JPS5684399A - Vapor phase growing method for 3-5 group compound semiconductor - Google Patents
Vapor phase growing method for 3-5 group compound semiconductorInfo
- Publication number
- JPS5684399A JPS5684399A JP16019679A JP16019679A JPS5684399A JP S5684399 A JPS5684399 A JP S5684399A JP 16019679 A JP16019679 A JP 16019679A JP 16019679 A JP16019679 A JP 16019679A JP S5684399 A JPS5684399 A JP S5684399A
- Authority
- JP
- Japan
- Prior art keywords
- tube
- slider
- reaction
- compound semiconductor
- reservoir
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To form a III-V group compound semiconductor having uniform characteristics with high reproducibility by repeating an epitaxial layer growing reaction in a reaction tube while taking out a predetermined amount of a III group element in the tube every reaction.
CONSTITUTION: Boat 2' provided with slider 10 capable of freely taking out a III group element such as Ga in melt reservoir 9 is set in reaction tube 1. Reservoir 9 and the recess of slider 10 are first filled with Ga 3a, 3b (drawing A), and AsH3-contg. H2 is introduced into tube 1 from inlet 6 and heated to a predetermined temp. with heating furnace 5. Next, slider 10 is shifted to the left to expose part 3b of the Ga in reservoir 9 to tube 1 (drawings B, C), and HCl-contg. H2 is introduced from inlet 7 to epitaxially grow Ga-As on substrate 4. Slider 10 is then returned to the right, and the recess is filled with Ga. The above-mentioned operation is repeated until a laminated epitaxial layer of a desired thickness is formed.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16019679A JPS5684399A (en) | 1979-12-06 | 1979-12-06 | Vapor phase growing method for 3-5 group compound semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16019679A JPS5684399A (en) | 1979-12-06 | 1979-12-06 | Vapor phase growing method for 3-5 group compound semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5684399A true JPS5684399A (en) | 1981-07-09 |
Family
ID=15709880
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16019679A Pending JPS5684399A (en) | 1979-12-06 | 1979-12-06 | Vapor phase growing method for 3-5 group compound semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5684399A (en) |
-
1979
- 1979-12-06 JP JP16019679A patent/JPS5684399A/en active Pending
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