JPS55167199A - Vapor phase epitaxial growing apparatus - Google Patents
Vapor phase epitaxial growing apparatusInfo
- Publication number
- JPS55167199A JPS55167199A JP7584779A JP7584779A JPS55167199A JP S55167199 A JPS55167199 A JP S55167199A JP 7584779 A JP7584779 A JP 7584779A JP 7584779 A JP7584779 A JP 7584779A JP S55167199 A JPS55167199 A JP S55167199A
- Authority
- JP
- Japan
- Prior art keywords
- hydrides
- vapor phase
- units
- group elements
- contg
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To simply grow an epitaxial layer of a high quality compound semiconductor crystal on a substrate by connecting one element-contg. gaseous material sources to units for gasifying other element-contg. liqs. with a carrier gas.
CONSTITUTION: Hydrides (c), (d) of V group elements such as AsH3, PH3 and SbH3 diluted with an inert gas in gaseous material sources 4, 5 enter gasifying units 6, 7 through mass flow controller 8-6, 8-7. In units 6, 7 hydrides (e), (f) of III group elements such as Ga(CH3)3, In(C2H5)3 and Al(CH3)3 are gasified, and they are fed to vapor phase growing furnace 1 with a carrier gas such as H2 or Ar from inert gas container 2 together with hydrides (c), (d) to grow a compound semiconductor crystal such as InxGa1-xAsyP1-y on substrate 10 in a vapor phase. By this mechanism the flow rates of org. compounds (e), (f) of III group elements change as the flow rates of hydrides (c), (d) change, so a high quality epitaxial crystal is obtd.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7584779A JPS5927758B2 (en) | 1979-06-13 | 1979-06-13 | Vapor phase epitaxial growth equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7584779A JPS5927758B2 (en) | 1979-06-13 | 1979-06-13 | Vapor phase epitaxial growth equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55167199A true JPS55167199A (en) | 1980-12-26 |
JPS5927758B2 JPS5927758B2 (en) | 1984-07-07 |
Family
ID=13588005
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7584779A Expired JPS5927758B2 (en) | 1979-06-13 | 1979-06-13 | Vapor phase epitaxial growth equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5927758B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5878142U (en) * | 1981-11-20 | 1983-05-26 | 三洋電機株式会社 | Reaction gas supply device |
JPS5980325A (en) * | 1982-10-29 | 1984-05-09 | Fujitsu Ltd | Distribution of reaction gas |
JPH0817736A (en) * | 1994-06-27 | 1996-01-19 | Nec Corp | Selective growth method and selective buried growth method of compound semiconductor |
-
1979
- 1979-06-13 JP JP7584779A patent/JPS5927758B2/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5878142U (en) * | 1981-11-20 | 1983-05-26 | 三洋電機株式会社 | Reaction gas supply device |
JPS5980325A (en) * | 1982-10-29 | 1984-05-09 | Fujitsu Ltd | Distribution of reaction gas |
JPH0817736A (en) * | 1994-06-27 | 1996-01-19 | Nec Corp | Selective growth method and selective buried growth method of compound semiconductor |
Also Published As
Publication number | Publication date |
---|---|
JPS5927758B2 (en) | 1984-07-07 |
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