JPS6410091B2 - - Google Patents
Info
- Publication number
- JPS6410091B2 JPS6410091B2 JP18458680A JP18458680A JPS6410091B2 JP S6410091 B2 JPS6410091 B2 JP S6410091B2 JP 18458680 A JP18458680 A JP 18458680A JP 18458680 A JP18458680 A JP 18458680A JP S6410091 B2 JPS6410091 B2 JP S6410091B2
- Authority
- JP
- Japan
- Prior art keywords
- melt
- compound semiconductor
- vapor pressure
- heat treatment
- gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 33
- 150000001875 compounds Chemical class 0.000 claims description 31
- 238000010438 heat treatment Methods 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- 239000000470 constituent Substances 0.000 claims description 10
- 230000008018 melting Effects 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- 239000000155 melt Substances 0.000 claims description 3
- SVDVJBWDBYSQLO-UHFFFAOYSA-N 5-(4-hydroxy-3-methoxyphenyl)-5-phenylimidazolidine-2,4-dione Chemical compound C1=C(O)C(OC)=CC(C2(C(NC(=O)N2)=O)C=2C=CC=CC=2)=C1 SVDVJBWDBYSQLO-UHFFFAOYSA-N 0.000 claims 1
- 101000937642 Homo sapiens Malonyl-CoA-acyl carrier protein transacylase, mitochondrial Proteins 0.000 claims 1
- 102100027329 Malonyl-CoA-acyl carrier protein transacylase, mitochondrial Human genes 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 25
- 235000012431 wafers Nutrition 0.000 description 15
- 229920006395 saturated elastomer Polymers 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【発明の詳細な説明】
本発明は化合物半導体を高温で熱処理する方法
に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of heat treating a compound semiconductor at high temperature.
イオン注入をおこなつた化合物半導体は650゜〜
1000℃の範囲の熱処理を経なければならない。と
ころが、化合物半導体を構成する元素の中には
Ｐ，As，Sbなどのような蒸気圧が大きいものが
あるので、これら高蒸気圧の元素を含む化合物半
導体を高温で熱処理するためには、化合物半導体
表面を何らかの膜で被覆することをおこなうか又
は、該高蒸気圧の元素を含んだガス雰囲気中に曝
して熱処理することをおこなわねばならなかつ
た。しかし膜で被覆して熱処理する前者の方法に
は、化合物半導体中の不純物や構成元素の一部が
該膜中に侵入してしまう問題があつた。一方後者
の方法（一般にキヤツプレスアニーリングと称し
ている）は、ガスの圧力や流量に依存して熱処理
後の半導体表面が曇ることが数多く生じた。こ
の、表面が劣化する原因は、高蒸気圧の元素の飽
和蒸気圧が再現性良く、また制御性良く得られ難
いことにあつた。 Compound semiconductors with ion implantation are 650°~
Must undergo heat treatment in the range of 1000℃. However, some of the elements constituting compound semiconductors have high vapor pressures, such as P, As, and Sb, so in order to heat-treat compound semiconductors containing these high vapor pressure elements at high temperatures, It was necessary to cover the semiconductor surface with some kind of film or to heat-treat it by exposing it to a gas atmosphere containing the high vapor pressure element. However, the former method, in which the compound semiconductor is coated with a film and then heat-treated, has a problem in that impurities and some of the constituent elements in the compound semiconductor enter the film. On the other hand, in the latter method (generally referred to as capsule annealing), the semiconductor surface often becomes cloudy after heat treatment depending on the pressure and flow rate of the gas. The cause of this surface deterioration was that it was difficult to obtain a saturated vapor pressure of a high vapor pressure element with good reproducibility and good controllability.
上記の熱処理方法の問題点や欠点を解決する１
つの方法としてGaは侵入しないがAs蒸気の交換
は可能なカーボン製容器に熱処理をおこなう化合
物半導体としてGaAsウエーハを入れ、次に
GaAsがあらかじめ溶かし込まれたGa溶融液中に
該容器を挿入して加熱する方法がMCAT（Melt
Controlled Ambient Technique）として最近提
案された。このMCATではGa溶融液で囲まれた
空間内のAsの圧力が飽和蒸気圧に到達するまで
Gaメルト表面から高蒸気圧のAsが自動的に供給
されるので、該空間内に熱処理をおこないたい
GaAsウエーハをあらかじめ置いておくだけで、
自動的にかつ安定して得られるAsの飽和蒸気圧
の雰囲気下でGaAsの熱処理をおこなうことがで
きる。しかし熱処理を長時間や繰り返しておこな
つたりすると、Ga溶融液中の高蒸気圧のAsの量
が減少し、従つて飽和蒸気圧に到達する時間が長
くなり、その結果、ウエーハ表面の劣化を生じる
問題があつた。すなわち、従来のMCAT法は本
質的に長時間の熱処理や大容積の空間を必要とす
る多数枚のウエーハの熱処理をおこなえないなど
の欠点があつた。 Solving the problems and drawbacks of the above heat treatment method 1
One method is to place a GaAs wafer as a compound semiconductor to be heat-treated in a carbon container that does not allow Ga to enter but allows the exchange of As vapor.
MCAT (Melt
Controlled Ambient Technique). In this MCAT, the pressure of As in the space surrounded by the Ga melt reaches the saturated vapor pressure.
As high vapor pressure As is automatically supplied from the surface of the Ga melt, heat treatment can be carried out within the space.
Just by placing the GaAs wafer in advance,
GaAs can be heat-treated automatically and stably in an atmosphere with a saturated As vapor pressure. However, if heat treatment is performed for a long time or repeatedly, the amount of As with high vapor pressure in the Ga melt will decrease, and therefore the time to reach the saturated vapor pressure will become longer, resulting in deterioration of the wafer surface. There was a problem that arose. In other words, the conventional MCAT method inherently has drawbacks such as the inability to heat treat a large number of wafers, which requires a long heat treatment time and a large volume of space.
本発明の目的は化合物半導体ウエーハを生産性
に優れかつ表面劣化を生じないように高温で熱処
理できる化合物半導体の熱処理方法を提供するこ
とにある。 SUMMARY OF THE INVENTION An object of the present invention is to provide a compound semiconductor heat treatment method that can heat compound semiconductor wafers at high temperatures with excellent productivity and without causing surface deterioration.
本発明によれば熱処理しようとする化合物半導
体を構成する構成元素のうち、少なくとも一種類
以上の低融点構成元素の溶融液中に高蒸気圧を持
つた他の構成元素を溶かし込んでなる金属溶融液
から、前記高蒸気圧を持つた構成元素を供給しな
がら熱処理を行なうMCAT（Melt Controlled
Ambient Technique）法において、前記金属溶
融液上に熱処理しようとする化合物半導体を構成
する元素のうち低融点元素と高蒸気圧元素とを含
んでなる化合物半導体を載置せしめ、前記金属溶
融液中に、前記載置せしめた化合物半導体から前
記高蒸気圧を持つた構成元素を供給しながら熱処
理を行なうことを特徴とする化合物半導体の熱処
理方法が得られる。 According to the present invention, a metal molten product is obtained by dissolving other constituent elements having a high vapor pressure into a melt of at least one kind of low melting point constituent elements among the constituent elements constituting the compound semiconductor to be heat-treated. MCAT (Melt Controlled
In the Ambient Technique method, a compound semiconductor containing a low melting point element and a high vapor pressure element among the elements constituting the compound semiconductor to be heat treated is placed on the metal melt, and the compound semiconductor is placed in the metal melt. There is obtained a method for heat treatment of a compound semiconductor, characterized in that the heat treatment is carried out while supplying the constituent elements having a high vapor pressure from the compound semiconductor placed above.
次に本発明の詳細を化合物半導体としてGaAs
基板を用いた場合についての一実施例とともに説
明をおこなう。 Next, we will explain the details of the present invention using GaAs as a compound semiconductor.
An example of the case where a substrate is used will be explained.
第１図は本発明の原理を説明するための図で、
発明を実施するための第１の装置の断面図を示
す。まず、底に多数個の貫通孔（全孔面積は1.8
cm2）を有するカーボン製の第１の容器１２にGa
溶融液を入れ、さらに熱処理温度下で該Ga溶融
液中にAs又はGaAsを少なくとも該温度における
溶解度まであらかじめ溶かし込んでおく。次に
Asが溶解度以上にまで溶けている前記Ga溶融液
１１上にGaAs１３を載置し、水素ガス流中600
℃で熱処理をおこないGa溶融液表面の酸化膜を
除去する。一方、カーボン製の第２の容器１４に
熱処理するGaAsウエーハ１５を入れる。次に第
１の容器１２で第２の容器１４に蓋をする。この
とき第１及び第２の容器とGa溶融液とで囲まれ
た空間１６（容積は0.01cm3）はあらかじめ水素で
置換しておく。水素は精製した純水素を用いる。
最後に本装置を950℃に徐々に加熱して熱処理を
おこなつた。熱処理の温度と時間はイオン注入条
件によつて適当な値を任意に選ぶことができる。 FIG. 1 is a diagram for explaining the principle of the present invention.
1 shows a sectional view of a first device for implementing the invention; FIG. First, there are many through holes on the bottom (total hole area is 1.8
cm 2 ) in a carbon first container 12 with Ga
A melt is poured into the Ga melt, and As or GaAs is preliminarily dissolved in the Ga melt at a heat treatment temperature to at least the solubility at the temperature. next
GaAs 13 is placed on the Ga melt 11 in which As is dissolved to a level higher than its solubility, and the GaAs 13 is placed on the Ga melt 11 in which As is dissolved to a level higher than its solubility.
Heat treatment is performed at ℃ to remove the oxide film on the surface of the Ga melt. On the other hand, a GaAs wafer 15 to be heat treated is placed in a second container 14 made of carbon. Next, the second container 14 is covered with the first container 12. At this time, the space 16 (volume: 0.01 cm 3 ) surrounded by the first and second containers and the Ga melt is replaced with hydrogen in advance. Purified pure hydrogen is used as hydrogen.
Finally, the device was heated gradually to 950°C for heat treatment. The temperature and time of the heat treatment can be arbitrarily selected as appropriate values depending on the ion implantation conditions.
次に金属溶融液上に載置せしめた化合物半導体
の役割を第１図と第２図を用いて説明する。金属
溶融液２１特にGaの溶融液は強い表面張力のた
め球状になり易いが、溶融液が球状になると第２
図に示すように空間２６は閉じなくなり、空間２
６内の蒸発元素は飽和しなくなる。このように第
１図のGa溶融液１１上のGaAs１３はGa溶融液
１１を押しつぶす重石の働きをしている。Ga溶
融液１１上のGaAs１３のさらに重要な役割は、
該Ga溶融液１１中の高蒸気圧元素であるAsが不
足したときに、GaAs１３がGa溶融液１１中に溶
け込んで不足分を補うことである。このように金
属溶融液上に、少なくとも該金属と高蒸気圧元素
とからなる化合物半導体を載置せしめることによ
り長時間の熱処理や、多数枚ウエーハの大規模な
熱処理を簡単にかつ再現性良くおこなうことがで
きる。また第１の容器の底の貫通孔は蒸発元素の
通り道になるだけでなく、Gaのような金属溶融
液がGaAsのような化合物半導体ウエーハと直接
触れることを防止する働きをする。 Next, the role of the compound semiconductor placed on the metal melt will be explained using FIGS. 1 and 2. Metal molten liquid 21 Ga molten liquid in particular tends to become spherical due to its strong surface tension, but if the molten liquid becomes spherical, the second
As shown in the figure, the space 26 no longer closes, and the space 2
The evaporated elements within 6 become unsaturated. In this way, the GaAs 13 on the Ga melt 11 in FIG. 1 acts as a weight to crush the Ga melt 11. The more important role of GaAs 13 on Ga melt 11 is
When As, which is a high vapor pressure element, is insufficient in the Ga melt 11, GaAs 13 is dissolved into the Ga melt 11 to compensate for the shortage. By placing a compound semiconductor consisting of at least the metal and a high vapor pressure element on top of the metal melt, long-term heat treatment or large-scale heat treatment of a large number of wafers can be performed easily and with good reproducibility. be able to. Further, the through hole at the bottom of the first container not only serves as a passage for the evaporated elements, but also serves to prevent a molten liquid of a metal such as Ga from coming into direct contact with a compound semiconductor wafer such as GaAs.
次に生産に適した大規模な装置を用いた場合の
本発明の他の実施例について、装置の断面を示す
第３図を用いて説明する。化合物半導体ウエーハ
としてGaAs基板上にエピタキシアル成長した
Al0.3Ga0.7As層を用いた。Gaを溶かしたGa溶融
液３１を底に複数個の貫通孔を有するカーボン製
の第１の容器３２に入れ、さらに前記Ga溶融液
３１上にGaAs３３を載置し、水素ガス流中600
℃で熱処理をおこないGa溶融液３１表面の酸化
膜を除去した。一方、カーボン製の第２の容器３
４に熱処理されるAl0.3Ga0.7Asのウエーハ３５を
多数枚入れ、次に第１の容器３２で第２の容器３
４に蓋をする。最後に先の実施例と同様に水素で
置換したのち800℃、１時間の熱処理をおこなう。
熱処理後の表面は極めて平滑であつた。 Next, another embodiment of the present invention using a large-scale apparatus suitable for production will be described with reference to FIG. 3, which shows a cross section of the apparatus. Epitaxially grown on a GaAs substrate as a compound semiconductor wafer
An Al 0.3 Ga 0.7 As layer was used. A Ga melt 31 in which Ga has been dissolved is placed in a first container 32 made of carbon having a plurality of through holes in the bottom, and GaAs 33 is placed on the Ga melt 31, and the GaAs 33 is placed in a hydrogen gas flow for 600 m
The oxide film on the surface of the Ga melt 31 was removed by heat treatment at .degree. On the other hand, the second container 3 made of carbon
A large number of Al 0.3 Ga 0.7 As wafers 35 to be heat treated are placed in the first container 32 and then transferred to the second container 3.
Put the lid on step 4. Finally, as in the previous example, after replacing with hydrogen, heat treatment is performed at 800° C. for 1 hour.
The surface after heat treatment was extremely smooth.
次にこの優れた本発明の熱処理方法において、
表面劣化を避けるために重要な要素である蒸発元
素が飽和蒸気圧に到達する時間ｔについて検討
し、さらに本発明の熱処理方法が実用的にも優れ
たものであることを説明する。ここでは化合物半
導体としてGaAsを、高蒸気圧の蒸発元素として
Asを例に説明をおこなう。 Next, in this excellent heat treatment method of the present invention,
The time t for the evaporated elements to reach the saturated vapor pressure, which is an important element for avoiding surface deterioration, will be discussed, and furthermore, the practical superiority of the heat treatment method of the present invention will be explained. Here, GaAs is used as a compound semiconductor, and GaAs is used as a high vapor pressure evaporation element.
Let's explain using As as an example.
単位時間に蒸発面積がＳであるGa溶融液から
蒸発するAsの量Ｗは次式に従つて計算される。 The amount W of As evaporated from a Ga melt with an evaporation area S per unit time is calculated according to the following equation.
Ｗ＝xSPAS（Ｍ／2πRoT）1/2 (1)
ここでは蒸発係数、PASは温度Ｔにおける蒸
発元素のAsの飽和蒸気圧、ｘとＭは少なくとも
溶解度まで溶けているAsのGaメルト表面におけ
るモル分率と分子量、Roは気体定数である。As
が容積υ内で飽和蒸気に達するまで蒸発するには
ω＝MPυ／RT (2)
のAsが必要である。従つて
となる。＝１，ｘ＝2.2×10-2，Ｔ＝1073゜K，
Ｍ＝74.9ｇ，mol-1とする(3)式は
ｔ＝3.3×10-3υ／Ｓ (4)
と表わされる。実施例１の装置はυ＝0.01cm3，Ｓ
＝1.8cm2であるからｔ＝1.84×10-5秒となる。熱処
理を受けるGaAsウエーハの表面あるいは周囲は
昇温とともに飽和蒸気圧に瞬時に達することがわ
かる。650゜〜1000℃の温度範囲でｔ＜１〜２秒で
あることが必要と考えられているが、第３図に示
す第２の実施例の装置（υ＝16cm2，Ｓ＝1.8cm2）
でも高々ｔ＝0.03秒であるから、この生産用の装
置でもAsが飽和蒸気圧に達するのは充分に短時
間であることが理解できる。 W=xSP AS (M/2πRoT) 1/2 (1) Here, the evaporation coefficient, P AS is the saturated vapor pressure of the evaporated element As at temperature T, and x and M are the Ga melt surface of As dissolved at least to the solubility. molar fraction and molecular weight, Ro is the gas constant. As
To evaporate until reaching saturated vapor within the volume υ, ω=MPυ/RT (2) of As is required. Accordingly becomes. =1, x=2.2×10 -2 , T=1073°K,
Equation (3) where M=74.9g and mol -1 is expressed as t=3.3×10 -3 υ/S (4). The device of Example 1 has υ=0.01cm 3 , S
= 1.8 cm 2 , so t = 1.84 x 10 -5 seconds. It can be seen that the surface or surrounding area of the GaAs wafer undergoing heat treatment instantly reaches saturated vapor pressure as the temperature rises. It is thought that it is necessary that t < 1 to 2 seconds in the temperature range of 650° to 1000°C . )
However, since t=0.03 seconds at most, it can be understood that it is a sufficiently short time for As to reach the saturated vapor pressure even in this production equipment.
尚、AsはGa溶融液から蒸発するのみならず熱
処理するGaAsウエーハからも蒸発するが、Ga溶
融液中のAsの拡散係数（800℃で２×10-5cm2・
sec-1）に比べてGaAs中のAsの拡散係数は８桁
も低いために、GaAs表面のAs濃度がたとえば３
％減少する範囲はGaAs表面からわずか25Å程度
にすぎなく、GaAs表面の劣化に及ぼすようなAs
の蒸発はほとんどないことがわかる。 Note that As evaporates not only from the Ga melt but also from the heat-treated GaAs wafer, but the diffusion coefficient of As in the Ga melt (2×10 -5 cm 2 at 800°C)
sec -1 ), the diffusion coefficient of As in GaAs is eight orders of magnitude lower than that of
% reduction is only about 25 Å from the GaAs surface, and As
It can be seen that there is almost no evaporation.
以上述べたように本発明を実施することによ
り、化合物半導体を表面の劣化をともなわずに生
産性良く高温で熱処理することができる。またイ
オン注入した不純物が高蒸気圧の元素である場合
にも本発明の思想が適用できる。 By carrying out the present invention as described above, a compound semiconductor can be heat-treated at high temperatures with good productivity without surface deterioration. The idea of the present invention can also be applied when the ion-implanted impurity is an element with a high vapor pressure.
以上の説明では金属溶融液としてGaを、化合
物半導体としてGaAsとAlGaAsを例に述べてき
たが、In元素を構成元素とする化合物半導体にお
いては金属溶融液としてはInでも良く、この種の
化合物半導体としてはGaP，InP，InAs，GaSb，
InSbさらにはInGaP，InGaAsPなどがある。 In the above explanation, we have used Ga as an example of the metal melt and GaAs and AlGaAs as the compound semiconductors, but in the case of compound semiconductors containing In as a constituent element, In may be used as the metal melt, and this type of compound semiconductor GaP, InP, InAs, GaSb,
In addition to InSb, there are also InGaP, InGaAsP, etc.
InGaAsPの場合にはGa溶融液中にInGaAsPを
溶かし込んで、AsとＰのソースとするのが良い。
さらに実施例では金属溶融液を入れる第１の容器
の材料としてカーボンを例に説明してきたが、金
属溶融液と反応を生じ難いBNなどを用いても良
い。 In the case of InGaAsP, it is preferable to dissolve the InGaAsP into the Ga melt and use it as a source of As and P.
Further, in the embodiments, carbon has been used as an example of the material for the first container containing the molten metal, but BN or the like, which does not easily react with the molten metal, may also be used.
第１図、第３図は本発明を実施するための装置
の断面図で、第２図は本発明を説明するための断
面図である。これらの図で、１１，３１はGa溶
融液、１２，２２，３２は第１の容器、１３，３
３はGaAs、１４，２４，３４は第２の容器、１
５は熱処理されるGaAsウエーハ、３５は熱処理
されるAlGaAs／GaAsウエーハ、１６，２６は
閉じた空間を、また２１は金属溶融液、２５は化
合物半導体ウエーハをそれぞれ示す。
1 and 3 are cross-sectional views of an apparatus for carrying out the present invention, and FIG. 2 is a cross-sectional view for explaining the present invention. In these figures, 11 and 31 are Ga melt, 12, 22, and 32 are first containers, and 13 and 3 are
3 is GaAs, 14, 24, 34 are the second containers, 1
5 is a GaAs wafer to be heat treated, 35 is an AlGaAs/GaAs wafer to be heat treated, 16 and 26 are closed spaces, 21 is a metal melt, and 25 is a compound semiconductor wafer.
Claims (1)
構成元素のうち、少なくとも一種類以上の低融点
構成元素の溶融液中に高蒸気圧を持つた他の構成
元素を溶かし込んでなる金属溶融液から、前記高
蒸気圧を持つた構成元素を供給しながら熱処理を
行なうMCAT（Melt Controlled Ambient
Technique）法において、前記金属溶融液上に熱
処理しようとする化合物半導体を構成する元素の
うち低融点元素と高蒸気圧元素とを含んでなる化
合物半導体を載置せしめ、前記金属溶融液中に、
前記載置せしめた化合物半導体から前記高蒸気圧
を持つた構成元素を供給しながら熱処理を行なう
ことを特徴とする化合物半導体の熱処理方法。1. Among the constituent elements constituting the compound semiconductor to be heat-treated, the above-mentioned metal melt is obtained by dissolving other constituent elements having a high vapor pressure into a melt of at least one kind of low melting point constituent element. MCAT (Melt Controlled Ambient
In the method, a compound semiconductor containing a low melting point element and a high vapor pressure element among the elements constituting the compound semiconductor to be heat-treated is placed on the metal melt, and in the metal melt,
A method for heat treatment of a compound semiconductor, characterized in that the heat treatment is carried out while supplying the constituent element having a high vapor pressure from the compound semiconductor placed above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18458680A JPS57107025A (en) | 1980-12-25 | 1980-12-25 | Heat treatment of compound semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18458680A JPS57107025A (en) | 1980-12-25 | 1980-12-25 | Heat treatment of compound semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57107025A JPS57107025A (en) | 1982-07-03 |
| JPS6410091B2 true JPS6410091B2 (en) | 1989-02-21 |
Family
ID=16155793
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18458680A Granted JPS57107025A (en) | 1980-12-25 | 1980-12-25 | Heat treatment of compound semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57107025A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63283020A (en) * | 1987-05-14 | 1988-11-18 | Sanyo Electric Co Ltd | Heat treating method |
| KR100407955B1 (en) * | 2001-05-29 | 2003-12-03 | 엘지전자 주식회사 | method for forming GaAs on fusion substrate |
-
1980
- 1980-12-25 JP JP18458680A patent/JPS57107025A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57107025A (en) | 1982-07-03 |
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