JPH0585887A - Apparatus for growing crystal and method therefor - Google Patents
Apparatus for growing crystal and method thereforInfo
- Publication number
- JPH0585887A JPH0585887A JP28212791A JP28212791A JPH0585887A JP H0585887 A JPH0585887 A JP H0585887A JP 28212791 A JP28212791 A JP 28212791A JP 28212791 A JP28212791 A JP 28212791A JP H0585887 A JPH0585887 A JP H0585887A
- Authority
- JP
- Japan
- Prior art keywords
- melt
- crystal growth
- substrate
- boat
- lid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は結晶成長装置及び結晶
成長方法に関し、特に解離しやすい元素を含む化合物半
導体結晶を成長させるための結晶成長装置及び結晶成長
方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a crystal growth apparatus and a crystal growth method, and more particularly to a crystal growth apparatus and a crystal growth method for growing a compound semiconductor crystal containing an element which is easily dissociated.
【０００２】[0002]
【従来の技術】図３は従来の結晶成長装置である結晶成
長用ボートを示す断面図であり、図において、１はその
表面に凹部（基板載置部）１ａを有し、該凹部１ａにＣ
ｄＴｅ基板２を載置するためのサセプタ、３は結晶成長
用ボートの後方側に配置され、上部に開口部を有する融
液収納部、４は該収納部３に収納された結晶成長用の融
液、５は結晶成長用ボートの前方側に配置され、上部に
開口部を有する基板収納部で、上記基板２周辺を所定の
雰囲気に設定するためのものである。また６は上記融液
収納部３及び基板収納部５の開口部を塞ぐ蓋部材、１４
は融液収納部３の側壁に設けられ、結晶成長用ボートを
移動させるための引張り棒である。上記１〜６および１
４により結晶成長装置５０が構成されている。2. Description of the Related Art FIG. 3 is a cross-sectional view showing a crystal growth boat which is a conventional crystal growth apparatus. In FIG. 3, reference numeral 1 denotes a recess (substrate mounting portion) 1a on the surface thereof. C
A susceptor 3 for mounting the dTe substrate 2 is arranged on the rear side of the crystal growth boat, and a melt storage part having an opening at the upper part is a melt growth part 4 for crystal growth stored in the storage part 3. The liquids 5 are arranged on the front side of the crystal growth boat and have a substrate storage portion having an opening at the top, and are for setting a predetermined atmosphere around the substrate 2. Further, 6 is a lid member for closing the openings of the melt storage part 3 and the substrate storage part 5, 14
Is a pull rod provided on the side wall of the melt storage unit 3 for moving the boat for crystal growth. 1 to 6 and 1 above
The crystal growth apparatus 50 is constituted by 4.
【０００３】次に、図３に示した結晶成長装置を用いて
ＨｇＣｄＴｅ（以下ＣＭＴと略す）の結晶成長を行う方
法について説明する。Next, a method for growing crystals of HgCdTe (hereinafter abbreviated as CMT) using the crystal growth apparatus shown in FIG. 3 will be described.
【０００４】まず、図３(a) に示すように、サセプタ１
の凹部１ａ内にＣｄＴｅ基板２を載置し、Ｈｇ，Ｃｄ，
Ｔｅよりなる融液４を融液収納部３に充填する。その
後、上記融液収納部３と基板収納部５の上部を蓋部材６
で覆う。次に、この状態で、不活性ガスもしくは還元ガ
ス雰囲気に暴露あるいは真空引きすることにより、該蓋
部材６と融液収納部３あるいは基板収納部５とが接触し
ている部分の僅かなすき間１０を通して、融液４及び基
板２周囲の雰囲気を真空状態あるいは不活性ガスもしく
は還元ガスで置換した状態にし、その後結晶成長用ボー
トを５００℃程度に加熱保持する。First, as shown in FIG. 3 (a), the susceptor 1
The CdTe substrate 2 is placed in the concave portion 1a of Hg, Cd,
The melt 4 made of Te is filled in the melt storage unit 3. After that, the lid member 6 is placed on top of the melt storage portion 3 and the substrate storage portion 5.
Cover with. Next, in this state, by exposing or vacuuming to an atmosphere of an inert gas or a reducing gas, a slight gap 10 between the lid member 6 and the melt storage unit 3 or the substrate storage unit 5 is in contact. Through, the atmosphere around the melt 4 and the substrate 2 is brought into a vacuum state or a state in which it is replaced with an inert gas or a reducing gas, and then the crystal growth boat is heated and held at about 500 ° C.
【０００５】加熱により融液４が充分均質化した後、ボ
ートを引張り棒１４により押して、図３(b) に示したよ
うに融液４がＣｄＴｅ基板２と接触するような位置まで
ボートを摺動させる。この状態のまま、０．５℃／分の
速度で装置を３０分間徐冷して、ＣｄＴｅ基板２上にＣ
ＭＴ結晶を成長させる。After the melt 4 is sufficiently homogenized by heating, the boat is pushed by the pull rod 14 to slide the boat to a position where the melt 4 comes into contact with the CdTe substrate 2 as shown in FIG. 3 (b). To move. In this state, the device is gradually cooled at a rate of 0.5 ° C./min for 30 minutes, and C is deposited on the CdTe substrate 2.
Grow MT crystal.
【０００６】ある程度まで結晶成長させた後、再び融液
収納部３を引っ張り棒１４を引っ張って摺動させ、図３
(a) に示したように融液４をＣｄＴｅ基板２から分離
し、結晶成長を終了する。After the crystal has grown to a certain degree, the melt containing portion 3 is pulled again and the pull rod 14 is pulled to slide it.
As shown in (a), the melt 4 is separated from the CdTe substrate 2 and the crystal growth is completed.
【０００７】[0007]
【発明が解決しようとする課題】ところが従来の結晶成
長方法では、上記融液４が高温に保持されている間は、
融液４中のＨｇが蓋部材６と融液収納部３とが接触して
いるすき間１０を通って融液収納部３より蒸発してしま
う。このため融液４中のＨｇ組成が変化してしまい、所
定のＨｇ組成のＣＭＴ結晶が得られないばかりか、徐冷
中にも同様にＨｇが抜けてしまい、結晶の厚み方向で均
一なＨｇ組成のＣＭＴ結晶が得られないという問題点が
あった。However, in the conventional crystal growth method, while the melt 4 is kept at a high temperature,
Hg in the melt 4 passes through the gap 10 where the lid member 6 and the melt containing portion 3 are in contact with each other and is evaporated from the melt containing portion 3. For this reason, the Hg composition in the melt 4 changes, so that not only CMT crystals having a predetermined Hg composition cannot be obtained, but also Hg escapes during slow cooling, resulting in a uniform Hg composition in the thickness direction of the crystal. There is a problem that CMT crystals cannot be obtained.
【０００８】この発明は上記のような問題点を解消する
ためになされたもので、結晶成長工程におけるＨｇの蒸
発を防止して、均質な組成のＣＭＴを再現性良く得るこ
とができる結晶成長装置及び結晶成長方法を提供するこ
とを目的とする。The present invention has been made in order to solve the above problems, and it is possible to prevent evaporation of Hg in the crystal growth step and obtain CMT having a uniform composition with good reproducibility. And a crystal growth method.
【０００９】[0009]
【課題を解決するための手段】この発明に係る結晶成長
装置は、基板を載置するための基板載置部を有するサセ
プタと、上面が開口した、融液を収納するための融液収
納部、及び該融液収納部の開口を塞ぐ蓋部材を有し、上
記サセプタ上を融液収納部に結晶成長用融液を溜めて移
動する結晶成長用ボートとを備え、上記サセプタ上に載
置された基板の結晶成長を行う結晶成長装置において、
上記蓋部材を上記融液収納部側に押し付けて該融液収納
部内をほぼ密閉状態にすることが可能な蓋押圧部材を備
えたものである。A crystal growth apparatus according to the present invention includes a susceptor having a substrate mounting portion for mounting a substrate, and a melt storage portion for storing a melt having an open upper surface. And a crystal growth boat that has a lid member that closes the opening of the melt storage part, and that moves on the susceptor by storing the crystal growth melt in the melt storage part and moving it on the susceptor. In the crystal growth apparatus for performing crystal growth of the formed substrate,
A lid pressing member capable of pressing the lid member against the melt containing portion to make the inside of the melt containing portion substantially sealed is provided.
【００１０】この発明は、上記結晶成長装置において、
上記結晶成長用ボートを、上記融液収納部の上面開口面
がボート前方側が低くなるよう傾斜させた構造とし、上
記蓋押圧部材を、サセプタ上を摺動可能に配設された支
持フレームと、該支持フレームの、上記結晶成長用ボー
トの前方側一端に回転自在に支持され、上記蓋部材を融
液収納部側に押さえつける押え板とから構成したもので
ある。According to the present invention, in the above crystal growth apparatus,
The crystal growth boat, a structure in which the upper opening surface of the melt storage portion is inclined so that the boat front side is low, the lid pressing member, a support frame slidably disposed on the susceptor, The holding frame is rotatably supported at one end on the front side of the crystal growth boat, and includes a holding plate for pressing the lid member toward the melt containing portion.
【００１１】この発明に係る結晶成長方法は、前方側に
基板収納部、後方側に融液収納部を有する結晶成長用ボ
ートを用いて基板の結晶成長を行う結晶成長方法におい
て、上記基板収納部及び融液収納部の開口を塞ぐ蓋部材
を蓋押圧部材により収納部側に付勢してその内部を密閉
するとともに、結晶成長用ボートの移動の際には、蓋押
圧部材の付勢を解除するようにしたものである。The crystal growth method according to the present invention is the crystal growth method for growing a crystal of a substrate by using a crystal growth boat having a substrate storage portion on the front side and a melt storage portion on the rear side. And the lid member that closes the opening of the melt containing portion is urged toward the containing portion by the lid pressing member to seal the inside, and the urging of the lid pressing member is released when the crystal growth boat is moved. It was done.
【００１２】[0012]
【作用】この発明においては、結晶成長用ボートの基板
収納部及び融液収容部の開口を塞ぐ蓋部材を押圧付勢す
る蓋押圧部材を設けたから、結晶成長の際、上記基板収
納部及び融液収納部内の気密性を高めることが可能とな
り、これにより結晶成長用融液中のＨｇの蒸発が防止さ
れ、均質なＣＭＴの結晶成長が可能となる。In the present invention, since the lid pressing member for pressing the lid member that closes the openings of the substrate accommodating portion and the melt accommodating portion of the crystal growth boat is provided, during the crystal growth, the substrate accommodating portion and the melting portion are melted. It is possible to increase the airtightness in the liquid storage portion, which prevents evaporation of Hg in the melt for crystal growth and enables uniform CMT crystal growth.
【００１３】この発明は、上記結晶成長装置において
は、上記結晶成長用ボートを、上記融液収納部の上面開
口面がボート前方側が低くなるよう傾斜させた構造と
し、上記蓋押圧部材を、サセプタ上を摺動可能に配設さ
れた支持フレームと、該支持フレームの、上記結晶成長
用ボートの前方側一端に回転自在に支持され、上記蓋部
材を融液収納部側に押さえつける押え板とから構成した
ので、上記押え板をボート移動方向と並行な方向，つま
り水平方向に引っ張ったり押したりすることにより、上
記各収容部の密閉が可能となり、蓋押圧部材を動かすた
めの機構が簡単になる。According to the present invention, in the above-described crystal growth apparatus, the boat for crystal growth has a structure in which the opening surface of the upper surface of the melt storage portion is inclined so that the front side of the boat is lower, and the lid pressing member is the susceptor. A support frame slidably disposed on the upper side, and a holding plate rotatably supported at one end of the support frame on the front side of the boat for crystal growth and pressing the lid member toward the melt storage portion side. Since it is configured, by pulling or pushing the pressing plate in a direction parallel to the boat moving direction, that is, in the horizontal direction, it is possible to seal each of the accommodating portions, and the mechanism for moving the lid pressing member is simplified. ..
【００１４】この発明に係る結晶成長方法は、前方側に
基板収納部、後方側に融液収納部を有する結晶成長用ボ
ートを用いて基板の結晶成長を行う結晶成長方法におい
て、上記基板収納部及び融液収納部の開口を塞ぐ蓋部材
を蓋押圧部材により収納部側に付勢してその内部を密閉
するとともに、結晶成長用ボートの移動の際には、蓋押
圧部材の付勢を解除するようにしたので、結晶成長の
際、上記基板収納部及び融液収納部内の気密性を高める
ことができ、これにより結晶成長用融液中のＨｇの蒸発
が防止され、均質なＣＭＴの結晶成長を行うことができ
る。The crystal growth method according to the present invention is the crystal growth method for growing a crystal of a substrate by using a crystal growth boat having a substrate storage portion on the front side and a melt storage portion on the rear side. And the lid member that closes the opening of the melt containing portion is urged toward the containing portion by the lid pressing member to seal the inside, and the urging of the lid pressing member is released when the crystal growth boat is moved. Therefore, during the crystal growth, the airtightness in the substrate accommodating portion and the melt accommodating portion can be enhanced, whereby the evaporation of Hg in the crystal growth melt can be prevented and a homogeneous CMT crystal can be obtained. You can grow.
【００１５】[0015]
【実施例】以下、この発明の一実施例を図について説明
する。図１はこの発明の一実施例による結晶成長装置を
示す断面図であり、図において、図３と同符号のものは
同一のものを示す。７は蓋部材６を融液収納部３及び基
板収納部５側に押さえ付けるための押え板、８はサセプ
タ１上の一端に取付けられ、上記押え板７を回転自在に
支持する支持棒、９は支持棒８の回転軸である。上記１
〜１０および１４により結晶成長装置３０が構成されて
いる。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. 1 is a sectional view showing a crystal growth apparatus according to an embodiment of the present invention. In the figure, the same reference numerals as those in FIG. 3 denote the same elements. Reference numeral 7 denotes a holding plate for pressing the lid member 6 toward the melt storage portion 3 and the substrate storage portion 5 side, 8 a support rod attached to one end of the susceptor 1 for rotatably supporting the holding plate 7, 9 Is the rotation axis of the support rod 8. 1 above
A crystal growth apparatus 30 is constituted by 10 to 14.
【００１６】次に結晶成長方法について説明する。ここ
で、融液４及びＣｄＴｅ基板２の収納及び蓋部材６の設
置は、従来例通り行う。蓋部材６を設置した後、図１の
Ａに示す方向へ押え板７に力を加えて、蓋部材６と押え
板７との間に少しすき間を設ける。この状態で、結晶成
長用ボートをＮ2 またはＨ2 ガス雰囲気に暴露し、ある
いは真空状態に置くことにより、融液収納部３及び基板
収納部５の内部はこれらと蓋部材６との間のわずかなす
き間１０を通してガスの置換が行われ、融液４及び基板
２の周囲の雰囲気をＮ2 またはＨ2 で満たされた状態も
しくは真空状態にすることができる。Next, the crystal growth method will be described. Here, the storage of the melt 4 and the CdTe substrate 2 and the installation of the lid member 6 are performed as in the conventional example. After the lid member 6 is installed, a force is applied to the pressing plate 7 in the direction indicated by A in FIG. 1 to provide a slight gap between the lid member 6 and the pressing plate 7. In this state, the crystal growth boat is exposed to a N 2 or H 2 gas atmosphere or placed in a vacuum state so that the interiors of the melt storage unit 3 and the substrate storage unit 5 are located between them and the lid member 6. The gas is replaced through a slight gap 10 so that the atmosphere around the melt 4 and the substrate 2 can be filled with N 2 or H 2 or in a vacuum state.
【００１７】次に回転軸９を中心にＢ方向に押え板７に
力を加え、蓋部材６を押さえつけることにより、融液収
納部３及び基板収納部５を密閉状態にする。この状態で
高温に加熱，保持して、融液４中のＨｇを蒸発させるこ
となく、融液４内の成分を均質化する。Next, a force is applied to the pressing plate 7 in the direction B around the rotary shaft 9 to press the lid member 6 to close the melt storage unit 3 and the substrate storage unit 5. In this state, the components in the melt 4 are homogenized by heating and holding at a high temperature without evaporating Hg in the melt 4.
【００１８】上記融液４内の成分の均質化が終了すれ
ば、図１(b) に示すように、押え板７にＡ方向の力を加
え、融液収納部３がＣｄＴｅ基板２上にくるよう引張り
棒１４を押してサセプタ１上で結晶成長用ボートを摺動
させ、融液４とＣｄＴｅ基板２とを接触させる。When the homogenization of the components in the melt 4 is completed, as shown in FIG. 1 (b), a force in the direction A is applied to the holding plate 7 so that the melt containing portion 3 is placed on the CdTe substrate 2. The pulling rod 14 is pushed so as to bend the crystal growth boat on the susceptor 1, and the melt 4 and the CdTe substrate 2 are brought into contact with each other.
【００１９】その後押え板７に図１のＢ方向に力を加え
て、押え板７で蓋部材６を押さえ付け、融液収納部３を
密閉状態とする。なお、上記密閉状態が解除されている
期間におけるＨｇの蒸発を防止するため、この期間をで
きるだけ短くする必要がある。After that, a force is applied to the pressing plate 7 in the direction B in FIG. 1 to press the lid member 6 with the pressing plate 7 to bring the melt storage portion 3 into a sealed state. It is necessary to shorten this period as much as possible in order to prevent evaporation of Hg during the period in which the sealed state is released.
【００２０】図１(b) のＢ方向に力が印加した状態で、
０．５℃／分の速度で装置を３０分間徐冷することによ
り、厚み約３０μｍの均質な組成のＣＭＴ結晶をＣｄＴ
ｅ基板２上に成長させることができる。With a force applied in the direction B of FIG. 1 (b),
By slowly cooling the device at a rate of 0.5 ° C./minute for 30 minutes, a CMT crystal with a uniform composition having a thickness of about 30 μm was obtained.
e can be grown on the substrate 2.
【００２１】次に、図１のＡ方向に力を加えながら引張
り棒１４をＣの方向に引っ張り、融液収納部３をサセプ
タ１上で摺動させ、図１(a) の状態に戻し、融液４を基
板２から分離させて結晶成長を終了する。さらに図１の
Ｂ方向に力を加えて基板収納部５を密閉状態にして冷却
することにより、冷却期間中のＣＭＴ結晶からのＨｇの
蒸発が防止でき、均質なＣＭＴ結晶が得られる。Next, while pulling the pull rod 14 in the direction C while applying a force in the direction A of FIG. 1, the melt storage portion 3 is slid on the susceptor 1 to return to the state of FIG. 1 (a). The melt 4 is separated from the substrate 2 to complete the crystal growth. Further, by applying a force in the B direction in FIG. 1 to cool the substrate housing portion 5 in a sealed state, Hg can be prevented from evaporating from the CMT crystal during the cooling period, and a homogeneous CMT crystal can be obtained.
【００２２】上記の状態で充分冷却した後、Ａ方向に力
を加えながら引張り棒１４を引っ張って基板収納部５を
サセプタ１上でＣ方向に摺動させることにより、ＣＭＴ
結晶を外部に取り出すことができる。After sufficiently cooling in the above-mentioned state, the tension bar 14 is pulled while applying a force in the A direction to slide the substrate housing portion 5 on the susceptor 1 in the C direction.
The crystal can be taken out.
【００２３】このように上記実施例によれば、蓋部材６
を各収容部側に付勢する蓋押圧部材を、サセプタ１上に
設けられた支持体と、該支持体に回転自在に支持される
押え板７とから構成し、この押さえ板７により蓋部材６
を押さえることにより、基板収容部５及び融液収納部３
をほぼ密閉可能としたので、蓋部材６を、その上部に設
けられた押え板７で下方に押さえつけることにより、基
板収納部５及び融液収納部３が密閉された状態のまま
で、高温に加熱して融液４の均質化，結晶成長を行うこ
とができる。これにより高温において解離しやすいＨｇ
のような元素の蒸発が防止でき、また、冷却期間中も密
閉状態を保つことができ、均質な化合物半導体結晶を得
ることができる。Thus, according to the above embodiment, the lid member 6
The lid pressing member for urging the holding member toward each accommodation portion is composed of a support body provided on the susceptor 1 and a holding plate 7 rotatably supported by the support body. 6
By pressing down, the substrate containing portion 5 and the melt containing portion 3
Since the lid member 6 can be almost sealed, the lid member 6 is pressed downward by the holding plate 7 provided on the upper portion of the lid member 6, so that the substrate storage portion 5 and the melt storage portion 3 are kept in a sealed state and the temperature is kept high. The melt 4 can be heated for homogenization and crystal growth. This makes it easy to dissociate at high temperatures.
Such elements can be prevented from evaporating, and the hermetically sealed state can be maintained even during the cooling period, so that a homogeneous compound semiconductor crystal can be obtained.
【００２４】次にこの発明の第２の実施例について説明
する。図２はこの発明の第２の実施例による結晶成長装
置を示した断面図であり、図において、図１と同符号の
ものは同一のものを示す。ここでは結晶成長用ボート
は、上記基板収納部５及び融液収納部３の上面開口面が
ボート前方側が低くなるよう傾斜させた構造とし、また
上記蓋押圧部材は、サセプタ１上を慴動可能に配設され
た支持フレーム１５と、該支持フレーム１５の、上記結
晶成長用ボートの前方側一端に回転軸９により回転自在
に支持され、上記蓋部材６を融液収納部３側に押さえつ
ける押え板７と、該押え板７の他端側に回転軸１２によ
り回転自在に取りつけられた引張り板１１から構成して
いる。また１３は上記サセプタ１の、上記結晶成長用ボ
ート前方側の一端に取付けられたストッパで、支持フレ
ーム１５の動きを止めるものである。またこの支持フレ
ーム１５はサセプタ１と密着した状態でボートの摺動方
向と同一方向に摺動可能な構造となっている。Next, a second embodiment of the present invention will be described. 2 is a sectional view showing a crystal growth apparatus according to a second embodiment of the present invention. In the figure, the same reference numerals as those in FIG. 1 indicate the same elements. Here, the crystal growth boat has a structure in which the upper surface opening surfaces of the substrate storage portion 5 and the melt storage portion 3 are inclined so that the front side of the boat is lowered, and the lid pressing member is slidable on the susceptor 1. And a support frame 15 rotatably supported at one end of the support frame 15 on the front side of the boat for crystal growth by a rotation shaft 9 and pressing the lid member 6 toward the melt storage portion 3 side. It is composed of a plate 7 and a tension plate 11 rotatably attached to the other end side of the pressing plate 7 by a rotary shaft 12. Reference numeral 13 is a stopper attached to one end of the susceptor 1 on the front side of the crystal growth boat, which stops the movement of the support frame 15. Further, the support frame 15 has a structure capable of sliding in the same direction as the sliding direction of the boat while being in close contact with the susceptor 1.
【００２５】次に動作について説明する。上記各収納部
を密閉するために、蓋部材６を押え板７でＢ方向に押さ
えつける場合には、図２(a) に示すように引張り板１１
をＥ方向に引く。また、融液収納部３を融液４が基板２
上に接触するよう配置する場合には、引張り棒１４と支
持フレーム１５とを同時にＤ方向に押して、支持フレー
ム１５をストッパ１３の位置まで摺動させる。このよう
にして、図２(b) に示すように、融液４を基板２に接触
させることができ、この状態で引張り板１１をＥ方向に
引くことにより、融液収納部３を密閉状態にすることが
できる。また、得られたＣＭＴ結晶を外部に取り出す際
は、上記の逆の操作をすることによって可能となる。そ
の他の操作は上記実施例と同様である。Next, the operation will be described. When the lid member 6 is pressed in the direction B by the pressing plate 7 in order to hermetically close each of the storage parts, as shown in FIG.
In the E direction. Further, the melt 4 is stored in the melt storage unit 3 by the substrate 2.
In the case of arranging them so as to contact with each other, the pull rod 14 and the support frame 15 are simultaneously pushed in the D direction to slide the support frame 15 to the position of the stopper 13. In this way, as shown in FIG. 2 (b), the melt 4 can be brought into contact with the substrate 2, and in this state, the pulling plate 11 is pulled in the E direction to seal the melt containing portion 3 in a sealed state. Can be Further, when the obtained CMT crystal is taken out, it is possible to perform the reverse operation to the above. Other operations are the same as those in the above embodiment.
【００２６】この実施例では、上記結晶成長用ボート
を、上記融液収納部３の上面開口面がボート前方側が低
くなるよう傾斜させた構造とし、上記蓋押圧部材を、サ
セプタ１上を摺動可能に配設された支持フレーム１５
と、該支持フレーム１５の、上記結晶成長用ボートの前
方側一端に回転自在に支持され、上記蓋部材を融液収納
部３側に押さえつける押え板７とから構成したので、上
記押え板７をボート移動方向と並行な方向，つまり水平
方向に引っ張ったり押したりすることにより、上記各収
容部の密閉が可能となり、蓋押圧部材を動かすための機
構が簡単になる。In this embodiment, the boat for crystal growth has a structure in which the upper opening surface of the melt containing portion 3 is inclined so that the front side of the boat is low, and the lid pressing member slides on the susceptor 1. Support frame 15 arranged so that it is possible
And a holding plate 7 that is rotatably supported at one end of the supporting frame 15 on the front side of the boat for crystal growth and presses the lid member toward the melt storage portion 3 side. By pulling or pushing in the direction parallel to the boat moving direction, that is, in the horizontal direction, the above-mentioned housing portions can be sealed and the mechanism for moving the lid pressing member becomes simple.
【００２７】なお、上記第１，第２の実施例における結
晶成長方法では、ＣＭＴ結晶の成長を例にとって説明し
たが、解離しやすい元素を含む任意の化合物半導体の結
晶成長に対しても適用可能である。In the crystal growth methods in the first and second embodiments, the CMT crystal growth is described as an example, but the present invention can also be applied to the crystal growth of any compound semiconductor containing an element that easily dissociates. Is.
【００２８】[0028]
【発明の効果】以上のように本発明に係る結晶成長装置
によれば、結晶成長用ボートの基板収納部及び融液収容
部の開口を塞ぐ蓋部材を押圧付勢する蓋押圧部材を設け
たので、結晶成長の際、上記基板収納部及び融液収納部
内の気密性を高めることが可能となり、これにより結晶
成長用融液中のＨｇの蒸発が防止され、均質なＣＭＴの
結晶成長が可能となる効果がある。As described above, according to the crystal growth apparatus of the present invention, the lid pressing member for pressing the lid member that closes the openings of the substrate accommodating portion and the melt accommodating portion of the crystal growth boat is provided. Therefore, during the crystal growth, it becomes possible to enhance the airtightness in the substrate storage section and the melt storage section, which prevents the evaporation of Hg in the crystal growth melt and enables the uniform CMT crystal growth. There is an effect that becomes.
【００２９】またこの発明によれば、上記結晶成長装置
において、上記結晶成長用ボートを、上記融液収納部の
上面開口面がボート前方側が低くなるよう傾斜させた構
造とし、上記蓋押圧部材を、サセプタ上を慴動可能に配
設された支持フレームと、該支持フレームの、上記結晶
成長用ボートの前方側一端に回転自在に支持され、上記
蓋部材を融液収納部側に押さえつける押え板とから構成
したので、上記押え板をボート移動方向と並行な方向，
つまり水平方向に引っ張ったり押したりすることによ
り、上記各収容部の密閉が可能となり、蓋押圧部材を動
かすための機構が簡単になるという効果がある。Further, according to the invention, in the crystal growth apparatus, the crystal growth boat has a structure in which the upper opening surface of the melt storage portion is inclined so that the front side of the boat is lowered, and the lid pressing member is provided. A supporting frame movably arranged on the susceptor, and a holding plate which is rotatably supported by one end of the supporting frame on the front side of the crystal growth boat and presses the lid member toward the melt containing portion side. Since it is composed of and, the above-mentioned holding plate is arranged in a direction parallel to the boat moving direction,
That is, by pulling or pushing in the horizontal direction, it is possible to seal each of the above-mentioned accommodating portions, and there is an effect that the mechanism for moving the lid pressing member becomes simple.
【００３０】さらにこの発明に係る結晶成長方法によれ
ば、前方側に基板収納部、後方側に融液収納部を有する
結晶成長用ボートを用いて基板の結晶成長を行う結晶成
長方法において、上記基板収納部及び融液収納部の開口
を塞ぐ蓋部材を蓋押圧部材により収納部側に付勢してそ
の内部を密閉するとともに、結晶成長用ボートの移動の
際には、蓋押圧部材の付勢を解除するようにしたので、
結晶成長の際、上記基板収納部及び融液収納部内の気密
性を高めることができ、これにより結晶成長用融液中の
Ｈｇの蒸発が防止され、均質なＣＭＴの結晶成長を行う
ことができる効果がある。Further, according to the crystal growth method of the present invention, in the crystal growth method of performing crystal growth of a substrate using a crystal growth boat having a substrate storage portion on the front side and a melt storage portion on the rear side, The lid member that closes the openings of the substrate containing portion and the melt containing portion is urged toward the containing portion by the lid pressing member to seal the inside thereof, and the lid pressing member is attached when the boat for crystal growth is moved. Since I decided to cancel the momentum,
At the time of crystal growth, it is possible to enhance the airtightness in the substrate housing portion and the melt housing portion, which prevents evaporation of Hg in the melt for crystal growth and allows uniform CMT crystal growth. effective.
【図１】この発明の一実施例による結晶成長装置を示し
た断面図である。FIG. 1 is a sectional view showing a crystal growth apparatus according to an embodiment of the present invention.
【図２】この発明の第２の実施例による結晶成長装置を
示した断面図である。FIG. 2 is a sectional view showing a crystal growth apparatus according to a second embodiment of the present invention.
【図３】従来の結晶成長装置を示した断面図である。FIG. 3 is a sectional view showing a conventional crystal growth apparatus.
１ サセプタ ２ 基板 ３ 融液収納部 ４ 融液 ５ 基板収納部 ６ 蓋部材 ７ 押え板 ８ 支持棒 ９ 回転軸 １０ すき間 １１ 引張り板 １２ 回転軸 １３ ストッパ １４ 引張り棒 １５ 支持フレーム 1 Susceptor 2 Substrate 3 Melt Storage Section 4 Melt 5 Substrate Storage Section 6 Lid Member 7 Holding Plate 8 Support Rod 9 Rotating Shaft 10 Gap 11 Pulling Plate 12 Rotating Shaft 13 Stopper 14 Pulling Rod 15 Support Frame
Claims (3)
るサセプタと、上面が開口した、融液を収納するための
融液収納部、及び該融液収納部の開口を塞ぐ蓋部材を有
し、上記サセプタ上を融液収納部に結晶成長用融液を溜
めて移動する結晶成長用ボートとを備え、上記サセプタ
上に載置された基板の結晶成長を行う結晶成長装置にお
いて、 上記蓋部材を上記融液収納部側に押し付けて該融液収納
部内をほぼ密閉状態にすることが可能な蓋押圧部材を備
えたことを特徴とする結晶成長装置。1. A susceptor having a substrate mounting portion for mounting a substrate, a melt storage portion for storing a melt having an open upper surface, and a lid member for closing the opening of the melt storage portion. And having a crystal growth boat that moves by accumulating a crystal growth melt in a melt storage section on the susceptor, and in a crystal growth apparatus for performing crystal growth of a substrate placed on the susceptor, A crystal growth apparatus comprising: a lid pressing member capable of pressing the lid member against the melt containing portion to make the interior of the melt containing portion substantially sealed.
がボート前方側が低くなるよう傾斜させたものであり、 上記蓋押圧部材は、サセプタ上を摺動可能に配設された
支持フレームと、該支持フレームの、上記結晶成長用ボ
ートの前方側一端に回転自在に支持され、上記蓋部材を
融液収納部側に押さえつける押え板とからなることを特
徴とする結晶成長装置。2. The crystal-growing apparatus according to claim 1, wherein the crystal-growing boat is formed by inclining an upper opening surface of the melt storage portion so that the front side of the boat is lowered. A support frame slidably disposed on the susceptor, and a holding plate rotatably supported by one end of the support frame on the front side of the boat for crystal growth, and pressing the lid member toward the melt storage part side. A crystal growth apparatus comprising:
前方側に基板収納部、後方側に融液収納部を有する結晶
成長用ボートを、その基板収納部が上記基板上に位置す
るよう配置し、上記融液収納部内に結晶成長用融液を収
容し、該基板収納部及び融液収納部の上面開口を蓋部材
により塞ぎ、この状態でボートを移動させて結晶成長用
融液を基板上に運び、基板の結晶成長を行う結晶成長方
法において、 上記融液収納部内に結晶成長用融液を充填した後、基板
収納部及び融液収納部の雰囲気を不活性ガスもしくは還
元性ガスで充分置換あるいは真空排気し、その後、蓋押
圧部材により上記蓋部材を融液収納部側に付勢して該融
液収納部内をほぼ密閉状態にし、結晶成長用ボートを加
熱，保持して融液を均質化する工程と、 上記蓋押圧部材による蓋部材の付勢を一旦解除して、上
記結晶成長用ボートをサセプタ上で摺動させて結晶成長
用融液を上記基板に接触させる工程と、 その後上記蓋押圧部材による蓋部材の付勢を行って上記
融液収納部をほぼ密閉状態にし、上記結晶成長用融液を
一定期間徐冷する工程と、 次に上記蓋押圧部材による蓋部材の付勢を一旦解除し、
この状態で上記結晶成長用ボートを摺動させて結晶成長
用融液と基板とを分離した後、上記蓋押圧部材による蓋
部材の付勢を行って、上記基板収納部内をほぼ密閉状態
にして冷却する工程とを含むことを特徴とする結晶成長
方法。3. A substrate is mounted on the substrate mounting portion of the susceptor,
A crystal growth boat having a substrate storage part on the front side and a melt storage part on the rear side is arranged so that the substrate storage part is located on the substrate, and the crystal growth melt is stored in the melt storage part. Then, the upper surface opening of the substrate storage portion and the melt storage portion is closed by a lid member, in this state the boat is moved to carry the crystal growth melt onto the substrate, in the crystal growth method for crystal growth of the substrate, After the melt for crystal growth is filled in the melt containing part, the atmosphere of the substrate containing part and the melt containing part is sufficiently replaced with an inert gas or a reducing gas or evacuated, and then the lid is pressed by the lid pressing member. A step of urging the member toward the melt containing part to make the inside of the melt containing part almost sealed, heating and holding the crystal growth boat to homogenize the melt, and Release the energizing force once and set the above crystal growth bow. Sliding on the susceptor to bring the melt for crystal growth into contact with the substrate, and then urging the lid member by the lid pressing member to bring the melt storage portion into a substantially sealed state, and the crystal growth A step of gradually cooling the melt for a certain period of time, and then once releasing the bias of the lid member by the lid pressing member,
In this state, after sliding the crystal growth boat to separate the crystal growth melt and the substrate, the lid pressing member is urged to make the inside of the substrate storage unit almost sealed. And a step of cooling the crystal growth method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28212791A JPH0585887A (en) | 1991-09-30 | 1991-09-30 | Apparatus for growing crystal and method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28212791A JPH0585887A (en) | 1991-09-30 | 1991-09-30 | Apparatus for growing crystal and method therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0585887A true JPH0585887A (en) | 1993-04-06 |
Family
ID=17648475
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28212791A Pending JPH0585887A (en) | 1991-09-30 | 1991-09-30 | Apparatus for growing crystal and method therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0585887A (en) |
-
1991
- 1991-09-30 JP JP28212791A patent/JPH0585887A/en active Pending
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