CN110133023B - 多晶硅选择方法、多晶硅及其在直拉法中的应用 - Google Patents
多晶硅选择方法、多晶硅及其在直拉法中的应用 Download PDFInfo
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- CN110133023B CN110133023B CN201910414330.8A CN201910414330A CN110133023B CN 110133023 B CN110133023 B CN 110133023B CN 201910414330 A CN201910414330 A CN 201910414330A CN 110133023 B CN110133023 B CN 110133023B
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- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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- C30B29/06—Silicon
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- G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
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- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/645—Specially adapted constructive features of fluorimeters
- G01N21/6456—Spatial resolved fluorescence measurements; Imaging
- G01N21/6458—Fluorescence microscopy
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- G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
- G01N23/04—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and forming images of the material
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- G—PHYSICS
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- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
- G01N23/20008—Constructional details of analysers, e.g. characterised by X-ray source, detector or optical system; Accessories therefor; Preparing specimens therefor
- G01N23/2005—Preparation of powder samples therefor
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- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
- G01N23/207—Diffractometry using detectors, e.g. using a probe in a central position and one or more displaceable detectors in circumferential positions
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/2202—Preparing specimens therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
- G01N2001/2866—Grinding or homogeneising
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CN201910414330.8A CN110133023B (zh) | 2019-05-17 | 2019-05-17 | 多晶硅选择方法、多晶硅及其在直拉法中的应用 |
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Citations (10)
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CN101311351A (zh) * | 2007-05-16 | 2008-11-26 | 瓦克化学有限公司 | 用于区域精制的多晶硅棒及其生产方法 |
CN103547713A (zh) * | 2011-06-02 | 2014-01-29 | 信越化学工业株式会社 | 多晶硅棒的选择方法及单晶硅的制造方法 |
CN105393112A (zh) * | 2013-06-21 | 2016-03-09 | 信越化学工业株式会社 | 多晶硅的晶体性评价方法 |
JP2016108160A (ja) * | 2014-12-02 | 2016-06-20 | 株式会社Sumco | シリコン単結晶の育成方法 |
WO2017038347A1 (ja) * | 2015-09-04 | 2017-03-09 | 信越化学工業株式会社 | 多結晶シリコン棒の製造方法およびfz単結晶シリコンの製造方法 |
CN107083566A (zh) * | 2016-02-12 | 2017-08-22 | 信越化学工业株式会社 | 多晶硅和多晶硅的选择方法 |
CN107268079A (zh) * | 2016-04-04 | 2017-10-20 | 信越化学工业株式会社 | 多晶硅、fz单晶硅以及它们的制造方法 |
CN108660509A (zh) * | 2017-03-27 | 2018-10-16 | 上海新昇半导体科技有限公司 | 一种直拉单晶硅方法 |
CN109252215A (zh) * | 2017-07-12 | 2019-01-22 | 信越化学工业株式会社 | 多晶硅棒和多晶硅棒的制造方法 |
CN109694076A (zh) * | 2017-10-20 | 2019-04-30 | 信越化学工业株式会社 | 多晶硅棒和单晶硅的制造方法 |
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2019
- 2019-05-17 CN CN201910414330.8A patent/CN110133023B/zh active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101311351A (zh) * | 2007-05-16 | 2008-11-26 | 瓦克化学有限公司 | 用于区域精制的多晶硅棒及其生产方法 |
CN103547713A (zh) * | 2011-06-02 | 2014-01-29 | 信越化学工业株式会社 | 多晶硅棒的选择方法及单晶硅的制造方法 |
CN105393112A (zh) * | 2013-06-21 | 2016-03-09 | 信越化学工业株式会社 | 多晶硅的晶体性评价方法 |
JP2016108160A (ja) * | 2014-12-02 | 2016-06-20 | 株式会社Sumco | シリコン単結晶の育成方法 |
WO2017038347A1 (ja) * | 2015-09-04 | 2017-03-09 | 信越化学工業株式会社 | 多結晶シリコン棒の製造方法およびfz単結晶シリコンの製造方法 |
CN107083566A (zh) * | 2016-02-12 | 2017-08-22 | 信越化学工业株式会社 | 多晶硅和多晶硅的选择方法 |
CN107268079A (zh) * | 2016-04-04 | 2017-10-20 | 信越化学工业株式会社 | 多晶硅、fz单晶硅以及它们的制造方法 |
CN108660509A (zh) * | 2017-03-27 | 2018-10-16 | 上海新昇半导体科技有限公司 | 一种直拉单晶硅方法 |
CN109252215A (zh) * | 2017-07-12 | 2019-01-22 | 信越化学工业株式会社 | 多晶硅棒和多晶硅棒的制造方法 |
CN109694076A (zh) * | 2017-10-20 | 2019-04-30 | 信越化学工业株式会社 | 多晶硅棒和单晶硅的制造方法 |
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Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Patentee after: Xi'an Yisiwei Material Technology Co.,Ltd. Patentee after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Patentee before: Xi'an yisiwei Material Technology Co.,Ltd. Patentee before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |
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