JPS57187935A - Forming of fine crystalline amorphous silicon film - Google Patents

Forming of fine crystalline amorphous silicon film

Info

Publication number
JPS57187935A
JPS57187935A JP56072196A JP7219681A JPS57187935A JP S57187935 A JPS57187935 A JP S57187935A JP 56072196 A JP56072196 A JP 56072196A JP 7219681 A JP7219681 A JP 7219681A JP S57187935 A JPS57187935 A JP S57187935A
Authority
JP
Japan
Prior art keywords
amorphous silicon
silicon film
bomb
fine crystalline
reactive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56072196A
Other languages
Japanese (ja)
Other versions
JPS6041453B2 (en
Inventor
Masakazu Ueno
Yoshiyuki Uchida
Takeshige Ichimura
Yukio Takeda
Osamu Nabeta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP56072196A priority Critical patent/JPS6041453B2/en
Publication of JPS57187935A publication Critical patent/JPS57187935A/en
Publication of JPS6041453B2 publication Critical patent/JPS6041453B2/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

PURPOSE:To obtain a fine crystalline amorphous silicon film without raising the applied voltage for generating a plasma by a method wherein reactive gas containing SiH4 of plasma CVD is diluted by H2. CONSTITUTION:An upper and lower electrodes 2, 3 are arranged oppositely within a reactive tank 1 of plasma CVD equipment and the reactive gas is introduced from an air supply tube 5 to the tank 1 while providing a vacuum exhaust for the reactive tank 1 through the exhaust tube 4. The air supply tube 5 is provided with a mobosilane bomb 6, phosphine bomb 7 and hydrogen bomb 8, connected thereto and the mixing gas of SiH4, PH3, PH3 and H2 is introduced into the interior of the reactive tank 1 by opening valves 9, 10 and 11. A substrate is mounted on the lower electrode 3 and a high frequency voltage of 13.56MHz from the power supply is applied across the upper and lower electrode 2 and 3 while providing a heating by a heater 12.
JP56072196A 1981-05-15 1981-05-15 Method for producing microcrystalline amorphous silicon film Expired JPS6041453B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56072196A JPS6041453B2 (en) 1981-05-15 1981-05-15 Method for producing microcrystalline amorphous silicon film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56072196A JPS6041453B2 (en) 1981-05-15 1981-05-15 Method for producing microcrystalline amorphous silicon film

Publications (2)

Publication Number Publication Date
JPS57187935A true JPS57187935A (en) 1982-11-18
JPS6041453B2 JPS6041453B2 (en) 1985-09-17

Family

ID=13482221

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56072196A Expired JPS6041453B2 (en) 1981-05-15 1981-05-15 Method for producing microcrystalline amorphous silicon film

Country Status (1)

Country Link
JP (1) JPS6041453B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5108936A (en) * 1984-10-02 1992-04-28 Interuniveritair Micro Elektronica Centrum Method of producing a bipolar transistor having an amorphous emitter formed by plasma cvd
US5225378A (en) * 1990-11-16 1993-07-06 Tokyo Electron Limited Method of forming a phosphorus doped silicon film
JPH0758014A (en) * 1993-08-11 1995-03-03 Nec Corp Method for forming silicon thin film

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5771127A (en) * 1980-10-21 1982-05-01 Semiconductor Energy Lab Co Ltd Manufacture of semiamorphous semiconductor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5771127A (en) * 1980-10-21 1982-05-01 Semiconductor Energy Lab Co Ltd Manufacture of semiamorphous semiconductor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5108936A (en) * 1984-10-02 1992-04-28 Interuniveritair Micro Elektronica Centrum Method of producing a bipolar transistor having an amorphous emitter formed by plasma cvd
US5225378A (en) * 1990-11-16 1993-07-06 Tokyo Electron Limited Method of forming a phosphorus doped silicon film
JPH0758014A (en) * 1993-08-11 1995-03-03 Nec Corp Method for forming silicon thin film

Also Published As

Publication number Publication date
JPS6041453B2 (en) 1985-09-17

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