JPWO2018037736A1 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JPWO2018037736A1 JPWO2018037736A1 JP2018535509A JP2018535509A JPWO2018037736A1 JP WO2018037736 A1 JPWO2018037736 A1 JP WO2018037736A1 JP 2018535509 A JP2018535509 A JP 2018535509A JP 2018535509 A JP2018535509 A JP 2018535509A JP WO2018037736 A1 JPWO2018037736 A1 JP WO2018037736A1
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- insulating film
- interlayer insulating
- stress relaxation
- electrode
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 141
- 239000010410 layer Substances 0.000 claims abstract description 189
- 239000011229 interlayer Substances 0.000 claims abstract description 120
- 239000000463 material Substances 0.000 claims abstract description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims description 80
- 239000002184 metal Substances 0.000 claims description 80
- 230000004888 barrier function Effects 0.000 claims description 77
- 239000004020 conductor Substances 0.000 claims description 5
- 230000002040 relaxant effect Effects 0.000 claims description 2
- 239000013078 crystal Substances 0.000 abstract description 17
- 238000009413 insulation Methods 0.000 abstract 1
- 239000010949 copper Substances 0.000 description 127
- 230000035882 stress Effects 0.000 description 106
- 239000000758 substrate Substances 0.000 description 13
- 229910010271 silicon carbide Inorganic materials 0.000 description 11
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 230000006378 damage Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- -1 W (tungsten) Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910008482 TiSiN Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
<A−1.構成>
図1は、本発明の実施の形態1に係るパワー半導体素子12の構造を示す断面図である。以下、パワー半導体素子12の構成について説明する。パワー半導体素子12の基板には、SiC基板3を用い、これに素子構造を形成する。SiC基板を用いる場合、従来用いられているSi基板に比べて、低損失で、高速動作および高温動作が可能な半導体素子を作成することができる。図1では、パワー半導体素子12をMOSFET(Metal-Oxide-Semiconductor Field-Effect-Transistor)として示している。
応力緩和層13の一部または全部が、SiO2からなる層間絶縁膜7よりも破壊靱性値が大きいバリアメタル層14で構成されていても良い。図3は、応力緩和層13の一部がバリアメタル層14で構成された半導体装置102の構造を示す断面図である。応力緩和層13以外、半導体装置102の構成は半導体装置101と同様である。
実施の形態1に係る半導体装置101は、半導体層であるソース領域5と、ソース領域5上に開口部を有して形成され、酸化珪素からなる層間絶縁膜7と、層間絶縁膜7の開口部を介してソース領域5と電気的に接続し、その端部が層間絶縁膜7の端部の内側の層間絶縁膜7上に位置するCu電極1と、Cu電極1と層間絶縁膜7との間に形成され、層間絶縁膜7より破壊靭性値が大きい材料からなり、Cu電極1の端部の内側から外側に亘って設けられる応力緩和層13と、を備える。従って、層間絶縁膜7とCu電極1によって、Cuワイヤボンディング時の衝撃を吸収し、半導体素子の素子不良を抑制することができる。また、高温時のCu結晶粒の成長によりCu電極1から生じる応力を応力緩和層13で緩和することが出来るので、層間絶縁膜7におけるクラックの発生を抑制することができる。
<B−1.構成>
図4は、本発明の実施の形態2に係る半導体装置103の構造を示す断面図である。半導体装置103は、応力緩和層13の一部をSiO2からなる層間絶縁膜7よりも破壊靱性値が大きいバリアメタル層14で構成する点は半導体装置102と同様であるが、バリアメタル層14を層間絶縁膜7と非バリアメタル応力緩和層21との間に設ける点が、半導体装置102と異なる。それ以外の半導体装置103の構成は、半導体装置102と同様である。
実施の形態2に係る半導体装置103によれば、応力緩和層13は、バリアメタル層14と、非バリアメタル応力緩和層21とを備え、バリアメタル層14は、層間絶縁膜7の開口部における半導体層5上から層間絶縁膜7上に亘って形成される。すなわち、バリアメタル層14は、非バリアメタル応力緩和層21と層間絶縁膜7との間に形成される。従って、Cu電極1の端部がバリアメタル層14に接触しないため、高温時のCu結晶粒の成長に起因して発生する応力によるバリアメタル層14への損傷を抑制することができるので、高温動作の信頼性を高めることができる。
<C−1.構成>
図5は、本発明の実施の形態3に係る半導体装置104の構造を示す断面図である。実施の形態1および実施の形態2では、応力緩和層13は、層間絶縁膜7の開口部上に開口部を有しており、応力緩和層13の開口部を介してCu電極1とパワー半導体素子12のソース領域5とが電気的に接続していた。これに対して実施の形態3では、層間絶縁膜7の開口部から層間絶縁膜7上に亘って、Cu電極1の下方全体に応力緩和層13を形成する構成とする。このような構成であっても、応力緩和層13を電気伝導体で形成することにより、Cu電極1は層間絶縁膜7の開口部において、応力緩和層13を介してパワー半導体素子12のソース領域5と電気的に接続される。応力緩和層13の材料として、Al等が挙げられる。応力緩和層13の厚さは100nm以上であることが望ましく、200nm以上であればより確実に層間絶縁膜7へのクラックの発生を抑制することができる。
応力緩和層13の一部または全部が、SiO2からなる層間絶縁膜7よりも破壊靱性値が大きいバリアメタル層14で構成されていても良い。図6は、応力緩和層13の一部がバリアメタル層14で構成された半導体装置105の構造を示す断面図である。応力緩和層13以外、半導体装置105の構成は半導体装置104と同様である。
実施の形態3に係る半導体装置104によれば、応力緩和層13は、電気伝導体により形成され、層間絶縁膜7の開口部から層間絶縁膜7上に亘って形成される。従って、層間絶縁膜7の開口部を介してCu電極1がパワー半導体素子12の半導体層に電気的に接続されるため、Cu電極1の電気抵抗を低くすることができる。また、Cu電極1の下部全体を応力緩和層13が覆うことにより、高温時のCu結晶粒の成長に起因する応力を効率的に応力緩和層13へ吸収させることができる。従って、層間絶縁膜7におけるクラックの発生を抑制でき、高温動作の信頼性を高めることができる。
<D−1.構成>
図7は、本発明の実施の形態4に係る半導体装置106の構造を示す断面図である。実施の形態1、実施の形態2および実施の形態3では、Cuワイヤ16がCu電極1に接合されていた。これに対して実施の形態4では、パワーモジュールの主電極配線19が直接Cu電極1に接合される。主電極配線19とCu電極1は、図7に示すはんだ等の接合材20を用いて接合されても良いし、接合材を用いずに超音波接合を用いて接合されても良い。
実施の形態4に係る半導体装置106によれば、主電極配線19が直接Cu電極1に接合される。従って、実施の形態1、実施の形態2および実施の形態3と比較してパワーデバイスのスイッチング動作の繰り返しに起因する熱ストレスによるCu電極1上部の疲労寿命を改善することが可能であり、加えてパワーモジュールのインピーダンスを低減することが可能である。また、高温時のCu結晶粒の成長によりCu電極1から生じる応力を応力緩和層13で緩和することが出来るので、フィールド絶縁膜7におけるクラックの発生を抑制することができ、高温動作の信頼性を高めることができる。
本発明に係る第2の半導体装置は、半導体層と、半導体層上に開口部を有して形成され、酸化珪素からなる層間絶縁膜と、層間絶縁膜の開口部を介して半導体層と電気的に接続し、その端部が層間絶縁膜の端部の内側の層間絶縁膜上に位置するCu電極と、Cu電極と層間絶縁膜との間に形成され、層間絶縁膜より破壊靭性値が大きい材料からなり、Cu電極の端部の内側から外側に亘って設けられる応力緩和層と、を備え、応力緩和層は、バリアメタル層と、非バリアメタル応力緩和層とを備え、バリアメタル層は、層間絶縁膜の開口部における半導体層上から層間絶縁膜上に亘って形成される。
本発明に係る第3の半導体装置は、半導体層と、半導体層上に開口部を有して形成され、酸化珪素からなる層間絶縁膜と、層間絶縁膜の開口部を介して半導体層と電気的に接続し、その端部が層間絶縁膜の端部の内側の層間絶縁膜上に位置するCu電極と、Cu電極と層間絶縁膜との間に形成され、層間絶縁膜より破壊靭性値が大きい材料からなり、Cu電極の端部の内側から外側に亘って設けられる応力緩和層と、を備え、応力緩和層は、電気伝導体により形成され、層間絶縁膜の開口部から層間絶縁膜上に亘って形成される。
Claims (13)
- 半導体層(5)と、
前記半導体層(5)上に開口部を有して形成され、酸化珪素からなる層間絶縁膜(7)と、
前記層間絶縁膜(7)の開口部を介して前記半導体層(5)と電気的に接続し、その端部が前記層間絶縁膜(7)の端部の内側の前記層間絶縁膜(7)上に位置するCu電極(1)と、
前記Cu電極(1)と前記層間絶縁膜(7)との間に形成され、前記層間絶縁膜(7)より破壊靭性値が大きい材料からなり、前記Cu電極(1)の端部の内側から外側に亘って設けられる応力緩和層(13)と、を備える、
半導体装置。 - 前記応力緩和層(13)の厚みは100nm以上である、
請求項1に記載の半導体装置。 - 前記応力緩和層(13)の厚みは200nm以上である、
請求項2に記載の半導体装置。 - 前記応力緩和層(13)は、前記層間絶縁膜(7)の開口部上に開口部を有して形成され、前記応力緩和層(13)の開口部端が前記層間絶縁膜(7)の開口部端よりも内側に位置する、
請求項1から3のいずれか1項に記載の半導体装置。 - 前記応力緩和層(13)の一部または全部がバリアメタル層(14)である、
請求項1から3のいずれか1項に記載の半導体装置。 - 前記応力緩和層(13)は、前記バリアメタル層(14)と、非バリアメタル応力緩和層(21)とを備え、
前記非バリアメタル応力緩和層(21)は、前記層間絶縁膜(7)の開口部上に開口部を有して形成され、
前記バリアメタル層は、前記非バリアメタル応力緩和層(21)の開口部における前記半導体層(5)上から前記非バリアメタル応力緩和層(21)上に亘って形成され、その端部が前記Cu電極(1)の端部よりも外側に位置する、
請求項5に記載の半導体装置。 - 前記応力緩和層(13)は、前記バリアメタル層(14)と、非バリアメタル応力緩和層(21)とを備え、
前記バリアメタル層(14)は、前記層間絶縁膜(7)の開口部における前記半導体層(5)上から前記層間絶縁膜(7)上に亘って形成される、
請求項5に記載の半導体装置。 - 前記応力緩和層(13)は、電気伝導体により形成され、前記層間絶縁膜(7)の開口部から前記層間絶縁膜(7)上に亘って形成される、
請求項1から3のいずれか1項に記載の半導体装置。 - 前記応力緩和層(13)は、バリアメタル層(14)と、非バリアメタル応力緩和層(21)とを備え、
前記バリアメタル層(14)は、前記非バリアメタル応力緩和層(21)と前記Cu電極(1)との間に設けられる、
請求項8に記載の半導体装置。 - 前記Cu電極(1)の厚みは15μm以上である、
請求項1から9のいずれか1項に記載の半導体装置。 - 前記Cu電極(1)上にCuワイヤ(16)が接合される、
請求項1から10のいずれか1項に記載の半導体装置。 - 前記Cu電極(1)上に主電極配線(19)が接合される、
請求項1から10のいずれか1項に記載の半導体装置。 - 前記半導体層(5)はSiCである、
請求項1から12のいずれか1項に記載の半導体装置。
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JPH01220850A (ja) * | 1988-02-29 | 1989-09-04 | Sharp Corp | 半導体装置の電極構造 |
JPH10199925A (ja) * | 1997-01-06 | 1998-07-31 | Sony Corp | 半導体装置及びその製造方法 |
JP2003282574A (ja) * | 2003-02-26 | 2003-10-03 | Mitsubishi Electric Corp | 半導体装置 |
JP2011222963A (ja) * | 2010-01-15 | 2011-11-04 | Rohm Co Ltd | 半導体装置およびその製造方法 |
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JPH01220850A (ja) * | 1988-02-29 | 1989-09-04 | Sharp Corp | 半導体装置の電極構造 |
JPH10199925A (ja) * | 1997-01-06 | 1998-07-31 | Sony Corp | 半導体装置及びその製造方法 |
JP2003282574A (ja) * | 2003-02-26 | 2003-10-03 | Mitsubishi Electric Corp | 半導体装置 |
JP2011222963A (ja) * | 2010-01-15 | 2011-11-04 | Rohm Co Ltd | 半導体装置およびその製造方法 |
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