JPS5681924A - Susceptor for vertical type high frequency heating vapor phase growing system - Google Patents

Susceptor for vertical type high frequency heating vapor phase growing system

Info

Publication number
JPS5681924A
JPS5681924A JP15922479A JP15922479A JPS5681924A JP S5681924 A JPS5681924 A JP S5681924A JP 15922479 A JP15922479 A JP 15922479A JP 15922479 A JP15922479 A JP 15922479A JP S5681924 A JPS5681924 A JP S5681924A
Authority
JP
Japan
Prior art keywords
susceptor
vapor phase
high frequency
type high
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15922479A
Other languages
Japanese (ja)
Inventor
Toshihiko Hattori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15922479A priority Critical patent/JPS5681924A/en
Publication of JPS5681924A publication Critical patent/JPS5681924A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

PURPOSE:To obtain a unified vapor phase grown film by placing a wafer on the outer peripheral surface of a pyramid type susceptor. CONSTITUTION:A susceptor 11 is made into a haxagonal pyramid type and a wafer is placed on a side face 12 and a stopper 13 at the lower end prevents the wafer from falling. With this constitution, when it is placed in a reaction furnace 3, the higher it is, the more it separates from a heating coil 4, as a result, temperature distribution becomes unified. And further, owing to a pyramid type of the susceptor, the gas flow in the reaction furnace 3 becomes smooth and the thickness of grown film and an impurity concentration distribution are made unified.
JP15922479A 1979-12-10 1979-12-10 Susceptor for vertical type high frequency heating vapor phase growing system Pending JPS5681924A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15922479A JPS5681924A (en) 1979-12-10 1979-12-10 Susceptor for vertical type high frequency heating vapor phase growing system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15922479A JPS5681924A (en) 1979-12-10 1979-12-10 Susceptor for vertical type high frequency heating vapor phase growing system

Publications (1)

Publication Number Publication Date
JPS5681924A true JPS5681924A (en) 1981-07-04

Family

ID=15689043

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15922479A Pending JPS5681924A (en) 1979-12-10 1979-12-10 Susceptor for vertical type high frequency heating vapor phase growing system

Country Status (1)

Country Link
JP (1) JPS5681924A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0147967A2 (en) * 1983-12-09 1985-07-10 Applied Materials, Inc. Induction heated reactor system for chemical vapor deposition
JPH0258823A (en) * 1988-08-24 1990-02-28 Mitsubishi Metal Corp Construction of susceptor for cvd apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0147967A2 (en) * 1983-12-09 1985-07-10 Applied Materials, Inc. Induction heated reactor system for chemical vapor deposition
JPH0258823A (en) * 1988-08-24 1990-02-28 Mitsubishi Metal Corp Construction of susceptor for cvd apparatus

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