017152531A JP 2017152531 A JP2017152531 A JP 2017152531A JP 2016033294 A JP2016033294 A JP 2016033294A JP 2016033294 A JP2016033294 A JP 2016033294A JP 2017152531 A JP2017152531 A JP 2017152531A
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- etching
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- sio
- silicon oxide
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- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
表面部に、第1のシリコン酸化層と前記第1のシリコン酸化膜とは膜質が異なる第2のシリコン酸化層とが並んで形成された基板をエッチングする基板処理方法において、
ハロゲンを含むガスを活性化せずに前記基板に供給し、シリコン酸化層と反応して生成された反応生成物を昇華させる第1のエッチング工程と、
ハロゲンを含むガスを活性化して得られたラジカルにより、前記基板に対してエッチングを行う第2のエッチング工程と、を含むことを特徴とする。
NF3+NH3+e→3F*+2N*+3H* ・・・(1)
F*+N*+4H*→NH4F ・・・(2)
NF3+3NH3→NH4F+N2 ・・・(3)
6NH4F+SiO2→(NH4)2SiF6+2H2O+4NH3 ・・・(4)
このため、上述の実施形態では、第2のSiO2層14のエッチング速度が第1のSiO2層13のエッチング速度よりも大きいCOR処理(第1のエッチング工程)と、第1のSiO2層13のエッチング速度が第2のSiO2層14のエッチング速度よりも大きいラジカル処理(第2のエッチング工程)と、を行っている。これにより、第1のSiO2層13と第2のSiO2層14のエッチング速度を制御して、エッチング後の互いのSiO2層の表面高さを調整することができる。
ここで挙げた処理ガスは、ハロゲンとしてフッ素を含むガスの例であるが、フッ素の代わりに臭素(Br)を含むガスを用いてもよい。具体的にはHFガスに代えてHBrガスを用いる例、NH4Fガスに代えてNH4Brガスを用いる例などを挙げることができる。
SiO2+4HF→SiF4+2H2O ・・・(5)
SiF4+2NH3+2HF→(NH4)2SiF6 ・・・(6)
NF3ガスやHFガスと混合されるガスとしては、NH3ガスに限らずエタノールの蒸気や水蒸気などであってもよい。
また、上述の実施形態では、第1のエッチング工程の後に第2のエッチング工程を実施したが、第2のエッチング工程を先に実施し、次いで第1のエッチング工程を実施するようにしてもよい。
本発明の実施の形態の効果を検証するために行った実施例について記載する。
(実施例1)
図2(a)に示す表面構造のウエハに対してCOR処理(第1のエッチング工程)を実施したものを用いて、図6に示すラジカル処理装置にて、NF3ガスとNH3ガスの混合ガスを用いて、ラジカル処理(第2のエッチング工程)を実施した。そのときのエッチング条件は、ウエハW温度:25℃〜150℃、NF3ガスの流量:50sccm〜500sccm、NH3ガスの流量:100sccm〜1000sccm、Arガスの流量:50sccm〜500sccm、処理容器内の圧力:30Pa〜200Pa、高周波電力:100W〜1200Wである。
12 突壁部
13 第1のシリコン酸化層(SiO2層)
14 第2のシリコン酸化層
2 COR処理装置
6 ラジカル処理装置
Claims (6)
- 表面部に、第1のシリコン酸化層と前記第1のシリコン酸化膜とは膜質が異なる第2のシリコン酸化層とが並んで形成された基板をエッチングする基板処理方法において、
ハロゲンを含むガスを活性化せずに前記基板に供給し、シリコン酸化層と反応して生成された反応生成物を昇華させる第1のエッチング工程と、
ハロゲンを含むガスを活性化して得られたラジカルにより、前記基板に対してエッチングを行う第2のエッチング工程と、を含むことを特徴とする基板処理方法。 - 前記プラズマは、複数のガス通過用の開口部が形成されたイオントラップ部材を通過した後に前記基板に供給されることを特徴とする請求項1記載の基板処理方法。
- 前記第1のシリコン酸化層は、シリコン層を酸化雰囲気で加熱して得られた熱酸化層であることを特徴とする請求項1または2記載の基板処理方法。
- 前記第2のシリコン酸化層は、原料ガスと酸化ガスとを反応させて成膜されたシリコン酸化層であることを特徴とする請求項1ないし3のいずれか一項に記載の基板処理方法。
- 基板の表面にシリコン層の複数の突壁部が間隔を置いて平行状に配列され、
前記第1のシリコン酸化層は、シリコン層を酸化雰囲気で加熱して得られた熱酸化層であって、前記突壁部の表面を被覆している被覆層であり、
前記第2のシリコン酸化層は、原料ガスと酸化ガスとを反応させて成膜されたシリコン酸化層であって、互に隣接する前記突壁部同士の間に埋め込まれていることを特徴とする請求項1ないし4のいずれか一項に記載の基板処理方法。 - 前記第1のエッチング工程及び第2のエッチング工程が終了した時に、前記第1のシリコン酸化層及び前記第2のシリコン酸化層の各上面の高さが揃うように、前記第1のエッチング工程及び第2のエッチング工程の各々の処理時間が設定されていることを特徴とする請求項1ないし5のいずれか一項に記載の基板処理方法。
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