JPS5632400A - Vapor phase growing method for gallium phosphide layer - Google Patents

Vapor phase growing method for gallium phosphide layer

Info

Publication number
JPS5632400A
JPS5632400A JP10358079A JP10358079A JPS5632400A JP S5632400 A JPS5632400 A JP S5632400A JP 10358079 A JP10358079 A JP 10358079A JP 10358079 A JP10358079 A JP 10358079A JP S5632400 A JPS5632400 A JP S5632400A
Authority
JP
Japan
Prior art keywords
zone
temp
gallium
gallium phosphide
vapor phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10358079A
Other languages
Japanese (ja)
Inventor
Kiyoshi Hisatomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10358079A priority Critical patent/JPS5632400A/en
Publication of JPS5632400A publication Critical patent/JPS5632400A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To form a high purity gallium phosphide layer in vapor phase by thermally decomposing gallium orthophosphate in a reducing atmosphere in a higher temp. zone and introducing the resulting gases onto a gallium phosphide single crystal water in a lower temp. zone.
CONSTITUTION: Gallium phosphide is obtd. in vapor phase with high mass producibility using inexpensive gallium orthophosphate. For example, a higher temp. zone of 1,000°C and a lower temp. zonc are formed in reaction furnace 1 with heater 2 and heater 3, respectively. Gallium orthophosphate in container 5 is set in the higher temp. zone, and gallium phosphide single crystal wafer 6 on stand 7 in the lower temp. zone. While the internal temp. of furnace 1 is raised, inert gas is fed from guide pipe 8. The inert gas is then changed over to hydrogen gas to cause the reaction of formula I in the higher temp. zone and the reaction of formula II in the lower temp. zone, thereby growing a gallium phosphide layer in vapor phase. Hydrogen arsenide may be fed from guide pipe 9 together with hydrogen gas to grow gallium phosphoarsenide on wafer 3.
COPYRIGHT: (C)1981,JPO&Japio
JP10358079A 1979-08-16 1979-08-16 Vapor phase growing method for gallium phosphide layer Pending JPS5632400A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10358079A JPS5632400A (en) 1979-08-16 1979-08-16 Vapor phase growing method for gallium phosphide layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10358079A JPS5632400A (en) 1979-08-16 1979-08-16 Vapor phase growing method for gallium phosphide layer

Publications (1)

Publication Number Publication Date
JPS5632400A true JPS5632400A (en) 1981-04-01

Family

ID=14357711

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10358079A Pending JPS5632400A (en) 1979-08-16 1979-08-16 Vapor phase growing method for gallium phosphide layer

Country Status (1)

Country Link
JP (1) JPS5632400A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001080291A1 (en) * 2000-04-17 2001-10-25 Mezey James J Sr Methods and apparatus for thermally processing wafers

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001080291A1 (en) * 2000-04-17 2001-10-25 Mezey James J Sr Methods and apparatus for thermally processing wafers
US6774060B2 (en) 2000-04-17 2004-08-10 Avansys, Llc. Methods and apparatus for thermally processing wafers

Similar Documents

Publication Publication Date Title
JPS5529154A (en) Semiconductor device
GB1306988A (en) Reaction vessels for the preparation of semiconductor devices
JPS5632400A (en) Vapor phase growing method for gallium phosphide layer
JPS54104770A (en) Heat treatment method for 3-5 group compound semiconductor
JPS54133480A (en) Growth method for liquid phase epitaxial
JPS54106081A (en) Growth method in vapor phase
JPS5591819A (en) Vapor phase growth method
JPS5626800A (en) Vapor phase epitaxial growing method
JPS5469062A (en) Vapor growth method for magnespinel
JPS56105746A (en) Transportation method of dopant in vapor phase growth
JPS5234668A (en) Gaseous phase growing process of semiconductor
JPS5474672A (en) Gaas vapor phase growth method
JPS5429560A (en) Gas phase growth method for semiconductor
JPS5599717A (en) Method of growing crystal
JPS54102295A (en) Epitaxial crowth method
JPS54110987A (en) Gaseous growing of semiconductor
JPS5382163A (en) Semiconductor vapor phase growth method
JPS5559716A (en) Liquid phase growing method of 3-5 group compound semiconductor
JPS57205400A (en) Vapor phase growing method for gallium arsenide
JPS53148277A (en) Controlling method of goping gas in vapor phase growth of semiconductor
JPS5456358A (en) Vapor phase growth method of compound semiconductor crystal
JPS52153375A (en) Vapor phase growth method for g#a#
JPS5461463A (en) Vapor phase growth method for semiconductor
JPS5591815A (en) Silicon epitaxial growth
JPS55140799A (en) Gallium nitride crystal growing method