KR100398303B1 - 다결정 실리콘의 평가 방법 - Google Patents
다결정 실리콘의 평가 방법 Download PDFInfo
- Publication number
- KR100398303B1 KR100398303B1 KR10-2001-0036295A KR20010036295A KR100398303B1 KR 100398303 B1 KR100398303 B1 KR 100398303B1 KR 20010036295 A KR20010036295 A KR 20010036295A KR 100398303 B1 KR100398303 B1 KR 100398303B1
- Authority
- KR
- South Korea
- Prior art keywords
- polycrystalline silicon
- liquid
- etching
- silicon
- raw material
- Prior art date
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 62
- 238000000034 method Methods 0.000 title claims abstract description 19
- 239000007788 liquid Substances 0.000 claims abstract description 41
- 239000002994 raw material Substances 0.000 claims abstract description 18
- 239000000126 substance Substances 0.000 claims description 22
- 238000011156 evaluation Methods 0.000 claims description 17
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 10
- 238000001914 filtration Methods 0.000 claims description 4
- 238000004458 analytical method Methods 0.000 claims description 3
- 238000005259 measurement Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 abstract description 26
- 239000002245 particle Substances 0.000 abstract description 25
- 239000013078 crystal Substances 0.000 abstract description 18
- 239000000843 powder Substances 0.000 abstract description 7
- 239000010419 fine particle Substances 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 230000007547 defect Effects 0.000 description 5
- 230000008014 freezing Effects 0.000 description 5
- 238000007710 freezing Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 239000004809 Teflon Substances 0.000 description 3
- 229920006362 Teflon® Polymers 0.000 description 3
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- JVJQPDTXIALXOG-UHFFFAOYSA-N nitryl fluoride Chemical compound [O-][N+](F)=O JVJQPDTXIALXOG-UHFFFAOYSA-N 0.000 description 2
- -1 polyethylene Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920013716 polyethylene resin Polymers 0.000 description 1
- 238000013441 quality evaluation Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 238000000550 scanning electron microscopy energy dispersive X-ray spectroscopy Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/0095—Semiconductive materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Immunology (AREA)
- Pathology (AREA)
- General Physics & Mathematics (AREA)
- General Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- Physics & Mathematics (AREA)
- Dispersion Chemistry (AREA)
- Food Science & Technology (AREA)
- Medicinal Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Sampling And Sample Adjustment (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
Description
Claims (3)
- 단결정 실리콘의 성장의 원료로서 이용하는 다결정 실리콘의 평가 방법에 있어서,상기 다결정 실리콘을 용해할 수 있는 약액 중에 덩어리형 혹은 편형의 다결정 실리콘을 침지시킨 후, 상기 약액 중에 함유되는 이물의 수를 측정하는 것을 특징으로 하는 다결정 실리콘의 평가 방법.
- 제1항에 있어서,상기 약액 중에 함유되는 이물수의 측정 외에, 상기 이물의 성분 분석을 하는 것을 특징으로 하는 다결정 실리콘의 평가 방법.
- 제1항 또는 제2항에 있어서,조(槽) 내에 수용한 약액 중에 상기 다결정 실리콘을 침지시키기 전에, 상기 약액을 미리 순환 여과를 해두는 것을 특징으로 하는 다결정 실리콘의 평가 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000191744A JP3569662B2 (ja) | 2000-06-26 | 2000-06-26 | 多結晶シリコンの評価方法 |
JP2000-191744 | 2000-06-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20020019378A KR20020019378A (ko) | 2002-03-12 |
KR100398303B1 true KR100398303B1 (ko) | 2003-09-19 |
Family
ID=18690994
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2001-0036295A KR100398303B1 (ko) | 2000-06-26 | 2001-06-25 | 다결정 실리콘의 평가 방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6916657B2 (ko) |
JP (1) | JP3569662B2 (ko) |
KR (1) | KR100398303B1 (ko) |
CN (1) | CN1229528C (ko) |
DE (1) | DE10129489B4 (ko) |
TW (1) | TWI253483B (ko) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102010039752A1 (de) | 2010-08-25 | 2012-03-01 | Wacker Chemie Ag | Polykristallines Silicium und Verfahren zu dessen Herstellung |
DE102012218747A1 (de) | 2012-10-15 | 2014-04-17 | Wacker Chemie Ag | Verfahren zur Abscheidung von polykristallinem Silicium |
JP6175909B2 (ja) * | 2013-05-31 | 2017-08-09 | 三菱マテリアル株式会社 | 多結晶シリコン洗浄方法及び多結晶シリコン洗浄装置 |
US10345211B2 (en) * | 2016-03-28 | 2019-07-09 | Hemlock Semiconductor Operations Llc | Method of determining a concentration of a material not dissolved by silicon etchants contaminating a product |
CN109738451A (zh) * | 2019-01-25 | 2019-05-10 | 江苏金晖光伏有限公司 | 一种单、多晶硅料的筛选检测方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02259563A (ja) * | 1989-03-31 | 1990-10-22 | Shin Etsu Handotai Co Ltd | Cz単結晶シリコン中の金属不純物濃度の定量方法 |
JPH06188296A (ja) * | 1992-12-17 | 1994-07-08 | Komatsu Denshi Kinzoku Kk | 半導体単結晶の欠陥検出方法 |
JPH08306753A (ja) * | 1995-05-10 | 1996-11-22 | Nippon Steel Corp | シリコンウェハの品質評価方法 |
JPH11304791A (ja) * | 1998-04-24 | 1999-11-05 | Tokuyama Corp | 多結晶シリコンの不純物分析方法 |
KR20000040115A (ko) * | 1998-12-17 | 2000-07-05 | 김영환 | 오존 분포도 측정방법 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4213937A (en) * | 1976-09-22 | 1980-07-22 | Texas Instruments Incorporated | Silicon refinery |
JP3156878B2 (ja) * | 1992-04-30 | 2001-04-16 | 株式会社東芝 | 半導体装置およびその製造方法 |
JPH05319990A (ja) | 1992-05-20 | 1993-12-03 | Toshiba Ceramics Co Ltd | 粒状シリコン原料の製造方法 |
JP3150222B2 (ja) | 1993-03-25 | 2001-03-26 | 三菱電機株式会社 | 半導体製造装置 |
JPH0737850A (ja) * | 1993-07-20 | 1995-02-07 | Mitsubishi Electric Corp | 洗浄装置 |
JPH0817815A (ja) * | 1994-06-30 | 1996-01-19 | Toshiba Corp | 半導体デバイスの製造方法、半導体基板の処理方法、分析方法及び製造方法 |
JPH0848512A (ja) | 1994-08-10 | 1996-02-20 | Tokuyama Corp | 多結晶シリコン粒子 |
US5793833A (en) * | 1995-06-22 | 1998-08-11 | Shin-Etsu Handotai Co., Ltd. | Method of and apparatus for measuring and estimating the cleanliness of wafer accommodating members |
JPH11145230A (ja) * | 1997-11-10 | 1999-05-28 | Sony Corp | 多結晶シリコン膜の分析方法 |
JPH11162859A (ja) * | 1997-11-28 | 1999-06-18 | Canon Inc | シリコン結晶の液相成長方法及びそれを用いた太陽電池の製造方法 |
JPH11171685A (ja) | 1997-12-05 | 1999-06-29 | Toshiba Ceramics Co Ltd | シリコン単結晶引上装置 |
US6172376B1 (en) * | 1997-12-17 | 2001-01-09 | American Air Liquide Inc. | Method and system for measuring particles in a liquid sample |
WO2000001016A1 (fr) * | 1998-06-30 | 2000-01-06 | Matsushita Electric Industrial Co., Ltd. | Transistor a film mince et son procede de fabrication |
JP3534172B2 (ja) | 1998-10-20 | 2004-06-07 | 三菱住友シリコン株式会社 | ポリシリコンの洗浄方法 |
-
2000
- 2000-06-26 JP JP2000191744A patent/JP3569662B2/ja not_active Expired - Lifetime
-
2001
- 2001-05-31 TW TW090113172A patent/TWI253483B/zh not_active IP Right Cessation
- 2001-05-31 US US09/867,418 patent/US6916657B2/en not_active Expired - Lifetime
- 2001-06-21 DE DE10129489A patent/DE10129489B4/de not_active Expired - Lifetime
- 2001-06-25 KR KR10-2001-0036295A patent/KR100398303B1/ko active IP Right Grant
- 2001-06-26 CN CNB011218916A patent/CN1229528C/zh not_active Expired - Lifetime
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02259563A (ja) * | 1989-03-31 | 1990-10-22 | Shin Etsu Handotai Co Ltd | Cz単結晶シリコン中の金属不純物濃度の定量方法 |
JPH06188296A (ja) * | 1992-12-17 | 1994-07-08 | Komatsu Denshi Kinzoku Kk | 半導体単結晶の欠陥検出方法 |
JPH08306753A (ja) * | 1995-05-10 | 1996-11-22 | Nippon Steel Corp | シリコンウェハの品質評価方法 |
JPH11304791A (ja) * | 1998-04-24 | 1999-11-05 | Tokuyama Corp | 多結晶シリコンの不純物分析方法 |
KR20000040115A (ko) * | 1998-12-17 | 2000-07-05 | 김영환 | 오존 분포도 측정방법 |
Also Published As
Publication number | Publication date |
---|---|
JP3569662B2 (ja) | 2004-09-22 |
US20020000186A1 (en) | 2002-01-03 |
DE10129489B4 (de) | 2012-08-16 |
US6916657B2 (en) | 2005-07-12 |
CN1229528C (zh) | 2005-11-30 |
DE10129489A1 (de) | 2002-02-21 |
JP2002005812A (ja) | 2002-01-09 |
TWI253483B (en) | 2006-04-21 |
KR20020019378A (ko) | 2002-03-12 |
CN1330173A (zh) | 2002-01-09 |
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