JPS5643764A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5643764A JPS5643764A JP11980779A JP11980779A JPS5643764A JP S5643764 A JPS5643764 A JP S5643764A JP 11980779 A JP11980779 A JP 11980779A JP 11980779 A JP11980779 A JP 11980779A JP S5643764 A JPS5643764 A JP S5643764A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- thickness
- contact hole
- resist
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title 1
- 238000005530 etching Methods 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To improve yield in case of production by a method wherein insulating films are formed in steps that are divided at least twice, contact holes are formed every formation, and the disconnection of metallic wiring is prevented by the difference in level. CONSTITUTION:A silicon oxide film 6 is deposited on a surface of substrate silicon 5 by means of a CVD method. The thickness of the oxide film at that time is made approximate half of the thickness of the final oxide film. A resist film 7 is formed for etching a contact hole, the desired pattern in made up, and the contact hole is etched first. All the resist film 7 is removed after etching, and an oxide film 8 is built up again on the whole surface in the same manner as the preceding time. The sum of the oxide film 7, 8 is made the thickness of an oxide film finally necessary for the protection of the surface. A contact hole is etched and the resist is exfoliated in the same manner as mentioned above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11980779A JPS5643764A (en) | 1979-09-18 | 1979-09-18 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11980779A JPS5643764A (en) | 1979-09-18 | 1979-09-18 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5643764A true JPS5643764A (en) | 1981-04-22 |
Family
ID=14770704
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11980779A Pending JPS5643764A (en) | 1979-09-18 | 1979-09-18 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5643764A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS601846A (en) * | 1983-06-18 | 1985-01-08 | Toshiba Corp | Multilayer interconnection structure semiconductor device and manufacture thereof |
-
1979
- 1979-09-18 JP JP11980779A patent/JPS5643764A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS601846A (en) * | 1983-06-18 | 1985-01-08 | Toshiba Corp | Multilayer interconnection structure semiconductor device and manufacture thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0304077A3 (en) | Method of forming a fine pattern | |
| EP0178181A3 (en) | Methods for producing an aperture in a surface | |
| JPS5643764A (en) | Manufacture of semiconductor device | |
| JPS57145340A (en) | Manufacture of semiconductor device | |
| JPS5764927A (en) | Manufacture of semiconductor device | |
| JPS6459936A (en) | Manufacture of integrated circuit | |
| JPS57176742A (en) | Semiconductor device and manufacture thereof | |
| JPS5710249A (en) | Manufacture of semiconductor device | |
| JPS6430228A (en) | Manufacture of semiconductor device | |
| JPS56130925A (en) | Manufacture of semiconductor device | |
| JPS57167656A (en) | Manufacture of semiconductor device | |
| JPS6473718A (en) | Manufacture of semiconductor integrated circuit device | |
| JPS56165339A (en) | Semiconductor device | |
| JPS553686A (en) | Preparation of semiconductor device | |
| JPS55130140A (en) | Fabricating method of semiconductor device | |
| JPS5599777A (en) | Manufacture of semiconductor device | |
| JPS5797643A (en) | Manufacture of semiconductor device | |
| JPS5754346A (en) | Formation of polycrystalline silicon wiring layer | |
| JPS5637674A (en) | Manufacture of semiconductor device | |
| JPS571243A (en) | Manufacture of semiconductor device | |
| JPS57130418A (en) | Manufacture of semiconductor device | |
| JPS56134733A (en) | Production of semiconductor | |
| JPS572545A (en) | Manufacture of semiconductor device | |
| JPS5732653A (en) | Manufacture of semiconductor device | |
| JPS55138253A (en) | Semiconductor device |