JPS5773940A - Levelling method of insulation layer - Google Patents
Levelling method of insulation layerInfo
- Publication number
- JPS5773940A JPS5773940A JP15017980A JP15017980A JPS5773940A JP S5773940 A JPS5773940 A JP S5773940A JP 15017980 A JP15017980 A JP 15017980A JP 15017980 A JP15017980 A JP 15017980A JP S5773940 A JPS5773940 A JP S5773940A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- films
- etching
- constitution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009413 insulation Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 238000005530 etching Methods 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 150000004767 nitrides Chemical class 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000010276 construction Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
- H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15017980A JPS5773940A (en) | 1980-10-28 | 1980-10-28 | Levelling method of insulation layer |
DE8181107369T DE3164742D1 (en) | 1980-09-22 | 1981-09-17 | Method of smoothing an insulating layer formed on a semiconductor body |
EP81107369A EP0049400B1 (en) | 1980-09-22 | 1981-09-17 | Method of smoothing an insulating layer formed on a semiconductor body |
US06/304,677 US4377438A (en) | 1980-09-22 | 1981-09-22 | Method for producing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15017980A JPS5773940A (en) | 1980-10-28 | 1980-10-28 | Levelling method of insulation layer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5773940A true JPS5773940A (en) | 1982-05-08 |
Family
ID=15491225
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15017980A Pending JPS5773940A (en) | 1980-09-22 | 1980-10-28 | Levelling method of insulation layer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5773940A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59191354A (ja) * | 1983-04-14 | 1984-10-30 | Nec Corp | 半導体装置の製造方法 |
JPS6110240A (ja) * | 1984-06-20 | 1986-01-17 | Yokogawa Hewlett Packard Ltd | 半導体素子の製造方法 |
US4587549A (en) * | 1982-06-04 | 1986-05-06 | Tokyo Shibaura Denki Kabushiki Kaisha | Multilayer interconnection structure for semiconductor device |
-
1980
- 1980-10-28 JP JP15017980A patent/JPS5773940A/ja active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4587549A (en) * | 1982-06-04 | 1986-05-06 | Tokyo Shibaura Denki Kabushiki Kaisha | Multilayer interconnection structure for semiconductor device |
JPS59191354A (ja) * | 1983-04-14 | 1984-10-30 | Nec Corp | 半導体装置の製造方法 |
JPH0226783B2 (ja) * | 1983-04-14 | 1990-06-12 | Nippon Electric Co | |
JPS6110240A (ja) * | 1984-06-20 | 1986-01-17 | Yokogawa Hewlett Packard Ltd | 半導体素子の製造方法 |
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