JPS5684399A - Vapor phase growing method for 3-5 group compound semiconductor - Google Patents

Vapor phase growing method for 3-5 group compound semiconductor

Info

Publication number
JPS5684399A
JPS5684399A JP16019679A JP16019679A JPS5684399A JP S5684399 A JPS5684399 A JP S5684399A JP 16019679 A JP16019679 A JP 16019679A JP 16019679 A JP16019679 A JP 16019679A JP S5684399 A JPS5684399 A JP S5684399A
Authority
JP
Japan
Prior art keywords
tube
slider
reaction
compound semiconductor
reservoir
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16019679A
Other languages
Japanese (ja)
Inventor
Michihiro Ito
Kazuaki Segawa
Mutsuyuki Otsubo
Takashi Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP16019679A priority Critical patent/JPS5684399A/en
Publication of JPS5684399A publication Critical patent/JPS5684399A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To form a III-V group compound semiconductor having uniform characteristics with high reproducibility by repeating an epitaxial layer growing reaction in a reaction tube while taking out a predetermined amount of a III group element in the tube every reaction.
CONSTITUTION: Boat 2' provided with slider 10 capable of freely taking out a III group element such as Ga in melt reservoir 9 is set in reaction tube 1. Reservoir 9 and the recess of slider 10 are first filled with Ga 3a, 3b (drawing A), and AsH3-contg. H2 is introduced into tube 1 from inlet 6 and heated to a predetermined temp. with heating furnace 5. Next, slider 10 is shifted to the left to expose part 3b of the Ga in reservoir 9 to tube 1 (drawings B, C), and HCl-contg. H2 is introduced from inlet 7 to epitaxially grow Ga-As on substrate 4. Slider 10 is then returned to the right, and the recess is filled with Ga. The above-mentioned operation is repeated until a laminated epitaxial layer of a desired thickness is formed.
COPYRIGHT: (C)1981,JPO&Japio
JP16019679A 1979-12-06 1979-12-06 Vapor phase growing method for 3-5 group compound semiconductor Pending JPS5684399A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16019679A JPS5684399A (en) 1979-12-06 1979-12-06 Vapor phase growing method for 3-5 group compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16019679A JPS5684399A (en) 1979-12-06 1979-12-06 Vapor phase growing method for 3-5 group compound semiconductor

Publications (1)

Publication Number Publication Date
JPS5684399A true JPS5684399A (en) 1981-07-09

Family

ID=15709880

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16019679A Pending JPS5684399A (en) 1979-12-06 1979-12-06 Vapor phase growing method for 3-5 group compound semiconductor

Country Status (1)

Country Link
JP (1) JPS5684399A (en)

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