JPS5632400A - Vapor phase growing method for gallium phosphide layer - Google Patents
Vapor phase growing method for gallium phosphide layerInfo
- Publication number
- JPS5632400A JPS5632400A JP10358079A JP10358079A JPS5632400A JP S5632400 A JPS5632400 A JP S5632400A JP 10358079 A JP10358079 A JP 10358079A JP 10358079 A JP10358079 A JP 10358079A JP S5632400 A JPS5632400 A JP S5632400A
- Authority
- JP
- Japan
- Prior art keywords
- zone
- temp
- gallium
- gallium phosphide
- vapor phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To form a high purity gallium phosphide layer in vapor phase by thermally decomposing gallium orthophosphate in a reducing atmosphere in a higher temp. zone and introducing the resulting gases onto a gallium phosphide single crystal water in a lower temp. zone.
CONSTITUTION: Gallium phosphide is obtd. in vapor phase with high mass producibility using inexpensive gallium orthophosphate. For example, a higher temp. zone of 1,000°C and a lower temp. zonc are formed in reaction furnace 1 with heater 2 and heater 3, respectively. Gallium orthophosphate in container 5 is set in the higher temp. zone, and gallium phosphide single crystal wafer 6 on stand 7 in the lower temp. zone. While the internal temp. of furnace 1 is raised, inert gas is fed from guide pipe 8. The inert gas is then changed over to hydrogen gas to cause the reaction of formula I in the higher temp. zone and the reaction of formula II in the lower temp. zone, thereby growing a gallium phosphide layer in vapor phase. Hydrogen arsenide may be fed from guide pipe 9 together with hydrogen gas to grow gallium phosphoarsenide on wafer 3.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10358079A JPS5632400A (en) | 1979-08-16 | 1979-08-16 | Vapor phase growing method for gallium phosphide layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10358079A JPS5632400A (en) | 1979-08-16 | 1979-08-16 | Vapor phase growing method for gallium phosphide layer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5632400A true JPS5632400A (en) | 1981-04-01 |
Family
ID=14357711
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10358079A Pending JPS5632400A (en) | 1979-08-16 | 1979-08-16 | Vapor phase growing method for gallium phosphide layer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5632400A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001080291A1 (en) * | 2000-04-17 | 2001-10-25 | Mezey James J Sr | Methods and apparatus for thermally processing wafers |
-
1979
- 1979-08-16 JP JP10358079A patent/JPS5632400A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001080291A1 (en) * | 2000-04-17 | 2001-10-25 | Mezey James J Sr | Methods and apparatus for thermally processing wafers |
US6774060B2 (en) | 2000-04-17 | 2004-08-10 | Avansys, Llc. | Methods and apparatus for thermally processing wafers |
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