JPS56129698A - Crystal growing method - Google Patents
Crystal growing methodInfo
- Publication number
- JPS56129698A JPS56129698A JP3143480A JP3143480A JPS56129698A JP S56129698 A JPS56129698 A JP S56129698A JP 3143480 A JP3143480 A JP 3143480A JP 3143480 A JP3143480 A JP 3143480A JP S56129698 A JPS56129698 A JP S56129698A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- strain
- epitaxial layer
- back side
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To prevent an epitaxial layer from being warped as well as considerably reduce the occurrence of minute defects by forming a specified strain layer on the back side of a substrate before growing the epitaxial layer and coating the strain layer with an Si3N4 film of a specified thickness.
CONSTITUTION: In a method of forming an epitaxial layer on a substrate under reduced pressure, in advance of growing the layer, a strain layer is formed on the back side of the substrate so that the defect density of an oxidized lamination layer formed by wet oxidizing the substrate is adjusted to ≥105/cm2. A silicon nitride film of ≤1,500Å thickness is further formed so as to coat the strain layer. Thus, the yield of devices can be increased.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3143480A JPS56129698A (en) | 1980-03-11 | 1980-03-11 | Crystal growing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3143480A JPS56129698A (en) | 1980-03-11 | 1980-03-11 | Crystal growing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56129698A true JPS56129698A (en) | 1981-10-09 |
JPS6348839B2 JPS6348839B2 (en) | 1988-09-30 |
Family
ID=12331121
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3143480A Granted JPS56129698A (en) | 1980-03-11 | 1980-03-11 | Crystal growing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56129698A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03116820A (en) * | 1989-09-29 | 1991-05-17 | Shin Etsu Handotai Co Ltd | Misfit transposition control method |
US5913130A (en) * | 1996-06-12 | 1999-06-15 | Harris Corporation | Method for fabricating a power device |
-
1980
- 1980-03-11 JP JP3143480A patent/JPS56129698A/en active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03116820A (en) * | 1989-09-29 | 1991-05-17 | Shin Etsu Handotai Co Ltd | Misfit transposition control method |
US5913130A (en) * | 1996-06-12 | 1999-06-15 | Harris Corporation | Method for fabricating a power device |
US6078077A (en) * | 1996-06-12 | 2000-06-20 | Intersil Corporation | Power device |
US6236083B1 (en) | 1996-06-12 | 2001-05-22 | Intersil Corporation | Power device |
Also Published As
Publication number | Publication date |
---|---|
JPS6348839B2 (en) | 1988-09-30 |
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