JPS55167199A - Vapor phase epitaxial growing apparatus - Google Patents

Vapor phase epitaxial growing apparatus

Info

Publication number
JPS55167199A
JPS55167199A JP7584779A JP7584779A JPS55167199A JP S55167199 A JPS55167199 A JP S55167199A JP 7584779 A JP7584779 A JP 7584779A JP 7584779 A JP7584779 A JP 7584779A JP S55167199 A JPS55167199 A JP S55167199A
Authority
JP
Japan
Prior art keywords
hydrides
vapor phase
units
group elements
contg
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7584779A
Other languages
Japanese (ja)
Other versions
JPS5927758B2 (en
Inventor
Kazuhisa Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7584779A priority Critical patent/JPS5927758B2/en
Publication of JPS55167199A publication Critical patent/JPS55167199A/en
Publication of JPS5927758B2 publication Critical patent/JPS5927758B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To simply grow an epitaxial layer of a high quality compound semiconductor crystal on a substrate by connecting one element-contg. gaseous material sources to units for gasifying other element-contg. liqs. with a carrier gas.
CONSTITUTION: Hydrides (c), (d) of V group elements such as AsH3, PH3 and SbH3 diluted with an inert gas in gaseous material sources 4, 5 enter gasifying units 6, 7 through mass flow controller 8-6, 8-7. In units 6, 7 hydrides (e), (f) of III group elements such as Ga(CH3)3, In(C2H5)3 and Al(CH3)3 are gasified, and they are fed to vapor phase growing furnace 1 with a carrier gas such as H2 or Ar from inert gas container 2 together with hydrides (c), (d) to grow a compound semiconductor crystal such as InxGa1-xAsyP1-y on substrate 10 in a vapor phase. By this mechanism the flow rates of org. compounds (e), (f) of III group elements change as the flow rates of hydrides (c), (d) change, so a high quality epitaxial crystal is obtd.
COPYRIGHT: (C)1980,JPO&Japio
JP7584779A 1979-06-13 1979-06-13 Vapor phase epitaxial growth equipment Expired JPS5927758B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7584779A JPS5927758B2 (en) 1979-06-13 1979-06-13 Vapor phase epitaxial growth equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7584779A JPS5927758B2 (en) 1979-06-13 1979-06-13 Vapor phase epitaxial growth equipment

Publications (2)

Publication Number Publication Date
JPS55167199A true JPS55167199A (en) 1980-12-26
JPS5927758B2 JPS5927758B2 (en) 1984-07-07

Family

ID=13588005

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7584779A Expired JPS5927758B2 (en) 1979-06-13 1979-06-13 Vapor phase epitaxial growth equipment

Country Status (1)

Country Link
JP (1) JPS5927758B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5878142U (en) * 1981-11-20 1983-05-26 三洋電機株式会社 Reaction gas supply device
JPS5980325A (en) * 1982-10-29 1984-05-09 Fujitsu Ltd Distribution of reaction gas
JPH0817736A (en) * 1994-06-27 1996-01-19 Nec Corp Selective growth method and selective buried growth method of compound semiconductor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5878142U (en) * 1981-11-20 1983-05-26 三洋電機株式会社 Reaction gas supply device
JPS5980325A (en) * 1982-10-29 1984-05-09 Fujitsu Ltd Distribution of reaction gas
JPH0817736A (en) * 1994-06-27 1996-01-19 Nec Corp Selective growth method and selective buried growth method of compound semiconductor

Also Published As

Publication number Publication date
JPS5927758B2 (en) 1984-07-07

Similar Documents

Publication Publication Date Title
JPS52140267A (en) Vapor epitaxial crystal growing device
Kamins et al. Kinetics of silicon‐germanium deposition by atmospheric‐pressure chemical vapor deposition
JPS5529154A (en) Semiconductor device
JPS559467A (en) Epitaxial wafer
JPS55167199A (en) Vapor phase epitaxial growing apparatus
Garcia et al. Kinetic study of metalorganic molecular beam epitaxy of GaP, InP, and Ga x In1− x P
Zhou et al. Growth mechanisms in excimer laser photolytic deposition of gallium nitride at 500 C
JPS54102295A (en) Epitaxial crowth method
JPS5553415A (en) Selective epitaxial growing
JPS573797A (en) Vapor phase growing method of compound semiconductor and its vapor phase growing apparatus
KR950011016B1 (en) Semiconductor epitaxy growth method using ultra high vacuum chemical vapor deposition
JPH08245291A (en) Method for growing iii-v compound semiconductor crystal
Koukitu et al. Atomic layer epitaxy of GaAsP and InAsP by halogen system
Flemish et al. Altering the Composition of InGaAsP Grown by the Hydride Technique by Introducing HCl Downstream
JPS56114332A (en) Forming method for semiconductor insulating film
JPS5792526A (en) Vaper growth of compound semiconductor
JPS5267260A (en) Manufacture of iii-v group compounds semiconductor epitaxial laminatio n crystal
JP2924072B2 (en) Organometallic molecular beam epitaxial growth method and apparatus
JPS5645897A (en) Manufacture of silicon carbide crystal
JPS59172718A (en) Iii-v group compound semiconductor growth and equipment for the same
JPS647614A (en) Compound semiconductor thin film
JPS6437832A (en) Method of growing compound semiconductor crystal
JPH05190474A (en) Crystal growth method of compound semiconductor
JPS5646524A (en) Gaseous phase growing of compound semiconductor
ATE80498T1 (en) MATERIAL-SAVING PROCESS FOR THE MANUFACTURE OF MIXED CRYSTALS.