JPS5976432A - Liquid phase epitaxial growth apparatus - Google Patents
Liquid phase epitaxial growth apparatusInfo
- Publication number
- JPS5976432A JPS5976432A JP18774582A JP18774582A JPS5976432A JP S5976432 A JPS5976432 A JP S5976432A JP 18774582 A JP18774582 A JP 18774582A JP 18774582 A JP18774582 A JP 18774582A JP S5976432 A JPS5976432 A JP S5976432A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- vessel
- tube
- quartz
- epitaxial growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02625—Liquid deposition using melted materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/024—Group 12/16 materials
- H01L21/02411—Tellurides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02562—Tellurides
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【発明の詳細な説明】
（ａ） 発明の技術分野
本発明は浸漬法を用いた液相エピタキシャル成長方法の
改良に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to an improvement in a liquid phase epitaxial growth method using an immersion method.
（ｂ） 技術の背景
赤外線検知素子の形成材料としては、一般にエネルギー
ギャップの狭い水銀、カドミウム、チル１しく Ｈｆ１
−ｘ Ｃｄｘ Ｔｅ ）のような化合物半導体結晶が用
いられる。(b) Background of the technology The forming materials for infrared sensing elements generally include mercury, cadmium, and Hf1, which have a narrow energy gap.
A compound semiconductor crystal such as -xCdxTe) is used.
このような結晶を素子形成に都合が良い様に薄層の単結
晶状態で大面積に形成するため、比較的安価で入手しや
すい単結晶のテｌレル化カドミウム（ｃｄＴｅ）の基板
を用い、その上にｆｂ＋−ｘ Ｃｄｙ Ｔｅ結晶を液相
エピタキシャル成長する方法がとられている。In order to form such a crystal in a thin single-crystal state over a large area, which is convenient for device formation, a relatively inexpensive and easily available single-crystal cadmium telleride (cdTe) substrate is used. A method has been adopted in which an fb+-x Cdy Te crystal is grown on it by liquid phase epitaxial growth.
ところでＨＰｌ−、ＣｄｘＴｅの結晶は易蒸発性の水銀
（Ｈ２）を含んでおり、このＨ？がエピタキシャル成長
中に蒸発しないように密閉型構造で浸漬法を用いた液相
エピタキシャル成長方法全以前に提案した。By the way, the crystals of HPl- and CdxTe contain easily evaporable mercury (H2), and this H? A liquid-phase epitaxial growth method using a dipping method in a closed structure to avoid evaporation during epitaxial growth was previously proposed.
（Ｃ） 従来技術と問題点
このような浸漬法を用いた従来の密閉型構造の液相エピ
タキシャル成長装置について第１図より第３図までを用
いて説明する。(C) Prior Art and Problems A conventional liquid phase epitaxial growth apparatus with a closed structure using such an immersion method will be explained with reference to FIGS. 1 to 3.
第１図は従来の液相エピタキシャル成長装置の斜視図、
第２図は第１図Ａ−Ａ’線に沿った断面図、第３図は第
１図のＢ−Ｂ’線に沿った断面図である。Figure 1 is a perspective view of a conventional liquid phase epitaxial growth apparatus.
2 is a sectional view taken along line AA' in FIG. 1, and FIG. 3 is a sectional view taken along line BB' in FIG. 1.
第１図、第２図、第３図に図示するように従来の液相エ
ピタキシャル成長装置は、石英等の耐熱性の封管１内に
Ｃｄ Ｔｅの基板２を挾んで保持するような凹所３を設
けた１対の前記封管】の内壁面に内接するような石英部
材４より構成されている。As shown in FIGS. 1, 2, and 3, a conventional liquid phase epitaxial growth apparatus has a recess 3 in which a Cd Te substrate 2 is held between a heat-resistant sealed tube 1 made of quartz or the like. It is constructed of a quartz member 4 that is inscribed in the inner wall surface of a pair of sealed tubes provided with the above-mentioned sealed tubes.
更に、封管１内において１対の支持部材ｉの間には基板
２上に形成すべきＨｒ、−ｘＣｄｘＴｅの材料５が充填
されている。Further, in the sealed tube 1, a space between the pair of support members i is filled with a material 5 of Hr, -xCdxTe, which is to be formed on the substrate 2.
このようにした封管ｌを加熱炉内の反応管中に導入し、
該反応管を加熱して充填されているＨｆ１−ｘＣｄＸＴ
ｅの材料を溶融後、封管ｌを矢印Ｃ方向Ｋ１８０°回転
する。すると基板が溶融したＨＦＩ−ｘＣｄｘＴｅの溶
液中に浸漬されることになり、この状態で加熱炉の温度
を低下させ、溶液の温度を下降させることで、基板上に
Ｈｙ、ｘ Ｃｄｘ Ｔｅの結晶層が析出するようＫなる
。Introducing the thus sealed tube l into a reaction tube in a heating furnace,
The reaction tube is heated and filled with Hf1-xCdXT.
After melting the material e, the sealed tube l is rotated by 180° in the direction of arrow C. Then, the substrate is immersed in the molten HFI-xCdxTe solution, and in this state, the temperature of the heating furnace is lowered, and by lowering the temperature of the solution, a crystal layer of Hy,xCdxTe is formed on the substrate. K becomes precipitated.
しかし、このような従来の構造の液相エピタキシャル成
長装置では、支持部材４と外部の封管１とを密接した状
態で封止せねばならず、基板２を支持部材４に設置する
際ピンセットで基板に傷をつけたり、菫た基板がピンセ
ット等で汚染されたり、基板が割れたりして基板の装着
に時間がかかりすぎる欠点があった。However, in a liquid phase epitaxial growth apparatus having such a conventional structure, it is necessary to seal the support member 4 and the external sealed tube 1 in close contact, and when installing the substrate 2 on the support member 4, it is necessary to close the substrate 2 with tweezers. There are disadvantages in that it takes too much time to attach the board because the board may be scratched or scratched, and the board may become contaminated with tweezers or the like, or the board may crack.
また、このような従来の構造では用いる基板の大きさが
、支持部材の凹所の大きさによって限定される欠点があ
る。Furthermore, such a conventional structure has the disadvantage that the size of the substrate used is limited by the size of the recess in the support member.
（ｄ） 発明の目的
本発明は上述した欠点を除去し、基板を保持する治具と
封管とは従来のような密接型の構造とすることをせずに
、基板が容易に支持部材に設置で糠、また基板の大きさ
が変動しても容易に支持部材に設置でき得るような新規
な浸漬型の密閉式構 ・造の液相エピタキシャル成
長装置の提供を目的とするものである。(d) Object of the Invention The present invention eliminates the above-mentioned drawbacks, and allows the substrate to be easily attached to the supporting member without having to make the jig and the sealed tube that hold the substrate into a close-contact structure as in the past. The object of the present invention is to provide a liquid phase epitaxial growth apparatus having a novel immersion type closed type structure that can be easily installed on a support member even if the size of the substrate changes.
（ｅ） 発明の構成
かかる目的を達成するための本発明の液相エピタキシャ
ル成長装置は、外管と、該外管に内接しかつ基板と該基
板上にエビタキシャＩし成長すべき結晶層形成材料を収
容する容器と、該容器を外管に保持する保持具とからな
り、前記容器には基板を保持する手段と開閉蓋とを備え
ていることを特徴とするものである。(e) Structure of the Invention In order to achieve the above object, the liquid phase epitaxial growth apparatus of the present invention comprises an outer tube, a substrate inscribed in the outer tube, and a crystal layer forming material to be grown by epitaxy on the substrate. It consists of a container to accommodate the substrate and a holder for holding the container in an outer tube, and the container is characterized in that it is equipped with means for holding the substrate and an opening/closing lid.
（ｆ） 発明の実施例
以下図面を用いながら、本発明の一実施例につき詳細に
説明する。(f) Embodiment of the Invention An embodiment of the invention will be described in detail below with reference to the drawings.
第４図は本発明の液相エピタキシャル成長装置の斜視図
、第５図は第４図のＥ−ビ線に沿った横断面図、第６図
は本発明の液相エピタキシャル成長装置に用いる容器の
縦断面図である。FIG. 4 is a perspective view of the liquid phase epitaxial growth apparatus of the present invention, FIG. 5 is a cross-sectional view taken along line E-B in FIG. 4, and FIG. 6 is a vertical cross-section of a container used in the liquid phase epitaxial growth apparatus of the present invention. It is a front view.
第４図に示すように本発明の液相エピタキシャル成長装
置は石英よりなる直方体形状の容器１１と該容器が内接
するような石英製の封管１２と該封管１２に容器１１を
保持するような石英よりなる保持棒１３とより・なって
いる。As shown in FIG. 4, the liquid phase epitaxial growth apparatus of the present invention includes a rectangular parallelepiped-shaped container 11 made of quartz, a sealed tube 12 made of quartz in which the container is inscribed, and a container 11 held in the sealed tube 12. It is twisted with a holding rod 13 made of quartz.
このような石英製の容器１１の上部にはＣｄＴｅの基板
１４を保持するような石英製の突起１５が設けられてお
り、その容器１１の側面は開閉蓋１６となっており、該
開閉蓋１６は容器に設けた溝に沿って紙面に垂直方向に
スライドして移動するようになっている。A quartz projection 15 for holding a CdTe substrate 14 is provided on the top of the quartz container 11, and a side surface of the container 11 is an opening/closing lid 16. is designed to slide along a groove provided in the container in a direction perpendicular to the plane of the paper.
このような容器１１の上部にＣｄＴｅの基板１４を設置
し、容器の内部には基板上に形成すべきＨｐ、−８ｃｄ
ｘＴｅの結晶層形成材料１７を収容し、容器の側面を形
成する開閉蓋１６をスライドさせて閉じたのち一端が開
孔した有底の石英管中に挿入したのち該容器１１を支持
棒１３にて支えながら石英管の内部を排気しながら開口
部を溶接して封止して＄１図の封管臣の状態にする。A CdTe substrate 14 is installed on the top of such a container 11, and inside the container there is Hp, -8cd, to be formed on the substrate.
After accommodating the xTe crystal layer forming material 17 and sliding the opening/closing lid 16 forming the side surface of the container and inserting it into a bottomed quartz tube with a hole at one end, the container 11 is attached to the support rod 13. While supporting the quartz tube and evacuating the inside of the quartz tube, weld and seal the opening to create the sealed state shown in Figure 1.
その後封管を加熱炉内に挿入し、加熱炉の温度を上昇さ
せて結晶層形成材料を溶融させたのち、封管１２を１８
０°矢印り方向に回転せしめてＨＰ、−、［ＣｄｘＴｅ
の結晶層形成用溶液に基板を接触させたのち、加熱炉の
温度を低下せしめて基板上に”＋−ｘ Ｃｄ Ｘ Ｔｅ
の結晶層を形成する。その後所定の時間終了した時点で
更に封管を１８０°矢印り方向に回転せしめ、基板と溶
液とを分離する。この場合スライドした開閉蓋と容器と
の間隙が多少あったとしてもＨＲ−：（ＣｄＸＴｅの溶
液の表面張力は大きく外部にこぼれ出すようなことはな
い。また封管１２を回転しても支持俸招によって容器１
１と封管１２とは固着されたような状態になっているの
で、封管１２の回転とともに容器１１も同時に回転する
ようになる。Thereafter, the sealed tube 12 is inserted into a heating furnace, and the temperature of the heating furnace is increased to melt the crystal layer forming material.
Rotate 0° in the direction of the arrow to select HP, -, [CdxTe
After bringing the substrate into contact with the solution for forming a crystal layer, the temperature of the heating furnace is lowered to form "+-x Cd X Te" on the substrate.
forms a crystalline layer. Thereafter, at the end of a predetermined period of time, the sealed tube is further rotated 180° in the direction of the arrow to separate the substrate and the solution. In this case, even if there is some gap between the slid opening/closing lid and the container, the surface tension of the HR-:(CdXTe solution is large enough to prevent it from spilling outside.Also, even if the sealed tube 12 is rotated, the support volume will not be increased. Container 1 by invitation
1 and the sealed tube 12 are in a fixed state, so as the sealed tube 12 rotates, the container 11 also rotates at the same time.
また本発明の液相エピタキシャル成長装置において、封
管の内部に収容する容器としては該封管に内接するよう
な円筒状の形状となし、該円筒状の容器の一端部をすり
合せ構造として容器の内部へ基板や、基机上に形成すべ
き結晶層形成用材料を出し入れでき得る構造としても良
い。Further, in the liquid phase epitaxial growth apparatus of the present invention, the container accommodated inside the sealed tube has a cylindrical shape so as to be inscribed in the sealed tube, and one end of the cylindrical container is made of a bonded structure. It may also have a structure in which a substrate or a material for forming a crystal layer to be formed on the base can be taken in and out.
（ｇ） 発明の効果
以上述べたように、本発明の液相エピタキシャル成長装
置によれば、基板を装置に装着する際基板がピンセラ）
Ｋよって傷？つけられたり破損したりする事故が避けら
れ、エピタキシャルｒ＆ ＆ ノ作業が容易となり、工
程に要する時間も短縮でき得る利点を生じる。(g) Effects of the Invention As described above, according to the liquid phase epitaxial growth apparatus of the present invention, when the substrate is mounted on the apparatus, the substrate is in a pincer state.
Is K a wound? Accidents such as damage or breakage can be avoided, the epitaxial R&& process can be facilitated, and the time required for the process can be shortened.
第１図は従来の液相エピタキシャル成長装置を示す断面
図、第２図は第１図のＡ−Ａ’線に沿った断面図、第３
図は第１図のＢ−Ｂ’線に沿った断面図、第４図は本発
明の液相エピタキシャル成長装置の一実施例を示す斜視
図、第５図は韮４図のＥ−Ｅ／線に沿った横断面図、第
６図は本発明の装置に用いる容器の縦断面図である。
図において、■、１２は封管、２，１４はＣｄＴｅ基板
、３は凹所、４は支持部材、５，１７はＨｔ、−８Ｃｄ
。
Ｔｅの材料、１１は容器、１３は保持棒、１５は突起、
１６は開閉蓋、Ｃ，Ｄは封管の回転方向を示す矢印であ
る。
第１図
第３閏
第４図
第５図FIG. 1 is a cross-sectional view showing a conventional liquid phase epitaxial growth apparatus, FIG. 2 is a cross-sectional view taken along line A-A' in FIG. 1, and FIG.
The figure is a sectional view taken along the line BB' in Figure 1, Figure 4 is a perspective view showing an embodiment of the liquid phase epitaxial growth apparatus of the present invention, and Figure 5 is a line taken along the line E-E/ in Figure 4. FIG. 6 is a longitudinal cross-sectional view of a container used in the apparatus of the present invention. In the figure, ■, 12 is a sealed tube, 2 and 14 are CdTe substrates, 3 is a recess, 4 is a support member, 5 and 17 are Ht, -8Cd
. Te material, 11 is a container, 13 is a holding rod, 15 is a protrusion,
16 is an opening/closing lid, and C and D are arrows indicating the direction of rotation of the sealed tube. Figure 1 Figure 3 Leap Figure 4 Figure 5
Claims (1)
シャｌし成長すべき結晶層形成材料を収容する容器と、
該容器を外管に保持する保持具とからなり、前記容器に
は基板を保持する手段と開閉蓋とを備えていることを特
徴とする液相エピタ午シャル成長装置。an outer tube, a container inscribed in the outer tube and containing a substrate and a crystal layer forming material to be epitaxially grown on the substrate;
A liquid phase epitaxial growth apparatus comprising a holder for holding the container in an outer tube, the container being provided with means for holding a substrate and an opening/closing lid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18774582A JPS5976432A (en) | 1982-10-25 | 1982-10-25 | Liquid phase epitaxial growth apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18774582A JPS5976432A (en) | 1982-10-25 | 1982-10-25 | Liquid phase epitaxial growth apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5976432A true JPS5976432A (en) | 1984-05-01 |
Family
ID=16211450
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18774582A Pending JPS5976432A (en) | 1982-10-25 | 1982-10-25 | Liquid phase epitaxial growth apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5976432A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0512090U (en) * | 1991-05-13 | 1993-02-19 | 三菱マテリアル株式会社 | Work transfer device |
-
1982
- 1982-10-25 JP JP18774582A patent/JPS5976432A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0512090U (en) * | 1991-05-13 | 1993-02-19 | 三菱マテリアル株式会社 | Work transfer device |
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