JPS5628637A - Film making method - Google Patents
Film making methodInfo
- Publication number
- JPS5628637A JPS5628637A JP10445279A JP10445279A JPS5628637A JP S5628637 A JPS5628637 A JP S5628637A JP 10445279 A JP10445279 A JP 10445279A JP 10445279 A JP10445279 A JP 10445279A JP S5628637 A JPS5628637 A JP S5628637A
- Authority
- JP
- Japan
- Prior art keywords
- substrates
- gas
- semiconductor
- plasma
- high frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title abstract 3
- 239000007789 gas Substances 0.000 abstract 5
- 239000004065 semiconductor Substances 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 5
- 239000012159 carrier gas Substances 0.000 abstract 2
- 230000008021 deposition Effects 0.000 abstract 2
- 229940126062 Compound A Drugs 0.000 abstract 1
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 abstract 1
- 229910004014 SiF4 Inorganic materials 0.000 abstract 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 abstract 1
- 239000012808 vapor phase Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02425—Conductive materials, e.g. metallic silicides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
- H01L31/204—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System including AIVBIV alloys, e.g. SiGe, SiC
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/206—Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S118/00—Coating apparatus
- Y10S118/90—Semiconductor vapor doping
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/907—Continuous processing
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/907—Continuous processing
- Y10S438/908—Utilizing cluster apparatus
Abstract
PURPOSE: To form good quality and uniform amorphous semiconductor films on substrates in a short time, in a vacuum vapor phase method, by providing a gas plasma converting region and a semiconductor deposition region, and using at least He and Ne gases as carrier gas.
CONSTITUTION: Mixed gases F of semiconductor compound A (SiH4, SiF4, etc.) are converted to plasma by using the reaction pipe 1 consisting of a gas lead-in part 2, a plasma converting region 3 provided with a high frequency source 6, a semiconductor deposition region 4 provided with a high frequency source 9 for orientation and a heating source 10 and erected with substrates 7, and a gas lead-out part 5 and using at least He, Ne as a carrier gas E, whereby homogeneous amorphous silicon semiconductor films are formed in a short time on the substrates 7 of a low pressure normal state and ≤700°C temperature. It is also possible to contain respective impurity compounds B, C of n type and p type and successively laminate and form these layers on the substrates. This method makes possible volume production with multiple substrates.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP54104452A JPS6029295B2 (en) | 1979-08-16 | 1979-08-16 | Non-single crystal film formation method |
US06/377,314 US4492716A (en) | 1979-08-16 | 1982-05-12 | Method of making non-crystalline semiconductor layer |
US06/429,255 US4543267A (en) | 1979-08-16 | 1982-09-30 | Method of making a non-single-crystalline semi-conductor layer on a substrate |
US06/429,257 US4505950A (en) | 1979-08-16 | 1982-09-30 | Method of manufacturing a multiple-layer, non-single-crystalline semiconductor on a substrate |
US06/428,737 US4461783A (en) | 1979-08-16 | 1982-09-30 | Non-single-crystalline semiconductor layer on a substrate and method of making same |
US06/619,834 US4615298A (en) | 1979-08-16 | 1984-06-12 | Method of making non-crystalline semiconductor layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP54104452A JPS6029295B2 (en) | 1979-08-16 | 1979-08-16 | Non-single crystal film formation method |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57192055A Division JPS5895550A (en) | 1982-11-01 | 1982-11-01 | Device for forming non-single crystal semiconductor layer |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5628637A true JPS5628637A (en) | 1981-03-20 |
JPS6029295B2 JPS6029295B2 (en) | 1985-07-10 |
Family
ID=14381007
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP54104452A Expired JPS6029295B2 (en) | 1979-08-16 | 1979-08-16 | Non-single crystal film formation method |
Country Status (2)
Country | Link |
---|---|
US (5) | US4492716A (en) |
JP (1) | JPS6029295B2 (en) |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56166935A (en) * | 1980-05-23 | 1981-12-22 | Mitsubishi Electric Corp | Apparatus for vapor growth under reduced pressure |
JPS5838783U (en) * | 1981-09-09 | 1983-03-14 | 株式会社富士電機総合研究所 | Mass production thin film manufacturing equipment |
JPS5895550A (en) * | 1982-11-01 | 1983-06-07 | Shunpei Yamazaki | Device for forming non-single crystal semiconductor layer |
JPS58174570A (en) * | 1982-03-29 | 1983-10-13 | エナージー・コンバーション・デバイセス・インコーポレーテッド | Glow discharge deposition device containing non-horizontally placed cathode |
JPS5916329A (en) * | 1982-07-19 | 1984-01-27 | Semiconductor Energy Lab Co Ltd | Plasma vapor reaction device |
JPS5958820A (en) * | 1982-09-28 | 1984-04-04 | Matsushita Electronics Corp | Equipment for vapor phase epitaxial growth |
JPS59195531A (en) * | 1983-04-19 | 1984-11-06 | Agency Of Ind Science & Technol | Apparatus for continuously growing sno2 film |
JPS6010620A (en) * | 1983-06-29 | 1985-01-19 | Fuji Electric Corp Res & Dev Ltd | Plasma cvd method |
JPS6027143A (en) * | 1983-07-25 | 1985-02-12 | Mitsubishi Electric Corp | Device for continuous heat treatment |
JPS60111418A (en) * | 1983-10-26 | 1985-06-17 | ア−ルシ−エ− コ−ポレ−ション | Coating method and device |
JPS60149119A (en) * | 1984-01-13 | 1985-08-06 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS6139586A (en) * | 1984-07-31 | 1986-02-25 | Canon Inc | Manufacture of amorphous semiconductor |
JPS6242237U (en) * | 1985-08-31 | 1987-03-13 | ||
JPS62122123A (en) * | 1985-11-21 | 1987-06-03 | Toshiba Corp | Vertical type thermal treatment equipment |
JP2007116941A (en) * | 2005-10-26 | 2007-05-17 | Kubota Corp | Swing sorting device of thresher |
Families Citing this family (125)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5187115A (en) * | 1977-12-05 | 1993-02-16 | Plasma Physics Corp. | Method of forming semiconducting materials and barriers using a dual enclosure apparatus |
US4582720A (en) * | 1982-09-20 | 1986-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Method and apparatus for forming non-single-crystal layer |
AU548915B2 (en) * | 1983-02-25 | 1986-01-09 | Toyota Jidosha Kabushiki Kaisha | Plasma treatment |
JPS59193265A (en) * | 1983-03-14 | 1984-11-01 | Stanley Electric Co Ltd | Plasma cvd apparatus |
US5258075A (en) * | 1983-06-30 | 1993-11-02 | Canon Kabushiki Kaisha | Process for producing photoconductive member and apparatus for producing the same |
FR2550007A1 (en) * | 1983-07-29 | 1985-02-01 | Sanyo Electric Co | Method for producing a semiconducting film and photovoltaic device obtained by the method |
DE3429899A1 (en) * | 1983-08-16 | 1985-03-07 | Canon K.K., Tokio/Tokyo | METHOD FOR FORMING A DEPOSITION FILM |
US4690097A (en) * | 1984-02-04 | 1987-09-01 | Toyota Jidosha Kabushiki Kaisha | Apparatus and method for plasma treatment of resin material |
US6784033B1 (en) | 1984-02-15 | 2004-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for the manufacture of an insulated gate field effect semiconductor device |
US5780313A (en) * | 1985-02-14 | 1998-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating semiconductor device |
JPS60170234A (en) * | 1984-02-15 | 1985-09-03 | Semiconductor Energy Lab Co Ltd | Vapor-phase reaction apparatus and manufacture of vapor-phase reaction film |
US4717602A (en) * | 1984-03-12 | 1988-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing silicon nitride layers |
JPS6174293A (en) * | 1984-09-17 | 1986-04-16 | シャープ株式会社 | Manufacture of thin film el element |
US4759947A (en) * | 1984-10-08 | 1988-07-26 | Canon Kabushiki Kaisha | Method for forming deposition film using Si compound and active species from carbon and halogen compound |
US6786997B1 (en) | 1984-11-26 | 2004-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Plasma processing apparatus |
JPH0752718B2 (en) * | 1984-11-26 | 1995-06-05 | 株式会社半導体エネルギー研究所 | Thin film formation method |
US4663009A (en) * | 1985-02-08 | 1987-05-05 | Hewlett-Packard Company | System and method for depositing plural thin film layers on a substrate |
US4717585A (en) * | 1985-02-09 | 1988-01-05 | Canon Kabushiki Kaisha | Process for forming deposited film |
US4716048A (en) * | 1985-02-12 | 1987-12-29 | Canon Kabushiki Kaisha | Process for forming deposited film |
JPS61189626A (en) * | 1985-02-18 | 1986-08-23 | Canon Inc | Formation of deposited film |
US4726963A (en) * | 1985-02-19 | 1988-02-23 | Canon Kabushiki Kaisha | Process for forming deposited film |
JPS61223756A (en) * | 1985-03-28 | 1986-10-04 | Canon Inc | Copying machine |
US4818563A (en) * | 1985-02-21 | 1989-04-04 | Canon Kabushiki Kaisha | Process for forming deposited film |
US5244698A (en) * | 1985-02-21 | 1993-09-14 | Canon Kabushiki Kaisha | Process for forming deposited film |
US4853251A (en) * | 1985-02-22 | 1989-08-01 | Canon Kabushiki Kaisha | Process for forming deposited film including carbon as a constituent element |
US4801468A (en) * | 1985-02-25 | 1989-01-31 | Canon Kabushiki Kaisha | Process for forming deposited film |
JP2537175B2 (en) * | 1985-03-27 | 1996-09-25 | キヤノン株式会社 | Functional deposition film manufacturing equipment |
US5769950A (en) * | 1985-07-23 | 1998-06-23 | Canon Kabushiki Kaisha | Device for forming deposited film |
US4719123A (en) * | 1985-08-05 | 1988-01-12 | Sanyo Electric Co., Ltd. | Method for fabricating periodically multilayered film |
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US6673722B1 (en) | 1985-10-14 | 2004-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Microwave enhanced CVD system under magnetic field |
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JPS6291494A (en) * | 1985-10-16 | 1987-04-25 | Res Dev Corp Of Japan | Method and device for growing compound semiconductor single crystal |
US4949671A (en) * | 1985-10-24 | 1990-08-21 | Texas Instruments Incorporated | Processing apparatus and method |
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JPH0647727B2 (en) * | 1985-12-24 | 1994-06-22 | キヤノン株式会社 | Deposited film formation method |
JPH084071B2 (en) * | 1985-12-28 | 1996-01-17 | キヤノン株式会社 | Deposited film formation method |
US5294285A (en) * | 1986-02-07 | 1994-03-15 | Canon Kabushiki Kaisha | Process for the production of functional crystalline film |
US5326716A (en) * | 1986-02-11 | 1994-07-05 | Max Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V. | Liquid phase epitaxial process for producing three-dimensional semiconductor structures by liquid phase expitaxy |
US4931308A (en) * | 1986-04-04 | 1990-06-05 | Canon Kabushiki Kaisha | Process for the preparation of functional tin oxide thin films |
US4747367A (en) * | 1986-06-12 | 1988-05-31 | Crystal Specialties, Inc. | Method and apparatus for producing a constant flow, constant pressure chemical vapor deposition |
US5327624A (en) * | 1986-07-16 | 1994-07-12 | Mitsubishi Denki Kabushiki Kaisha | Method for forming a thin film on a semiconductor device using an apparatus having a load lock |
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US4882299A (en) * | 1987-07-16 | 1989-11-21 | Texas Instruments Incorporated | Deposition of polysilicon using a remote plasma and in situ generation of UV light. |
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JPS56166935A (en) * | 1980-05-23 | 1981-12-22 | Mitsubishi Electric Corp | Apparatus for vapor growth under reduced pressure |
JPS6128372B2 (en) * | 1980-05-23 | 1986-06-30 | Mitsubishi Electric Corp | |
JPS5838783U (en) * | 1981-09-09 | 1983-03-14 | 株式会社富士電機総合研究所 | Mass production thin film manufacturing equipment |
JPS6123011Y2 (en) * | 1981-09-09 | 1986-07-10 | ||
JPS58174570A (en) * | 1982-03-29 | 1983-10-13 | エナージー・コンバーション・デバイセス・インコーポレーテッド | Glow discharge deposition device containing non-horizontally placed cathode |
JPH0468390B2 (en) * | 1982-03-29 | 1992-11-02 | Enaajii Konbaajon Debaisesu Inc | |
JPS5916329A (en) * | 1982-07-19 | 1984-01-27 | Semiconductor Energy Lab Co Ltd | Plasma vapor reaction device |
JPH0522375B2 (en) * | 1982-07-19 | 1993-03-29 | Handotai Energy Kenkyusho | |
JPS5958820A (en) * | 1982-09-28 | 1984-04-04 | Matsushita Electronics Corp | Equipment for vapor phase epitaxial growth |
JPS5895550A (en) * | 1982-11-01 | 1983-06-07 | Shunpei Yamazaki | Device for forming non-single crystal semiconductor layer |
JPS59195531A (en) * | 1983-04-19 | 1984-11-06 | Agency Of Ind Science & Technol | Apparatus for continuously growing sno2 film |
JPS6010620A (en) * | 1983-06-29 | 1985-01-19 | Fuji Electric Corp Res & Dev Ltd | Plasma cvd method |
JPS6027143A (en) * | 1983-07-25 | 1985-02-12 | Mitsubishi Electric Corp | Device for continuous heat treatment |
JPS60111418A (en) * | 1983-10-26 | 1985-06-17 | ア−ルシ−エ− コ−ポレ−ション | Coating method and device |
JPS60149119A (en) * | 1984-01-13 | 1985-08-06 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
JPH0544180B2 (en) * | 1984-01-13 | 1993-07-05 | Matsushita Electric Ind Co Ltd | |
JPS6139586A (en) * | 1984-07-31 | 1986-02-25 | Canon Inc | Manufacture of amorphous semiconductor |
JPS6242237U (en) * | 1985-08-31 | 1987-03-13 | ||
JPS62122123A (en) * | 1985-11-21 | 1987-06-03 | Toshiba Corp | Vertical type thermal treatment equipment |
JPH0315336B2 (en) * | 1985-11-21 | 1991-02-28 | Tokyo Shibaura Electric Co | |
JP2007116941A (en) * | 2005-10-26 | 2007-05-17 | Kubota Corp | Swing sorting device of thresher |
Also Published As
Publication number | Publication date |
---|---|
US4543267A (en) | 1985-09-24 |
US4492716A (en) | 1985-01-08 |
US4461783A (en) | 1984-07-24 |
US4615298A (en) | 1986-10-07 |
US4505950A (en) | 1985-03-19 |
JPS6029295B2 (en) | 1985-07-10 |
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