JPS6446917A - Chemical vapor growth device - Google Patents
Chemical vapor growth deviceInfo
- Publication number
- JPS6446917A JPS6446917A JP20340087A JP20340087A JPS6446917A JP S6446917 A JPS6446917 A JP S6446917A JP 20340087 A JP20340087 A JP 20340087A JP 20340087 A JP20340087 A JP 20340087A JP S6446917 A JPS6446917 A JP S6446917A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- raw material
- material gas
- flow
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
PURPOSE:To grow and form a thin-film layer with a steep crystal interface by specifying the flow of a raw material gas in the same direction as heat convection and reducing the generation of a retention layer. CONSTITUTION:A gas introducing pipe 22 for introducing a raw material gas is connected to a gas introducing port 21 in the lowermost section of a reaction pipe 13, and the raw material gas is fed in the upward direction from a lower section. Consequently, the flow of the gas is directed in the same direction as the rise of radiant heat emitted from a susceptor 14, a crystal substrate 16, etc. That is, the directions of the gas flow and heat convection can be made the same, and a retention layer 30 on the surface of the substrate 16 can be reduced remarkably, thus extremely shortening the retention time on the substrate 16 of the gas before changeover after the raw material gas is changed over. Accordingly, a thin-film layer with a steep crystal interface can be grown and shaped.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20340087A JPS6446917A (en) | 1987-08-18 | 1987-08-18 | Chemical vapor growth device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20340087A JPS6446917A (en) | 1987-08-18 | 1987-08-18 | Chemical vapor growth device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6446917A true JPS6446917A (en) | 1989-02-21 |
Family
ID=16473424
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20340087A Pending JPS6446917A (en) | 1987-08-18 | 1987-08-18 | Chemical vapor growth device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6446917A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003104524A1 (en) * | 2002-06-10 | 2003-12-18 | 東京エレクトロン株式会社 | Processing device and processing method |
JP2007123628A (en) * | 2005-10-28 | 2007-05-17 | Mitsubishi Electric Corp | Semiconductor manufacturing method and satellite |
-
1987
- 1987-08-18 JP JP20340087A patent/JPS6446917A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003104524A1 (en) * | 2002-06-10 | 2003-12-18 | 東京エレクトロン株式会社 | Processing device and processing method |
JP2007123628A (en) * | 2005-10-28 | 2007-05-17 | Mitsubishi Electric Corp | Semiconductor manufacturing method and satellite |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR970060367A (en) | Epitaxial Growth Method | |
JPS6446917A (en) | Chemical vapor growth device | |
JPS5694751A (en) | Vapor growth method | |
JPS6412522A (en) | Semiconductor crystal epitaxy method | |
Ayers et al. | The epitaxy of germanium on gallium arsenide | |
JPS6447018A (en) | Vapor growth device | |
JPS54106100A (en) | Vapor phase chemically depositing method for silicon carbide | |
JPS55110030A (en) | Method for vapor growth | |
JPS54106081A (en) | Growth method in vapor phase | |
JPS5542231A (en) | Reduced pressure vapor phase growing device | |
JPS5469062A (en) | Vapor growth method for magnespinel | |
JPS5681924A (en) | Susceptor for vertical type high frequency heating vapor phase growing system | |
JPS54102295A (en) | Epitaxial crowth method | |
JPS6459808A (en) | Growth of semiconductor | |
JPS5626800A (en) | Vapor phase epitaxial growing method | |
JPS55110031A (en) | Method for vapor growth | |
JPS6421075A (en) | Vapor growth method and device under reduced pressure | |
JPS5542230A (en) | Vapor phase growing device | |
JPS55110034A (en) | Method for growing epitaxial layer | |
JPS647516A (en) | Manufacture of compound semiconductor and semiconductor device using thereof | |
JPS5275176A (en) | Method for vapor phase epitaxial growth | |
JPS6441212A (en) | Semiconductor crystal growth method | |
JPS561525A (en) | Epitaxial growing method of silicon crystal | |
JPS57149721A (en) | Method of vapor epitaxial growth | |
JPS62119919A (en) | Device for crystal growth of compound semiconductor |