JPS56129698A - Crystal growing method - Google Patents

Crystal growing method

Info

Publication number
JPS56129698A
JPS56129698A JP3143480A JP3143480A JPS56129698A JP S56129698 A JPS56129698 A JP S56129698A JP 3143480 A JP3143480 A JP 3143480A JP 3143480 A JP3143480 A JP 3143480A JP S56129698 A JPS56129698 A JP S56129698A
Authority
JP
Japan
Prior art keywords
layer
substrate
strain
epitaxial layer
back side
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3143480A
Other languages
Japanese (ja)
Other versions
JPS6348839B2 (en
Inventor
Yukinobu Tanno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3143480A priority Critical patent/JPS56129698A/en
Publication of JPS56129698A publication Critical patent/JPS56129698A/en
Publication of JPS6348839B2 publication Critical patent/JPS6348839B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To prevent an epitaxial layer from being warped as well as considerably reduce the occurrence of minute defects by forming a specified strain layer on the back side of a substrate before growing the epitaxial layer and coating the strain layer with an Si3N4 film of a specified thickness.
CONSTITUTION: In a method of forming an epitaxial layer on a substrate under reduced pressure, in advance of growing the layer, a strain layer is formed on the back side of the substrate so that the defect density of an oxidized lamination layer formed by wet oxidizing the substrate is adjusted to ≥105/cm2. A silicon nitride film of ≤1,500Å thickness is further formed so as to coat the strain layer. Thus, the yield of devices can be increased.
COPYRIGHT: (C)1981,JPO&Japio
JP3143480A 1980-03-11 1980-03-11 Crystal growing method Granted JPS56129698A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3143480A JPS56129698A (en) 1980-03-11 1980-03-11 Crystal growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3143480A JPS56129698A (en) 1980-03-11 1980-03-11 Crystal growing method

Publications (2)

Publication Number Publication Date
JPS56129698A true JPS56129698A (en) 1981-10-09
JPS6348839B2 JPS6348839B2 (en) 1988-09-30

Family

ID=12331121

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3143480A Granted JPS56129698A (en) 1980-03-11 1980-03-11 Crystal growing method

Country Status (1)

Country Link
JP (1) JPS56129698A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03116820A (en) * 1989-09-29 1991-05-17 Shin Etsu Handotai Co Ltd Misfit transposition control method
US5913130A (en) * 1996-06-12 1999-06-15 Harris Corporation Method for fabricating a power device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03116820A (en) * 1989-09-29 1991-05-17 Shin Etsu Handotai Co Ltd Misfit transposition control method
US5913130A (en) * 1996-06-12 1999-06-15 Harris Corporation Method for fabricating a power device
US6078077A (en) * 1996-06-12 2000-06-20 Intersil Corporation Power device
US6236083B1 (en) 1996-06-12 2001-05-22 Intersil Corporation Power device

Also Published As

Publication number Publication date
JPS6348839B2 (en) 1988-09-30

Similar Documents

Publication Publication Date Title
MY113505A (en) Semiconductor substrate and process for production thereof
JPS54589A (en) Burying method of insulator
JPS56129698A (en) Crystal growing method
JPS575328A (en) Growing method for semiconductor crystal
JPS56162855A (en) Forming method for insulator region
JPS57211737A (en) Manufacture of semiconductor substrate
JPS5773940A (en) Levelling method of insulation layer
JPS571243A (en) Manufacture of semiconductor device
JPS5381069A (en) Production of susceptor in cvd device
JPS5317068A (en) Semiconductor device and its production
JPS5776865A (en) Manufacture of semiconductor device
JPS5754346A (en) Formation of polycrystalline silicon wiring layer
JPS57170548A (en) Semiconductor device and manufacture thereof
JPS5377463A (en) Production of semiconductor device
JPS57170539A (en) Manufacture of semiconductor device
JPS5511347A (en) Manufacture of dielectric insulated separation substrate
JPS5419681A (en) Dielectric isolating substrate and production of the same
JPS5656639A (en) Manufacture of semiconductor device
JPS559415A (en) Semiconductor manufacturing method
JPS645011A (en) Forming method for semiconductor film
JPS54158172A (en) Manufacture of semiconductor device
JPS5516413A (en) Production of semiconductor device
JPS56144552A (en) Semiconductor substrate
JPS54150074A (en) Manufacture of semiconductor device
JPS5797646A (en) Manufacture of semiconductor device