JPS55149193A - Manufacture of silicon carbide substrate - Google Patents
Manufacture of silicon carbide substrateInfo
- Publication number
- JPS55149193A JPS55149193A JP5612979A JP5612979A JPS55149193A JP S55149193 A JPS55149193 A JP S55149193A JP 5612979 A JP5612979 A JP 5612979A JP 5612979 A JP5612979 A JP 5612979A JP S55149193 A JPS55149193 A JP S55149193A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- sic
- layer
- temp
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
PURPOSE: To manufacture an SiC substrate of high crystal perfectness by forming an SiC seed layer on an Si substrate at the m.p. of Si or below; forming an SiC layer on the seed layer surface freed of the Si substrate; and removing the seed layer.
CONSTITUTION: Reaction tube 22 is evacuated 32 and replaced with H2, and a surface layer of Si substrate 2 whose principal face is (111) face on sample stand 26 is removed by etching with known HCl-H2 mixed gas. The temp. of substrate 2 is set to the m.p. of Si or below, especially 1,100W1,200°C to grow SiC on substrate 2 by a general vapor phase growing method. Thus, Si-3C type SiC mixed layers 4, 16 or 30μm thickness are formed respectively on the surface and side of substrate 2. Feed of starting material gases is then stopped, an atmosphere of H2 alone is formed, and the temp. of stand 26 is raised to about 1,500°C to melt substrate 2. After the melting the temp. is maintained at a fixed temp. of about 1,450W 1,650°C to form single crystal secondary layer 14. Layers 4, 16 as seed layers are removed by etching with molten KOH in an H2 atmosphere to separate single SiC secondary layer 14.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5612979A JPS55149193A (en) | 1979-05-07 | 1979-05-07 | Manufacture of silicon carbide substrate |
| DE3002671A DE3002671C2 (en) | 1979-01-25 | 1980-01-25 | Process for making a silicon carbide substrate |
| US06/369,911 US4582561A (en) | 1979-01-25 | 1982-04-19 | Method for making a silicon carbide substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5612979A JPS55149193A (en) | 1979-05-07 | 1979-05-07 | Manufacture of silicon carbide substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55149193A true JPS55149193A (en) | 1980-11-20 |
| JPS6120516B2 JPS6120516B2 (en) | 1986-05-22 |
Family
ID=13018456
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5612979A Granted JPS55149193A (en) | 1979-01-25 | 1979-05-07 | Manufacture of silicon carbide substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55149193A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05310349A (en) * | 1991-09-16 | 1993-11-22 | Textil Mas Fab Dr Ernst Fehrer Ag | Apparatus for applying a fleece band to an endlessly circulating support web |
| JPH07335562A (en) * | 1994-06-10 | 1995-12-22 | Hoya Corp | Method for forming silicon carbide film |
| JP2011151317A (en) * | 2010-01-25 | 2011-08-04 | Toyota Motor Corp | Method of detecting defect of silicon carbide single crystal |
-
1979
- 1979-05-07 JP JP5612979A patent/JPS55149193A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05310349A (en) * | 1991-09-16 | 1993-11-22 | Textil Mas Fab Dr Ernst Fehrer Ag | Apparatus for applying a fleece band to an endlessly circulating support web |
| JPH07335562A (en) * | 1994-06-10 | 1995-12-22 | Hoya Corp | Method for forming silicon carbide film |
| JP2011151317A (en) * | 2010-01-25 | 2011-08-04 | Toyota Motor Corp | Method of detecting defect of silicon carbide single crystal |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6120516B2 (en) | 1986-05-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS55149193A (en) | Manufacture of silicon carbide substrate | |
| JPS55104999A (en) | Production of silicon carbide crystal layer | |
| JPS55149195A (en) | Manufacture of silicon carbide substrate | |
| JPS56160400A (en) | Growing method for gallium nitride | |
| JPS54157779A (en) | Production of silicon single crystal | |
| JPS55149192A (en) | Manufacture of silicon carbide crystal layer | |
| JPS55149197A (en) | Manufacture of silicon carbide substrate | |
| JPS55149191A (en) | Manufacture of silicon carbide crystal layer | |
| JPS53108389A (en) | Manufacture for semiconductor device | |
| JPS5645897A (en) | Manufacture of silicon carbide crystal | |
| JPS55149194A (en) | Manufacture of silicon carbide substrate | |
| JPS55149196A (en) | Manufacture of silicon carbide substrate | |
| JPS55105000A (en) | Production of silicon carbide crystal layer | |
| JPS54104488A (en) | Production of silicon carbide crystal layer | |
| JPS55149198A (en) | Manufacture of silicon carbide substrate | |
| JPS53146299A (en) | Production of silicon carbide substrate | |
| JPS5648237A (en) | Evacuated gaseous phase reactor | |
| JPS57205395A (en) | Manufacture of crystal substrate | |
| JPS54152465A (en) | Manufacture of epitaxial wafer | |
| JPS5645896A (en) | Manufacture of silicon carbide crystal | |
| JPS5541725A (en) | Epitaxial crowth method | |
| JPS55116700A (en) | Production of silicon carbide crystal layer | |
| JPS56124228A (en) | Method for low-tension epitaxial growth | |
| JPS55104998A (en) | Production of silicon carbide crystal layer | |
| JPS5524413A (en) | Process of epitaxial growth for semiconductor |