JPS5771127A - Manufacture of semiamorphous semiconductor - Google Patents

Manufacture of semiamorphous semiconductor

Info

Publication number
JPS5771127A
JPS5771127A JP55147304A JP14730480A JPS5771127A JP S5771127 A JPS5771127 A JP S5771127A JP 55147304 A JP55147304 A JP 55147304A JP 14730480 A JP14730480 A JP 14730480A JP S5771127 A JPS5771127 A JP S5771127A
Authority
JP
Japan
Prior art keywords
gas
substrate
mass
reacted
furnace
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55147304A
Other languages
Japanese (ja)
Other versions
JPH0313737B2 (en
Inventor
Shunpei Yamazaki
Yujiro Nagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Original Assignee
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HANDOUTAI ENERUGII KENKYUSHO KK, Semiconductor Energy Laboratory Co Ltd filed Critical HANDOUTAI ENERUGII KENKYUSHO KK
Priority to JP55147304A priority Critical patent/JPS5771127A/en
Publication of JPS5771127A publication Critical patent/JPS5771127A/en
Publication of JPH0313737B2 publication Critical patent/JPH0313737B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

PURPOSE:To obtain an improved novel semiamorphous semiconductor by a system wherein a density is maintained 10% or less by diluting silicide gas or Ga substance gas with He or Ne and a reactive gas is caused to be reacted into crystallization by addition of inductive energy of 50 through 2,000W to a reaction system. CONSTITUTION:A substrate 10 is heated in a furnace 8 at 100 to 600 deg.C from the external of a reaction tube, a high frequency of 50 to 2,000W is applied to electrodes 3 at the both sides of the furnace 8 and inductive energy 9 is provided for the electrodes by a coupling means of capacitors. The density is maintained 10% or less by weakening silicide or Ga gas with H2 or the like. In this case, glow discharge is given to polymerized silicon or the like, which is spaced from the substrate and reacted into crystalization as a mass during sputtering. The mass forms intercoupling means between the substrate and the loose atoms and is covered as a semicrystallized mass or pillar cluster. The generation layer is not a polycrystal, a single crystal or amorphous semiconductor layer, but an intermediate semiconductor and has an electric property suitable for a photoelectric transducer.
JP55147304A 1980-10-21 1980-10-21 Manufacture of semiamorphous semiconductor Granted JPS5771127A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55147304A JPS5771127A (en) 1980-10-21 1980-10-21 Manufacture of semiamorphous semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55147304A JPS5771127A (en) 1980-10-21 1980-10-21 Manufacture of semiamorphous semiconductor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP58052264A Division JPS58175824A (en) 1983-03-28 1983-03-28 Device for plasma vapor phase reaction

Publications (2)

Publication Number Publication Date
JPS5771127A true JPS5771127A (en) 1982-05-01
JPH0313737B2 JPH0313737B2 (en) 1991-02-25

Family

ID=15427163

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55147304A Granted JPS5771127A (en) 1980-10-21 1980-10-21 Manufacture of semiamorphous semiconductor

Country Status (1)

Country Link
JP (1) JPS5771127A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57187935A (en) * 1981-05-15 1982-11-18 Agency Of Ind Science & Technol Forming of fine crystalline amorphous silicon film
JPS59179151A (en) * 1983-03-30 1984-10-11 Mitsui Toatsu Chem Inc Production of amorphous thin film
JPH0620952A (en) * 1983-03-28 1994-01-28 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor film containing silicon as main ingredient
JP2008179466A (en) * 2007-01-26 2008-08-07 Ss Pharmaceut Co Ltd Tablet carrying device

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
APPL.PHYS.LETT=1980 *
J.NON-CRYST.SOLIDS=1979 *
JAPAN.J.APPL.PHYS=1980 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57187935A (en) * 1981-05-15 1982-11-18 Agency Of Ind Science & Technol Forming of fine crystalline amorphous silicon film
JPS6041453B2 (en) * 1981-05-15 1985-09-17 工業技術院長 Method for producing microcrystalline amorphous silicon film
JPH0620952A (en) * 1983-03-28 1994-01-28 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor film containing silicon as main ingredient
JPS59179151A (en) * 1983-03-30 1984-10-11 Mitsui Toatsu Chem Inc Production of amorphous thin film
JP2008179466A (en) * 2007-01-26 2008-08-07 Ss Pharmaceut Co Ltd Tablet carrying device

Also Published As

Publication number Publication date
JPH0313737B2 (en) 1991-02-25

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