JPS54102295A - Epitaxial crowth method - Google Patents
Epitaxial crowth methodInfo
- Publication number
- JPS54102295A JPS54102295A JP1021078A JP1021078A JPS54102295A JP S54102295 A JPS54102295 A JP S54102295A JP 1021078 A JP1021078 A JP 1021078A JP 1021078 A JP1021078 A JP 1021078A JP S54102295 A JPS54102295 A JP S54102295A
- Authority
- JP
- Japan
- Prior art keywords
- furnace
- valve
- substrate
- pressure
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To rapidly carry out the discharge of impurities from furnace released from the substrate and repressing the auto doping and also, to prevent the decrease of growth velocity of epitaxial layer, by periodically changing the pressure of gas in reaction furnace.
CONSTITUTION: The carrier gas 6, the source gas 7 (for example; SiH4) and the doping gas 8 (for example; AsH4), are induced to the reaction furnace 5 and the substrate 1 composed of Si single crystal having filling layer containing highly concentrated As on the susceptor 4, is heated at a fixed temperature. On this ocassion, the vacuum pump 10 is provided between the furnace 5 and the exhaustduct 9 and epitaxial growth is carried out keeping the furnace 5 at low pressure less than 100 Torr. Meanwhile, the valve for low pressure 11 is periodically opened and shut and the valve for high pressure 12 is maintained at always opening state. That is, the pressure of the furnace 5 is lowered and discharge of impure particle released from the substrate 1, is accerelated at the state of opening the valve 11. The pressure of the furnace 5 is made high determined by the valve diameter of the valve 12 and the epitaxial growth is accerelated at the state of shutting the valve 11. That is, the epitaxial layer slightly affected by the impurities in the substrate 1, is obtained.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1021078A JPS5927757B2 (en) | 1978-01-31 | 1978-01-31 | Vapor phase epitaxial growth method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1021078A JPS5927757B2 (en) | 1978-01-31 | 1978-01-31 | Vapor phase epitaxial growth method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54102295A true JPS54102295A (en) | 1979-08-11 |
| JPS5927757B2 JPS5927757B2 (en) | 1984-07-07 |
Family
ID=11743900
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1021078A Expired JPS5927757B2 (en) | 1978-01-31 | 1978-01-31 | Vapor phase epitaxial growth method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5927757B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4496424A (en) * | 1982-03-30 | 1985-01-29 | Agency Of Industrial Science & Technology | Method for manufacture of III-V compound semiconducting single crystal |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0238686Y2 (en) * | 1984-10-26 | 1990-10-18 | ||
| CN102618923B (en) * | 2012-04-11 | 2015-09-02 | 浙江金瑞泓科技股份有限公司 | A kind of accurate reduced pressure epitaxy growth method |
-
1978
- 1978-01-31 JP JP1021078A patent/JPS5927757B2/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4496424A (en) * | 1982-03-30 | 1985-01-29 | Agency Of Industrial Science & Technology | Method for manufacture of III-V compound semiconducting single crystal |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5927757B2 (en) | 1984-07-07 |
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