JPS5799732A - Semi-amorphous semiconductor - Google Patents

Semi-amorphous semiconductor

Info

Publication number
JPS5799732A
JPS5799732A JP56167583A JP16758381A JPS5799732A JP S5799732 A JPS5799732 A JP S5799732A JP 56167583 A JP56167583 A JP 56167583A JP 16758381 A JP16758381 A JP 16758381A JP S5799732 A JPS5799732 A JP S5799732A
Authority
JP
Japan
Prior art keywords
type
film
added
semi
photoelectric conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56167583A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP56167583A priority Critical patent/JPS5799732A/en
Publication of JPS5799732A publication Critical patent/JPS5799732A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

PURPOSE:To perform transformation into a material suitable for a photoelectric conversion device by a method wherein a conduction type is set by a P type or N type impurity of a specific quantity added into a semiconductor which was changed into an intermediate stable structure between an amorphous structure and a crystal, and an energy band is widen by addition of nitrogen, etc. CONSTITUTION:By an Si film fabricated at a temperature of or below 700 deg.C by for example SiH4 decomposed in a glow discharge, and anneald in H2 or He by plasma, an Si film of a semi-amorphous structure which has a stable free energy is formed. An impurity of B2H6 etc. having III valence or PH5 etc. having V valence of or below 5mol% is added into this reaction gas. By this method, transformation into a P type or N type film having high conductivity is possible. And by addition of N, O, or C into the film through introduction of NH3, O2 or CH4 into reaction gas, an energy band can be made to be 1.6-3.0cV in accordance with this added quantity. By this method, fabrication of a device having a high photoelectric conversion efficiency can be obtained.
JP56167583A 1981-10-20 1981-10-20 Semi-amorphous semiconductor Pending JPS5799732A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56167583A JPS5799732A (en) 1981-10-20 1981-10-20 Semi-amorphous semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56167583A JPS5799732A (en) 1981-10-20 1981-10-20 Semi-amorphous semiconductor

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2638880A Division JPS56122123A (en) 1980-03-03 1980-03-03 Semiamorphous semiconductor

Publications (1)

Publication Number Publication Date
JPS5799732A true JPS5799732A (en) 1982-06-21

Family

ID=15852435

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56167583A Pending JPS5799732A (en) 1981-10-20 1981-10-20 Semi-amorphous semiconductor

Country Status (1)

Country Link
JP (1) JPS5799732A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6442120A (en) * 1987-07-27 1989-02-14 Energy Conversion Devices Inc Manufacture of n-type and p-type fine crystalline semiconductor alloy material
JP2010062536A (en) * 2008-08-05 2010-03-18 Semiconductor Energy Lab Co Ltd Thin film transistor, display device having the thin film transistor, and driving method thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
J.NON-CRYST.SOLIDS=1979 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6442120A (en) * 1987-07-27 1989-02-14 Energy Conversion Devices Inc Manufacture of n-type and p-type fine crystalline semiconductor alloy material
JP2010062536A (en) * 2008-08-05 2010-03-18 Semiconductor Energy Lab Co Ltd Thin film transistor, display device having the thin film transistor, and driving method thereof
US9000441B2 (en) 2008-08-05 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device

Similar Documents

Publication Publication Date Title
JPS56122123A (en) Semiamorphous semiconductor
JPS5529154A (en) Semiconductor device
JPS5513938A (en) Photoelectronic conversion semiconductor device and its manufacturing method
JPS5777021A (en) Manufacture of amorphous silicon
JPS56115573A (en) Photoconductive element
JPS57187972A (en) Manufacture of solar cell
JPS5799732A (en) Semi-amorphous semiconductor
EP0347953A3 (en) Impurity band conduction semiconductor devices
JPS5799731A (en) Manufacture of semi-amorphous semiconductor
JPS571272A (en) Manufacture of amorphous silicon solar cell
JPS5360171A (en) Electrode for silicon substrate and its production
JPS5670675A (en) Manufacture of photoelectric converter
JPS5694677A (en) Manufacture of amorphous semiconductor device
JPS571262A (en) Solar cell
JPS55125635A (en) Semiconductor device
JPS6445115A (en) Manufacture of hydrogen-bonded amorphous silicon carbide film
ES474771A1 (en) Polycrystalline silicon shaped as a thin film for photovoltaic conversion.
JPS57158649A (en) Amorphous silicon photoconductor layer
JPS5267573A (en) Manufacturing device for semiconductor
JPS5267260A (en) Manufacture of iii-v group compounds semiconductor epitaxial laminatio n crystal
JPS5738935A (en) Chemical gaseous phase reactor
JPS56129379A (en) Solid image-pickup element and manufacture
KR870010638A (en) Method of manufacturing metal-insulated semiconductor polycrystalline silicon solar cell
JPS5799728A (en) Semi-amorphous semiconductor
JPS57122446A (en) Copying machine