JPS6161865U - - Google Patents
Info
- Publication number
- JPS6161865U JPS6161865U JP14706984U JP14706984U JPS6161865U JP S6161865 U JPS6161865 U JP S6161865U JP 14706984 U JP14706984 U JP 14706984U JP 14706984 U JP14706984 U JP 14706984U JP S6161865 U JPS6161865 U JP S6161865U
- Authority
- JP
- Japan
- Prior art keywords
- laser
- light receiving
- receiving element
- stem
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000012544 monitoring process Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Description
第１図及び第２図は本考案半導体レーザ装置の
実施の一例を説明するためのものであつて、第１
図は装置全体を示す分解斜視図、第２図は要部を
示す断面図、第３図は本考案半導体レーザ装置の
別の実施例の要部を示す断面図、第４図は従来例
を示す断面図である。
符号の説明、１……ステム、４…ヒートシンク
、５…レーザ接続面、６…半導体レーザ、７…モ
ニター用受光素子、９…レーザ素子、１３，１３
ａ…ミラー。
1 and 2 are for explaining an example of implementation of the semiconductor laser device of the present invention.
The figure is an exploded perspective view showing the entire device, FIG. 2 is a sectional view showing the main parts, FIG. 3 is a sectional view showing the main parts of another embodiment of the semiconductor laser device of the present invention, and FIG. 4 is a conventional example. FIG. Explanation of symbols, 1... Stem, 4... Heat sink, 5... Laser connection surface, 6... Semiconductor laser, 7... Light receiving element for monitor, 9... Laser element, 13, 13
a...Mirror.
Claims (1)
するヒートシンクが形成され、該ヒートシンクの
上記レーザ接続面に、モニター用受光素子が形成
された半導体基板表面の一部にレーザ素子を設け
てなる受光素子付半導体レーザを受光素子がレー
ザ素子よりもステム寄りに位置するように接続し
てなる半導体レーザ装置であつて、上記ステム表
面に上記レーザ素子からのレーザ光を受光素子へ
向けて反射するミラーを形成してなることを特徴
とする半導体レーザ装置。 A heat sink having a laser connection surface substantially perpendicular to the stem surface is formed, and the laser connection surface of the heat sink is equipped with a light receiving element in which a laser element is provided on a part of the surface of a semiconductor substrate on which a monitoring light receiving element is formed. A semiconductor laser device comprising a semiconductor laser connected such that a light receiving element is located closer to a stem than the laser element, wherein a mirror is formed on the surface of the stem to reflect laser light from the laser element toward the light receiving element. A semiconductor laser device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14706984U JPS6161865U (en) | 1984-09-28 | 1984-09-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14706984U JPS6161865U (en) | 1984-09-28 | 1984-09-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6161865U true JPS6161865U (en) | 1986-04-25 |
Family
ID=30705308
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14706984U Pending JPS6161865U (en) | 1984-09-28 | 1984-09-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6161865U (en) |
-
1984
- 1984-09-28 JP JP14706984U patent/JPS6161865U/ja active Pending