JPS5771126A - Semiamorhous semiconductor - Google Patents

Semiamorhous semiconductor

Info

Publication number
JPS5771126A
JPS5771126A JP55147303A JP14730380A JPS5771126A JP S5771126 A JPS5771126 A JP S5771126A JP 55147303 A JP55147303 A JP 55147303A JP 14730380 A JP14730380 A JP 14730380A JP S5771126 A JPS5771126 A JP S5771126A
Authority
JP
Japan
Prior art keywords
substrate
semiconductor
silicon
mass
furnace
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55147303A
Other languages
Japanese (ja)
Other versions
JPH0253941B2 (en
Inventor
Shunpei Yamazaki
Yujiro Nagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Original Assignee
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HANDOUTAI ENERUGII KENKYUSHO KK, Semiconductor Energy Laboratory Co Ltd filed Critical HANDOUTAI ENERUGII KENKYUSHO KK
Priority to JP55147303A priority Critical patent/JPS5771126A/en
Publication of JPS5771126A publication Critical patent/JPS5771126A/en
Publication of JPH0253941B2 publication Critical patent/JPH0253941B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Abstract

PURPOSE:To obtain a third semiamorphous semiconductor having a dark current conductivity of 10<-7> to 10<-8> cm<-1> and a light conductivity of 10<-3> to 10 cm<-1> by neutralizing an unpaired coupling hand in an amorphous semiconductor by addition of H2 of halogens. CONSTITUTION:A substrate 10 is heated at 100 to 600 deg.C in a furnace 8 from the exterior of a reaction tube and high frequency of 13.56MHz is applied to the substrate 101. Since He and silicon containing diborane are introudced 4 through 6 and the pressure on a reaction system is adjusted outside the furnace to generate a glow discharge over a wide range, a decomposition energy is given to the silicon of a polymerization condiction which is spaced from the substrate and the silicon is reacted into crystallization to become the mass during sputtering. The mass facilitates the coupling between the substrate and the loose atoms and is covered as a mass of semicrystals, or pillar cluster. The cluster is not a multicrystal, a single crystal or an amorpholus semiconductor, but an intermediate, novel semiconductor, and has a desired electrical property and is suitable for a photoelectric transducer.
JP55147303A 1980-10-21 1980-10-21 Semiamorhous semiconductor Granted JPS5771126A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55147303A JPS5771126A (en) 1980-10-21 1980-10-21 Semiamorhous semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55147303A JPS5771126A (en) 1980-10-21 1980-10-21 Semiamorhous semiconductor

Publications (2)

Publication Number Publication Date
JPS5771126A true JPS5771126A (en) 1982-05-01
JPH0253941B2 JPH0253941B2 (en) 1990-11-20

Family

ID=15427141

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55147303A Granted JPS5771126A (en) 1980-10-21 1980-10-21 Semiamorhous semiconductor

Country Status (1)

Country Link
JP (1) JPS5771126A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61180480A (en) * 1984-10-02 1986-08-13 イメツク（インタ−・ユニヴア−スイタリア・マイクロ−エレクトロニカ・セントラム）ヴイ・ズイ−・ダブリユ Bipolar hetero junction transistor and manufacture thereof
US7998801B2 (en) 2008-04-25 2011-08-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor having altered semiconductor layer
US8053294B2 (en) 2008-04-21 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor by controlling generation of crystal nuclei of microcrystalline semiconductor film
US8119468B2 (en) 2008-04-18 2012-02-21 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and method for manufacturing the same
US8138032B2 (en) 2008-04-18 2012-03-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor having microcrystalline semiconductor film
US8283667B2 (en) 2008-09-05 2012-10-09 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US8304775B2 (en) 2009-03-09 2012-11-06 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US8338240B2 (en) 2010-10-01 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing transistor
US8525170B2 (en) 2008-04-18 2013-09-03 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof
US8546810B2 (en) 2009-05-28 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, display device, and electronic appliance
US8569120B2 (en) 2008-11-17 2013-10-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor
US8624254B2 (en) 2010-09-14 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US8637866B2 (en) 2008-06-27 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7738050B2 (en) 2007-07-06 2010-06-15 Semiconductor Energy Laboratory Co., Ltd Liquid crystal display device
JP5216446B2 (en) 2007-07-27 2013-06-19 株式会社半導体エネルギー研究所 Plasma CVD apparatus and display device manufacturing method
JP5058084B2 (en) 2007-07-27 2012-10-24 株式会社半導体エネルギー研究所 Method for manufacturing photoelectric conversion device and microwave plasma CVD apparatus
JP5572307B2 (en) 2007-12-28 2014-08-13 株式会社半導体エネルギー研究所 Method for manufacturing photoelectric conversion device
US7888167B2 (en) 2008-04-25 2011-02-15 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for manufacturing the same
US8343858B2 (en) 2010-03-02 2013-01-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing microcrystalline semiconductor film and method for manufacturing semiconductor device

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
APPL.PHYS.LETT=1980 *
J.NON-CRYST.SOLIED=1979 *
JAPAN.J.APPL.PHYS=1980 *

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61180480A (en) * 1984-10-02 1986-08-13 イメツク（インタ−・ユニヴア−スイタリア・マイクロ−エレクトロニカ・セントラム）ヴイ・ズイ−・ダブリユ Bipolar hetero junction transistor and manufacture thereof
US8119468B2 (en) 2008-04-18 2012-02-21 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and method for manufacturing the same
US8138032B2 (en) 2008-04-18 2012-03-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor having microcrystalline semiconductor film
US8525170B2 (en) 2008-04-18 2013-09-03 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof
US8053294B2 (en) 2008-04-21 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor by controlling generation of crystal nuclei of microcrystalline semiconductor film
US7998801B2 (en) 2008-04-25 2011-08-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor having altered semiconductor layer
US8637866B2 (en) 2008-06-27 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US8283667B2 (en) 2008-09-05 2012-10-09 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US8569120B2 (en) 2008-11-17 2013-10-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor
US8304775B2 (en) 2009-03-09 2012-11-06 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US8604481B2 (en) 2009-03-09 2013-12-10 Semiconductor Energy Co., Ltd. Thin film transistor
US8546810B2 (en) 2009-05-28 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, display device, and electronic appliance
US8624254B2 (en) 2010-09-14 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US8338240B2 (en) 2010-10-01 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing transistor

Also Published As

Publication number Publication date
JPH0253941B2 (en) 1990-11-20

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