JPS5834925A - Liquid phase epitaxial growth device - Google Patents
Liquid phase epitaxial growth deviceInfo
- Publication number
- JPS5834925A JPS5834925A JP13367081A JP13367081A JPS5834925A JP S5834925 A JPS5834925 A JP S5834925A JP 13367081 A JP13367081 A JP 13367081A JP 13367081 A JP13367081 A JP 13367081A JP S5834925 A JPS5834925 A JP S5834925A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- liquid phase
- liquid
- vessel
- quartz
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/024—Group 12/16 materials
- H01L21/02411—Tellurides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02562—Tellurides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02625—Liquid deposition using melted materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は液相エピタキＶヤμ成長装置、特に化合物半導
体のテ／Ｌ／／Ｉ／化カド識つム水銀（Ｈｇ １−ｘｃ
ｄｘＴｅ）の液相エビタキＶヤ〃成長装置の改良に関
するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a liquid phase epitaxy VYμ growth apparatus, particularly for compound semiconductor T/L//I/Cd crystal mercury (Hg 1-xc).
This invention relates to an improvement of a liquid phase Evitaki Vya growth apparatus for dxTe).
化合物半導体のＨＪＥｌ−ｘｃｄｘＴｅは、そのエネル
ギーギャップが狭く、赤外線検知素子の材料とじて用い
られている。HJEl-xcdxTe, a compound semiconductor, has a narrow energy gap and is used as a material for infrared sensing elements.
このようなＨｇ１−ｘＣｄｚＴｅの結晶の製造方法とし
ては、従来カーボンよりなる支持台に例えばテルル化カ
ドミウム（ＣｄＴｅ ）よりなる基板を埋設し、該支持
台上をスライドして移動するスフイド部材に液だめを設
け、該液だめ中にテルル（Ｔｅ ）を溶媒、カドミウム
水銀（ＨｇＣｄ）を溶質とした液相を充填し、該スライ
ド部材をスライドさせて基板上に上記液相を接触させる
ことでＣｄＴｅの基板上にＨｇ１−ｚｃｄｚＴｅの結晶
層を形成するいわゆるスライディング法が用いられてい
た。Conventionally, a method for manufacturing such Hg1-xCdzTe crystals involves embedding a substrate made of, for example, cadmium telluride (CdTe) in a support made of carbon, and placing a liquid reservoir in a sphoid member that slides on the support. A liquid phase containing tellurium (Te) as a solvent and cadmium mercury (HgCd) as a solute is filled in the liquid reservoir, and the liquid phase is brought into contact with the substrate by sliding the slide member. A so-called sliding method was used to form a crystal layer of Hg1-zcdzTe on a substrate.
しかし前記Ｔｅよりなる溶媒はスライド部材および支持
台よりなる液相エピタキシャル成長装置を形成するカー
ボン材に対してなじみやすく容易に分離され難いため、
たとえば基板上にＨｇ ｓ −ｘＣｄｚＴｅの結晶層を
形成してから、スライド部材を移動させて基板上に残留
している液相を除去しようとしても該液相がスフイド部
材あるいは支持台に付着しやすいのでスライドする際に
支持台、スライド部材に付着している液相が基板に再び
付着し、基板上から液相をぬぐい去ることは困難であっ
た。However, since the solvent made of Te is compatible with the carbon material forming the liquid phase epitaxial growth apparatus made of the slide member and the support base, it is difficult to separate it easily.
For example, even if a crystal layer of Hg s -xCdzTe is formed on a substrate and the sliding member is moved to remove the liquid phase remaining on the substrate, the liquid phase tends to adhere to the sphide member or the support base. Therefore, when sliding, the liquid phase adhering to the support stand and the slide member adheres to the substrate again, making it difficult to wipe off the liquid phase from the substrate.
そこで水銀（Ｈｇ）を溶媒として、該ＨｇにＣｄＴｅを
溶質として溶解させてＱ １−ｘＣｄｘＴｅの液相を形
成してから、０ｄＴｅの基板上にＨｇ１−ｘＣｄｘＴｅ
の結晶層を液相エビタキＶヤル成長方法によシ形成する
方法がとられている。Therefore, we used mercury (Hg) as a solvent and dissolved CdTe in the Hg as a solute to form a liquid phase of Q1-xCdxTe.
A method has been adopted in which a crystalline layer is formed by a liquid phase epitaxial growth method.
ところで前述したＨｇ １−ｃｃｄｘＴ６１のＨｇは易
蒸発性であり、このような易蒸発性の１（ｇを含む■１
−ｘＯ（１ｘＴｅの材料の液相を用いて基板上にエピタ
キシャル成長させる場合には、従来第１図のような装置
を用いていた。By the way, Hg in Hg 1-ccdxT61 mentioned above is easily evaporable, and such easily evaporable 1 (including 1
In the case of epitaxially growing a -xO(1xTe material on a substrate using a liquid phase), an apparatus as shown in FIG. 1 has conventionally been used.
第１図は従来の液相エビタキシャ／Ｌ／成憂装置の概略
図で、例えばカーボンまたは石英よりなる密閉容器１中
にＨｇ１−ｘ’：”１ｘＴｅの液相２を充填し、Ｃｌ１
Ｔｅの基板８を設置した基板支持棒４を下方に移動させ
て該基板を液相中に浸漬させたのち前記密閉容器１を加
熱する加熱炉（図示せず）の温度を下降させて液相の温
度を冷却させてＣｄＴｅ基板上にＨｇｔ−１ＯＬｌｚＴ
ｅの結晶を析出させてから基板支持棒を上方に移動させ
て基板上にＨｇ１−ｘｏｄｘＴｅの結晶層を形成させる
いわゆるディッピング法を用いた装置である。FIG. 1 is a schematic diagram of a conventional liquid-phase Ebitaxia/L/Seiyu device, in which a closed container 1 made of carbon or quartz is filled with a liquid phase 2 of Hg1-x':"1xTe, and Cl1
After moving the substrate support rod 4 on which the Te substrate 8 is placed downward and immersing the substrate in the liquid phase, the temperature of a heating furnace (not shown) that heats the sealed container 1 is lowered and the temperature is reduced to the liquid phase. Hgt-1OLlzT was deposited on the CdTe substrate by cooling the temperature of
This apparatus uses a so-called dipping method in which a crystal layer of Hg1-xodxTe is formed on the substrate by depositing crystals of e and then moving the substrate support rod upward.
しかし上記した装置では前記Ｈｇが易蒸発性で蒸気圧が
高いため、前記ｆ（ｇの蒸気圧に耐えるように装置を設
計しなければならず、装置が高価なものとなる欠点があ
る。However, in the above-mentioned apparatus, since the Hg is easily evaporated and has a high vapor pressure, the apparatus must be designed to withstand the vapor pressure of f(g), which has the drawback of making the apparatus expensive.
また前記した力〜ボンよりなる支持台とスライド部材よ
りなる液相エビタキシャ／Ｌ’成長装置を用いて、液だ
めにＨｇを溶媒とし、ＣｄＴｅを溶質として形成した液
相を充填し、該液相をＣｄＴｅの基板に接触させて該エ
ビタキシャμ成長装置を加熱する加熱炉の温度を低下さ
せて基板にＨｇ１−ｘｃｄｘ’ｒｅの結晶層を形成する
いわゆるスライディング法によってＨｇＩ−ｚｃｄｚＴ
ｅの結晶層を形成することも試みた。しかしこの方法で
あるとエビタキンヤｐ成長装置を挿入する水素ガス雰囲
気の又応管が開管状頗になってお９易蒸発性のＨｇが蒸
発して反応管より外部に逃散し均一な組成のＨｇ１−ｘ
ＣｄｘＴｅの結晶層が形成されない不都合を生じる。In addition, using the liquid phase epitaxia/L' growth apparatus consisting of a support stand made of a force bomb and a slide member, a liquid reservoir is filled with a liquid phase formed by using Hg as a solvent and CdTe as a solute, and the liquid phase is HgI-zcdzT is grown by a so-called sliding method in which a crystal layer of Hg1-xcdx're is formed on the substrate by lowering the temperature of a heating furnace that heats the epitaxia μ growth apparatus by contacting with a CdTe substrate.
We also attempted to form a crystal layer of e. However, with this method, the reaction tube with hydrogen gas atmosphere into which the Evita Kinya p growth apparatus is inserted becomes an open tube, and Hg, which is easily evaporated, evaporates and escapes from the reaction tube to the outside, resulting in a uniform composition of Hg1. -x
This results in the inconvenience that a CdxTe crystal layer is not formed.
本発明は上述した欠点を除去し、簡単な構造でしかも易
蒸発性のＩ（ｇが蒸発しないような構造の液相エピタキ
シャル成長装置の提供を目的とするものである。The object of the present invention is to eliminate the above-mentioned drawbacks and to provide a liquid phase epitaxial growth apparatus having a simple structure and a structure in which easily evaporable I(g) does not evaporate.
かかる目的を達成するための液相エピタキシャル成長装
置は、基板を埋設する基板支持台と、該基板上に成長さ
せるべき結晶の液相を収容せる液だめを保持する部材と
を対向配置して密閉容器内に封入した構成を有し、前記
基板支持台には基板を設置するとともに１前記液だめに
は基板上に成長させるべき結晶の材料を充填した状態で
、前記基板支持台と液だめを保持する部材との上下関係
を反転できるよう加熱炉中に回転可能に設置したことを
特徴とするものである。A liquid phase epitaxial growth apparatus for achieving this purpose consists of a closed container in which a substrate support table in which a substrate is buried and a member holding a liquid reservoir in which a liquid phase of a crystal to be grown on the substrate is placed facing each other. A substrate is placed on the substrate support, and the liquid reservoir is filled with a crystal material to be grown on the substrate, and the substrate support and the liquid reservoir are held. It is characterized in that it is rotatably installed in the heating furnace so that the vertical relationship with the members to be heated can be reversed.
以下図面を用いて本発明の一実施例につき詳細に説明す
る。An embodiment of the present invention will be described in detail below with reference to the drawings.
第２図は本発明の液相エビタキシャ／ｌ／成長装置の一
実施例の断面図で図示するようにＣ（ＩＴｅ基板１１を
埋設するカーボン製の基板支持台【２と該基板支持台１
２に対向して該基板上に形成すべき１（ｇを溶媒としＣ
ｄＴｅを溶質としてＨｇ１−２ｃｄｘＴｅの材料の液相
１８を収容する液だめ１４を保持するカーボン製の部材
１６が石英製の容器１６中に収容されている。該容器内
部は真空に排気されて一端が封止されている。そして基
板１１と液だめ１４とは対向配置されているものとする
。FIG. 2 is a cross-sectional view of an embodiment of the liquid phase epitaxia/l/growth apparatus of the present invention, as shown in FIG.
1 to be formed on the substrate opposite to 2 (G is the solvent and C
A carbon member 16 holding a liquid reservoir 14 containing a liquid phase 18 of Hg1-2cdxTe with dTe as a solute is housed in a quartz container 16. The inside of the container is evacuated and one end is sealed. It is assumed that the substrate 11 and the liquid reservoir 14 are placed opposite each other.
このような基板支持台１２にｃｄ’ｒｅの基板１１を、
また液だめにはＨｇを溶媒としＣｄＴｅを溶質とした’
Ｈｇ １−ＸＣＣＩＸＴｅの材料を充填した状態で前記
基板支持台１２と液だめを保持する部材１５とを石英容
器内部に挿入し該石英容器の内部を排気して端部Ａを封
止する。その後封止した石英容器１６を反応管１７中に
挿入し、該反応管１７を加熱炉１８にて加熱する。The CD'RE board 11 is placed on such a board support stand 12.
In addition, in the liquid reservoir, Hg was used as a solvent and CdTe was used as a solute.
Filled with Hg 1-XCCIXTe material, the substrate support 12 and the member 15 holding the liquid reservoir are inserted into the quartz container, the inside of the quartz container is evacuated, and the end A is sealed. Thereafter, the sealed quartz container 16 is inserted into the reaction tube 17, and the reaction tube 17 is heated in the heating furnace 18.
このようにして液だめ１４中のＨｇ１−ｘＣｄｘＴｅの
材料が溶融した状態で該一端を封止した石英容器１６を
回転させて基板１１上にＨｇ ５−ｘＣｄｘＴｅ１の液
相を接触させてから加熱炉の温度を冷却させて過飽和状
頗となった１ｋ １−ｘＣｄｘＴ”の液相の組成を結晶
層として基板上に成長させる。この回転時に基板支持台
と液だめ保持部材が離れないようにピン等を用いて支持
台と部材を固定する。その後所定時間経過して基板上に
所定の厚さ結晶層が成長した段階で再び一端を封止した
石英容−を回転させて基板上に載っているＨｇｔ−ｚＣ
ｄｚＴｅの液相を取り除く。このように一端を封止した
石英容器を回転させるには、該石英容器に石英棒Ｂ等を
溶着等によシ取りつけて反応管１７の外部の方向に引き
出しておけばよい、ｔたこの回転時に基板支持台と液だ
め保持部材が移動しないように石英容器１６の内部に石
英製の枠１９をもうけて該枠に液だめ保持部材を固定す
る。With the Hg1-xCdxTe material in the liquid reservoir 14 in this molten state, the quartz container 16 with one end sealed is rotated to bring the liquid phase of Hg5-xCdxTe1 into contact with the substrate 11, and then the heating furnace is heated. The liquid phase composition of 1k 1-xCdxT", which has become supersaturated, is grown on the substrate as a crystal layer. During this rotation, pins etc. are used to prevent the substrate support and the liquid reservoir holding member from coming apart. After that, after a predetermined period of time has passed and a crystal layer of a predetermined thickness has grown on the substrate, the quartz container with one end sealed is rotated again and placed on the substrate. Hgt-zC
Remove the dzTe liquid phase. In order to rotate a quartz container with one end sealed in this way, it is sufficient to attach a quartz rod B or the like to the quartz container by welding or the like and pull it out toward the outside of the reaction tube 17. A frame 19 made of quartz is provided inside the quartz container 16, and the liquid reservoir holding member is fixed to the frame so that the substrate support stand and the liquid reservoir holding member do not move at any time.
以上述べたように本発明の液相エピタキシャル成長装置
を用いれば簡単な装置で易蒸発性のＨｇを含むＨｇ１−
ｚｃｄｚＴｌｉｌの結晶層が容易に成長でき、赤外線検
知素子用の結晶が容易に得られる利点を生じる。また以
上の実施例の池に基板支持台および液ｉの保持部材は石
英を用いて形成してもよい・As described above, if the liquid phase epitaxial growth apparatus of the present invention is used, Hg1- containing easily evaporable Hg can be grown with a simple apparatus.
A crystal layer of zcdzTlil can be easily grown, giving rise to the advantage that crystals for infrared sensing elements can be easily obtained. Furthermore, the substrate support stand and the liquid i holding member in the pond of the above embodiment may be formed using quartz.
第１図は従来の液相エビタキシャ〃成長装置の概略図で
、第２図は本発明の液相エビタキシャμ成長装置の一実
施例を示す断面図である。
図において、ｌは密閉容器、２はＨｇ １−ＸＣｄＸＴ
ｅの液相、８はＣ！（ｉＴｅの基板、４は支持棒、１１
は基板、１２は基板支持台、１８はＨｇｌ ４Ｃ（１ｘ
Ｔｅの液相、１４は液だめ、１５は部材、１６は容器、
１７は反応管：１８は加熱炉、１９は石英枠、Ａは端部
、Ｂは石英棒を示す。FIG. 1 is a schematic diagram of a conventional liquid phase epitaxia growth apparatus, and FIG. 2 is a sectional view showing an embodiment of the liquid phase epitaxia μ growth apparatus of the present invention. In the figure, l is a closed container, 2 is Hg 1-XCdXT
Liquid phase of e, 8 is C! (iTe substrate, 4 is a support rod, 11
is the substrate, 12 is the substrate support, 18 is Hgl 4C (1x
A liquid phase of Te, 14 a liquid reservoir, 15 a member, 16 a container,
17 is a reaction tube, 18 is a heating furnace, 19 is a quartz frame, A is an end, and B is a quartz rod.
Claims (1)
き結晶の液相を収容せる液だめを保持する部材とを対向
配置して密閉容器内に封入した構成を有し、前記基板支
持台には基板を設置するとともに前記液だめには基板上
に成長させるべき結晶の材料を充填した状鮨で前記基板
支持台と液だめを保持する部材との上下関係を反転でき
るよう加熱炉中に回転可能に設置したことを特徴とする
液相エピタキシャル成長装置。The substrate support has a structure in which a substrate support in which a substrate is buried and a member holding a liquid reservoir that accommodates a liquid phase of a crystal to be grown on the substrate are arranged facing each other and enclosed in a closed container, and the substrate support is A substrate is placed on the substrate, and the liquid reservoir is filled with a crystal material to be grown on the substrate. A liquid phase epitaxial growth apparatus characterized by being rotatably installed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13367081A JPS5834925A (en) | 1981-08-25 | 1981-08-25 | Liquid phase epitaxial growth device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13367081A JPS5834925A (en) | 1981-08-25 | 1981-08-25 | Liquid phase epitaxial growth device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5834925A true JPS5834925A (en) | 1983-03-01 |
| JPH0338736B2 JPH0338736B2 (en) | 1991-06-11 |
Family
ID=15110157
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13367081A Granted JPS5834925A (en) | 1981-08-25 | 1981-08-25 | Liquid phase epitaxial growth device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5834925A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57194516A (en) * | 1981-05-26 | 1982-11-30 | Toyo Aluminium Kk | Aluminum foil for electrolytic condenser |
| US6855408B2 (en) | 2002-01-25 | 2005-02-15 | Showa Denko K.K. | Composite metal material and method for manufacturing the same, etched metal material and method for manufacturing the same and electrolytic capacitor |
| US11172720B2 (en) | 2016-06-14 | 2021-11-16 | Darryl Rodney FLACK | Helmet with chin crush zone and integrated ventilation |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52144271A (en) * | 1976-05-27 | 1977-12-01 | Toshiba Corp | Preparation of semiconductor device |
-
1981
- 1981-08-25 JP JP13367081A patent/JPS5834925A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52144271A (en) * | 1976-05-27 | 1977-12-01 | Toshiba Corp | Preparation of semiconductor device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57194516A (en) * | 1981-05-26 | 1982-11-30 | Toyo Aluminium Kk | Aluminum foil for electrolytic condenser |
| JPS6242370B2 (en) * | 1981-05-26 | 1987-09-08 | Toyo Aluminium Kk | |
| US6855408B2 (en) | 2002-01-25 | 2005-02-15 | Showa Denko K.K. | Composite metal material and method for manufacturing the same, etched metal material and method for manufacturing the same and electrolytic capacitor |
| US11172720B2 (en) | 2016-06-14 | 2021-11-16 | Darryl Rodney FLACK | Helmet with chin crush zone and integrated ventilation |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0338736B2 (en) | 1991-06-11 |
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