JPS5626800A - Vapor phase epitaxial growing method - Google Patents
Vapor phase epitaxial growing methodInfo
- Publication number
- JPS5626800A JPS5626800A JP10074079A JP10074079A JPS5626800A JP S5626800 A JPS5626800 A JP S5626800A JP 10074079 A JP10074079 A JP 10074079A JP 10074079 A JP10074079 A JP 10074079A JP S5626800 A JPS5626800 A JP S5626800A
- Authority
- JP
- Japan
- Prior art keywords
- temp
- substrate
- vapor phase
- phase epitaxial
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10074079A JPS5626800A (en) | 1979-08-09 | 1979-08-09 | Vapor phase epitaxial growing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10074079A JPS5626800A (en) | 1979-08-09 | 1979-08-09 | Vapor phase epitaxial growing method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5626800A true JPS5626800A (en) | 1981-03-14 |
Family
ID=14281952
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10074079A Pending JPS5626800A (en) | 1979-08-09 | 1979-08-09 | Vapor phase epitaxial growing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5626800A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005343705A (ja) * | 2004-05-31 | 2005-12-15 | Sumitomo Electric Ind Ltd | AlxGayIn1−x−yN結晶の製造方法 |
JPWO2007023722A1 (ja) * | 2005-08-25 | 2009-02-26 | 住友電気工業株式会社 | GaxIn1−xN(0≦x≦1)結晶の製造方法、GaxIn1−xN(0≦x≦1)結晶基板、GaN結晶の製造方法、GaN結晶基板および製品 |
-
1979
- 1979-08-09 JP JP10074079A patent/JPS5626800A/ja active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005343705A (ja) * | 2004-05-31 | 2005-12-15 | Sumitomo Electric Ind Ltd | AlxGayIn1−x−yN結晶の製造方法 |
JP4513421B2 (ja) * | 2004-05-31 | 2010-07-28 | 住友電気工業株式会社 | AlxGayIn1−x−yN結晶の製造方法 |
JPWO2007023722A1 (ja) * | 2005-08-25 | 2009-02-26 | 住友電気工業株式会社 | GaxIn1−xN(0≦x≦1)結晶の製造方法、GaxIn1−xN(0≦x≦1)結晶基板、GaN結晶の製造方法、GaN結晶基板および製品 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH0350834B2 (ja) | ||
SE9502288D0 (sv) | A device and a method for epitaxially growing objects by CVD | |
JPS5626800A (en) | Vapor phase epitaxial growing method | |
JPS54157780A (en) | Production of silicon single crystal | |
JPS54106081A (en) | Growth method in vapor phase | |
JPS56169320A (en) | Silicon carbide semiconductor | |
JPS56124228A (en) | Method for low-tension epitaxial growth | |
JPS5632400A (en) | Vapor phase growing method for gallium phosphide layer | |
JPS6446917A (en) | Chemical vapor growth device | |
JPS5624927A (en) | Method of vapor phase growth of 3-5 group compound semiconductor in periodic table | |
JPS5586113A (en) | Vapor phase growth process | |
JPS5681924A (en) | Susceptor for vertical type high frequency heating vapor phase growing system | |
JPS54102295A (en) | Epitaxial crowth method | |
JPS5684399A (en) | Vapor phase growing method for 3-5 group compound semiconductor | |
JPS55167199A (en) | Vapor phase epitaxial growing apparatus | |
JPS6131393A (ja) | 気相成長装置 | |
JPS5676240A (en) | Quartz reaction tube for treatment of semiconductor | |
JPS5461463A (en) | Vapor phase growth method for semiconductor | |
JPS6459808A (en) | Growth of semiconductor | |
JPS5493357A (en) | Growing method of polycrystal silicon | |
JPS57149721A (en) | Method of vapor epitaxial growth | |
JPS5717126A (en) | Manufacture of silicon carbide process tube for semiconductor | |
JPS54110987A (en) | Gaseous growing of semiconductor | |
JPS56100115A (en) | Manufacture of silicon nitride whisker | |
JPS57200292A (en) | Vapor-phase epitaxial growth apparatus |