JPH02102756U - - Google Patents
Info
- Publication number
- JPH02102756U JPH02102756U JP1091789U JP1091789U JPH02102756U JP H02102756 U JPH02102756 U JP H02102756U JP 1091789 U JP1091789 U JP 1091789U JP 1091789 U JP1091789 U JP 1091789U JP H02102756 U JPH02102756 U JP H02102756U
- Authority
- JP
- Japan
- Prior art keywords
- submount
- thermal expansion
- semiconductor laser
- fixing member
- coefficient
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims 1
- 238000005219 brazing Methods 0.000 description 2
Description
第１図は、本考案の半導体レーザーの一実施例
の構成を示す斜視図、第２図ａ，ｂ，ｃ，ｄは、
第１図に示される一実施例におけるサブマウント
の構成例を示す―線断面図である。
１……レーザダイオード、２……サブマウント
、２ａ……ロウ付、３……固定部材、３ａ……ロ
ウ付、５……第１の材料、６……第２の材料。
FIG. 1 is a perspective view showing the configuration of an embodiment of the semiconductor laser of the present invention, and FIGS. 2a, b, c, and d are
FIG. 2 is a cross-sectional view taken along the line 1-2, showing an example of the configuration of the submount in the embodiment shown in FIG. 1. FIG. DESCRIPTION OF SYMBOLS 1...Laser diode, 2...Submount, 2a...With brazing, 3...Fixing member, 3a...With brazing, 5...First material, 6...Second material.
Claims (1)
ヒートシンクを兼ねる固定部材、からなる半導体
レーザにおいて、前記サブマウントに良熱伝導、
かつ熱膨張係数が大なる第１の材料と、熱膨張係
数が小なる第２の材料とを組合せた複合材料が用
いられることを特徴とする半導体レーザ。 At least the laser diode, submount,
In a semiconductor laser consisting of a fixing member that also serves as a heat sink, the submount has good heat conduction,
A semiconductor laser characterized in that a composite material is used in which a first material having a large coefficient of thermal expansion and a second material having a small coefficient of thermal expansion are combined.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1091789U JPH02102756U (en) | 1989-01-31 | 1989-01-31 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1091789U JPH02102756U (en) | 1989-01-31 | 1989-01-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02102756U true JPH02102756U (en) | 1990-08-15 |
Family
ID=31219005
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1091789U Pending JPH02102756U (en) | 1989-01-31 | 1989-01-31 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02102756U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012527754A (en) * | 2009-05-22 | 2012-11-08 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | Heat sink for pulsed high power laser diodes |
-
1989
- 1989-01-31 JP JP1091789U patent/JPH02102756U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012527754A (en) * | 2009-05-22 | 2012-11-08 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | Heat sink for pulsed high power laser diodes |