JPS58212142A - Liquid phase epitaxially growth method - Google Patents

Liquid phase epitaxially growth method

Info

Publication number
JPS58212142A
JPS58212142A JP57095771A JP9577182A JPS58212142A JP S58212142 A JPS58212142 A JP S58212142A JP 57095771 A JP57095771 A JP 57095771A JP 9577182 A JP9577182 A JP 9577182A JP S58212142 A JPS58212142 A JP S58212142A
Authority
JP
Japan
Prior art keywords
substrate
slide member
liquid phase
reservoir
crystal layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57095771A
Other languages
Japanese (ja)
Inventor
Michiharu Ito
伊藤　道春
Mitsuo Yoshikawa
吉河　満男
Tomoshi Ueda
知史 上田
Kenji Maruyama
研二 丸山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57095771A priority Critical patent/JPS58212142A/en
Publication of JPS58212142A publication Critical patent/JPS58212142A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02562—Tellurides

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To obtain a crystalline layer in the state that the layer of Hg1-XCdXTe does not produce crystalline grains and that the layer is not varied in composition by forming the layer on a substrate by lowering the temperature of a heating furnace which heats a supporting base and a slide member. CONSTITUTION:A supporting base 11, the first slide member 15 and the second slide member 18 are inserted into a reaction tube in H2 gas atmosphere, and heated to the temperature of approx. 500 deg.C in a heating furnace. Then, an alloy of Hg, Cd, Te is molten in a liquid reservoir 19, thereby forming the liquid phase 20 having a composition of Hg1-XCdXTe to be formed on a substrate. Then, only the second slide member 18 is moved in a direction of an arrow B, the reservoir 19 is steadily placed on a liquid reservoir 16 of the first member 15, and liquid phase 20 is dropped in the liquid reservoir 16. Thereafter, the first slide member 15 is moved in a direction of an arrow C, the reservoir 16 is steadily placed on a substrate 13, the liquid phase 20 of Hg1-XCdXTe is contacted on the substrate 13, the temperature of the furnace is lowered, thereby forming a crystal layer of Hg1-XCdXTe on the substrate 13.

Description

【発明の詳細な説明】 れ）発明の技術分野 本発明はスライディング法を用いた化合物半導体の液相
エピタキシャル成長方法の改良に関するものである。DETAILED DESCRIPTION OF THE INVENTION Technical Field of the Invention The present invention relates to an improvement in a method for liquid phase epitaxial growth of compound semiconductors using a sliding method.

（ｂ）　　技術の背景 赤外線検知素子の形成材料としては、一般に水銀、カド
ミウム・テＡ／　ｌｖ、　（Ｈｇ　ｌ　−２ｃｄｚＴｅ
　）のようなエネルギーギャップの狭い化合物半導体結
晶が用いられている。このよう々結晶を素子形成に都合
が良いように大面積でしかも薄層の状態で得るようにす
るには、比較的大面積の結晶が得やすいテ／Ｌ／　）ｖ
化カドミウム（ＣｄＴｅ）の結晶基板上にＨｇ　１−ｘ
ＣｄｘＴｅ　　の結晶層をスライディング法を用いた液
相エピタキシャル成長方法で形成している。(b) Background of the technology In general, mercury, cadmium TeA/lv, (Hgl-2cdzTe) are used as forming materials for infrared sensing elements.
) Compound semiconductor crystals with narrow energy gaps are used. In order to obtain a crystal with a large area and a thin layer that is convenient for device formation, it is easy to obtain a crystal with a relatively large area.
Hg 1-x on a cadmium oxide (CdTe) crystal substrate
The CdxTe crystal layer is formed by a liquid phase epitaxial growth method using a sliding method.

（Ｃ）　　従来技術と問題点 このような従来の液相エピタキシャル成長方法について
第１図を用いながら説明する。(C) Prior Art and Problems This conventional liquid phase epitaxial growth method will be explained with reference to FIG.

図示するように直方体形状のカーボンよりなる支持台ｌ
の凹所２にＣｄＴｅの基板３ｔ−埋設し、その上をスラ
イドして移動する直方体形状のカーボンよりなるスライ
ド部材４の方形の貫通孔よりなる液だめ５には基板上に
形成すべきＨｇ　１−ｘｃ（ｌｘＴｅの結晶層の材料の
水銀（Ｈｇ）、カドミウム（Ｃｄ）、テ／Ｌ’Ａ／（Ｔ
ｅ）よりなる合金を充填し定のち水素（Ｈｇ）ガス雰囲
気の反応管中へ挿入し、該反応管を加熱炉にて約５０１
の温度になるまで加熱する。As shown in the figure, a support l made of rectangular parallelepiped carbon
A CdTe substrate 3t is buried in the recess 2 of the substrate 3t, and a liquid reservoir 5 formed of a rectangular through hole of a rectangular parallelepiped-shaped slide member 4 made of carbon that slides on the CdTe substrate 3t is filled with Hg 1 to be formed on the substrate. -xc(lxTe crystal layer materials mercury (Hg), cadmium (Cd), Te/L'A/(T
e) Filled with an alloy consisting of
Heat until the temperature reaches .

このようにして前述した）Ｌｇ、Ｃｄ、Ｔｅよりなる合
金をＴｅを溶媒としｔ形で溶融して液相とする。In this way, the alloy consisting of Lg, Cd, and Te (described above) is melted in the T-form using Te as a solvent to form a liquid phase.

その後スライド部材４を矢印Ａ方向にスライドさせて移
動し、液だめ５を基板３上に静置し定のち、加熱炉の温
度を所定の温度勾配で低下させ、基板３上に液相の成分
のＨｇ　１−ｚｃｃｌｚＴｅの結晶層を形成するように
している。次いで所定の時間、基板３上に液だめ５ｔ−
静置して、基板３上にＨｇ　１−ｘＣｄｚＴｅの結晶層
を形成してからスライド部材４を１ 更に矢印Ａ方向にスライドＩさせて移動し、基板上に残
留している不要なＨｇ１−ｘＣｄｘＴｅの液相をぬぐい
去るようにしている。After that, the slide member 4 is slid in the direction of arrow A, and the liquid reservoir 5 is left stationary on the substrate 3. After that, the temperature of the heating furnace is lowered by a predetermined temperature gradient, and the liquid phase components are placed on the substrate 3. A crystal layer of Hg 1-zcclzTe is formed. Next, a liquid reservoir 5t- is placed on the substrate 3 for a predetermined period of time.
Leave to stand still to form a crystal layer of Hg 1-xCdxTe on the substrate 3, and then slide the slide member 4 further in the direction of arrow A to remove unnecessary Hg1-xCdxTe remaining on the substrate. The liquid phase is wiped away.

ところで基板３上に液だめ５ｔ−静置し、Ｅ（ｇｌ−ｘ
Ｃ（ＩＸＴｅの結晶層を基板上に形成する間に基板３の
表面の端辺部上においてＨｇｔ−ｘＣｄｘＴｅの結晶粒
が形成される不都合がある。これは貫通孔の液だめに入
っている（　Ｈｇ　ｓ　−ｘＣｄｘ　）、５−ｙＴｙの
液相が液だめのカーボンの内壁に接触し、しかもカーボ
ンの内壁が低温部となるため結晶粒が形成されるためと
考える。この結晶粒の発生によって基板上に形成される
Ｈｇｌ　ｚｃｄｚＴｅの結晶層が凹凸を呈する傾向を生
じ、また基板３上に？１−ｘＣｄｘＴｅの結晶層を形成
後、更にスライド部材４を移動させて基板上に残留して
いる不要なＨｇ　１−ｘｃｄｘＴｅの液相を除去する際
、前記基板の端辺部に形成されているＨｇ　１−ｘＣｄ
ｘＴｅの結晶粒がスライド部材によって移動されそれに
よって形成され九Ｈｇ　１−ｘＣ（！−ｘＴｅのエピタ
キシャル層表面に傷が発生するといった不都合を生じる
。　　　　　　　　・・ｊ １１□１１ そこでＨｇ　１−２ＣｄｚＴｅの液相を収容する液だめ
５の内壁面にあらかじめＣｄＴｅの薄板を設置し、この
薄板によって基板表面の端辺部にＨｇ１−ｘＣｄｘＴｅ
の結晶粒が形成されるのを防止するような方法がとられ
ていた。By the way, the liquid reservoir 5t is placed on the substrate 3, and E(gl-x
During the formation of a crystal layer of C(IXTe on a substrate, there is an inconvenience that crystal grains of Hgt-xCdxTe are formed on the edges of the surface of the substrate 3. These grains are in the liquid reservoir of the through hole ( We believe that this is because the liquid phase of Hg s -xCdx ), 5-yTy contacts the inner wall of carbon in the liquid reservoir, and the inner wall of carbon becomes a low-temperature part, forming crystal grains. The crystal layer of Hgl zcdzTe formed thereon tends to exhibit unevenness, and after forming the crystal layer of ?1-xCdxTe on the substrate 3, the slide member 4 is further moved to remove unnecessary particles remaining on the substrate. When removing the liquid phase of Hg 1-xcdxTe, the Hg 1-xCd formed on the edge part of the substrate
The crystal grains of xTe are moved by the sliding member and are formed thereby, causing problems such as scratches on the surface of the epitaxial layer of 9Hg 1-xC (!-xTe. A thin CdTe plate is installed in advance on the inner wall surface of the liquid reservoir 5 that accommodates the phase, and this thin plate allows Hg1-xCdxTe to be applied to the edge of the substrate surface.
Methods have been taken to prevent the formation of crystal grains.

しかしこのような方法であると液だめ５中に収容されて
いるＥ（ｇｌ−ｘＣｄｘＴｅの結晶層の材料のＨｇ。However, in this method, the Hg of the crystal layer of E(gl-xCdxTe) accommodated in the liquid reservoir 5.

（Ａ、、Ｔｅの合金を溶融する際あらかじめ団り−ＸＣ
αＸＴｅの結晶層の組成よりＴｅを余分に充填してＴｅ
の溶媒中にＨｇ、　Ｃｄ、　Ｔｅの合金を溶融する形と
なり、このＴｅの溶媒によって液だめ５の内壁面に設置
しであるＣｄＴｅの薄板が溶解し、このＣｄＴｅの成分
がＨｇ、（：ｄ、Ｔｅの液相中に入り込んで液相の組成
が変動し、基板上に形成されるＨｇｘ　−ｘＣ（ｌｘＴ
ｅの結晶層の組成が変動する不都合を生じる。(A,, When melting the Te alloy, it aggregates in advance -XC
Due to the composition of the crystal layer of αXTe, Te is filled with extra Te.
An alloy of Hg, Cd, and Te is melted in a solvent of 5, and a thin plate of CdTe installed on the inner wall of the liquid reservoir 5 is dissolved by this Te solvent, and the components of this CdTe are Hg, (:d , enters the liquid phase of Te, changes the composition of the liquid phase, and forms Hgx -xC(lxT
This results in the disadvantage that the composition of the crystal layer e changes.

（ｄ）　　発明の目的 本発明は上述した欠点を除去し、基板上に形成されるＨ
ｇｘ−ｘＣｄｘＴｅの結晶層が結晶粒を発生しない状態
で形成され、かつ前記Ｈｇ　Ｌ−ｚＣｄｚＴｅの結晶層
が組成変動を生じない状態で形成され得るような新規な
液相エピタキシャル成長方法の提供を目的とするもので
ある。(d) Object of the invention The present invention eliminates the above-mentioned drawbacks and improves the H formed on the substrate.
The purpose of the present invention is to provide a novel liquid phase epitaxial growth method in which a crystal layer of gx-xCdxTe is formed without generating crystal grains, and the crystal layer of HgL-zCdzTe can be formed in a state without compositional variation. It is something to do.

（ｅ）　　発明の構成 かかる目的を達成するための本発明の液相エピタキシャ
ル成長方法は、基板を埋設する支持台とその上をスライ
ドして移動し内壁に基板上に形成すべき結晶層の成分か
らなる薄板をたてかすて設置した貫通孔を有する第１の
スライド部材と、該第１のスライド部材上を移動し、基
板上に形成すべき材料を充填した貫通孔の液だめを有す
る第２のスライド部材とからなり、前記基板上に形成す
べき材料をあらかじめ溶融してから第２のスライド部材
を移動させて、該第２のスライド部材の液だめの溶融材
料を該第１のスライド部材の液だめ中に降下させてから
再び第１のスライド部材を移動させて該第１のスライド
部材の液だめを支持台に埋設している基板上に静置させ
、前記支持台と第１．および第２のスライド部材を加熱
する加熱炉の温度を低下させて基板上に結晶層を形成す
るようにしたことを特徴とするものである。(e) Structure of the Invention In order to achieve the above object, the liquid phase epitaxial growth method of the present invention comprises a support base in which a substrate is buried, a support base in which a substrate is buried, a support base that slides on the support base, and a component of a crystal layer to be formed on the substrate is formed on the inner wall of the support base. a first slide member having a through hole installed by vertically installing a thin plate; a second slide member that moves on the first slide member and has a liquid reservoir in the through hole filled with a material to be formed on the substrate; The material to be formed on the substrate is melted in advance, and then the second slide member is moved to transfer the molten material in the liquid reservoir of the second slide member to the first slide member. is lowered into the liquid reservoir of the first slide member, and then the first slide member is moved again to place the liquid reservoir of the first slide member on the substrate embedded in the support base, and the support base and the first slide member are moved. The present invention is also characterized in that the temperature of the heating furnace that heats the second slide member is lowered to form a crystal layer on the substrate.

「）発明の実施例 以下図面を用いて本発明の一実施例につき詳細に説明す
る。``) Embodiment of the Invention An embodiment of the invention will be described below in detail with reference to the drawings.

第２図は本発明の液相エピタキシャル成長方法に用いる
装置の断面図である。FIG. 2 is a sectional view of an apparatus used in the liquid phase epitaxial growth method of the present invention.

まず直方体形状のカーボンよりなる支持８１１の凹所１
２にＣ４Ｔｅの基板１３ｆ：埋設する。First, the recess 1 of the support 811 made of rectangular parallelepiped carbon.
2: C4Te substrate 13f: buried.

一方該支持台上をスライドして移動し端部に凸部のスト
ッパー１４を有しカーボンよりなる直方体形状の第１の
スライド部材１５ｔ−設ける。そして該第１のスライド
部材１５には方形の貫通孔状の液だめ１６ｔ−形成し、
該液だめの内壁にはＣｄＴｅよりなる薄板１７を几てか
けて設置する。On the other hand, a rectangular parallelepiped-shaped first slide member 15t made of carbon is provided which slides on the support base and has a convex stopper 14 at its end. A liquid reservoir 16t in the form of a rectangular through hole is formed in the first slide member 15,
A thin plate 17 made of CdTe is installed over the inner wall of the liquid reservoir.

一方該第１のスライド部材１５上にはやはり直方体形状
のカーボンよりなる第２のスライド部材１８を設け、該
スライド部材１８には方形の貫通孔状の液だめ１９を形
成し、該液だめ１９内には基板上に形成すべきＨｇ１−
ｚｃｄｚＴｅの結晶層のＨｇ、Ｃｄ、Ｔｅよりなる合金
を充填する。On the other hand, a second slide member 18 also made of carbon and having a rectangular parallelepiped shape is provided on the first slide member 15, and a rectangular through-hole-shaped liquid reservoir 19 is formed in the slide member 18. Inside is Hg1- to be formed on the substrate.
The zcdzTe crystal layer is filled with an alloy consisting of Hg, Cd, and Te.

このような支持台１１と第１のスライド部材１５、第２
のスライド部材１８とを′Ｈ１′・ガス雰囲気内の反応
管中に挿入し該反応管を約５００℃の温度に加熱炉にて
加熱する。このようにすると第２のスライド部材１８の
液だめ１９内のＥ（ｇ、　Ｃｄ、　Ｔｅの合金が溶融し
、基板上に形成すべきＨｇ１−ｘＣｄｚＴｅの組成の液
相２０が形成される。Such a support base 11, the first slide member 15, and the second
The slide member 18 is inserted into a reaction tube in an 'H1' gas atmosphere, and the reaction tube is heated in a heating furnace to a temperature of about 500°C. In this way, the alloy of E(g, Cd, Te) in the liquid reservoir 19 of the second slide member 18 is melted, and a liquid phase 20 having a composition of Hg1-xCdzTe to be formed on the substrate is formed.

次いで第２のスライド部材１８のみ矢印Ｂ方向に移動さ
せ、液だめ１９を第１のスライド部材１５の液だめ１６
上に静置させ液だめ１６中に液相２゜を降下させる。Next, only the second slide member 18 is moved in the direction of arrow B, and the liquid reservoir 19 is moved to the liquid reservoir 16 of the first slide member 15.
2° of liquid phase is allowed to fall into the liquid reservoir 16.

その後第１のスライド部材１５を矢印Ｃ方向に移動させ
、液だめ１６を基板１８上に静置させ、基板１３上にＨ
ｇｌ　−ｚｃｄｚ’ｒｅ　（Ｄ液相２０１＆：ｉ触すセ
、加熱炉の温度を低下させて基板１３上にＨｇ　１−Ｘ
Ｃｄ）ＨＴｅの結晶層を形成する。Thereafter, the first slide member 15 is moved in the direction of arrow C, the liquid reservoir 16 is placed on the substrate 18, and the liquid reservoir 16 is placed on the substrate 13.
gl -zcdz're (D liquid phase 201&:i), the temperature of the heating furnace is lowered and Hg 1-X
Cd) Form a crystalline layer of HTe.

このようにすれば溶融したＨｇｌ　ｚｃｄｚＴｅの液相
はＴｅを溶媒としてその中ＫＨｇ、Ｏｄが飽和状態とな
って溶融しており、このＨｇｔ−ｚＣｄＸＴｅの液相を
第１のスライド部材の貫通孔１６に落下させてＣｄ’Ｔ
　ｅの薄板１７に接触させてもＣｄＴｅの成分が・”（
＋ Ｈｇ　１−ＸＣｃｌＸＴｅの液相中に溶解して入り込む
ようなことがない、 またこのようにして液だめ１６の内壁面に設置しである
（４Ｔｅの薄板によって基板１３上にＨｇ１−エＣ（ｉ
ｘＴｅの結晶層を形成する際、貫通孔のカーボンの゛内
壁によってＨｇ　１−ｘＣｄｘＴ６’の液相が固化する
際のストレスがかからず基板表面の端辺部に結晶粒が形
成されるのが少なくなり、そのため第１のスライド部材
１５を移動させて基板上に残留している不要なＨＦＥｘ
−ｘＣｄｘＴｅの液相を除去する際、該結晶粒によって
基板表面に傷が発生するのを防止することができ平坦な
表面を有するＨｇ１−ＸＣｄＸＴｅのエピタキシャル結
晶層が得られる利点を生じる。In this way, the liquid phase of the molten Hgl-zcdzTe is melted using Te as a solvent with KHg and Od in it being saturated, and the liquid phase of Hgt-zCdXTe is transferred to the through hole 16 of the first slide member. Cd'T
Even if it comes into contact with the thin plate 17 of e, the CdTe component is...
+Hg1-XCclXTe does not dissolve into the liquid phase and is installed on the inner wall surface of the liquid reservoir 16 in this way. i
When forming the xTe crystal layer, the carbon inner wall of the through hole does not apply stress when the liquid phase of Hg 1-xCdxT6' solidifies, and crystal grains are formed at the edges of the substrate surface. Therefore, the first slide member 15 is moved to remove unnecessary HFEx remaining on the substrate.
When the liquid phase of -xCdxTe is removed, scratches on the substrate surface due to the crystal grains can be prevented, resulting in the advantage that an epitaxial crystal layer of Hg1-XCdXTe having a flat surface can be obtained.

また本発明の方法はｃｄ’ｒｅの基板上にＨｇ１−ｘＣ
ｄｘＴｅ’の結晶層を形成する場合に適用されるのみな
らず、その他テμμ化鉛（Ｐ’ｂＴｅ）の基板上に鉛（
Ｐｂ）を含む化合物半導体結晶上液相エピタキシャル成
長させる場合においても、前記支持台にＰｂＴｅの基板
を設置し、第１のスライド部材の貫通孔の内壁にＰｂＴ
ｅの薄板をたてかけ、第２のスライド部材の貫通孔に鉛
を含む化合物半導体の液相を充填した状態にし念のち１
本発明の方法を用いて鉛を含む化合物半導体結晶をエピ
タキシャル成長させることができる。ここで本実施例で
は、溶液溜にＣ（ＬＴｅの薄板を設置したが、これはＣ
ｄＴｅ結晶が容易に入手できるからであり、当然ながら
基板上に形成する結晶層の成分と同一の結晶が最も効果
的である、 召）発明の効果 以上述べ友ように本発明の方法によれば基板上に化合物
半導体の結晶層を表面が平坦な状態でエピタキシャル成
長させることができ、またこのような平坦な表面のエピ
タキシャル層を有する基板を用いて赤外線検知素子を形
成すれば素子形成の歩留も向上する利点を有する。In addition, the method of the present invention provides Hg1-xC on the CD're substrate.
It is applied not only to the formation of a crystal layer of dxTe', but also to the formation of lead (P'bTe) substrates.
Even in the case of liquid phase epitaxial growth on a compound semiconductor crystal containing Pb), a PbTe substrate is installed on the support base, and a PbTe substrate is placed on the inner wall of the through hole of the first slide member.
Stand the thin plate e and fill the through hole of the second slide member with the liquid phase of the compound semiconductor containing lead.
A compound semiconductor crystal containing lead can be epitaxially grown using the method of the present invention. In this example, a thin plate of C (LTe) was installed in the solution reservoir;
This is because dTe crystals are easily available, and of course a crystal that has the same composition as the crystal layer formed on the substrate is most effective. It is possible to epitaxially grow a compound semiconductor crystal layer on a substrate with a flat surface, and if an infrared sensing element is formed using a substrate with such a flat epitaxial layer, the yield of element formation can be improved. It has the advantage of improving.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は従来の液相エピタキシャＩｌ／Ｉ？、長方法に
用いる装置の断面図、第２図は本発明の液相エピタキシ
ャル成長方法に用いる装置の断面図である。 図において１，１１は支持台、２．１２は凹所、３．１
３はＣＣＬ　Ｔ　ｅ基板、４はスライド部材、５．１６
．１９は液だめ、１４はストッパー、１５は第１のスラ
イド部材、１７はＣｄＴｅの薄板、１８は第２のスライ
ド部材、２０けミドＸＣｄＸＴｅの液相、Ａ、Ｂ、Ｃは
ヌライド方向を示す矢印である。Figure 1 shows a conventional liquid phase epitaxy Il/I? FIG. 2 is a sectional view of an apparatus used in the liquid phase epitaxial growth method of the present invention. In the figure, 1 and 11 are support stands, 2.12 is a recess, and 3.1
3 is the CCL Te board, 4 is the slide member, 5.16
．． 19 is a liquid reservoir, 14 is a stopper, 15 is a first slide member, 17 is a CdTe thin plate, 18 is a second slide member, 20 is a liquid phase of XCdXTe, and A, B, and C are arrows indicating the nullide direction. It is.

Claims (1)

【特許請求の範囲】[Claims] 基板を埋設する支持台とその上をスライドして移動し内
壁に基板上に形成すべき結晶層の成分からなる薄板をた
てかけて設置した貫通孔を有する第１のスライド部材と
、該第１のスライド部材上を移動し、基板上に形成すべ
き材料を充填した貫通孔の液だめを有する第２のスライ
ド部材とからなり、前記基板上に形成すべき材料をあら
かじめ溶融してから第２のスライド部材を移動させて、
該第２のスライド部材の液だめの溶融材料を該第１のス
ライド部材の液だめ中に降下させてから再び第１のスラ
イド部材を移動させて該第１のスライド部材の液だめを
支持台に埋設している基板上に静置させ、前記支持台と
第１および第２のスライド部材を加熱する加熱炉の温度
を低下させて、基板上に結晶層を形成するようにし几こ
とを特徴とする液相エピタキシャル成長方法。A first slide member having a support base in which the substrate is buried, a through hole that slides on the support base and has a thin plate made of a component of a crystal layer to be formed on the substrate vertically installed on the inner wall; a second slide member that moves on the first slide member and has a through-hole liquid reservoir filled with the material to be formed on the substrate, and the material to be formed on the substrate is melted in advance and then Move the slide member 2,
The molten material in the reservoir of the second slide member is lowered into the reservoir of the first slide member, and then the first slide member is moved again to place the reservoir of the first slide member on a support base. The crystal layer is placed on a substrate buried in the substrate, and the temperature of a heating furnace that heats the support base and the first and second slide members is lowered to form a crystal layer on the substrate. A liquid phase epitaxial growth method.
JP57095771A 1982-06-03 1982-06-03 Liquid phase epitaxially growth method Pending JPS58212142A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57095771A JPS58212142A (en) 1982-06-03 1982-06-03 Liquid phase epitaxially growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57095771A JPS58212142A (en) 1982-06-03 1982-06-03 Liquid phase epitaxially growth method

Publications (1)

Publication Number Publication Date
JPS58212142A true JPS58212142A (en) 1983-12-09

Family

ID=14146743

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57095771A Pending JPS58212142A (en) 1982-06-03 1982-06-03 Liquid phase epitaxially growth method

Country Status (1)

Country Link
JP (1) JPS58212142A (en)

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